Synthesis and stereochemical assignments of diastereomeric Ni(II) complexes of glycine Schiff base with (R)-2-(N-{2-[N-alkyl-N-(1-phenylethyl)-amino]acetyl}amino) benzophenone; a case of configurationally stable stereogenic nitrogen

A family of chiral ligands derived from alpha-phenylethylamine and 2-aminobenzophenone were prepared by alkylation of the nitrogen atom. Upon reaction with glycine and a Ni(II) salt, these ligands were transformed into diastereomeric complexes, as a result of the configurational stability of the stereogenic nitrogen atom. Different diastereomeric ratios were observed depending on the substituent R introduced in the starting ligand, and stereochemical assignments were based on X-ray analysis, along with NMR studies and optical rotation measurements.

Objetividade e matemática na epistemologia de Gaston Bachelard

O conceito de objetividade é central na epistemologia de Gaston Bachelard (1884-1962). O problema que a pesquisa busca solucionar é a definição de objetividade na filosofia bachelardiana, o que implica na necessidade de explicitar a relação entre a objetividade e a matemática. A partir da leitura e da análise da obra epistemológica de Bachelard que trata da questão da objetividade, é demonstrado que o filósofo utiliza dois diferentes conceitos de objetividade: o primeiro é o de objetividade como reconhecimento e afastamento dos obstáculos epistemológicos que se apresentam como imagens subjetivas na prática científica; o segundo conceito é o de objetividade como o processo de retificação do conhecimento científico. Apresenta-se um exemplo de objetivação: o conceito de substância, no sentido realista ingênuo, desaparece nas ciências físicas do século XX, e surge o conceito complexo de um átomo não substancial, mas matemático. A partir desse exemplo, é demonstrado que, para Bachelard, o processo de objetivação do conhecimento é sincrônico ao processo de matematização do objeto. e a razão para essa relação entre a matematização e a objetivação é explicada.

Estudo DFT para a interação das moléculas de CO e NO com perovskitas de LaFePdO3 dopadas com Mn, Co e Ni

Recentemente, vem sendo desenvolvido o uso de catalisadores de metais preciosos suportados por óxidos do tipo perovskita em automóveis. Tais sistemas catalíticos são conhecidos como catalisadores Inteligentes. A tecnologia dos catalisadores inteligentes aponta para um novo futuro na catálise automotiva e surge como um promissor substituinte para os catalisadores convencionais. O entendimento dos principais fatores que levam a auto regeneração destes catalisadores é um passo fundamental no processo de evolução desta tecnologia. O mecanismo de auto regeneração é responsável diretamente pelo aumento considerável do tempo de vida útil destes catalisadores perante aos convencionais. Consequentemente, o seu custo é bem mais baixo comparado ao convencional. Outro fator relevante é a durabilidade estrutural e o grande número de possibilidade de combinações possíveis das perovskita que fazem delas excelentes estruturas para estudo. O objetivo do trabalho é entender o processo auto regenerativo do catalisador automotivo a base de perovskita dopadas com um átomo de cobalto, manganês e níquel e quando expostas a um ambiente com uma molécula de NO e CO , através da análise da interação desses átomos dopantes em relação a estrutura da perovskita e como se comportará o átomo de paládio ao entrar em contato com a molécula de NO e CO

Carbono: arte, ciência e as impurezas do tempo

Esta dissertação enfoca uma série de trabalhos artísticos desenvolvidos antes e durante o período do mestrado, como Sumi, Infiltração e Carbono, que utilizam a fotografia, o vídeo, a instalação, o desenho, a frotagem e a escultura como meios de produção. A partir das obras desenvolveu-se uma discussão teórica acerca de algumas das relações possíveis entre a arte e a ciência, enquanto esferas produtoras de conhecimento. O embate entre o homem e a natureza, através da filosofia, da ciência e da arte, é objeto de estudo, além das especificidades do átomo Carbono, em especial suas estruturas macroscópicas os materiais e suas transformações ao longo do tempo. A instabilidade, a entropia, o fluxo, os paradigmas e as diversas concepções de Tempo são alguns dos temas tratados nesta pesquisa, que utilizou como base os escritos e as obras de artistas, cientistas, filósofos e pesquisadores da arte e da ciência

Hardware reconfigurável para identificação de radionuclídeos utilizando o método de agrupamento subtrativo.

