Liquid encapsulated-melt zone processing of GaAs

A liquid encapsulated melt Bone process has been developed for single crystal growth of GaAs. Single crystals of 40 mm long have been grown with this technique. To avoid unwanted nucleation events and maintain a constant crystal diameter, from top to bottom growth using a short zone with a convex zone surface was found to give the best results. An arsenic overpressure was used to in conjunction with a B2O3 encapsulant in order to suppress arsenic dissociation from the melt and maintain the stoichiometry of the crystal.

Silicon: the promising material for phontonic integrated circuits platform

The development of optical network demands integrated arid multiple functionality modules to lowing cost and acquire highly reliability. Among the various contender materials to be photonic integrated circuits platform, silicon exhibits dominant characteristics and is the most promising platform materials. The paper compares the characteristics of some candidate materials with silicon and reviews recent progress in silicon based photonic integration technology. Tile challenges to silicon for optical integration for optical networking application arc also indicated.

Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing

A novel pulsed rapid thermal processing (PRTP) method has been used for realizing the solid-phase crystallization of amorphous silicon films prepared by PECVD. The microstructure and surface morphology of the crystallized films are investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results indicate that this PRTP is a suitable post-crystallization technique for fabricating large-area polycrystalline silicon films with good structural qualities such as large grain size, small lattice microstain and smooth surface morphology on low-cost substrate.

JFET SOS devices: Processing and gamma radiation effects

A process for fabricating n channel JFET/SOS (junction field-effect transistors on silicon-on-sapphire) has been researched. The gate p(+)n junction was obtained by diffusion, and the conductive channel was gotten by a double ion implantation. Both enhancement and depletion mode transistors were fabricated in different processing conditions. From the results of the Co-50 gamma ray irradiation experimental we found that the devices had a good total dose radiation-hardness. When the tot;ll dose was 5Mrad(Si), their threshold voltages shift was less than 0.1V. The variation of transconductance and the channel leakage current were also little.

Improved digital processing method used for image motion measurement based on hybrid opto-digital joint transform correlator

Hybrid opto-digital joint transform correlator (HODJTC) is effective for image motion measurement, but it is different from the traditional joint transform correlator because it only has one optical transform and the joint power spectrum is directly input into a digital processing unit to compute the image shift. The local cross-correlation image can be directly obtained by adopting a local Fourier transform operator. After the pixel-level location of cross-correlation peak is initially obtained, the up-sampling technique is introduced to relocate the peak in even higher accuracy. With signal-to-noise ratio >= 20 dB, up-sampling factor k >= 10 and the maximum image shift <= 60 pixels, the root-mean-square error of motion measurement accuracy can be controlled below 0.05 pixels.

Influence of processing medium on frictional wear properties of ball bearing steel prepared by laser surface melting coupled with bionic principles

Coupling with bionic principles, an attempt to improve the wear resistance of ball bearing steel (GCr15) with biomimetic units on the surface was made using a pulsed Nd: YAG laser. Air and water film was employed as processing medium, respectively. The microstructures of biomimeitc units were examined by scanning electron microscope and X-ray diffraction was used to describe the microstructure and identify the phases as functions of different mediums as well as water film with different thicknesses. The results indicated that the microstructure zones in the biomimetic specimens processed with water film were more refined and had better wear resistance increased by 55.8% in comparison with that processed in air; a significant improvement in microhardness was achieved by laser surface melting. The application of water film provided considerable microstructural changes and much more regular grain shape in biomimetic units, which played a key role in improving the wear resistance of ball bearing steel. (c) 2010 Elsevier B.V. All rights reserved.

Influence of processing temperature on microstructure and microhardness of copper subjected to high-pressure torsion

Cu samples were subjected to high-pressure torsion (HPT) with up to 6 turns at room temperature (RT) and liquid nitrogen temperature (LNT), respectively. The effects of temperature on grain refinement and microhardness variation were investigated. For the samples after HPT processing at RT, the grain size reduced from 43 mu m to 265 nm, and the Vickers microhardness increased from HV52 to HV140. However, for the samples after HPT processing at LNT, the value of microhardness reached its maximum of HV150 near the center of the sample and it decreased to HV80 at the periphery region. Microstructure observations revealed that HPT straining at LNT induced lamellar structures with thickness less than 100 nm appearing near the central region of the sample, but further deformation induced an inhomogeneous distribution of grain sizes, with submicrometer-sized grains embedded inside micrometer-sized grains. The submicrometer-sized grains with high dislocation density indicated their nonequilibrium nature. On the contrary, the micrometer-sized grains were nearly free of dislocation, without obvious deformation trace remaining in them. These images demonstrated that the appearance of micrometer-sized grains is the result of abnormal grain growth of the deformed fine grains.

Reduction-Based Model Updating of a Scaled Offshore Platform Structure

This paper attempts to develop a reduction-based model updating technique for jacket offshore platform structure. A reduced model is used instead of the direct finite-element model of the real structure in order to circumvent such difficulties as huge degrees of freedom and incomplete experimental data that are usually civil engineers' trouble during the model updating. The whole process consists of three steps: reduction of FE model, the first model updating to minimize the reduction error, and the second model updating to minimize the modeling error of the reduced model and the real structure. According to the performance of jacket platforms, a local-rigidity assumption is employed to obtain the reduced model. The technique is applied in a downscale model of a four-legged offshore platform where its effectiveness is well proven. Furthermore, a comparison between the real structure and its numerical models in the following model validation shows that the updated models have good approximation to the real structure. Besides, some difficulties in the field of model updating are also discussed.

A high charge state all-permanent magnet ECR ion source for the IMP 320 kV HV platform

A 320 kV high voltage (HV) platform has been constructed at Institute of Modern Physics (IMP) to satisfy the increasing requirements of experimental studies in some heavy ion associated directions. A high charge state all-permanent magnet ECRIS-LAPECR2 has been designed and fabricated to provide intense multiple charge state ion beams (such as 1000 e mu A O6+, 16.7 e mu A Ar14+, 24 e mu A Xe27+, etc.) for the HV platform. LAPECR2 has a dimension of 0 650 mm x 560 mm. The powerful 3D magnetic confinement to the ECR plasma and the optimum designed magnetic field for the operation at 14.5 GHz makes it possible to obtain very good performances from this source. After a brief introduction of the ECRIS and accelerator development at IMP, the conceptual design of LAPECR2 source is presented. The first test results of this all-permanent magnet ECRIS are given in this paper.