Structural and optical investigation of Mn-doped ZnS nanocrystals

Using a solution-based chemical method, we have prepared ZnS nanocrystals doped with high concentration of Mn2+. The X-ray diffraction analysis confirmed a zinc blende structure. The average size was about 3 nm. Photoluminescence spectrum showed room temperature emission in the visible spectrum, which consisted of the defect-related emission and the T-4(1)-(6)A(1) emission of Mn2+ ions. Compared with the undoped sample, the luminescence of the ZnS:Mn sample is enhanced by more than an order of magnitude, which indicated that the Mn2+ ions can efficiently boost the luminescence of ZnS nanocrystals.

Recombination kinetics of Te isoelectronic centers in ZnSTe

The recombination kinetics of Te isoelectronic centers in ZnS1-xTex (0.0065 less than or equal to x less than or equal to 0.85) alloys is studied by time-resolved photoluminescence (TRPL) at low temperature. The measured radiative recombination lifetimes of different Te bound exciton states are quite different, varying from a few nanoseconds to tens of nanosecond. As the bound exciton state evolves from a single Te impurity (Te-1) to larger Te clusters (Te-n, n=2,3,4), the recombination lifetime increases. It reaches maximum (similar to40 ns) for the Te-4 bound states at x=0.155. The increase of the exciton lifetime is attributed to the increasing exciton localization effect caused by larger localization potential. In the large Te composition range (x > 0.155), the exciton recombination lifetime decreases monotonically with Te composition. It is mainly due to the hybridization between the Te localized states and the host valence band states. The composition dependences of the exciton binding energy and the photoluminescence (PL) line width show the similar tendency that further support the localization picture obtained from the TRPL measurement. (C) 2005 American Institute of Physics.

Photoluminescence degradation in GaN induced by light enhanced surface oxidation

The exponential degradation of the photoluminescence (PL) intensity at the near-band-gap was observed in heavily doped or low-quality GaN with pristine surface under continuous helium-cadmium laser excitation. In doped GaN samples, the degradation speed increased with doping concentration. The oxidation of the surface with laser irradiation was confirmed by x-ray photoemission spectroscopy measurements. The oxidation process introduced many oxygen impurities and made an increase of the surface energy band bending implied by the shift of Ga 3d binding energy. The reason for PL degradation may lie in that these defect states act as nonradiative centers and/or the increase of the surface barrier height reduces the probability of radiative recombination.

Synthesis and photoluminescence of ZnS : Cu nanoparticles

The room-temperature photoluminescence (PL) of copper doped zinc sulfide (ZnS:Cu) nanoparticles were investigated. These ZnS:Cu nanoparticles were synthesized by a facile wet chemical method, with the copper concentration varying from 0 to 2 mol%. By Gaussian fitting, the PL spectrum of the undoped ZnS nanoparticles was deconvoluted into two blue luminescence peaks (centered at 411 nm and 455 nm, respectively), which both can be attributed to the recombination of the defect sates of ZnS. But for the doped samples, a third peak at about 500 nm was also identified. This green luminescence originates from the recombination between the shallow donor level (sulfur vacancy) and the t(2) level of Cu2+. With the increase of the CU2+ concentration, the green emission peak is systematically shifted to longer wavelength. In addition, it was found that the overall photoluminescence intensity is decreased at the Cu2+ concentration of 2%. The concentration quenching of the luminescence may be caused by the formation of CuS compound. (c) 2005 Elsevier B.V. All rights reserved.

Electronic properties of sulfur passivated undoped-n(+) type GaAs surface studied by photoreflectance

Photoreflectance (PR) has been used to study surface electronic properties (electric field, Fermi level pinning, and density of surface states) of undoped-n(+) (UN+) GaAs treated in the solution of ammonium sulfide in isopropanol. Complex Fourier transformation (CFT) of PR spectra from passivated surface shows that the sulfur overlay on GaAs surface makes no contribution to Franz-Keldysh oscillations (FKOs). The barrier height measured by PR is derived from surface states directly, rather than the total barrier height, which includes the potentials derived from Ga-S and As-S dipole layers. Comparing with native oxidated surface, the passivation leads to 80 meV movement of surface Fermi level towards the conduction band minimum, and reduction by more than one order in density of surface states. (C) 2003 Elsevier Science B.V. All rights reserved.

