A one-way MOS analog switch

In this paper, a one-way NMOS analog switch featuring a low plug-in consumption is presented. The performances of analog switch, especially the performances of source follower are simulated under different conditions with PSPICE. Simulation results and factors affecting the deviation between input and output are analyzed, some advice on how to reduce the deviation between input and output is given. Ar the end of the paper, voltage relationship between input and output of the analog switch is obtained. Function of first degree, Vout = kVin + V0, is used to approximate the voltage relationship. The simulation results anti the value achieved from the approximation equation are given as well.

Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing

Self-organized InAs quantum; dots sheets are grown on GaAs(100) substrate and tapped by 80nm GaAs layer with molecular beam epitaxy. Samples were annealed and characterized with Raman spectra, transmission electron microscopy (TEM) and photolumincscence (PL). The Raman spectra indicates arsenic clusters in the GaAs capping layer. The TEM analysis revealed the relaxation of strain in some InAs islands with the introduction of the network of 90 dislocations. In addition, the structural changes also lead to the changes of the PL spectra from me InAs islands. Their correlation was discussed, Our results suggest:est that annealing may be used to intentionally modify me properties of self-organized InAs islands on GaAs.

Iron related emission spectra in InP

This paper presents a detailed PL study of Fe2+ related four zero-phonon(ZP) lines and their related phonon sidebands. Four zero-phonon transitions at approximate to 2800 cm(-1) along with the accompanying phonon sidebands extending down to 2400 cm(-1). There are ta two prominent regions in the phonon sidebands. One is ascribed to coupling to acoustic-type phonons (2700 cm(-1) region), the other is due to coupling to optic-type phonons (2500 cm(-1) region). Beside broad coupling with lattice modes, there are several groups of lines. They are ascribed to resonant modes, impurities induced gap modes and local modes.

Room-temperature continuous-wave lasing from InAs GaAs quantum dot laser grown by molecular beam epitaxy

Quantum dot lasers are predicted to have proved lasing characteristics compared to quantum well and quantum wire lasers. We report on quantum dot lasers with active media of vertically stacked InAs quantum dots layers grown by molecular beam epitaxy. The laser diodes were fabricated and the threshold current density of 220 A/cm(2) was achieved at room temperature with lasing wavelength of 951 nm. The characteristic temperature To was measured to be 333K and 157K for the temperature range of 40-180K and 180-300K, respectively.

Nano-layer structure of silicon-on-insulator materials

Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.

Space grown semi-insulating gallium arsenide single crystal and its application

Low noise field effect transistors and analogue switch integrated circuits (ICs) have been fabricated in semi-insulating gallium arsenide (SI-GaAs) wafers grown in space by direct ion-implantation. The electrical behaviors of the devices and the ICs have surpassed those fabricated in the terrestrially grown SI-GaAs wafers. The highest gain and the lowest noise of the transistors made from space-grown SI-GaAs wafers are 22.8 dB and 0.78 dB, respectively. The threshold back-gating voltage of the ICs made from space-grown SI-GaAs wafers is better than 8.5 V The con-elation between the characterizations of materials and devices is studied systematically. (C) 2002 COSPAR. Published by Elsevier Science Ltd. All rights reserved.

Flip-chip bonded hybrid CMOS/SEED optoelectronic smart pixels

Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.

An Ameliorated Phase Generated Carrier Demodulation Algorithm With Low Harmonic Distortion and High Stability

A novel ameliorated phase generated carrier (PGC) demodulation algorithm based on arctangent function and differential-self-multiplying (DSM) is proposed in this paper. The harmonic distortion due to nonlinearity and the stability with light intensity disturbance (LID) are investigated both theoretically and experimentally. The nonlinearity of the PGC demodulation algorithm has been analyzed and an analytical expression of the total-harmonic-distortion (THD) has been derived. Experimental results have confirmed the low harmonic distortion of the ameliorated PGC algorithm as expected by the theoretical analysis. Compared with the traditional PGC-arctan and PGC-DCM algorithm, the ameliorated PGC algorithm has a much lower THD as well as a better signal-to-noise-and-distortion (SINAD). A THD of below 0.1% and a SINAD of 60 dB have been achieved with PGC modulation depth (value) ranges from 1.5 to 3.5 rad. The stability performance with LID has also been studied. The ameliorated PGC algorithm has a much higher stability than the PGC-DCM algorithm. It can keep stable operations with LID depth as large as 26.5 dB and LID frequency as high as 1 kHz. The system employing the ameliorated PGC demodulation algorithm has a minimum detectable phase shift of 5 mu rad/root Hz @ 1 kHz, a large dynamic range of 120 dB @ 100 Hz, and a high linearity of better than 99.99%.

