氧化物气敏半导体与H_2O(g)、O_2(g)及还原性气体相互作用的研究

本文采用自行设计的均速增加加热电压改变元件温度的方法以及动、静态气敏特性测试方法并借助其它测试手段（X光衍射、BET、扫描电流）系统地研究了表面电导控制型SnO_2系元件和体电导控制型γ-Fe_2O_3元件在变温过程中与H_2O(g)、O_2(g)和还原性气体相互作用的规律。实验结果表明：添加剂Al_2O_3、MgO、Pd、Pt和Sb_2O_3均对元件的体电阴均有调制作用。Al_2O_3是以微粒状存在于元件内，它为元件提供了活化中心，提高了元件的灵敏度。而γ-Fe_2O_3具有超微细结构。SnO_2系元件和γ-FeO_3元件取样电压(V_L)与温度（T）的变化关系在空气和惰性气氛中均是非线性的。材料组份不同的元件，其V_L～T变化规律不同。各元件在空气和惰性气氛中的变化，除阻值不同外，其V_L～T变化规律基本相同。综合考虑添加剂(Al_2O_3、MgO)和气氛（空气、惰性气氛、纯氧气）的影响，SnO_2系元件的V_L～T变化规律不仅是由于氧在元件表面上的吸附及吸附状态的不同所引起，很大程度上取决于元件材料的组成和温度对材料内载流子浓度和逐移率的影响。基于对SnO_2系元件的V_L～T变化规律的分析，γ-Fe_2O_3元件V_L随温度的变化也是由于环境中的氧和材料内载流子迁移率随温度的变化所致。SnO_2系元件和γ-Fe_2O_3元件在不同温度所测的V_L～T变化关系表明：SnO_2元件在低温(<72%RH)条件下，具有与干燥空气中相同的V_L～T变化关系；在高温度(>72%RH)的空气中，H_2O(g)的存在对元件低温区(<100 ℃) (200 ℃-400 ℃)的V_L值均有影响，在低温区的V_L值较干燥空气中的V_L值高；中温区的V_L值较干燥空气中的V_L值低。把在约98%RH的空气和氩气中的V_L～T变化曲线比较表明：中温区的实验现象是由于空气中H_2O(g)与O_2(g)共存所致。γ-Fe_2O_3元件在不同温气气氛中的V_L～T变化规律相同，且在元件工作温度（129 ℃～320 ℃）范围内V_L值相同，但均较干燥空气中该条件下的V_L值高。在实验中亦观察到SnO_2元件在温度低于72%RH中长期放置亦可观察到与实验中温度>72%RH条件下相同的V_L～T变化。SnO_2元件在空气和惰性气氛中对还原性气体均有气敏性。而且在惰性气氛中对微量还原性气体（H_2）的灵敏度比在空气中的灵敏度高。掺贵金属Pd或Pt的SnO_2元件在惰性气氛中，当H_2浓度高于8000ppm时，元件电导突变式增加。我们认为SnO_2系元件在空气中检测还原性气体的工作机理是表面化学反应过程；在惰性气氛中其工作机理是表面解离吸附过程。γ-Fe_2O_3元件在空气中对C_4H_(10)具有较高的选择性。但在惰性气氛中对还原性气体不具有气敏性。我们认为环境中氧是体电导控制型气敏元件气敏性不可缺少的中间媒介。其检测机理是微观可逆氧化-还原过程。

蹄蝠科的核型进化：比较染色体涂色、G带和C带分析

：与其姐妹科(菊头蝠科)相比，蹄蝠科的细胞遗传学研究较少。迄今为止，仅少数蹄蝠科几个物种有高分辨率的G带核型报道，且有关该科核型进化的大多数结论都是基于常规Giemsa染色研究而得。该研究利用三叶小蹄蝠的染色体特异探针，通过比较染色体涂色、G和C显带，建立了5种蹄蝠的染色体同源性图谱，并探讨了它们同源染色体间的G和C带异同。结果表明：罗伯逊易位、臂内倒位以及异染色质的扩增可能是蹄蝠科物种核型进化的主要机制。通过对这5种蹄蝠物种及其外群物种之间的同源染色体片段的比较分析，作者推测蹄蝠科的祖先核型并不像先前认为的全由端着丝粒染色体组成, 而应该含有中着丝粒染色体。

OXYGEN ANALYSES IN HIGH-TC SUPERCONDUCTING FILMS BY MEV PROTON ELASTIC BACKSCATTERING

A technique for analysis of total oxygen contents in high-T(c) superconducting films is demonstrated. It uses elastic backscattering (EBS) of 1.5-2.5 MeV protons. By comparing the H EBS spectra from substrate materials, the absolute oxygen content in the films can be easily calculated. It is estimated that the analysis can be accurate to better than 5% for YBCO films with thicknesses from several hundred angstroms to several microns. Comparisons with RBS are given and advantages of this technique are shown.