An investigation on the pressure-induced phase transition of nanocrystalline ZnS

An in situ energy dispersive x-ray diffraction study on nanocrystalline ZnS was carried out under high pressure up to 30.8 GPa by using a diamond anvil cell. The phase transition from the wurtzite to the zinc-blende structure occurred at 11.5 GPa, and another obvious transition to a new phase with rock-salt structure also appeared at 16.0 GPa-which was higher than the value for the bulk material. The bulk modulus and the pressure derivative of nanocrystalline ZnS were derived by fitting the Birch-Murnaghan equation. The resulting modulus was higher than that of the corresponding bulk material, indicating that the nanomaterial has higher hardness than the bulk material.

Pressure behavior of Te isoelectronic centers in ZnS : Te

ZnS:Te epilayers with Te concentration from 0.5% to 3.1% were studied by photoluminescence under hydrostatic pressure at 15 K. Two emission bands related to the isolated Te-1 and Te-2 pair isoelectronic centers were observed in the samples with Te concentrations of 0.5% and 0.65%. For the samples with Te concentrations of 1.4% and 3.1%, only the Te-2-related peak was observed. The pressure coefficients of all the Te-1-related bands were found to be unexpectedly much larger than that of the ZnS band gap. The pressure coefficients for all the Te-2-related bands are, however, rather smaller than that of ZnS band gap as usually observed. Analysis based on a Koster-Slater model indicates that an increase of the valence bandwidth with pressure is the main reason for the faster pressure shift of the Te-1 centers, and the huge difference in the pressure behavior of the Te-1 and Te-2 centers is due mainly to the difference in the pressure-induced enhancement of the impurity potential on the Te-1 and Te-2 centers. (C) 2002 American Institute of Physics.

Photoluminescence from ZnS1-xTex alloys under hydrostatic pressure

ZnS1-xTex (0.02less than or equal toxless than or equal to0.3) alloys are studied by photoluminescence under hydrostatic pressure at room temperature. Only a wide emission band is observed for each sample. Its peak energy is much lower than the corresponding band gap of alloys. These bands are ascribed to the radiative annihilation of excitons bound at Te-n(ngreater than or equal to2) isoelectronic centers. The pressure coefficients of the emission bands are smaller than those of alloy band gaps from 48% to 7%. The difference of the pressure coefficient of the emission band and the band gap increases when the binding energy of Te-n centers decreases. It seems contrary to our expectation and needs further analysis. The integrated intensities of emission bands decrease with increasing pressure due to the decreasing of the absorption coefficient associated with the Te-n centers under pressure. According to this model the Stokes shifts between the emission and absorption bands of the Te-n centers are calculated, which decrease with the increasing Te composition in alloys.

Pressure dependence of Mn2+ fluorescence in ZnS : Mn2+ nanoparticles

The photoluminescence of Mn2+ in ZnS:Mn2+ nanoparticles with an average size of 4.5 nm has been measured under hydrostatic pressure from 0 to 6 GPa. The emission position is red-shifted at a rate of -33.3+/-0.6meV/GPa, which is in good agreement with the calculated value of -30.4meV/GPa using the crystal field theory. (C) 2000 Elsevier Science B.V. All rights reserved.

Optical properties and electrical bistability of CdS nanoparticles synthesized in dodecanethiol

We reported the synthesis of CdS semiconductor nanoparticles using a simple one-pot reaction by thermolysis of cadmium acetylacetonate in dodecanethiol. Optical measurements of the as-obtained CdS nanoparticles revealed that their optical properties were closely related to surface effects. Based upon the cocktail of poly (N-vinylcarbazole) (PVK) and CdS nanoparticles, a bistable device was fabricated by a simple solution processing technique. Such a device exhibited a remarkable electrical bistability, which was attributed to the electric field-assisted charge transfer between PVK and the CdS nanoparticles capped by dodecaethiol. The conduction mechanism changed from an injection-controlled current to a bulk-controlled one during switching from OFF-state to ON-state.

Formation and Properties of a Novel Heavy-Metal Chalcogenide Glass Doped with a High Dysprosium Concentration

A novel heavy-metal chalcogenide glass doped with a high dysprosium ion (Dy(3+)) concentration was prepared by the well-established melt-quenching technique from high-purity elements. The results show that when Cadmium (Cd) is introduced into chalcogenide glass, the concentration of Dy(3+) ions doped in GeGaCdS glasses is markedly increased, the thermodynamic performance improves, and the difference between T(g) and T(x) is >120 degrees C. The Vickers microhardness is also modified greatly, about 245 kgf/mm(2). The optical spectra indicate that all absorption and emission bands of Dy(3+) are clearly observed and red-shifted with increasing Dy(3+) concentration.

