High quality microcrystalline Si films by hydrogen dilution profile

Novel hydrogen dilution profiling (HDP) technique was developed to improve the uniformity in the growth direction of mu c-Si:H thin films prepared by hot wire chemical vapor deposition (HWCVD). It was found that the high H dilution ratio reduces the incubation layer from 30 nm to less than 10 nm. A proper design of hydrogen dilution profiling improves the uniformity of crystalline content, X-c, in the growth direction and restrains the formation of micro-voids as well. As a result the compactness of mu c-Si:H films with a high crystalline content is enhanced and the stability of mu c-Si:H thin film against the oxygen diffusion is much improved. Meanwhile the HDP mu c-Si:H films exhibit the low defect states. The high nucleation density from high hydrogen dilution at early stage is a critical parameter to improve the quality of mu c-Si:H films. (c) 2006 Published by Elsevier B.V.

(Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam depositionw

The (Ga,Mn,As) compounds were obtained by the implantation of Mn ions into semi-insulating GaAs substrate with mass-analyzed low energy dual ion beam deposition technique. Auger electron spectroscopy depth profile of a typical sample grown at the substrate temperature of 250degreesC showed that the Mn ions were successfully implanted into GaAs substrate with the implantation depth of 160 nm. X-ray diffraction was employed for the structural analyses of all samples. The experimental results were greatly affected by the substrate temperature. Ga5.2Mn was obtained in the sample grown at the substrate temperature of 250degreesC. Ga5.2Mn, Ga5Mn8 and Mn3Ga were obtained in the sample grown at the substrate temperature of 400degreesC. However, there is no new phase in the sample grown at the substrate temperature of 200degreesC. The sample grown at 400degreesC was annealed at 840degreesC. In this annealed sample Mn3Ga disappeared, Ga5Mn8 tended to disappear,Ga5.2Mn crystallized better and a new phase of Mn2As was generated. (C) 2002 Elsevier Science B,V. All rights reserved.

Identification of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy

An anomalous behavior was observed in X-ray photoelectron Spectroscopy (XPS) depth profile measurements conducted on CeO2/Si epilayers grown by ion beam epitaxy (IBE): the signals of Ce3+ and Ce4+ co-exist, and the ratio between them increases during the etching time and then tends to maintain a constant level before increasing again. The results of X-ray Diffraction (XRD), Auger Electron Spectroscopy (AES), and Rutherford Back-Scattering (RES) measurements proved that the reduction chemical reaction of CeO2 is induced by ion-etching. (C) 1998 Elsevier Science Ltd. All rights reserved.

Mechanism of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy

In a search for the mechanism of the induced reduction reaction that occurred in X-ray photoelectron Spectroscopy (XPS) depth profiles measured experimentally on CeO2/Si epilayers grown by ion beam epitaxy (IBE), several possibilities have been checked. The first possibility, that the X-ray induces the reaction, has been ruled out by experimentation. Other possible models for the incident-ion induced reaction, one based on short-range interaction (direct collision) and the other based on long-range potential accompanied with the incident-ions, have been tested by simulation on computer. The results proved that the main mechanism is the former, not the latter. (C) 1998 Elsevier Science Ltd. All rights reserved.

High quality microcrystalline Si films by hydrogen dilution profile

Novel hydrogen dilution profiling (HDP) technique was developed to improve the uniformity in the growth direction of mu c-Si:H thin films prepared by hot wire chemical vapor deposition (HWCVD). It was found that the high H dilution ratio reduces the incubation layer from 30 nm to less than 10 nm. A proper design of hydrogen dilution profiling improves the uniformity of crystalline content, X-c, in the growth direction and restrains the formation of micro-voids as well. As a result the compactness of mu c-Si:H films with a high crystalline content is enhanced and the stability of mu c-Si:H thin film against the oxygen diffusion is much improved. Meanwhile the HDP mu c-Si:H films exhibit the low defect states. The high nucleation density from high hydrogen dilution at early stage is a critical parameter to improve the quality of mu c-Si:H films. (c) 2006 Published by Elsevier B.V.

Control of the photonic crystal waveguide over the beam profile of vertical-cavity surface-emitting lasers

The control of the photonic crystal waveguide over the beam profile of vertical-cavity surface-emitting lasers is investigated. The symmetric slab waveguide model is adopted to analyze the control parameters, of the beam profile in the photonic-crystal vertical-cavity surface-emitting laser (PC-VCSEL). The filling factor (the ratio of the hole diameter to the lattice constant) and the etching depth control the divergence angle of the PC-VCSEL, and the low filling factor and the shallow etching depth are beneficial to achieve the low-divergence-angle beam. Two types of PC-VCSELs with different filling factors and etching depths are designed and fabricated. The experimental results show that the device with a lower filling factor and a shallower etching depth has a lower divergence angle, which agrees well with the theoretical predictions.

