镀铬/高能束复合表面处理研究进展

根据高能束对镀铬涂层及其界面强化机制的不同,镀铬/高能束表面复合技术可分为两类:高能束强化镀铬涂层复合技术和高能束预处理基体/镀铬复合技术.前者典型代表有激光表面强化或等离子体氮化/镀铬涂层;后者主要代表是激光预淬火基体/镀铬复合表面处理.综合阐述了上述3种典型的复合处理技术的原理、目的及实际综合效果;通过试验初步探讨了激光预淬火基体/镀铬复合技术延长镀铬身管寿命的主要机理.

Vertical transport and exchange of materials in the upper waters of the oceans (VERTEX): introduction to the program, hydrographic conditions and major component fluxes during VERTEX I

This paper introduces VERTEX, a multi-disciplinary research program dealing with various aspects of particle transport in the upper, high-energy layers (0-2000 m) of the ocean. Background information is presented on hydrography, biological composition of trapped particulates, and major component fluxes observed on a cruise off central California (VERTEX I). Organic C fluxes measured with two trap systems are compared with several other estimates taken from the literature. The intent of this overview paper is to provide a common setting in an economical manner, and avoid undue repetition of background and ancillary information in subsequent publications. (PDF is 43 pages).

Some aspects of the ecology of the leatherback turtle Dermochelys coriacea at Laguna Jalova, Costa Rica

The ecology and reproductive biology of the leatherback turtle (Dennochelys coriacea) was studied on a high-energy nesting beach near Laguna Jalova, Costa Rica, between 28 March and 8 June 1985. The peak of nesting was between 15 April and 21 May. Leatherbacks here measured an average 146.6 cm straightline standard carapace length and laid an average 81.57 eggs. The eggs measured a mean 52.12 mm diameter and weighed an average of 85.01 g. Significant positive relationships were found between the carapace lengths of nesters and their clutch sizes and average diameter and weight of eggs. The total clutch weighed between 4.02 and 13.39 kg, and yolkless eggs accounted for an average 12.4% of this weight. The majority of nesters dug shallow (<24 cm) body pits and spent an average 81 minutes at the nest site. A significant number of c1utcbes were laid below the berm crest. In a hatchery 42.2% of the eggs hatched, while in natural nests 70.2% hatched. The average hatchling carapace length was 59.8 mm and weight was 44.6 g. The longevity of leatherback tracks and nests on the beach was affected by weather. One nester was recaptured about one year later off the coast of Mississippi, U.S.A. Egg poaching was intense on some sections of the Costa Rican coast. Four aerial surveys in four different months provided the basis for comparing density of nesting on seven sectors of the Caribbean coast of Costa Rica. The beach at Jalova is heavily used by green turtles (Chelonia mydJJs) after the leatherback nesting season. The role of the Parque Nacional Tortuguero in conserving the leatherback and green turtle is discussed.(PDF file contains 20 pages.)

低渗油田“层内爆炸”增产技术的小尺度模拟实验研究

本文是关于低渗油田增产技术的室内模拟实验研究的论文。我们对井内爆炸采油、核爆采油和高能气体压裂进行全面调研以后，吸取了井内爆炸采油的教训，借鉴了高能气体压裂的成功经验，提出了低渗油田“层内爆炸”增产技术。该技术是利用水力压裂技术的现有设备，将适当的炸药压入岩石裂缝，再用适当的方法起爆，从而在岩石裂缝周围产生大量裂缝，在不会对储层产生不利影响也不会毁坏井筒的前提下，达到提高采取收率并增产油气的目的。首先，建立了圆管点火实验装置、小尺度模拟实验装置和平板点火实验装置；然后利用实验装置进行了“层内爆炸”用特种火药和特种炸药配方的探索。通过实验我们至少找到了一种“层内爆炸”用药品的配方，并且在小尺度模拟实验装置中实现了“层内爆炸”基本过程的模拟实验，从而证实“层内爆炸”思路正确，原理上可行。接着，建立了爆燃推进的模型，并在恒稳推进和不可压缩简化条件下得到几组算例，这些解在物理上是合理的。通过计算我们得知爆燃恒温推进的条件是苛刻的，需要多个参数的匹配。通过本人硕士论文的工作，证实了低渗油田“层内爆炸”增产技术在原理上的可行性。但因为“层内爆炸”过程中牵涉到多个特征尺度，因此并不能从小尺度向大尺度简单地推广，下一步工作是建立中大尺度模拟实验装置，考察在中大尺度条件下“层内爆炸”的可行性，为现场实际应用作充分的实验准备。

Nucleon structure functions from ν_µ-Fe interactions and a study of the valence quark distribution

Data were taken in 1979-80 by the CCFRR high energy neutrino experiment at Fermilab. A total of 150,000 neutrino and 23,000 antineutrino charged current events in the approximate energy range 25 < E_v < 250GeV are measured and analyzed. The structure functions F2 and xF_3 are extracted for three assumptions about σ_L/σ_T:R=0., R=0.1 and R= a QCD based expression. Systematic errors are estimated and their significance is discussed. Comparisons or the X and Q^2 behaviour or the structure functions with results from other experiments are made.