Fontes radioativas possuem radionuclídeos. Um radionuclídeo é um átomo com um núcleo instável, ou seja, um núcleo caracterizado pelo excesso de energia que está disponível para ser emitida. Neste processo, o radionuclídeo sofre o decaimento radioativo e emite raios gama e partículas subatômicas, constituindo-se na radiação ionizante. Então, a radioatividade é a emissão espontânea de energia a partir de átomos instáveis. A identificação correta de radionuclídeos pode ser crucial para o planejamento de medidas de proteção, especialmente em situações de emergência, definindo o tipo de fonte de radiação e seu perigo radiológico. Esta dissertação apresenta a aplicação do método de agrupamento subtrativo, implementada em hardware, para um sistema de identificação de elementos radioativos com uma resposta rápida e eficiente. Quando implementados em software, os algoritmos de agrupamento consumem muito tempo de processamento. Assim, uma implementação dedicada para hardware reconfigurável é uma boa opção em sistemas embarcados, que requerem execução em tempo real, bem como baixo consumo de energia. A arquitetura proposta para o hardware de cálculo do agrupamento subtrativo é escalável, permitindo a inclusão de mais unidades de agrupamento subtrativo para operarem em paralelo. Isso proporciona maior flexibilidade para acelerar o processo de acordo com as restrições de tempo e de área. Os resultados mostram que o centro do agrupamento pode ser identificado com uma boa eficiência. A identificação desses pontos pode classificar os elementos radioativos presentes em uma amostra. Utilizando este hardware foi possível identificar mais do que um centro de agrupamento, o que permite reconhecer mais de um radionuclídeo em fontes radioativas. Estes resultados revelam que o hardware proposto pode ser usado para desenvolver um sistema portátil para identificação radionuclídeos.

Átomos hidrogenoides em espaços com dimensionalidade D6=3: os casos não relativístico e relativístico

A possibilidade da existência de átomos de hidrogênio estáveis em dimensões superiores a três é abordada. O problema da dimensionalidade é visto como um problema de Física, no qual relacionam-se algumas leis físicas com a dimensão espacial. A base da análise deste trabalho faz uso das equações de Schrödinger (não relativística) e de Dirac (relativística). Nos dois casos, utiliza-se a generalização tanto do setor cinemático bem como o setor de interação coulombiana para variar o parâmetro topológico dimensão. Para o caso não relativístico, os auto-valores de energia e as auto-funções são obtidas através do método numérico de Numerov. Embora existam soluções em espaços com dimensões superiores, os resultados obtidos no presente trabalho indicam que a natureza deve, de alguma maneira, se manifestar em um espaço tridimensional.

Characterization of defect removal in hydrogenated and deuterated amorphous silicon thin film transistors

Thin film transistors (TFTs) utilizing an hydrogenated amorphous silicon (a-Si:H) channel layer exhibit a shift in the threshold voltage with time under the application of a gate bias voltage due to the creation of metastable defects. These defects are removed by annealing the device with zero gate bias applied. The defect removal process can be characterized by a thermalization energy which is, in turn, dependent upon an attempt-to-escape frequency for defect removal. The threshold voltage of both hydrogenated and deuterated amorphous silicon (a-Si:D) TFTs has been measured as a function of annealing time and temperature. Using a molecular dynamics simulation of hydrogen and deuterium in a silicon network in the H2 * configuration, it is shown that the experimental results are consistent with an attempt-to-escape frequency of (4.4 ± 0.3) × 1013 Hz and (5.7 ± 0.3) × 1013 Hz for a-Si:H and a-Si:D respectively which is attributed to the oscillation of the Si-H and Si-D bonds. Using this approach, it becomes possible to describe defect removal in hydrogenated and deuterated material by the thermalization energies of (1.552 ± 0.003) eV and (1.559 ± 0.003) eV respectively. This correlates with the energy per atom of the Si-H and Si-D bonds. © 2006 Elsevier B.V. All rights reserved.