利用Cyanex 301萃取体系制备纳米硫化物的研究

溶剂萃取由于具有处理量大、操作简单、易于连续化等优点，被广泛应用于湿法冶金工业。而溶剂萃取过程通常都伴随着有机相微乳体系的形成、变化、甚至完全破乳的过程以及萃合物分子聚集状态的不断变化，因此可以认为，液－液萃取体系提供了一系列可调控的微乳体系。相对于液液萃取在金属分离方面的广泛应用，液液萃取过程中形成的微乳体系在材料制备方面的应用研究还处于起始阶段。本论文在广泛调研文献资料的基础上，开展了利用硫代有机膦萃取剂Cyanex 301萃取体系制备纳米硫化物的研究，取得了一些有意义的结果。该工作的开展将对促进溶剂萃取分离与纳米材料制备一体化研究起到一定的作用，并为寻找简便易行且适用于大规模生产的纳米材料制备新方法提供思路。主要内容如下： 1. 通过两相热法，利用Cyanex 301－AgNO3两相萃取体系制备了尺寸均匀、分散性好的Ag2S纳米粒子。并且发现了与通常纳米材料制备过程不一样的现象，即Ag2S产物的粒径随着反应温度的升高逐渐增大，这与通常观察到的产物颗粒随反应温度升高而变小的现象完全不同。通过红外谱图分析，确定了反应机理，并提出了影响产物粒径的可能机制，认为产物粒径的变化是Cyanex 301作为硫源与作为表面修饰剂相互竞争的结果。 2. 通过两步法合成了四面体、类六角锥和六角片型的Ag2S/CdS纳米复合材料。Ag2S纳米粒子在产物的形成中起到了晶种与模板导向作用，溶剂对产物的形貌也起到诱导作用。 3. 利用两相热法，一步合成了CuS微米花和微米球自组装结构，产物的形貌随水相金属离子浓度的改变而发生变化。

热可交联聚酰亚胺/高性能热塑性树脂共混体系的研究

1．热可交联聚酰亚胺／高性能热塑性树脂共混体系的研究聚苯硫醚［Poly（phenylene sulfide），PPS］是由刚性结构的苯环和柔性的硫醚连接起来，交替排列构成的线性高分子化合物，具有高的热稳定性、良好的耐化学药品性、优良的电绝缘性、耐老化性和阻燃性等综合性能优异的高性能树脂。聚醚矾〔Poly（ether sulfone），PES］是一种非结晶性的热塑性工程塑料一，具有优异的热稳定性、耐高温蠕变性及优异的物理机械性能。其高的玻璃化转变温度（Tg=225℃），使其可以在较高温度下作为结构材料使用。本论文研究了PPS/PES二元共混物的热性能和动态力学性能，并以热可控交联的低分子量多官能单体PMR-POI（聚醚酰亚胺）为界面增强剂，分别研究了POI与PPS、PES之间的接枝和／或交联反应，POI对PPS结晶行为的影响，POI对PES分子运动的影响和POI对PPS/PES共混体系的界面增强。主要结果如下：1．PPS/PES共混物相容性的特征在于选择性的部分相容，少量的非晶PPS分子可以扩散进入PES相区，相反的扩散过程则不会发生。2．PPS/PES共混物的热学性质和动态力学性能主要受连续相的控制。3．PPS相的性能主要受其结晶度的影响，因此能够改变其结晶度的因素均会改变PPS相的性质。4．光谱学和流变的证据表明，POI同PES，PPs共混过程中有接枝反应发生，分子链增长，分子量加大。这种接枝和／或交联反应的程度是热可控的。5．POI是PPS的增塑剂，成核剂和扩链剂，与POI共混使得PPS结晶速率增加，平衡熔点上升，表面折叠自由能降低。6；在PES/POI体系中Pol对PEs起到了增塑的作用，Tg降低，经高温热处理后Tg上升。因此，POI对PES性能的影响也是热可控的。7．PMR-POI能够在PPS/PES共混体系中有效地扩散并起到了降低分散相粒子的尺寸、增强界面的作用。它是该共混体系的有效界面增强剂。8．"高温退火既能够提高扩散速率也能够提高反应速率；二者相互竞争。2．马来酸配封端溉碳酸丙撑酯的研究二氧化碳与环氧丙烷交替共聚物（polypropylene careonate，PPC）是由二氧化碳活化并与环氧丙烷共聚而成的一类可完全生物降解的新型高分子材料，具有巨大的潜在应用价值。本论文讨论了马来酸配封端的聚碳酸丙撑酯（MA-PPC）和未封端的PPC的粘弹性、流变行为以及热降解和热分解行为，并得出如下结论：1．马来酸配封端抑制了PPC解拉链式的热分解和无规链断裂热降解，PPC的热稳定性和力学性能得到提高。2．PPC和MA-PPC在玻璃化转变温度有相似的自由体积分数，PPC的Tg比MA-PPC稍低。虽然PPC和MA-PPC玻璃化转变表观活化能E。和平均松弛时间T随温度升高单调降低，但PPC的分子运动对温度更敏感，而MA-PPC较稳定。马来酸配封端改变了PPC分子运动的特征及松弛行为，许多实验证据证明，这是由于封端后的PPC大分子链间的相互作用增强及分子链缠结密度增加。3．MA-PPC在70℃左右会发生脱水，实现大分子偶联反应并得到变温红外光谱、分子量成倍增加及线膨胀数据的有力支持。4．用零剪切粘度几。的方法测得PPC及MA－PPC加工过程中的热降解温度，它们分别为150℃和175℃，在此温度以上，η0降低速率的增加归因于大分子的主链断裂以及解拉链反应。5．测得了PPC的临界缠结分子量，它几乎是MA-PPC相应值（6613）的3倍。这表明马来酸配封端不仅改善了PPC的熔体弹性，而且也大大增强了PPC的缠结密度以及分子链间的相互作用。6．在本实验条件下在氮气和空气的气氛中，MA-PPC同PPC的热降解和热分解行为几乎一致，即在PPc的加土过程可以忽略氧气对其的影响。7．虽然MA-PPC的玻璃化温度在40℃左右，但在40℃-120℃的温度区间内，MA-PPC达不到粘流状态。8．没有剪切力时在120℃-150℃，30分钟内，MA-PPC几乎没有降解，在静态条件下，低于170℃时，MA-PPC的解拉链式降解是十分轻微的，当温度超过170℃，PPC降解相当严重。9．在热机械力存在的情况下，发生无规断链的机会增加，无规断链又会加速解拉链降解，因此实际加工中的加工窗口比静态下窄，MIA-PPC的加工窗口应为130℃-160℃。10．MA-PPC的热分解过程是一步完成的，热分解温度随升温速率的加快而提高，并计算出热分解的表观活化能为623.3KJ／mol。

