`A Study on Ultra L-topologies and Lattices of L-topologies'

The thesis is divided into nine chapters including introduction. Mainly we determine ultra L-topologies in the lattice of L- topologies and study their properties. We nd some sublattices in the lattice of L-topologies and study their properties. Also we study the lattice structure of the set of all L-closure operators on a set X.

Development of p-type transparent semiconducting oxides for thin film transistor applications

Semiconductor physics has developed significantly in the field of re- search and industry in the past few decades due to it’s numerous practical applications. One of the relevant fields of current interest in material science is the fundamental aspects and applications of semi- conducting transparent thin films. Transparent conductors show the properties of transparency and conductivity simultaneously. As far as the band structure is concerned, the combination of the these two properties in the same material is contradictory. Generally a trans- parent material is an insulator having completely filled valence and empty conduction bands. Metallic conductivity come out when the Fermi level lies within a band with a large density of states to provide high carrier concentration. Effective transparent conductors must nec- essarily represent a compromise between a better transmission within the visible spectral range and a controlled but useful electrical con- ductivity [1–6]. Generally oxides like In2O3, SnO2, ZnO, CdO etc, show such a combination. These materials without any doping are insulators with optical band gap of about 3 eV. To become a trans- parent conductor, these materials must be degenerately doped to lift the Fermi level up into the conduction band. Degenerate doping pro- vides high mobility of extra carriers and low optical absorption. The increase in conductivity involves an increase in either carrier concen- tration or mobility. Increase in carrier concentration will enhance the absorption in the visible region while increase in mobility has no re- verse effect on optical properties. Therefore the focus of research for new transparent conducting oxide (TCO) materials is on developing materials with higher carrier mobilities.

A compact CPW fed slot antenna for ultra wide band applications

A printed compact coplanar waveguide fed triangular slot antenna for ultra wide band (UWB) communication systems is presented. The antenna comprises of a triangular slot loaded ground plane with a T shaped strip radiator to enhance the bandwidth and radiation. This compact antenna has a dimension of 26mm×26mm when printed on a substrate of dielectric constant 4.4 and thickness 1.6mm. Design equations are implemented and validated for different substrates. The pulse distortion is insignificant and is verified by the measured antenna performance with high signal fidelity and virtually steady group delay. The simulation and experiment reveal that the proposed antenna exhibits good impedance match, stable radiation patterns and constant gain and group delay over the entire operating band

High Selectivity Filter Employing Stepped Impedance Resonators, Series Capacitors and Defected Ground Structures for Ultra Wide Band Applications

The paper presents a compact planar Ultra Wide Band ¯lter employing folded stepped impedance resonators with series capacitors and dumb bell shaped defected ground structures. An interdigital quarter wavelength coupled line is used for achieving the band pass characteristics. The transmission zeros are produced by stepped impedance resonators. The ¯lter has steep roll o® rate and good attenuation in its lower and upper stop bands, contributed by the series capacitor and defected ground structures respectively.

Folded SIR with CSRRs for Ultra Wide Band Applications

The paper presents a maximally flat compact planar filter employing folded Stepped Impedance Resonators (SIR) and Complementary Split Ring Resonators (CSRR), for Ultra Wide Band (UWB) applications. An interdigital quarter wavelength coupled line is used for achieving the band pass characteristics. The filter has low insertion loss in its pass band and steep roll off rate and good attenuation in its lower and upper stop bands. The measured microwave characteristics of the fabricated filter show good agreement with the simulated response

On the magnetic properties of ultra-Þne zinc ferrites

Zinc ferrite belongs to the class of normal spinels where it is assumed to have a cation distribution of Zn2`(Fe3`)2(O2~)4, and it is purported to be showing zero net magnetisation. However, there have been recent reports suggesting that zinc ferrite exhibits anomaly in its magnetisation. Zinc ferrite samples have been prepared by two di¤erent routes and have been analysed using low energy ion scattering, Mo¬ ssbauer spectroscopy and magnetic measurements. The results indicate that zinc occupies octahedral sites, contrary to the earlier belief that zinc occupies only the tetrahedral sites in a normal spinel. The amount of zinc on the B site increases with decrease in particle size. The LEIS results together with the Mo¬ ssbauer results and the magnetic measurements lead to the conclusion that zinc occupies the B site and the magnetisation exhibited by ultraÞne particles of zinc is due to short range ordering