Photo-assisted hydrosilylation of silicon nanoparticles: Dependence of particle size on grafting chemistry

Silicon nanoparticles between 2.5 nm and 30 nm in diameter were functionalized by means of photoassisted hydrosilylation reactions in the aerosol phase with terminal alkenes of varying chain length. Using infrared spectroscopy and nuclear magnetic resonance, the chemical composition of the alkyl layer was determined for each combination of particle size and alkyl chain length. The spectroscopic techniques were used to determine that smaller particles functionalized with short chains in the aerosol phase tend to attach to the interior (β) alkenyl carbon atom, whereas particles >10 nm in diameter exhibit attachment primarily with the exterior (α) alkenyl carbon atom, regardless of chain length. © 2011 American Chemical Society.

Effects of preferential transport in turbulent bluff-body-stabilized lean premixed CH 4/air flames

Preferential species diffusion is known to have important effects on local flame structure in turbulent premixed flames, and differential diffusion of heat and mass can have significant effects on both local flame structure and global flame parameters, such as turbulent flame speed. However, models for turbulent premixed combustion normally assume that atomic mass fractions are conserved from reactants to fully burnt products. Experiments reported here indicate that this basic assumption may be incorrect for an important class of turbulent flames. Measurements of major species and temperature in the near field of turbulent, bluff-body stabilized, lean premixed methane-air flames (Le=0.98) reveal significant departures from expected conditional mean compositional structure in the combustion products as well as within the flame. Net increases exceeding 10% in the equivalence ratio and the carbon-to-hydrogen atom ratio are observed across the turbulent flame brush. Corresponding measurements across an unstrained laminar flame at similar equivalence ratio are in close agreement with calculations performed using Chemkin with the GRI 3.0 mechanism and multi-component transport, confirming accuracy of experimental techniques. Results suggest that the large effects observed in the turbulent bluff-body burner are cause by preferential transport of H 2 and H 2O through the preheat zone ahead of CO 2 and CO, followed by convective transport downstream and away from the local flame brush. This preferential transport effect increases with increasing velocity of reactants past the bluff body and is apparently amplified by the presence of a strong recirculation zone where excess CO 2 is accumulated. © 2011 The Combustion Institute.

Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial-regrowth of amorphous Si

The fluorine redistribution during partial solid-phase-epitaxial-regrowth at 650°C of a preamorphized Si substrate implanted by F was investigated by atom probe tomography (APT), transmission electron microscopy, and secondary ions mass spectrometry. Three-dimensional spatial distribution of F obtained by APT provides a direct observation of F-rich clusters with a diameter of less than 1.5 nm. Density variation compatible with cavities and F-rich molecular ions in correspondence of clusters are in accordance with cavities filled by SiF 4 molecules. Their presence only in crystalline Si while they are not revealed by statistical analysis in amorphous suggests that they form at the amorphous/crystal interface. © 2012 American Institute of Physics.

Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold

The three-dimensional spatial distribution of Al in the high-k metal gates of metal-oxide-semiconductor field-effect-transistors is measured by atom probe tomography. Chemical distribution is correlated with the transistor voltage threshold (VTH) shift generated by the introduction of a metallic Al layer in the metal gate. After a 1050 °C annealing, it is shown that a 2-Å thick Al layer completely diffuses into oxide layers, while a positive VTH shift is measured. On the contrary, for thicker Al layers, Al precipitation in the metal gate stack is observed and the VTH shift becomes negative. © 2012 American Institute of Physics.

Three dimensional distributions of arsenic and platinum within NiSi contact and gate of an n-type transistor

Atom probe tomography was used to study the redistribution of platinum and arsenic atoms after Ni(Pt) silicidation of As-doped polycrystalline Si. These measurements were performed on a field-effect transistor and compared with those obtained in unpatterned region submitted to the same process. These results suggest that Pt and As redistribution during silicide formation is only marginally influenced by the confinement in microelectronic devices. On the contrary, there is a clear difference with the redistribution reported in the literature for the blanket wafers. Selective etching used to remove the non-reacted Ni(Pt) film after the first rapid heat treatment may induce this difference. © 2011 American Institute of Physics.