We find that statistical errors currently dominate our knowledge of the valence quark distribution, which is studied in this thesis. xF_3 from different experiments has, within errors and apart from level differences, the same dependence on x and Q^2, except for the HPWF results. The CDHS F_2 shows a clear fall-off at low-x from the CCFRR and EMC results, again apart from level differences which are calculable from cross-sections.

The result for the the GLS rule is found to be 2.83±.15±.09±.10 where the first error is statistical, the second is an overall level error and the third covers the rest of the systematic errors. QCD studies of xF_3 to leading and second order have been done. The QCD evolution of xF_3, which is independent of R and the strange sea, does not depend on the gluon distribution and fits yield

ʌ_(LO) = 88^(+163)_(-78) ^(+113)_(-70) MeV

The systematic errors are smaller than the statistical errors. Second order fits give somewhat different values of ʌ, although α_s (at Q^2_0 = 12.6 GeV^2) is not so different.

A fit using the better determined F_2 in place of xF_3 for x > 0.4 i.e., assuming q = 0 in that region, gives

ʌ_(LO) = 266^(+114)_(-104) ^(+85)_(-79) MeV

Again, the statistical errors are larger than the systematic errors. An attempt to measure R was made and the measurements are described. Utilizing the inequality q(x)≥0 we find that in the region x > .4 R is less than 0.55 at the 90% confidence level.

Growth and characterization of novel, III-V semiconductor heterostructures

The material presented in this thesis concerns the growth and characterization of III-V semiconductor heterostructures. Studies of the interactions between bound states in coupled quantum wells and between well and barrier bound states in AlAs/GaAs heterostructures are presented. We also demonstrate the broad array of novel tunnel structures realizable in the InAs/GaSb/AlSb material system. Because of the unique broken-gap band alignment of InAs/GaSb these structures involve transport between the conduction- and valence-bands of adjacent layers. These devices possess a wide range of electrical properties and are fundamentally different from conventional AlAs/GaAs tunnel devices. We report on the fabrication of a novel tunnel transistor with the largest reported room temperature current gains. We also present time-resolved studies of the growth fronts of InAs/GainSb strained layer superlattices and investigations of surface anion exchange reactions.

Chapter 2 covers tunneling studies of conventional AlAs/GaAs RTD's. The results of two studies are presented: (i) A test of coherent vs. sequential tunneling in triple barrier heterostructures, (ii) An optical measurement of the effect of barrier X-point states on Γ-point well states. In the first it was found if two quantum wells are separated by a sufficiently thin barrier, then the eigenstates of the system extend coherently across both wells and the central barriers. For thicker barriers between the wells, the electrons become localized in the individual wells and transport is best described by the electrons hopping between the wells. In the second, it was found that Γ-point well states and X-point barrier states interact strongly. The barrier X-point states modify the energies of the well states and increase the escape rate for carriers in the quantum well.

The results of several experimental studies of a novel class of tunnel devices realized in the InAs/GaSb/AlSb material system are presented in Chapter 3. These interband tunnel structures involve transport between conduction- and valence-band states in adjacent material layers. These devices are compared and contrasted with the conventional AlAs/GaAs structures discussed in Chapter 2 and experimental results are presented for both resonant and nonresonant devices. These results are compared with theoretical simulations and necessary extensions to the theoretical models are discussed.

In chapter 4 experimental results from a novel tunnel transistor are reported. The measured current gains in this transistor exceed 100 at room temperature. This is the highest reported gain at room temperature for any tunnel transistor. The device is analyzed and the current conduction and gain mechanisms are discussed.

Chapters 5 and 6 are studies of the growth of structures involving layers with different anions. Chapter 5 covers the growth of InAs/GainSb superlattices for far infrared detectors and time resolved, in-situ studies of their growth fronts. It was found that the bandgap of superlattices with identical layer thicknesses and compositions varied by as much as 40 meV depending on how their internal interfaces are formed. The absorption lengths in superlattices with identical bandgaps but whose interfaces were formed in different ways varied by as much as a factor of two. First the superlattice is discussed including an explanation of the device and the complications involved in its growth. The experimental technique of reflection high energy electron diffraction (RHEED) is reviewed, and the results of RHEED studies of the growth of these complicated structures are presented. The development of a time resolved, in-situ characterization of the internal interfaces of these superlattices is described. Chapter 6 describes the result of a detailed study of some of the phenomena described in chapter 5. X-ray photoelectron spectroscopy (XPS) studies of anion exchange reactions on the growth fronts of these superlattices are reported. Concurrent RHEED studies of the same physical systems studied with XPS are presented. Using the RHEED and XPS results, a real-time, indirect measurement of surface exchange reactions was developed.