Characterization of low dielectric constant polyaniline thin film synthesized by ac plasma polymerization technique

Polyaniline thin films were prepared by ac plasma polymerization technique. Capacitance, dielectric loss, dielectric constant and ac conductivity of these films were investigated in the frequency range from 100 Hz to 1MHz and in the temperature range from 300 to 373 K. Capacitance and dielectric loss decreased with frequency and increased with temperature. This type of behaviour was found to be in good agreement with an existing model. The ac conductivity σ(ω) was found to vary as ωs with the index s 1. Annealing of polyaniline thin films in high vacuum at 373K for 1 h was found to reduce the dielectric loss. FTIR studies reveal that the aromatic ring is retained in the polyaniline thin films, which enhances the thermal stability of the polymer films

On the optical and electrical properties of rf and a.c. plasma polymerized aniline thin films

Polyaniline is a widely studied conducting polymer and is a useful material in its bulk and thin film form for many applications, because of its excellent optical and electrical properties. Pristine and iodine doped polyaniline thin films were prepared by a.c. and rf plasma polymerization techniques separately for the comparison of their optical and electrical properties. Doping of iodine was effected in situ. The structural properties of these films were evaluated by FTIR spectroscopy and the optical band gap was estimated from UV-vis-NIR measurements. Comparative studies on the structural, optical and electrical properties of a.c. and rf polymerization are presented here. It has been found that the optical band gap of the polyaniline thin films prepared by rf and a.c. plasma polymerization techniques differ considerably and the band gap is further reduced by in situ doping of iodine. The electrical conductivity measurements on these films show a higher value of electrical conductivity in the case of rf plasma polymerized thin films when compared to the a.c. plasma polymerized films. Also, it is found that the iodine doping enhanced conductivity of the polymer thin films considerably. The results are compared and correlated and have been explained with respect to the different structures adopted under these two preparation techniques

Low k thin films based on rf plasma-polymerized aniline

Thermally stable materials with low dielectric constant (k < 3.9) are being hotly pursued. They are essential as interlayer dielectrics/intermetal dielectrics in integrated circuit technology, which reduces parasitic capacitance and decreases the RC time constant. Most of the currently employed materials are based on silicon. Low k films based on organic polymers are supposed to be a viable alternative as they are easily processable and can be synthesized with simpler techniques. It is known that the employment of ac/rf plasma polymerization yields good quality organic thin films, which are homogenous, pinhole free and thermally stable. These polymer thin films are potential candidates for fabricating Schottky devices, storage batteries, LEDs, sensors, super capacitors and for EMI shielding. Recently, great efforts have been made in finding alternative methods to prepare low dielectric constant thin films in place of silicon-based materials. Polyaniline thin films were prepared by employing an rf plasma polymerization technique. Capacitance, dielectric loss, dielectric constant and ac conductivity were evaluated in the frequency range 100 Hz– 1 MHz. Capacitance and dielectric loss decrease with increase of frequency and increase with increase of temperature. This type of behaviour was found to be in good agreement with an existing model. The ac conductivity was calculated from the observed dielectric constant and is explained based on the Austin–Mott model for hopping conduction. These films exhibit low dielectric constant values, which are stable over a wide range of frequencies and are probable candidates for low k applications.

Studies on the optical band gap and cluster size of the polyaniline thin films irradiated with swift heavy Si ions

Polyaniline thin films prepared by RF plasma polymerisation were irradiated with 92MeV Si ions for various fluences of 1 1011, 1 1012 and 1 1013 ions/cm2. FTIR and UV–vis–NIR measurements were carried out on the pristine and Si ion irradiated polyaniline thin films for structural evaluation and optical band gap determination. The effect of swift heavy ions on the structural and optical properties of plasma-polymerised aniline thin film is investigated. Their properties are compared with that of the pristine sample. The FTIR spectrum indicates that the structure of the irradiated sample is altered. The optical studies show that the band gap of irradiated thin film has been considerably modified. This has been attributed to the rearrangement in the ring structure and the formation of CRC terminals. This results in extended conjugated structure causing reduction in optical band gap