MEV PROTON ELASTIC BACKSCATTERING ANALYSIS OF SILICON-NITRIDE AND OXIDE LAYERS ON SILICON

A simple method for the analysis of concentration ratios N/Si and O/Si in silicon nitride and oxide layers on silicon substrate is presented. 1.95-MeV proton elastic backscattering was used to determine the composition and density. A comparison with 2.1-MeV helium Rutherford backscattering measurements is given. Results are in good agreement with each other. The method is especially useful to analyze samples of 20 000 angstrom or thicker layers. We conclude that these two techniques are complementary for the measurements of samples with different thickness. A brief discussion has been given on results.

PROTON-IMPLANTED NEW TYPE SILICON MATERIAL SUBJECTED TO 2-STEP FURNACE ANNEALING

A high-resistivity defect layer buried beneath the silicon surface layer by using proton implantation and two-step conventional furnace annealing is described. During the first annealing step (600-degrees-C), implanted hydrogen atoms move towards the damage region and then coalesce into hydrogen gas bubbles at the residual defect layer. During the second annealing step (1180-degrees-C) these bubbles do not move due to their large volume. Structural defects are formed around the bubbles at a depth of approximately 0.5-mu-m. The defect layer results in a high resistivity value. Experiments show that the quality of the surface layer has been improved because the surface Hall mobility increased by 20%. The sample was investigated by transmission electron microscopy.

A transmission electron microscopy study of microstructural defects in proton implanted silicon

The microstructure of silicon on defect layer, a new type of silicon-on-insulator material using proton implantation and two-step annealing to obtain a high resistivity buried layer beneath the silicon surface, has been investigated by transmission electron microscopy. Implantation induced a heavily damaged region containing two types of extended defects involving hydrogen: {001} platelets and {111} platelets. During the first step annealing, gas bubbles and {111} precipitates formed. After the second step annealing, {111} precipitates disappeared, while the bubble microstructure still remained and a buried layer consisting of bubbles and dislocations between the bubbles was left. This study shows that the dislocations pinning the bubbles plays an important role in stabilizing the bubbles and in the formation of the defect insulating layer. (C) 1996 American Institute of Physics.

外磁场对(Ga,Mn)As有效g因子的影响

利用时间分辨Kerr旋光技术测量低温下稀磁半导体Ga_(0.937)Mn_(0.063)As中光注入极化载流子的自旋进动信号,并观察到自旋极化载流子的有效g因子值随外磁场的增强而增大的反常现象.这归结于磁场导致局域化空穴转化为非局域化空穴,从而使自发磁化强度增强,有效g因子值增大.基于此物理图像,进一步给出了(Ga,Mn)As的有效g因子与外磁场的关系式.

High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers

Quantum dot (QD) lasers are expected to have superior properties over conventional quantum well lasers due to a delta-function like density of states resulting from three dimensional quantum confinements. QD lasers can only be realized till significant improvements in uniformity of QDs with free of defects and increasing QD density as well in recent years. In this paper, we first briefly give a review on the techniques for preparing QDs, and emphasis on strain induced self-organized quantum dot growth. Secondly, self-organized In(Ga)As/GaAs, InAlAs/GaAlAs and InAs/InAlAs Qds grown on both GaAs and InP substrates with different orientations by using MBE and the Stranski-Krastanow (SK) growth mode at our labs are presented. Under optimizing the growth conditions such as growth temperature, V/III ratio, the amount of InAs, InxGa1-xAs, InxAl1-xAs coverage, the composition x etc., controlling the thickness of the strained layers, for example, just slightly larger than the critical thickness and choosing the substrate orientation or patterned substrates as well, the sheet density of ODs can reach as high as 10(11) cm(-2), and the dot size distribution is controlled to be less than 10% (see Fig. 1). Those are very important to obtain the lower threshold current density (J(th)) of the QD Laser. How to improve the dot lateral ordering and the dot vertical alignment for realizing lasing from the ground states of the QDs and further reducing the Jth Of the QD lasers are also described in detail. Thirdly based on the optimization of the band engineering design for QD laser and the structure geometry and growth conditions of QDs, a 1W continuous-wave (cw) laser operation of a single composite sheet or vertically coupled In(Ga)As quantum dots in a GaAs matrix (see Fig. 2) and a larger than 10W semiconductor laser module consisted nineteen QD laser diodes are demonstrated. The lifetime of the QD laser with an emitting wavelength around 960nm and 0.613W cw operation at room temperature is over than 3000 hrs, at this point the output power was only reduced to 0.83db. This is the best result as we know at moment. Finally the future trends and perspectives of the QD laser are also discussed.

