Defining product-service network configurations and location roles: A current and future state analysis framework for international engineering operations

Many manufacturing firms have developed a service dimension to their product portfolio. In response to this growing trend of servitisation, organisations, often involved in complex, long-lifecycle product-service system (PSS) provision, need to reconfigure their global engineering networks to support integrated PSS offerings. Drawing on parallel concepts in 'production' networks, the idea of 'location role' now becomes increasingly complex, in terms of service delivery. As new markets develop, locations in a specific region may need to grow/adapt engineering service 'competencies' along the value chain, from design and build to support and service, in order to serve future location-specific requirements and, potentially, those requirements of the overall network. The purpose of this paper is to advance understanding of how best to design complex multi-organisational engineering service networks, through extension of the 'production' network location role concept to a PSS context, capturing both traditional engineering 'design and build' and engineering 'service' requirements. Copyright © 2012 Inderscience Enterprises Ltd.

Policy as a struggle for meaning: disentangling knowledge translation across international health contexts

Over the last decade, research in medical science has focused on knowledge translation and diffusion of best practices to enable improved health outcomes. However, there has been less attention given to the role of policy in influencing the translation of best practice across different national contexts. This paper argues that the underlying set of public discourses of healthcare policy significantly influences its development with implications for the dissemination of best practices. Our research uses Critical Discourse Analysis to examine the policy discourses surrounding the treatment of stroke across Canada and the U.K. It focuses in specific on how concepts of knowledge translation, user empowerment, and service innovation construct different accounts of the health service in the two countries. These findings provide an important yet overlooked starting point for understanding the role of policy development in knowledge transfer and the translation of science into health practice. © 2011 Operational Research Society. All rights reserved.

A miniature insertion element transposable in Microcystis sp FACHB 854

A 186-bp sequence with imperfect terminal inverted repeats and target direct repeats but without any transposase-encoding capacity was found to be transposable in an isolate derived from Microcystis sp. FACHB 854. This miniature insertion element, designated as ISM854-1, and with its homologues present at least 10 copies in the genome of Microcystis FACHB 854, is inserted into the 8-bp long and AT-rich target sequences, but none or few in other Microcystis strains. A variant of ISM854-1, denoted ISM854-1A, has perfect inverted repeat sequences and may transpose in pairs in a structure like a composite transposon. This is the first report of non-autonomous transposition of a mini-IS in a cyanobacterium.

Rearrangeable nonblocking SOI waveguide thermooptic 4x4 switch matrix with low insertion loss and fast response

A rearrangeable nonblocking 4 x 4 thermooptic silicon-on-insulator waveguide switch matrix at 1.55-mu m integrated spot size converters is designed and fabricated for the first time. The insertion losses and polarization-dependent losses of the four channels are less than 10 and 0.8 dB, respectively. The extinction ratios are larger than 20 dB. The response times are 4.6 mu s for rising edge and 1.9 mu s for failing edge.

A silicon-on-insulator-based thermo-optic waveguide switch with low insertion loss and fast response

A silicon-on-insulator-based thermo-optic waveguide switch integrated with spot size converters is designed and fabricated by inductively coupled plasma reactive ion etching. The device shows good characteristics, including low, insertion loss of 8 +/- 1 dB for wavelength 1530-1580 nm and fast response times of 4.6 As for rising edge and 1.9 mu s for failing edge. The extinction ratios of the two channels are 19.1 and 18 dB, respectively.

Influence of GaAsP insertion layers on performance of InGaAsP/InGaP/AlGaAs quantum-well laser

We report on the use of very thin GaAsP insertion layers to improve the performance of an InGaAsP/InGaP/AlGaAs single quantum-well laser structure grown by metal organic chemical vapour deposition. Compared to the non-insertion structure, the full width at half maximum of photoluminescence spectrum of the insertion structure measured at room temperature is decreased from 47 to 38 nm indicating sharper interfaces. X-ray diffraction shows that the GaAsP insertion layers between AlGaAs and InGaP compensates for the compressive strain to improve the total interface. The laser performance of the insertion structure is significantly improved as compared with the counterpart without the insertion layers. The threshold current is decreased from 560 to 450mA while the slope efficiency is increased from 0.61 to 0.7W/A and the output power is increased from 370 to 940mW. The slope efficiency improved is very high for the devices without coated facets. The improved laser performance is attributed to the suppression of indium carry-over due to the use of the GaAsP insertion layers.

Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer

Molecular beam epitaxy was employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal current was effectively reduced and electron resonant tunneling through quantum dots under both forward and reverse biased conditions was observed at relatively high temperature of 77 K. The ground states of quantum dots were found to be at similar to 0.19 eV below the conduction band of GaAs matrix. The theoretical computations were in conformity with experimental data. (c) 2006 The Electrochemical Society.

Wavelength tuning in GaAsAlGaAs quantum wells by InAs submonolayer insertion

Wavelength tuning of exciton emissions has been achieved simply by inserting an InAs submonolayer at the centre of GaAs quantum wells during molecular beam epitaxy growth. Photoluminescence measurements show that the emission energy can be effectively tuned from the quantum-well-determined energy down to less than the band gap of GaAs, depending on the well width as well as the InAs layer thickness. Using the effective-mass approximation, the tuning effect can be well predicted theoretically The results reported here may provide an alternative way to tune the wavelength in optoelectronic devices.

SOI optical switch matrix integrated with spot size converter (SSC) and total internal reflection (TIR) mirrors

SOI (Silicon on Insulator) based photonic devices has attracted more and more attention in the recent years. Integration of SOI optical switch matrix with isolating grooves, total internal reflection (TIR) mirrors and spot size converter (SSC) was studied. A folding re-arrangeable non-blocking 4x4 optical switch matrix and a blocking 16x16 matrix with TIR mirrors and SSC were fabricated on SOI wafer. The performaces, including extinction ratio and the crosstalk, are better than before. The insertion loss and the polarization dependent loss (PDL) at 1.55 mu m increase slightly with longer device length, more bend and intersecting waveguides. The insertion losses decrease 2 similar to 3 dB when anti-reflection films are added in the ends of the devices. The rise and fall times of the devices are 2.1 mu s and 2.3 mu s, respectively.