近60年我国土壤侵蚀科学研究进展

在系统总结我国近60年土壤侵蚀科学研究取得的成就的基础上,通过分析与整合,重点介绍全国土壤侵蚀时空特征与动态变化、土壤侵蚀过程及其调控机制、黄河泥沙来源与粗泥沙集中来源区的界定、风力侵蚀机制及沙漠化防治、侵蚀环境演变与调控等5个对土壤侵蚀学科发展有重大意义的进展,提出了我国土壤侵蚀学科亟待加强的3个领域。

工程建设弃土弃渣水土流失过程试验研究

弃土弃渣是工程建设产生的最主要地面组成物质之一。采用野外放水冲刷试验方法,对黄河班多水电站工程区弃土弃渣水土流失过程进行了研究。(1)不同供水流量下,产流率随供水过程的动态变化整体呈增长趋势,可用幂函数方程描述,开始产流后的5 min内产流过程的变化幅度较大,随后较为平缓,并趋于基本稳定;(2)不同供水流量下,产沙率随供水历时的增长而减少,可用对数相关方程描述,小流量下变化过程波动较小,大流量下变化幅度较大;(3)不同供水流量下,含沙量随着供水历时的增长而减少,可用对数相关方程描述。各流量下的变化趋势基本一致;(4)次产流深、次产沙模数皆随供水流量的增大而增加,增加趋势基本相同,皆可用对数相关方程描述。平均含沙量随供水流量的增大先增加后减小,临界值为7.17 L/min,可用抛物线相关方程描述;(5)次产沙模数随次产流深的增大而增加,表现为很好的正相关关系,可用对数相关方程来描述。

不同最小控制时段约束下黄河天然径流量变化阶段性

阶段性是描述河流径流量丰枯变化持续长度的主要特征。在年际变化较大的长时间序列中,通过确定不同最小控制时段,可以把高频变化的年份和时段有效合并,从而更好描述不同流量的持续特征。在划分径流量丰枯连续自然阶段的基础上,根据最小控制时段,对相邻阶段进行逐步合并,提取并分析了黄河三门峡水文站1470-1997年528 a的逐年天然径流量阶段性变化特征。分析表明,黄河天然径流量多年平均值为511.81×108m3,变差系数为0.20,年际变化非常剧烈;随着最小控制时段的增加,阶段数呈指数函数迅速减少;每一阶段平均、最小和最大阶段长度呈显著的线性增加趋势;各阶段天然径流量的差异也逐步减小。当最小控制时段为5,10,20,30 a时,可以划分为60,24,15,9个阶段,相应的平均阶段长度也分别为8.7,21.7,27.4,57.9 a,阶段最大值与最小值的极差分别是平均值的71.8%,62.4%,47.6%和13.7%。

基于景观格局变化评价的梯级水电开发规划方案研究

根据景观生态学理论,借助地理信息系统工具,采用定量的方法分析工程景观格局状况,通过建立水电开发建设规划方案的景观格局变化评价的指标体系和评价方法,研究水电开发规划方案对区域景观格局的影响。本方法应用于黄河上游黑山峡河段水电开发建设方案析分析。结果表明:不同规划方案实施后对原有生态环境均产生了一定影响。通过对不同方案与研究区域生态现状进行灰色关联分析,红山峡、五佛、小观音和大柳树4个坝址均修建低坝的方案的景观格局指数最高,研究区域景观生态风险最小。最终确定该方案为最优方案,该方案对区域原有生态体系性质和功能影响较小。

黄土高原水土保持政策演变

水土保持政策是指导和促进水土保持开展的主要社会驱动力之一。新中国成立以来,黄土高原水土保持经过探索治理、重点治理、全民治理、小流域综合治理和预防为主、依法防治等5个阶段。在不同阶段,水土保持目标和任务、治理主体、政策的针对性和治理主导措施侧重等均有变化。在分析政策演变的基础上,提出了针对新时期水土保持特点的政策建议。

黄河中游地区年径流对土地利用变化时空响应分析

以黄河中游河龙区间为研究区,以水土流失综合治理及生态环境建设导致的土地利用/覆被变化为背景,采用非参数统计法,基于区内38个水文站20世纪50年代至2000年水文数据,分析流域年径流对土地利用/覆被变化响应的时空变异特征,估算影响因素贡献率。结果表明:其中29条流域年径流量呈显著减少趋势,变率为0.17~2.61 mm/a;28条流域年径流量具有显著跃变时间,无定河流域各水文站跃变时间多在1970—1973年间,其余则多为1978—1985年,最晚为1994年;在5%、50%和95%的发生频率上,跃变前后时段年径流量减少幅度以30%~60%普遍,最大分别为73.2%、63.5%和69.7%;河龙区间整体呈显著减少趋势,变率为0.79 mm/a,跃变时间发生在1979年,3个频率上的减少幅度分别为46.5%、42.4%和24.1%。估算的11条流域中有9条土地利用/覆被变化等人类活动对流域径流减少影响程度超过50%。水土保持措施面积的增加,尤其淤地坝等水利水保工程措施的持续修建,对区域地表径流变化具有明显影响。