Interactions of a femtosecond intense laser with rare gas clusters in a dense jet\

A study on the interactions of high intensity (similar to 10(16) W/cm(2)) femtosecond laser pulses with rare gas clusters in a dense jet is performed. Energy absorption by Ar and Xe clusters is measured and it can be as high as 90%. Very energetic ions produced in the laser interaction with a dense cluster jet are detected by time-of-flight spectrometry and the maximum ion energy of Xe is up to 1.3 MeV. The average ion energies are found to increase with increasing cluster size and get saturated gradually. The average ion energies also show a strong directionality and the average ion energy in the direction parallel to the laser polarization vector is 40% higher than that perpendicular to it. The findings are discussed in terms of a model of charge-dependent ion acceleration.

The interplay of localization and interactions in quantum many-body systems

Disorder and interactions both play crucial roles in quantum transport. Decades ago, Mott showed that electron-electron interactions can lead to insulating behavior in materials that conventional band theory predicts to be conducting. Soon thereafter, Anderson demonstrated that disorder can localize a quantum particle through the wave interference phenomenon of Anderson localization. Although interactions and disorder both separately induce insulating behavior, the interplay of these two ingredients is subtle and often leads to surprising behavior at the periphery of our current understanding. Modern experiments probe these phenomena in a variety of contexts (e.g. disordered superconductors, cold atoms, photonic waveguides, etc.); thus, theoretical and numerical advancements are urgently needed. In this thesis, we report progress on understanding two contexts in which the interplay of disorder and interactions is especially important.

The first is the so-called “dirty” or random boson problem. In the past decade, a strong-disorder renormalization group (SDRG) treatment by Altman, Kafri, Polkovnikov, and Refael has raised the possibility of a new unstable fixed point governing the superfluid-insulator transition in the one-dimensional dirty boson problem. This new critical behavior may take over from the weak-disorder criticality of Giamarchi and Schulz when disorder is sufficiently strong. We analytically determine the scaling of the superfluid susceptibility at the strong-disorder fixed point and connect our analysis to recent Monte Carlo simulations by Hrahsheh and Vojta. We then shift our attention to two dimensions and use a numerical implementation of the SDRG to locate the fixed point governing the superfluid-insulator transition there. We identify several universal properties of this transition, which are fully independent of the microscopic features of the disorder.

The second focus of this thesis is the interplay of localization and interactions in systems with high energy density (i.e., far from the usual low energy limit of condensed matter physics). Recent theoretical and numerical work indicates that localization can survive in this regime, provided that interactions are sufficiently weak. Stronger interactions can destroy localization, leading to a so-called many-body localization transition. This dynamical phase transition is relevant to questions of thermalization in isolated quantum systems: it separates a many-body localized phase, in which localization prevents transport and thermalization, from a conducting (“ergodic”) phase in which the usual assumptions of quantum statistical mechanics hold. Here, we present evidence that many-body localization also occurs in quasiperiodic systems that lack true disorder.

高能离子在稠密等离子体中的传输和能量沉积

用相对论福克-普朗克方程对高能离子在稠密氘氚等离子体中的碰撞动力学进行了研究,用球谐函数来展开方程的解：格林函数,然后简明地求出了不同能量质子和α粒子在等离子体中的停止时间、减速距离、纵向弥散距离和横向偏转距离.与以前研究离子在等离子体中运动的方法相比,没有假设高能离子在等离子体中损失能量远远小于入射离子能量,求解了纵向弥散距离;并且可以求解横向偏转距离.这些计算对实验上用高能离子加热冷的稠密等离子体,然后进行科学研究具有指导作用,并且可以用来研究快点火的可能性.

Generation of sub-5 fs pulses through cascade of filamentation and hollow fiber compression

A pulse-compression scheme based on cascade of filamentation and hollow fiber has been demonstrated, Pulses with duration of sub-5 fs and energy of 0.2 mJ near 800 nm have been generated by compressing the similar to 40 fs pulses from a commercial laser system. This method is promising to generate near monocycle high energy pulses. [GRAPHICS] Measured autocorrelation curve of the final compressed pulses with duration of sub-5 fs (black solid) and the simulated autocorrelation curve of 4.6 fs pulse near 800 rim (red dash) (C) 2008 by Astro Ltd. Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA

