996 resultados para anodic alumina films
Resumo:
Micro anchor is a kind of typical structures in micro/nano electromechanical systems (MEMS/NEMS), and it can be made by anodic bonding process, with thin films of metal or alloy as an intermediate layer. At the relative low temperature and voltage, specimens with actually sized micro anchor structures were anodically bonded using Pyrex 7740 glass and patterned crystalline silicon chips coated with aluminum thin film with a thickness comprised between 50 nm and 230 nm. To evaluate the bonding quality, tensile pulling tests have been finished with newly designed flexible fixtures for these specimens. The experimental results exhibit that the bonding tensile strength increases with the bonding temperature and voltage, but it decreases with the increase of the thickness of Al intermediate layer. This kind of thickness effect of the intermediate layer was not mentioned in the literature on anodic bonding. (C) 2008 Elsevier Ltd. All rights reserved.
Resumo:
Thickness and component distributions of large-area thin films are an issue of international concern in the field of material processing. The present work employs experiments and direct simulation Monte Carlo (DSMC) method to investigate three-dimensional low-density, non-equilibrium jets of yttrium and titanium vapor atoms in an electron-beams physical vapor deposition (EBPVD) system furnished with two or three electron-beams, and obtains their deposition thickness and component distributions onto 4-inch and 6-inch mono-crystal silicon wafers. The DSMC results are found in excellent agreement with our measurements, such as evaporation rates of yttrium and titanium measured in-situ by quartz crystal resonators, deposited film thickness distribution measured by Rutherford backscattering spectrometer (RBS) and surface profilometer and deposited film molar ratio distribution measured by RBS and inductively coupled plasma atomic emission spectrometer (ICP-AES). This can be taken as an indication that a combination of DSMC method with elaborate measurements may be satisfactory for predicting and designing accurately the transport process of EBPVD at the atomic level.
Resumo:
Resumen: Los materiales plásticos utilizados en la industria del embalaje y transporte de mercaderías familiares e industriales, presentan numerosas ventajas que los han puesto en su lugar durante los últimos 50 años. En la actualidad, son miles de millones de toneladas anuales de bolsas o embalajes de polietileno, las que diariamente se producen, se usan, se recuperan (en muy pequeña parte) y son finalmente dispuestas, quemadas o literalmente arrojadas al medio ambiente. La alta estabilidad química o la muy baja tasa de degradación, hace que estos residuos perduren en el medio - en la mayoría de los casos por más de 100 años- dependiendo las condiciones ambientales locales. Hace pocos años, se adaptaron conocimientos científicos a esta problemática, y de ello nacieron dos formas de atacar la eliminación del plástico como desecho (más allá del reciclado y uso racional): por un lado, la utilización de bioplásticos con propiedades biodegradables; y por otro, el agregado de aditivos pro-degradantes a plásticos convencionales. El presente trabajo, tiene por objeto tomar a esta última herramienta, sobre la cual se han comenzado a estudiar los mecanismos químicos por los cuales cumplen su función, evaluándolos en distintas condiciones aceleradas de laboratorio. De esta manera, se caracterizaron velocidades de degradación abiótica mediante envejecimientos acelerados con radiación ultravioleta y térmica, para films de polietileno aditivados con un compuesto oxodegradante comercial. Se estudiaron distintas concentraciones de aditivo en el polímero, en función del tiempo de envejecimiento. Las caracterizaciones incluyeron análisis mecánico, análisis térmico diferencial, espectroscopía de absorción infrarroja y de Absorción Atómica.
Resumo:
Two types of peeling experiments are performed in the present research. One is for the Al film/Al2O3 substrate system with an adhesive layer between the film and the substrate. The other one is for the Cu film/Al2O3 substrate system without adhesive layer between the film and the substrate, and the Cu films are electroplated onto the Al2O3 substrates. For the case with adhesive layer, two kinds of adhesives are selected, which are all the mixtures of epoxy and polyimide with mass ratios 1:1.5 and 1:1, respectively. The relationships between energy release rate, the film thickness and the adhesive layer thickness are measured during the steady-state peeling process. The effects of the adhesive layer on the energy release rate are analyzed. Using the experimental results, several analytical criteria for the steady-state peeling based on the bending model and on the two-dimensional finite element analysis model are critically assessed. Through assessment of analytical models, we find that the cohesive zone criterion based on the beam bend model is suitable for a weak interface strength case and it describes a macroscale fracture process zone case, while the two-dimensional finite element model is effective to both the strong interface and weak interface, and it describes a small-scale fracture process zone case. (C) 2007 Elsevier Ltd. All rights reserved.
Resumo:
Cobalt-doped ZnO (Zn1-xCoxO) thin films were fabricated by reactive magnetron cosputtering. The processing conditions were carefully designed to avoid the occurrence of Co precipitations. The films are c-axis oriented, and the solubility limit of Co in ZnO is less than 17%, determined by x-ray diffraction. X-ray photoemission spectroscopy measurements show Co ions have a chemical valance of 2+. In this paper, hysteresis loops were clearly observed for Zn1-xCoxO films at room temperature. The coercive field, as well as saturation magnetization per Co atom, decreases with increasing Co content, within the range of 0.07
Resumo:
Laser-induced well-ordered and controllable wavy patterns are constructed in the deposited metal thin film. The micrometer-sized structure and orientation of the wavy patterns can be controlled via scanning a different size of rectangle laser spot on the films. Ordered patterns such as aligned, crossed, and whirled wave structures were designed over large areas. This patterning technique may find applications in both exploring the reliability and mechanical properties of thin films, and fabricating microfluidic devices. (C) 2004 American Institute of Physics.
Resumo:
Nanoindentation tests were carried out to investigate certain elastic properties of Al2O3/SiCp composites at microscopic scales (nm up to mu m) and under ultra-low loads from 3 mN to 250 mN, with special attention paid to effects caused by SiC particles and pores. The measured Young's modulus depends on the volume fraction of SiC particles and on the composite porosity and it can compare with that of alumina. The Young's modulus exhibits large scatters at small penetrations, but it tends to be constant with lesser dispersion as the indentation depth increases. Further analysis indicated that the scatter results from specific microstructural heterogeneities. The measured Young's moduli are in agreement with predictions, provided the actual role of the microstructure is taken into account. (C) 2007 Elsevier Ltd. All rights reserved.
Resumo:
We report the direct synthesis of strong, highly conducting, and transparent single-walled carbon nanotube (SWNT) films. Systematically, tests reveal that the directly synthesized films have superior electrical and mechanical properties compared with the films made from a solution-based filtration process: the electrical conductivity is over 2000 S/cm and the strength can reach 360 MPa. These values are both enhanced by more than 1 order. We attribute these intriguing properties to the good and long interbundle connections. Moreover, by the help of an extrapolated Weibull theory, we verify the feasibility of reducing the interbundle slip by utilizing the long-range intertube friction and estimate the ultimate strength of macroscale SWNTs without binding agent.
Resumo:
The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs0.3Sb0.7 films with InAs0.9Sb0.09 buffer layers have been successfully obtained. The low X-ray rocking curve FHWM values of InAs0.3Sb0.7 layer shows the high quality of crystal-orientation structure. Hall measurements show that the highest electron mobility in the samples obtained is 2.9 x 10(4) cm(2) V-1 s(-1) and the carrier density is 2.78 x 10(16)cm(-3) at room temperature (RT). The In As0.3Sb0.7 films grown on (10 0) GaSb substrates exhibit excellent optical performance with a cut-off wavelength of 12 mu m. (c) 2007 Elsevier B.V. All rights reserved.