黄土高原六盘山生态经济圈功能区规划研究

六盘山区位于黄河中上游,是黄土高原西部天然生态屏障和水源涵养区,在中国生态环境建设中具有重要战略地位。本区土地资源丰富,生态环境洁净,旱作农业潜力大,草畜业兴旺。六盘山生态经济圈规划了4个功能区和7大特色农业基地产业,以六盘山国家自然保护区为中心,加大退耕造林种草与管护力度,到2015年基本修复六盘山区受损的森林生态系统和灌丛草原植被;以旱作农业技术体系为支撑,建立高效可持续发展的生态农业系统和绿色农牧产品基地,为经济社会发展和新农村建设提供良好的生态环境和农业基础。

A colorimetric assay for screening microcystin class compounds in aquatic systems

Secondary metabolites produced by water-blooming cyanobacteria in eutrophic waters include some potent hepatotoxins, These compounds also have tumour-promoting properties, attributable to their inhibition and activation of protein phosphatases and kinases respectively. The inhibitory effect of these toxins on protein phosphatases have been employed in a commonly used radiometric assay, involving the use of a P-32-labeled substrate, for the detection and quantitation of these compounds. This paper investigates and describes a colorimetric method in which the activity of protein phosphatase 2A is determined by measuring the rate of colour production from the release of yellow p-nitrophenol using p-nitrophenyl phosphate as the substrate. Results of this study suggest that the colorimetric protein phosphatase inhibition assay is a simple, inexpensive tool for screening substances that may have tumour-promoting characteristics in aquatic systems. The detection limit of the colorimetric method is comparable to the radiometric assay. (C) 1998 Elsevier Science Ltd. All rights reserved.

Structural and Optical Performance of GaN Thick Film Grown by HVPE

Thick GaN films were grown on GaN/sapphire template in a vertical HVPE reactor. Various material characterization techniques,including AFM, SEM, XRD, RBS/Channeling, CL, PL, and XPS, were used to characterize these GaN epitaxial films. It was found that stepped/terraced structures appeared on the film surface,which were indicative of a nearly step-flow mode of growth for the HVPE GaN despite the high growth rate. A few hexagonal pits appeared on the surface, which have strong light emission. After being etched in molten KOH, the wavy steps disappeared and hexagonal pits with {1010} facets appeared on the surface. An EPD of only 8 ×10~6cm~(-2) shows that the GaN film has few dislocations. Both XRD and RBS channeling indicate the high quality of the GaN thick films. Sharp band-edge emission with a full width at half maximum（FWHM）of 67meV was observed, while the yellow and infrared emissions were also found. These emissions are likely caused by native defects and C and O impurities.

Persistent Photoconductivity in n-type GaN

The persistent photoconductivity（PPC） phenomena in n-type GaN Films grown by metalorganic chemical vapor deposition（MOCVD） have been studied. After using some testing and analysis methods, such as the double crystal X-ray diffraction（DCXRD）, the photolumineseence（PL） spectra, etc, it is found that the issue which influences PPC in n-type GaN is not relative to the dislocations and yellow band （YB）, and is caused by the doping level of Si most likely.

Photoluminescence from carbon nanotubes

We observed yellow colored light emission bands from multiwalled carbon nanotubes in photo-luminescence (PL) experiments. The light emission band features indicate that the PL bands are associated with the electronic properties inherent to the carbon nanotube (CNT) structures.

Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers

Photoluminescence (PL) was investigated in undoped GaN from 4.8 K to room temperature. The 4.8 K spectra exhibited recombinations of free exciton, donor-acceptor pair (DAP), blue and yellow bands (Ybs). The blue band (BB) was also identified to be a DAP recombination. The YB was assigned to a recombination from deep levels. The energy-dispersive X-ray spectroscopy show that C and O are the main residual impurities in undoped GaN and that C concentration is lower in the epilayers with the stronger BB. The electronic structures of native defects, C and O impurities, and their complexes were calculated using ab initio local-density-functional (LDF) methods with linear muffin-tin-orbital and 72-atomic supercell. The theoretical analyses suggest that the electron transitions from O-N states to C-N and to V-Ga states are responsible for DAP and the BB, respectively, and the electron transitions between the inner levels of the C-N-O-N complex may be responsible for the YB in our samples. (C) 2002 Elsevier Science B.V. All rights reserved.

Influence of precipitates on GaN epilayer quality

GaN epilayers grown on pre-nitridated (0001) sapphire substrates by metallorganic vapor phase epitaxy were investigated by wavelength dispersive X-ray spectroscopy and energy dispersive S-ray spectroscopy. Precipitates were observed to mainly consist of O impurity whose strengths were weaker than surrounding matrix. The precipitates were larger in size and distributed more sparsely and inhomogeneously in < 11-20 > directions of the epilayers grown on substrates pre-nitridated for longer periods. The larger precipitates often joined to cracks in the TEM specimens. The crack formation seems to be attributed to the compressive stress concentration at edge angles of the larger precipitates. Yellow luminescence of the epilayers was imaged by cathodoluminescence. The distribution similarity between the cathodoluminescence and the precipitates suggested that the precipitates were responsible for the yellow luminescence band. (C) 2000 Elsevier Science S.A, All rights reserved.