Further acceleration of MeV electrons by a relativistic laser pulse

With the development of photocathode rf electron gun, electrons with high-brightness and mono-energy can be obtained easily. By numerically solving the relativistic equations of motion of an electron generated from this facility in laser fields modelled by a circular polarized Gaussian laser pulse, we find the electron can obtain high energy gain from the laser pulse. The corresponding acceleration distance for this electron driven by the ascending part of the laser pulse is much longer than the Rayleigh length, and the light amplitude experienced on the electron is very weak when the laser pulse overtakes the electron. The electron is accelerated effectively and the deceleration can be neglected. For intensities around 10(19) W(.)mu m(2)/cm(2), an electron's energy gain near 0.1 GeV can be realized when its initial energy is 4.5 MeV, and the final velocity of the energetic electron is parallel with the propagation axis. The energy gain can be up to 1 GeV if the intensity is about 10(21) W(.)mu m(2)/cm(2). The final energy gain of the electron as a function of its initial conditions and the parameters of the laser beam has also been discussed.

Variable-angle electron spectroscopic studies of various polyatomic molecular systems

The complementary techniques of low-energy, variable-angle electron-impact spectroscopy and ultraviolet variable-angle photoelectron spectroscopy have been used to study the electronic spectroscopy and structure of several series of molecules. Electron-impact studies were performed at incident beam energies between 25 eV and 100 eV and at scattering angles ranging from 0° to 90°. The energy-loss regions from 0 eV to greater than 15 eV were studied. Photoelectron spectroscopic studies were conducted using a HeI radiation source and spectra were measured at scattering angles from 45° to 90°. The molecules studied were chosen because of their spectroscopic, chemical, and structural interest. The operation of a new electron-impact spectrometer with multiple-mode target source capability is described. This spectrometer has been used to investigate the spin-forbidden transitions in a number of molecular systems.

The electron-impact spectroscopy of the six chloro-substituted ethylenes has been studied over the energy-loss region from 0-15 eV. Spin-forbidden excitations corresponding to the π → π*, N → T transition have been observed at excitation energies ranging from 4.13 eV in vinyl chloride to 3.54 eV in tetrachloroethylene. Symmetry-forbidden transitions of the type π → np have been oberved in trans-dichloroethyene and tetrachlor oethylene. In addition, transitions to many states lying above the first ionization potential were observed for the first time. Many of these bands have been assigned to Rydberg series converging to higher ionization potentials. The trends observed in the measured transition energies for the π → π*, N → T, and N → V as well as the π → 3s excitation are discussed and compared to those observed in the methyl- and fluoro- substituted ethylenes.

The electron energy-loss spectra of the group VIb transition metal hexacarbonyls have been studied in the 0 eV to 15 eV region. The differential cross sections were obtained for several features in the 3-7 eV energy-loss region. The symmetry-forbidden nature of the ¹A_1g → ¹A_1g, 2t_2g(π) → 3t_2g(π*) transition in these compounds was confirmed by the high-energy, low-angle behavior of their relative intensities. Several low lying transitions have been assigned to ligand field transitions on the basis of the energy and angular behavior of the differential cross sections for these transitions. No transitions which could clearly be assigned to singlet → triplet excitations involving metal orbitals were located. A number of states lying above the first ionization potential have been observed for the first time. A number of features in the 6-14 eV energy-loss region of the spectra of these compounds correspond quite well to those observed in free CO.

A number of exploratory studies have been performed. The π → π*, N → T, singlet → triplet excitation has been located in vinyl bromide at 4.05 eV. We have also observed this transition at approximately 3.8 eV in a cis-/trans- mixture of the 1,2-dibromoethylenes. The low-angle spectrum of iron pentacarbonyl was measured over the energy-loss region extending from 2-12 eV. A number of transitions of 8 eV or greater excitation energy were observed for the first time. Cyclopropane was also studied at both high and low angles but no clear evidence for any spin- forbidden transitions was found. The electron-impact spectrum of the methyl radical resulting from the pyrolysis of tetramethyl tin was obtained at 100 eV incident energy and at 0° scattering angle. Transitions observed at 5.70 eV and 8.30 eV agree well with the previous optical results. In addition, a number of bands were observed in the 8-14 eV region which are most likely due to Rydberg transitions converging to the higher ionization potentials of this molecule. This is the first reported electron-impact spectrum of a polyatomic free radical.

Variable-angle photoelectron spectroscopic studies were performed on a series of three-membered-ring heterocyclic compounds. These compounds are of great interest due to their highly unusual structure. Photoelectron angular distributions using HeI radiation have been measured for the first time for ethylene oxide and ethyleneimine. The measured anisotropy parameters, β, along with those measured for cyclopropane were used to confirm the orbital correlations and photoelectron band assignments. No high values of β similar to those expected for alkene π orbitals were observed for the Walsh or Forster-Coulson-Moffit type orbitals.