Spontaneous emission from radiative chiral nematic liquid crystals at the photonic band-gap edge: An investigation into the role of the density of photon states near resonance

In this article, we investigate the spontaneous emission properties of radiating molecules embedded in a chiral nematic liquid crystal, under the assumption that the electronic transition frequency is close to the photonic edge mode of the structure, i.e., at resonance. We take into account the transition broadening and the decay of electromagnetic field modes supported by the so-called "mirrorless"cavity. We employ the Jaynes-Cummings Hamiltonian to describe the electron interaction with the electromagnetic field, focusing on the mode with the diffracting polarization in the chiral nematic layer. As known in these structures, the density of photon states, calculated via the Wigner method, has distinct peaks on either side of the photonic band gap, which manifests itself as a considerable modification of the emission spectrum. We demonstrate that, near resonance, there are notable differences between the behavior of the density of states and the spontaneous emission profile of these structures. In addition, we examine in some detail the case of the logarithmic peak exhibited in the density of states in two-dimensional photonic structures and obtain analytic relations for the Lamb shift and the broadening of the atomic transition in the emission spectrum. The dynamical behavior of the atom-field system is described by a system of two first-order differential equations, solved using the Green's-function method and the Fourier transform. The emission spectra are then calculated and compared with experimental data. © 2013 American Physical Society.

Spontaneous emission from radiative chiral nematic liquid crystals at the photonic band-gap edge: an investigation into the role of the density of photon states near resonance.

In this article, we investigate the spontaneous emission properties of radiating molecules embedded in a chiral nematic liquid crystal, under the assumption that the electronic transition frequency is close to the photonic edge mode of the structure, i.e., at resonance. We take into account the transition broadening and the decay of electromagnetic field modes supported by the so-called "mirrorless"cavity. We employ the Jaynes-Cummings Hamiltonian to describe the electron interaction with the electromagnetic field, focusing on the mode with the diffracting polarization in the chiral nematic layer. As known in these structures, the density of photon states, calculated via the Wigner method, has distinct peaks on either side of the photonic band gap, which manifests itself as a considerable modification of the emission spectrum. We demonstrate that, near resonance, there are notable differences between the behavior of the density of states and the spontaneous emission profile of these structures. In addition, we examine in some detail the case of the logarithmic peak exhibited in the density of states in two-dimensional photonic structures and obtain analytic relations for the Lamb shift and the broadening of the atomic transition in the emission spectrum. The dynamical behavior of the atom-field system is described by a system of two first-order differential equations, solved using the Green's-function method and the Fourier transform. The emission spectra are then calculated and compared with experimental data.

Progress in the understanding of Ni silicide formation for advanced MOS structures

Metallic silicides have been used as contact materials on source/drain and gate in metal-oxide semiconductor (MOS) structure for 40 years. Since the 65 nm technology node, NiSi is the preferred material for contact in microelectronic due to low resistivity, low thermal budget, and low Si consumption. Ni(Pt)Si with 10 at.% Pt is currently employed in recent technologies since Pt allows to stabilize NiSi at high temperature. The presence of Pt and the very low thickness (<10 nm) needed for the device contacts bring new concerns for actual devices. In this work, in situ techniques [X-ray diffraction (XRD), X-ray reflectivity (XRR), sheet resistance, differential scanning calorimetry (DSC)] were combined with atom probe tomography (APT) to study the formation mechanisms as well as the redistribution of dopants and alloy elements (Pt, Pd.) during the silicide formation. Phenomena like nucleation, lateral growth, interfacial reaction, diffusion, precipitation, and transient phase formation are investigated. The effect of alloy elements (Pt, Pd.) and dopants (As, B.) as well as stress and defects induced by the confinement in devices on the silicide formation mechanism and alloying element redistribution is examined. In particular APT has been performed for the three-dimensional (3D) analysis of MOSFET at the atomic scale. The advances in the understanding of the mechanisms of formation and redistribution are discussed. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.