Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy

The influence of electric fields on surface migration of Gallium (Ga) and Nitrogen (N) adatoms is studied during GaN growth by molecular beam epitaxy (MBE). When a direct current (DC) is used to heat the sample, long distance migration of Ga adatoms and diffusion asymmetry of N adatoms at steps are observed. On the other hand, if an alternating current (AC) is used, no such preferential adatom migration is found. This effect is attributed to the effective positive charges of surface adatoms. representing an effect of electro-migration. The implications of such current-induced surface migration to GaN epitaxy are subsequently investigated. It is seen to firstly change the distribution of Ga adatoms on a growing surface, and thus make the growth to be Ga-limited at one side of the sample but N-limited at the other side. This leads to different optical qualities of the film and different morphologies of the surface. (C) 2001 Elsevier Science B.V. All rights reserved.

Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy

We have studied the growth of GaInNAs/GaAs quantum well (QW) by molecular beam epitaxy using a DC plasma as the N sourer. The N concentration was independent of the As pressure and the In concentration, but inversely proportional to the growth rate. It was almost independent of T, over the range of 400-500 degreesC, but dropped rapidly when T-g exceeded 500 degreesC. Thermally-activated N surface segregation is considered to account for the strong falloff of the N concentration. As increasing N concentration, the steep absorption edge of the photovoltage spectra of GaInNAs/GaAs QW became gentle, the full-width at half-maximum of the photoluminescence (PL) peal; increased rapidly, and a so-called S-shaped temperature dependence of PL peak energy showed up. All these were attributed to the increasing localized state as N concentration. Ion-induced damage was one of the origins of the localized state. A rapid thermal annealing procedure could effectively remote the localized state. (C) 2001 Elsevier Science D.V. All rights reserved.

Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

The optimum growth condition of GaInNAs/GaAs quantum wells (QWs) by plasma-assisted molecular beam epitaxy was investigated. High-resolution X-ray diffraction and photoluminescence (PL) measurements showed that ion damage drastically degraded the quality of GaNAs and GaInNAs QWs and that ion removal magnets can effectively remove the excess ion damage. Remarkable improvement of PL intensity and obvious appearance of pendellosung fringes were observed by removing the N ions produced in the plasma cell. When the growth rate increased from 0.73 to 1.2 ML/s, the optimum growth temperature was raised from 460 degreesC to 480 degreesC and PL peak intensity increased two times. Although the N composition decreased with increasing growth rate, degradation of optical properties of GaInNAs QWs was observed when the growth rate was over 0.92 ML/s. Due to low-temperature growth of GaInNAs QWs, a distinctive reflection high-energy electron diffraction pattern was observed only when the GaAs barrier was grown under lower As-4 pressure. The samples with GaAs barriers grown under lower As-4 pressure (V/III ratio about 24) exhibited seven times increase in PL peak intensity compared with those grown under higher As-4 pressure (V/III ratio about 50). (C) 2001 Elsevier Science B,V. All rights reserved.

Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy

In this paper, In0.5Ga0.5As quantum dots are fabricated on GaAs (100) and (n11)A/B (n = 3, 5) substrates by molecular beam epitaxy. Atomic force microscopy shows that the quantum dots on each oriented substrate are different in size, shape and distribution. In addition, photoluminescence spectra from these quantum dots are different in emission peak position, line width and integrated intensity. Auger electron spectra demonstrate that In concentration is larger near the surface than inside quantum dots, suggesting the occurrence of surface segregation effect during the growth of InGaAs dots. The surface segregation effect is found to be related to substrate orientation. (C) 2000 Elsevier Science B.V. All rights reserved.

Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface

We have found that GaN epilayers grown by NH3-source molecular beam epitaxy (MBE) contain hydrogen. Dependent on the hydrogen concentration, GaN on (0001) sapphire can be either under biaxially compressive strain or under biaxially tensile strain. Furthermore, we notice that background electrons in GaN increase with hydrogen incorporation. X-ray photoelectron spectroscopy (XPS) measurements of the N1s region indicate that hydrogen is bound to nitrogen. So, the microdefect Ga...H-N is an effective nitrogen vacancy in GaN, and it may be a donor partly answering for the background electrons. (C) 1999 Elsevier Science B.V. All rights reserved.

Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials

Gas source molecular beam epitaxy has been used to grow Si1-xGex alloys and Si1-xGex/Si multi-quantum wells (MQWs) on (100) Si substrates with Si2H6 and GeH4 as sources. Heterostructures and MQWs with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. The structural stability and strain relaxation in Si1-xGex/Si heterostructures have been investigated, and compared to that in the As ion-implanted Si1-xGex epilayers. The results show that the strain relaxation mechanism of the non-implanted Si1-xGex epilayers is different from that of the As ion-implanted Si1-xGex epilayers.

