Sacrae ecclesiae orationes : (quas vulgo collectas vocamus) & hybernae & aestiuae partiu[m] ta[m] de tempore q[uam] de sanctis, cu[m] no[n]nullis conclusionu[m] regulis, ex probatissimis diuinor[um] officiorum codicibus atte[n]tis no[n] minus orthographia

Capitulares grab. xil.

Auicenna quintum volumen continet fen. 20am [et]. 21am. tertij Can[onis] Auic[enne] cu[m] expositionibus Gentilis de fuli. [et] Iacobi de partibus ...

Lugar e imp. tomados del colofón del v. I

Auicenna quintum volumen continet fen. 20am [et]. 21am. tertij Can[onis] Auic[enne] cu[m] expositionibus Gentilis de fuli. [et] Iacobi de partibus ...

Lugar e imp. tomados del colofón del v. I

Vocabularium hebraicum atq[ue] chaldaicu[m] totius veteris testamenti cu[m] aliis tractatibus prout infra in prefatione continetur in academia complutensi nouiter impressum.

Marca tip. en 2F4r (Vindel, 28)

Photovoltaic application of O-doped Wittichenite-Cu 3 BiS 3: from microscopic properties to maximum efficiencies

The electronic properties and the low environmental impact of Cu 3 BiS 3 make this compound a promising material for low-cost thin film solar cell technology. From the first principles, the electronic properties of the isoelectronic substitution of S by O in Cu 3 BiS 3 have been obtained using two different exchange-correlation potentials. This compound has an acceptor level below the conduction band, which modifies the opto-electronic properties with respect to the host semiconductor. In order to analyze a possible efficiency increment with respect to the host semiconductor, we have calculated the maximum efficiency of this photovoltaic absorber material.

Euangelia cum commen. Caietani / Reuerendissimi domini domini Thome de Vio Caietani ... in quattuor Eua[n]gelia et Acta apostoloru[m] ad grecorum codicu[m] veritate[m] castigata ad sensum que[m] vocant literalem co[m]mentarij, cu[m] i[n]dicibus opportunis

Recens in lucem editi

Questiones quolibetales / Ioannis Duns Scoti Ordinis Minoru[m] ... ; [per ... Mauritium de Portu Hibernicum eiusdem ordinis fratrum minoru[m] ... cu[m] diligentia eme[n]dat[a]e].

Última mención de responsabilidad tomada del explicit en H6r

Practica Baldi 1525 : perutilis ac vere aurea practica iuris vtriusq[ue] monarche ac luminis d[omi]ni Baldi de Vbaldis de perusio no[n] solum aduocatis, veru[m] procuratoribus, [et] alijs practica[n]tibus summe necessaria, cu[m] additionibus domini Anton

Pie de imprenta tomado del colofón

Beatissimi Patris Hadriani Sexti Pontificis maximi, Natione traiecte[n]sis ... Quotlibetic[a]e qu[a]estiones lucubratione exactissima & linc[a]eo visu nuper recognit[a]e. Excellentissimi viri ... M. Ioannis Briardi Athensis ... Quæstiones quotlibeticæ, cu

Marca del librero Jean Petit en port. (Renouard, 892)

Mechanical Characterization of Lead-Free Sn-Ag-Cu Solder Joints by High-Temperature Nanoindentation

The reliability of Pb-free solder joints is controlled by their microstructural constituents. Therefore, knowledge of the solder microconstituents’ mechanical properties as a function of temperature is required. Sn-Ag-Cu lead-free solder alloy contains three phases: a Sn-rich phase, and the intermetallic compounds (IMCs) Cu6Sn5 and Ag3Sn. Typically, the Sn-rich phase is surrounded by a eutectic mixture of β-Sn, Cu6Sn5, and Ag3Sn. In this paper, we report on the Young’s modulus and hardness of the Cu6Sn5 and Cu3Sn IMCs, the β-Sn phase, and the eutectic compound, as measured by nanoindentation at elevated temperatures. For both the β-Sn phase and the eutectic compound, the hardness and Young’s modulus exhibited strong temperature dependence. In the case of the intermetallics, this temperature dependence is observed for Cu6Sn5, but the mechanical properties of Cu3Sn are more stable up to 200°C.

El cielo sobre el cielo = O céu sobre o céu

Sobre el Centro José Guerrero de Antonio Jiménez Torrecillas en Granada.

Microscopic Analysis and Applications of the Cu(Sb,Bi)S2 High Optical Absorption

Ternary Cu(Sb,Bi)S2 semiconductors are a group of materials with a wide variety of applications, especially photovoltaic. An analysis of the structural, electronic, and optical properties obtained from first-principles is presented. The microscopic justification of the high absorption coefficients is carried out by splitting the optical properties on chemical species contributions according to the symmetry. Focusing on photovoltaic applications, and from first-principles results, the efficiencies for several solar spectra are obtained as a function of the device thickness. This study indicates the great potential of these materials for photovoltaic and other optical devices.

Microstructure and mechanical properties of physical vapor deposited Cu/W nanoscale multilayers: Influence of layer thickness and temperature

Based on our previous knowledge on Cu/Nb nanoscale metallic multilayers (NMMs), Cu/WNMMs show a good potential for applications as heat skins in plasma experiments and armors, and it could be expected that the substitution of Nb byWwould increase the strength, particularly at high temperatures. To check this hypothesis, Cu/WNMMs with individual layer thicknesses ranging between 5 and 30 nm were deposited by physical vapour deposition, and their mechanical properties were measured by nanoindentation. The results showed that, contrary to Cu/Nb NMMs, the hardness was independent of the layer thickness and decreased rapidlywith temperature, especially above 200 °C. This behavior was attributed to the growth morphology of theWlayers aswell as the jagged Cu/W interface, both a consequence of the lowW adatom mobility during deposition. Therefore, future efforts on the development of Cu/Wmultilayers should concentrate on optimization of theWdeposition parameters via substrate heating and/or ion assisted deposition to increase the W adatom mobility during deposition.

Cu(In,Ga)Se2 absorber thinning and the homo-interface model: Influence of Mo back contact and 3-stage process on device characteristics

Thinning the absorber layer is one of the possibilities envisaged to further decrease the production costs of Cu(In,Ga)Se2 (CIGSe) thin films solar cell technology. In the present study, the electronic transport in submicron CIGSe-based devices has been investigated and compared to that of standard devices. It is observed that when the absorber is around 0.5 μm-thick, tunnelling enhanced interface recombination dominates, which harms cells energy conversion efficiency. It is also shown that by varying either the properties of the Mo back contact or the characteristics of 3-stage growth processing, one can shift the dominating recombination mechanism from interface to space charge region and thereby improve the cells efficiency. Discussions on these experimental facts led to the conclusions that 3-stage process implies the formation of a CIGSe/CIGSe homo-interface, whose location as well as properties rule the device operation; its influence is enhanced in submicron CIGSe based solar cells.

Caietanus super libros de anima cu duplici textus traslatione [Texto impreso] : antiqua

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