Fe-57 Mossbauer spectroscopic and magnetic studies of R3Fe29-xVx (R = Y, Ce, Nd, Sm, Gd, Tb, and Dy)

Mossbauer spectra for Fe atoms in the series of R3Fe29-xVx (R = Y, Ce, Nd, Sm, Gd, Tb, and Dy) compounds were collected at 4.2 K. The ratio of 14.5 T/mu(B) between the average hyperfine field B-hf and the average Fe magnetic moment mu(Fe)(MS), obtained from our data, in Y3Fe29-xVx is in agreement with that deduced from the RxTy alloys by Gubbens et al. The average Fe magnetic moments mu(Fe)(MS) in these compounds at 4.2 K, deduced from our Mossbauer spectroscopic studies, are in accord with the results of magnetization measurement. The average hyperfine field of the Fe sites for R3Fe29-xVx at 4.2 K increases with increasing values of the rare earth effective spin (g(J) - 1) J, which indicates that there exists a transferred spin polarization induced by the neighboring rare earth atom.

Formation and magnetic properties of Fe16N2 films prepared by ion-beam-assisted deposition

Fe-N films containing the Fe16N2 phase were prepared in a high-vacuum system of ion-beam-assisted deposition (IBAD). The composition and structure of the films were analysed by Auger electron spectroscopy (AES) and X-ray diffraction (XRD), respectively. Magnetic properties of the films were measured by a vibrating sample magnetometer (VSM). The phase composition of Fe-N films depend sensitively on the N/Fe atomic arrival ratio and the deposition temperature. An Fe16N2 film was deposited successfully on a GaAs (1 0 0) substrate by IBAD at a N/Fe atomic arrival ratio of 0.12. The gram-saturation magnetic moment of the Fe16N2 film obtained is 237 emu/g at room temperature, the possible cause has been analysed and discussed. Hysteresis loops of Fe16N2 have been measured, the coercive force H-c is about 120 Oe, which is much larger than the value for Fe, this means the Fe16N2 sample exhibits a large uniaxial magnetocrystalline anisotropy. (C) 1998 Elsevier Science B.V. All rights reserved.

维生素C二步发酵新组合菌G.529及其应用

本文筛选一株苏芸金杆菌与氧化葡萄糖酸杆菌组成的新组合菌G. B529，并对其生物学性质进行研究，结果表明：新组合菌的摇瓶发酵转化率较原菌系提高4.83个百分点，发酵速度快，且具有耐受高浓度（10%）山梨糖的特性。为使G. B529的潜能得到最大程度的发挥，对其影响因素进行研究。首先应用均匀设计方法确立了G. B529的发酵培养基优化配比，在所实验的范围内，发酵转化率与玉米浆浓度成正相关性，尿素浓度 1．45%佩W/V)时，转化率达最大。其次种液各参数对发酵影响实验确立了判断种子质量高低的方法。结果显示种液中的大菌OD值一1.6 X小菌OD值可以作为种液的质量指数。最后对种子质量的影响实验显示适当提高玉米浆、葡萄糖等成分的浓度与降低尿素的浓度及调高pH值均有利于种液质量的改善。同时低接种量、大通气量和选择种龄为14小时均有助于种液质量指数的提高。 新组合菌系在选定的条件下枷3罐中4批发酵显示出很强的发酵能力，平均醇酸转化率较对照提高8.16个百分点，周期缩短10.6小时。其在300M3罐中生产试用行，连续26批次的平均醇酸转化率达87.40%,较生产用菌提高3.32个百分点。平均周期也缩短1．3小时。