microRNA 在灵长类中的进化及其对靶基因表达变异度的影响

microRNAs（miRNAs）是基因组中广泛编码的一类小RNA 基因，存在于绝大多数多细胞生物中，而且在各种生物学过程中都起着举足轻重的作用。miRNAs 在转录后水平通过与mRNAs 的3’UTRs 序列互补识别靶基因，并引起靶基因的降解或阻遏其翻译。在动物中，一个miRNA 可以调控数百个靶基因的表达。大多数miRNAs 在物种间高度保守，暗示了其功能的重要性。然而，非保守的miRNAs可能对物种特有新功能的产生有贡献。为了回答miRNAs是如何起源，如何进化的问题，我们研究了两个非保守miRNA 家族在灵长类中的进化历史。第一个miRNA 家族位于X 染色体上，在灵长类中的数目比狗或啮齿类中的多。我们比较了这一家族在灵长类主要分支－人、大猿、小猿、旧大陆猴和新大陆猴中的序列情况，发现了这一家族在灵长类中的快速进化。这种快速进化包括频繁的串联重复和碱基替换现象。此外，在人和黑猩猩中还发现了相应进化分支特有的替换，可能会导致分支特有的新miRNAs 的产生。对这一miRNA 家族在不同发育阶段恒河猴睾丸中的表达分析揭示了miRNA 表达变化和雄性性成熟之间的负相关，暗示这一家族在睾丸发育和精子成熟中可能起的调节作用。最后，我们认为，像蛋白编码基因一样，与雄性生殖功能相关的miRNAs 容易受到性选择而发生适应性进化。第二个miRNA 家族是位于19 号染色体上的一个灵长类特有的家族。通过分析和比较这一家族以及其临近区域在9 个不同灵长类物种中的序列，我们发现了 Alu 介导的这一家族的产生和扩张。序列比较表明，物种内和物种间miRNAs 的序列分歧相似；同时，在各个灵长类分支中均存在基因拷贝的获得和丢失，也存在基因的假基因化。由此表明，这一家族在灵长类中经历了典型的“生－死”进化历程，暗示这个家族的miRNA 基因在灵长类的进化中其功能可能发生了多样化，以适应不同灵长类物种在发育过程中的需要。此外，二级结构的保守性和前体miRNAs 区域的低SNP 密度都表明这一家族受到功能性约束。最后，我们进一步分析了这一家族在胎盘和胎儿大脑中的表达，揭示其对灵长类胚胎发育可能的重要性。除了研究miRNAs 在灵长类中的进化，我们还探讨了miRNAs 对基因表达变异度的影响。通过对已发表的193 例人类大脑基因表达谱的分析发现，基因在人群中的表达变异的大小和调控它的miRNA 数目呈正比，这暗示了miRNAs 对基因表达变异度的直接影响。相比于不受miRNA 调控的基因，受到两个以上 miRNA 核心区调控的基因有较高的表达变异度，不受miRNA 类型的影响。同时，我们还证明，人群中靶基因miRNA 识别序列上的变异（SNPs）会进一步导致靶基因表达变异的增加。我们的研究表明miRNAs 是影响人群中基因表达变异度的因素之一。

Recombinant protein of heptad-repeat HR212, a stable fusion inhibitor with potent anti-HIV action in vitro

HR212, a recombinant protein expressed in Escherichia coli, has been previously reported to inhibit HIV-1 membrane fusion at low nanomolar level. Here we report that HR212 is effective in blocking laboratory strain HIV-1IIIB entry and replication with EC50 values of 3.92±0.62 and 6.59±1.74 nM, respectively, and inhibiting infection by clinic isolate HIV-1KM018 with EC50 values of 44.44±10.20 nM, as well as suppressing HIV-1- induced cytopathic effect with an EC50 value of 3.04±1.20 nM. It also inhibited HIV-2ROD and HIV-2CBL-20 entry and replication in the μM range. Notably, HR212 was highly effective against T20-resistant strains with EC50 values ranging from 5.09 to 7.75 nM. Unlike T20, HR212 showed stability sufficient to inhibit syncytia formation in a time-of-addition assay, and was insensitive to proteinase K digestion. These results suggest that HR212 has great potential to be further developed as novel HIV-1 fusion inhibitor for treatment of HIV/ AIDS patients, particularly for those infected by T20-resistant variants.

Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)

Step like morphology of (331)A high-index surfaces during atomic hydrogen assisted molecular beam epitaxy (MBE) growth has been investigated. Atomic Force Microscope (AFM) measurements show that in conventional MBE, the step heights and terrace widths of GaAs layers increase monotonically with increasing substrate temperatures. The terrace widths and step densities increase with increasing the GaAs layer thickness and then saturates. And, in atomic hydrogen assisted MBE, the terrace width reduces and density increases when depositing the same amount of GaAs. It attributes this to the reduced surface migration length of Ga adatoms with atomic hydrogen. Laterally ordered InAs self-aligned nano-wires were grown on GaAs (331)A surfaces and its optical polarization properties were revealed by photoluminescence measurements.

Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer

The size and shape Evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0-ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9-ML deposition on GaAs(1 0 0) substrate. Based on comparisons with the evolution of InAs islands on single layer samples at late growth stage, the bimodal size distribution of InAs islands at 2.5-ML InAs coverage and the formation of larger InAs quantum dots at 2.9-ML deposition have been observed on the second InAs layer. The further cross-sectional transmission electron microscopy measurement indicates the larger InAs QDs: at 2.9-ML deposition on the second layer are free of dislocation. In addition, the interpretations for the size and shape evolution of InAs/GaAs QDs on the second layer will be presented. (C) 2001 Elsevier Science B.V. All lights reserved.

Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing

Strain relaxation in initially flat SiGe film on Si(1 0 0) during rapid thermal annealing is studied. The surface roughens after high-temperature annealing, which has been attributed to the intrinsic strain in the epilayers. It is interesting to find that high-temperature annealing also results in roughened interface, indicating the occurrence of preferential interdiffusion. It is suggested that the roughening at the surface makes the intrinsic strain in the epilayer as well as the substrate unequally distributed, causing preferential interdiffusion at the SiGe/Si interface during high-temperature annealing. (C) 1999 Elsevier Science B.V. All rights reserved.