由异构的二苯醚二酐和二苯硫醚二酐合成的聚酰亚胺

本论文的目的是研究由桥联二配的异构体合成的聚酰亚胺的性质，期望能发现既不牺牲热性能和机械性能又能改善加工性的新型聚酰亚胺材料。国内外目前在此方面的研究还较少，对异构化聚酰亚胺进行系统研究既填补了基础研究在此方面的空白，也对发展新的聚酰亚胺品种具有很天的实际意义。本论文在聚酞亚胺组过去工作的基础上，以氯代苯配为原料合成了二苯醚二配（ODPA）和二苯硫醚二酐（TDPA）两种桥联二配的3，3'-位和3，4'-位异构体（以桥键相对苯酐单元的位置命名），并得到了3，3’一ODPA和3，4'-ODPA的单晶，发现它们的顺反构象在单晶中都能稳定存在，其扭曲结构对聚合物的性质有很大影响。本论文还以三种ODPA异构体和三种TDPA异构体为基础合成了一系列的热塑性聚酰亚胺，对它们的性质进行了研究，发现以3，3'-位和3，4'-位二配为基础的聚酰亚胺在酚类溶剂和DMAc、DMF、NMP等极性溶剂中具有良好的溶解性，在DMSO和CHC13中部分溶解，而以4，4'-位二配为基础的聚酰亚胺则只溶于酚类溶剂。异构ODPA和TDPA系列基于同种二胺的聚酰亚胺薄膜都具有高的耐热性，后者的热氧化稳定性比前者稍高。以3，3'-位二酐为基础的聚酰胺酸热亚胺化的薄膜较脆，但由它们化学亚胺化后的聚酰亚胺粉末再溶解可得优良力学性能的韧膜。以3，4'-位二醉和4，4'-位二配为基础的聚酰胺酸热亚胺化薄膜具有相近的优异力学性质。对以4，4'-ODPA为主的共聚、共混聚酰胺酸热亚胺化薄膜力学性能的研究表明，当3，3'-OD队的含量超过30％时，薄膜脆性明显增加，而3，4'-ODPA以任何比例和4，4'-ODPA共聚、共混都能得到强韧的薄膜。异构TDPA系列聚酰亚胺的力学性能同ODPA系列相当。由异构ODPA和TDPA系列合成的聚酰亚胺动态力学性质规律相同。它们的玻璃化转变温度（Tg）均为3，3'-位的最高，3，4'-位次之，4，4'-位的最低。对于β转变，均为4，4'-位的Tβ最高，β转变峰也最强，3，4'-位的Tβ较低，β转变峰也稍弱，3，3'-位的β转变最弱，没有明显的β转变峰。由ODPA系列异构体同ODA共聚、共混的热酞亚胺化聚酰亚胺薄膜除3，3'-ODPA含量为75％时膜脆DMTA未测外，其他共聚、共混聚酰亚胺薄膜的Tg均随4，4'-位含量的增加而降低，Tp随4，4'-位含量的增加而升高，β转变峰的强度也随4，4'-位含量的增加而增大，Tp（K）/Tg（K）数值均在0.68～0.75之间。含3，3'-位和3，4'-位二配的聚酰亚胺薄膜在Tg过后不久即被迅速拉长至伸长率超过30％（DMTA仪器的设限），而由4，4'-位二酐合成的聚酰亚胺则到450℃伸长率均未超30％。经对ODPA系列异构体同·ODA聚合的聚酰亚胺薄膜拉伸前后的WAXD研究发现，4，4'-ODPA/ODA的薄膜在拉伸前后结晶峰无变化，表明Tg前后其分子间均有较大的作用力，其他两种膜拉伸后有明显的取向结晶现象，由此可见它们在Tg后的迅速伸长可能是因为其扭曲结构使得分子链堆积疏松，链段的活动性随自由体积的增大而迅速增强。对中等分子量的异构ODPA和TDPA系列同ODA聚合的聚酰亚胺的流变性质研究发现，3，4'-位聚酰亚胺拥有最低的熔体粘度，可能因为其分子堆积比4，4'-位的疏松，而链刚性又比3，3'-位的弱。由异构ODPA和TDPA系列与不同二胺和封端剂合成的PMR型热固性聚酰亚胺流变性质规律不尽相同。