黄土高原沟壑区果园还耕对土壤水分的影响

在黄土高原沟壑区王东沟小流域,在塬面、梁地和坡地三种地貌类型上,分别选取了盛果期果园、老果园和退耕还田等3种土地利用与管理方式,测定土壤0~400 cm(塬面0~600 cm)水分含量分布,研究果园的利用管理方式变化对土壤剖面中水分含量变化的影响。结果表明,梁地和坡地上,盛果期果园、老果园土壤水分含量均接近作物凋萎湿度(10%);塬面上,盛果期果园、老果园土壤水分含量为15%。退果4年的耕地、坡地0~400 cm土层土壤储水量显著增加,梁地和塬面虽有增加但与老果园相比,剖面储水量并没有达到显著水平;退果4年耕地、坡地和梁地剖面中的60~140 cm和220~400 cm含水量提高最显著,塬面上220~600 cm土层中水分提高显著。

半干旱区施氮和灌溉条件下覆膜对春玉米产量及氮素平衡的影响

以典型半干旱区干湿砂质新成土(Ust-Sandic Entisols)为供试土壤进行田间试验,研究地膜覆盖、施氮及补充灌水量对春玉米(Zea maysL.)产量、土壤矿质氮(NO3--N和NH4+-N)及氮素平衡的影响。结果表明,0—100 cm土体范围内,随着土层加深,播前和收获后土壤NO3--N含量呈降低趋势,NH4+-N有所增加,但变幅不大;总矿质氮量(NO3--N和NH4+-N)表现为下降。说明地膜覆盖和施氮并没有使NO3--N深层累积量增加,这可能与土壤本身供氮能力严重不足有关。与不施氮相比,施氮各处理氮肥表观损失量增加;与不覆膜相比,作物氮素累积量比不覆膜显著增加(P<0.05)。在低灌(80 mm)覆膜和高灌(160 mm)覆膜条件下,玉米的氮肥利用率均比不覆膜提高了18.8%,说明覆膜低灌在相同施氮条件下,可节约80 mm灌水。但低灌(80 mm)与高灌(160 mm)不覆膜间氮肥利用率差异不显著,表明在相同施氮条件下,覆膜可有效提高氮肥利用率,减少氮素损失。综合考虑子粒产量和氮肥利用率,"覆膜+补灌80 mm+施氮90 kg/hm2"可能为本试验条件下较优的栽培模式。

Carrier Depth Profile of Si/SiGe/Si n-p-n HBTStructural Materials Characterized by Electrochemical Capacitance- Voltage Method

于2010-11-23批量导入

松辽平原农田土壤碳氮磷分布特征研究

本文对东北地区松辽平原不同纬度农田土壤碳氮磷剖面分布特征进行比较研究，从北到南依次采集了黑土区的海伦、哈尔滨、德惠、公主岭和棕壤区的昌图、沈阳、大石桥玉米地土壤样品。所得主要结论如下： 各样点土壤有机碳含量随土层深度的增加而下降。海伦、哈尔滨和公主岭样点40～60cm土层土壤有机碳含量及其储量显著低于0～40cm土层；海伦、哈尔滨、德惠、公主岭和昌图样点土壤水溶性有机碳表现出随深度增加先升高后降低，在沈阳和大石桥样点土壤水溶性有机碳表现出随深度而下降的趋势；各样点0～20cm土层土壤微生物量碳含量高于20～40cm土层。典型黑土区海伦点0～100cm的SOC储量为213.4t•hm-2, 棕壤区昌图、沈阳、大石桥样点分别为69.9、87.9和73.4t•hm-2，海伦点SOC储量是棕壤区三样点的3倍左右。 土壤全氮、碱解氮、硝态氮及氮储量随剖面深度增加而下降。德惠点在20～40cm土层、沈阳点在40～60cm土层、昌图点在60～80cm土层的全磷含量最低；其他样点土壤全磷、有机磷含量和磷储量总体上呈现随土层深度增加而下降的趋势。黑土区样点土壤有机磷含量在40cm以下各土层迅速下降，而棕壤区各样点20cm以下各土层差异不显著。除公主岭和大石桥点外, 其他各样点土壤Olsen-P含量在0～20cm 土层显著高于20～40cm土层。 土壤有机碳、全氮、碱解氮、全磷和有机磷含量随纬度增加而增加。营养元素在纬度上的分异主要受成土母质、气候条件等自然因素影响，施肥、耕作等人为活动对表层土壤营养元素分布的影响较大。除土壤水溶性有机碳外，土壤碳、氮和磷之间及其与其他基本理化性质间均存在显著的相关关系。