Conduction mechanism in plasma polymerized aniline thin films

Electrical properties of ac plasma polymerized aniline thin films are investigated with a view of determining the dominant conduction mechanism. The current–voltage (I–V) characteristics in symmetric and asymmetric electrode configuration for polyaniline thin films in the thickness range from 1300 to 2000 A ° are investigated. From the studies on asymmetric electrode configuration, it is found that the dominant conduction mechanism in these films is of Schottky type

Microstructure and random magnetic anisotropy in Fe–Ni based nanocrystalline thin films

Nanocrystalline Fe–Ni thin films were prepared by partial crystallization of vapour deposited amorphous precursors. The microstructure was controlled by annealing the films at different temperatures. X-ray diffraction, transmission electron microscopy and energy dispersive x-ray spectroscopy investigations showed that the nanocrystalline phase was that of Fe–Ni. Grain growth was observed with an increase in the annealing temperature. X-ray photoelectron spectroscopy observations showed the presence of a native oxide layer on the surface of the films. Scanning tunnelling microscopy investigations support the biphasic nature of the nanocrystalline microstructure that consists of a crystalline phase along with an amorphous phase. Magnetic studies using a vibrating sample magnetometer show that coercivity has a strong dependence on grain size. This is attributed to the random magnetic anisotropy characteristic of the system. The observed coercivity dependence on the grain size is explained using a modified random anisotropy model

Swift heavy ion induced surface modification for tailoring coercivity in Fe–Ni based amorphous thin films

Fe–Ni based amorphous thin films were prepared by thermal evaporation. These films were irradiated by 108 MeV Ag8+ ions at room temperature with fluences ranging from 1 1012 to 3 1013 ions/cm2 using a 15 UD Pelletron accelerator. Glancing angle x-ray diffraction studies showed that the irradiated films retain their amorphous nature. The topographical evolution of the films under swift heavy ion SHI bombardment was probed using atomic force microscope and it was noticed that surface roughening was taking place with ion beam irradiation. Magnetic measurements using a vibrating sample magnetometer showed that the coercivity of the films increases with an increase in the ion fluence. The observed coercivity changes are correlated with topographical evolution of the films under SHI irradiation. The ability to modify the magnetic properties via SHI irradiation could be utilized for applications in thin film magnetism

Effect of thermal annealing on Fe40Ni38B18Mo4 thin films: modified Herzer model for magnetic evolution

Magnetic properties of nano-crystalline soft magnetic alloys have usually been correlated to structural evolution with heat treatment. However, literature reports pertaining to the study of nano-crystalline thin films are less abundant. Thin films of Fe40Ni38B18Mo4 were deposited on glass substrates under a high vacuum of ≈ 10−6 Torr by employing resistive heating. They were annealed at various temperatures ranging from 373 to 773K based on differential scanning calorimetric studies carried out on the ribbons. The magnetic characteristics were investigated using vibrating sample magnetometry. Morphological characterizations were carried out using atomic force microscopy (AFM), and magnetic force microscopy (MFM) imaging is used to study the domain characteristics. The variation of magnetic properties with thermal annealing is also investigated. From AFM and MFM images it can be inferred that the crystallization temperature of the as-prepared films are lower than their bulk counterparts. Also there is a progressive evolution of coercivity up to 573 K, which is an indication of the lowering of nano-crystallization temperature in thin films. The variation of coercivity with the structural evolution of the thin films with annealing is discussed and a plausible explanation is provided using the modified random anisotropy model

Determination of charge carrier transport in radio frequency plasma polymerized aniline thin films

The carrier transport mechanism of polyaniline (PA) thin films prepared by radio frequency plasma polymerization is described in this paper. The mechanism of electrical conduction and carrier mobility of PA thin films for different temperatures were examined using the aluminium–PA–aluminium (Al–PA–Al) structure. It is found that the mechanism of carrier transport in these thin films is space charge limited conduction. J –V studies on an asymmetric electrode configuration using indium tin oxide (ITO) as the base electrode and Al as the upper electrode (ITO–PA–Al structure) show a diode-like behaviour with a considerable rectification ratio