异构ODPA/MDA/NA的PMR树脂中3，3'-位树脂熔融粘度谷底数值较高加工窗口较窄。异构ODR入／ODA/NA的PMR树脂中三者熔融粘度谷底相同，均在SPa·s左右，3，3'-位和3，4'-位树脂的加工窗口几乎重合，4，4'-位树脂加工窗口随不同次制样的结晶性不同而有所变化。同异构ODPA/ODA/NA的PMR树脂相比，异构TDPA／ODA/NA系列的熔融粘度谷底数值稍高（10～14Pa·s之间），但也彼此相同，无异构体间的差别，3，4'-位和4，4，一位树脂加工窗口均较宽且4，4'-位树脂无明显结晶出现，3，3'-位窗日最窄。异构TDPA/ODA/PEPA的PMR树脂熔融粘度谷底比NA封端的低，降到2-4Pa·s左右，且加工窗口大大加宽，异构体之间差别不大，熔融粘度谷底数值比4，4'-ODPA/ODA/PEPA树脂低，窗口也宽。以3，4’-ODA取代4，4'-ODA后，由4，4'-TD队、3，4'-TD队、3，4'-ODPA和4，4’-OD队合成的PE以封端PMR树脂均拥有1 Pa·s左右的熔体粘度谷底。4，4'-ODPA／3，4'-ODA／PEPA结晶性较强，加工窗口在290℃以上，其他三种树脂的加工窗口都可扩宽到270～350℃，可望适合用RrM工艺加工高性能的复合材料。总体看来，异构ODPA和TDPA系歹lJ的PMR树脂中，由4，4'-ODPA合成的树脂有较强的结晶性，由3，3'-位二配合成的树脂熔体粘度和加工窗口多有变化，但由4，4'-TDPA和3，4'-位二酐合成的不同种类树脂和其异构体相比均具有较低的熔体粘度谷底和较宽的加工窗口，可见异构TDPA系列的热固性聚酰亚胺熔融加工性比异构ODPA系列好。

ELECTRONIC SPECTROSCOPY STUDIES OF A P2S5NH4OH TREATED GAS(100) SURFACE

Microscopic characteristics of the GaAs(100) surface treated with P2S5/NH4OH solution has been investigated by using Auger-electron spectroscopy (AES) and x-ray photoemission spectroscopy (XPS). AES reveals that only phosphorus and sulfur, but not oxygen, are contained in the interface between passivation film and GaAs substrate. Using XPS it is found that both Ga2O3 and As2O3 are removed from the GaAs surface by the P2S5/NH4OH treatment; instead, gallium sulfide and arsenic sulfide are formed. The passivation film results in a reduction of the density of states of the surface electrons and an improvement of the electronic and optical properties of the GaAs surface.