Formation and magnetic properties of Fe16N2 films prepared by ion-beam-assisted deposition

Fe-N films containing the Fe16N2 phase were prepared in a high-vacuum system of ion-beam-assisted deposition (IBAD). The composition and structure of the films were analysed by Auger electron spectroscopy (AES) and X-ray diffraction (XRD), respectively. Magnetic properties of the films were measured by a vibrating sample magnetometer (VSM). The phase composition of Fe-N films depend sensitively on the N/Fe atomic arrival ratio and the deposition temperature. An Fe16N2 film was deposited successfully on a GaAs (1 0 0) substrate by IBAD at a N/Fe atomic arrival ratio of 0.12. The gram-saturation magnetic moment of the Fe16N2 film obtained is 237 emu/g at room temperature, the possible cause has been analysed and discussed. Hysteresis loops of Fe16N2 have been measured, the coercive force H-c is about 120 Oe, which is much larger than the value for Fe, this means the Fe16N2 sample exhibits a large uniaxial magnetocrystalline anisotropy. (C) 1998 Elsevier Science B.V. All rights reserved.

Characteristics of beam profile of Gaussian beam passing through an axicon

Bessel beam can overcome the limitation of the Rayleigh range of Gaussian beam with the same spot size propagation without any spreading due to diffraction, which is considered as an useful function in guiding particles in the next generation of optical tweezers. The mathematical description of the Bessel beam generated by an axicon is usually based on the Fresnel diffraction integral theory. In this paper, we deduce another type of analytic expression suitable for describing the beam profile generated from the axicon illuminated by the Gaussian beam based on the interferential theory. Compared with the Fresnel diffraction integral theory, this theory does not use much approximation in the process of mathematical analysis. According to the derived expression, the beam intensity profiles at any positions behind the axicon can be calculated not just restricted inside the cross region as the Fresnel diffraction integral theory gives. The experiments prove that the theoretical results fit the experimental results very well. (C) 2004 Elsevier B.V. All rights reserved.

Analytical method of predicating the instabilities of a micro arch-shaped beam under electrostatic loading

An arch-shaped beam with different configurations under electrostatic loading experiences either the direct pull-in instability or the snap-through first and then the pull-in instability. When the pull-in instability occurs, the system collides with the electrode and adheres to it, which usually causes the system failure. When the snap-through instability occurs, the system experiences a discontinuous displacement to flip over without colliding with the electrode. The snap-through instability is an ideal actuation mechanism because of the following reasons: (1) after snap-through the system regains the stability and capability of withstanding further loading; (2) the system flips back when the loading is reduced, i.e. the system can be used repetitively; and (3) when approaching snap-through instability the system effective stiffness reduces toward zero, which leads to a fast flipping-over response. To differentiate these two types of instability responses for an arch-shaped beam is vital for the actuator design. For an arch-shaped beam under electrostatic loading, the nonlinear terms of the mid-plane stretching and the electrostatic loading make the analytical solution extremely difficult if not impossible and the related numerical solution is rather complex. Using the one mode expansion approximation and the truncation of the higher-order terms of the Taylor series, we present an analytical solution here. However, the one mode approximation and the truncation error of the Taylor series can cause serious error in the solution. Therefore, an error-compensating mechanism is also proposed. The analytical results are compared with both the experimental data and the numerical multi-mode analysis. The analytical method presented here offers a simple yet efficient solution approach by retaining good accuracy to analyze the instability of an arch-shaped beam under electrostatic loading.

Evaporation of Ethanol Drops on a Heated Substrate Under Microgravity Conditions

We present in this paper results obtained from a parabolic flight campaign regarding ethanol sessile drop evaporation under reduced gravity conditions. Drops are created using a syringe pump by means of injection through a PTFE (polytetrafluoroethylene) substrate. The drops are recorded using a video camera and an infrared camera to observe the thermal motion inside the drop and on the heating substrate. The experimental set-up presented in this paper enables the simultaneous visualization and access to the heat flux density that is transferred to the drop using a heat flux meter placed between the heating block and the PTFE substrate. We evidence original thermal spreading phenomena during the ethanol drop creation on a heated PTFE substrate. The drop exhibits specific behaviour which is discussed here. This work is performed in the frame of a French-Chinese collaboration (project IMPACHT) for future experiments in a Chinese scientific satellite.

Droplet Image Feedback Control System in Evaporation Experiment

In order to realize the steady-state droplet evaporation, image feedback control system is designed based on DSP. The system has three main functions: to capture and store droplet images during the experiment; to calculate droplet geometrical and physical parameters such as volume, surface area, surface tension and evaporation velocity at a high-precision level; to keep the droplet volume constant. The DSP can drive an injection controller with the PID control to inject liquid so as to keep the droplet volume constant. The evaporation velocity of droplet can be calculated by measuring the injected volume during the evaporation. The structure of hardware and software of the control system, key processing methods such as contour fitting and experimental results are described.

Coupling of thermocapillary convection and evaporation effect in a liquid layer when the evaporating interface is open to air

The coupling mechanism of thermocapillary convection and evaporation effect in evaporating liquids was studied experimentally. The experiments were carried out to study a thin evaporating liquid layer in a rectangular test cell when the upper surface was open to air. By altering the imposed horizontal temperature differences and heights of liquid layers, the average evaporating rate and interfacial temperature profiles were measured. The flow fields were also visualized by PIV method. For comparison, the experiments were repeated by use of another two non-evaporating liquids to study the influence of evaporation effect. The results reveal evidently the role that evaporation effect plays in the coupling with thermocapillary convection.