HIRFL-CSR前端总线控制器的SD驱动

The HIRFL-CSR EVME bus controller, which runs Embedded Linux OS, is based on AT91RM9200 microprocessor, whose core is ARM920T. There are hardware interface electronic circuits connecting AT91RM9200 microprocessor and Security Digital Memory Card (SD Card). This article analyzes Operation System kernel and Linux device driver’s structure, designs SD Card driver based on Embedded Linux, which runs on AT91RM9200 microprocessor.中文文摘：简要论述了用于兰州重离子加速器冷却储存环(HIRFL-CSR)控制系统的前端总线控制器。该控制器是基于ARM920T核心的AT91RM9200处理器,运行嵌入式Linux操作系统。描述了AT91RM9200处理器与Security Digital MemoryCard(SD卡)的硬件接口电路,分析了操作系统内核和Linux驱动程序结构,设计和实现了嵌入式Linux下基于AT91RM9200处理器的SD卡驱动程序。

高计数率下的四路反堆积放大电路

A quadruple rejected-pile up amplifier used for high counting rate up to 105/s of average counting rate was described in this paper.To meet the need of high counting rate,the baseline regulation fuction,rejected pile up fuction was designed in the amplifier and the mark of rejected pile up was given for treatment of successive circuits.The quadruple amplifier consisting of four same circuits was assembled in one single NIM modul.These circuits have the advantages of compact construction,small volume and sta...中文文摘：介绍一种在高计数率情况下的反堆积放大器,它允许通过的平均计数为105/s。该放大器为了适应高计数率的要求,设计了基线调节功能和反堆积功能,给出了堆积标志,以便后继电路的处理。该电路在一个单宽NIM插件中有完全相同的四路电路工作,结构紧凑,体积小,工作性能稳定。

基于CPLD物理实验电路的研究

复杂可编程逻辑器件CPLD是当今应用最广泛的可编程专用集成电路（ASIC）之一，使用一片CPLD可以代替原来用很多器件才能完成的逻辑功能，我们用CPLD来构建数字电路，和常规逻辑器件相比其突出特点是：元件少，成本低，功耗低。ALTERA公司是全球著名的复杂可编程逻辑器件供应商，结合实际工作的需要，我们选用了ALTERA公司的MAXII EPM1270芯片做了一系列实验电路，先后开展的研究工作包括：1.超低频/超大脉宽信号源；2.门延迟产生电路。 这两方面的工作分别在论文的有关专题介绍。超低频/超大脉宽信号源用作为多定标测量数据获取系统的门控信号，主要功能是产生一系列精确度高、稳定性好的低频、超低频/超大脉宽脉冲信号，且可以根据需要选择手动触发单个大脉冲输出。本电路输出脉冲f/T的精确度≤0.02‰，输出脉冲f/T的稳定性≤±0.01‰。基于CPLD设计的超低频/超大脉宽信号源电路只需一片CPLD就可以取代原来用很多逻辑器件才能完成的功能，此外基于CPLD设计的该信号源的最大周期可超过1000s、步进脉宽调节可达T/1000，远远超过用户提出的指标，从而能满足更多的应用需要。 基于CPLD的门延迟产生电路主要功能是对输入信号进行展宽延迟，我们将它做成NIM单宽插件可提供8道信号延迟展宽，支持NIM负信号输入，用于物理实验中的符合测量、多路时间测量系统及能量测量系统中的ADC或QDC门控信号等，替代目前传统同类型的插件GG8000。 目前两个电路都已调试成功，其中超低频/超大脉宽信号源已交付用户使用，获得满意结果

微弱信号的获取方法及电路研究

论文以长时间超低零漂积分器和基于前端ASIC芯片的微弱信号读出系统两项课题为核心展开，讨论我们在两类典型微弱信号的获取方法和电路研究方面上采用的一些新思路和新方法。论文论述了用于托卡马克装置上电磁测量的长时间超低零漂积分器的原理与设计。积分器的积分零漂被减小到极低的水平，积分1000s绝对积分零漂典型值为16.7mV，同时积分器的非线性误差也得到改善。同时，阐述了一种采用前端ASIC芯片实现微弱信号读出的新型方法。它替代了采用分离元件和电子学插件构建微弱信号读出系统的传统方法，着重解决了近代核与粒子物理实验中越来越突出的多路多道需求和高性能指标要求

多通道电荷时间测量方法与电路研究

随着国家大科学工程兰州重离子加速器冷却储存环(HIRFL-CSR)建成，HIRFL-CSR实验探测系统也正在建设当中。实验探测系统由外靶系统和内靶系统构成。用于探测中子的中子墙探测器是外靶系统中的一个重要组成部分，它有252个探测单元，每一个探测器单元都要求很好的能量分辨和时间分辨，还要求有很高数据获取率。为此，我们设计研发适合于中子墙探测器这样的大型闪烁体探测器的前端电子学读出系统。论文从发展髙性能多路小型化前端电路和研究QAC、TAC的方法和电路两个方面进行研究，讨论了我们采用的新思路和新方法。 我们设计的新型的多道高精度的电荷-电压、时间转换电路.该电路主要用于在相关控制信号的配合下，将光电倍增管输出的快电流脉冲信号转化为电压信号,并在控制信号作用下,将电压信号通过数据采集系统直接送入计算机进行处理。电路采用新型的QAC方法，用于处理快速的电流信号,突出特点是转换速度快,电路结构简单,输入信号范围大,精度高,功耗低, 电路采用改进的TAC方法，用于处理快速的时间信号,利用高速DMOS开关，并优化控制逻辑时序，极大提高了测试精度。 实验室调试结果说明系统已能够适应物理实验的要求，并为最终建立一个完整的满足性能要求的前端电子学系统打下了坚实的基础

弱小信号处理电路的研制

无论是在核物理和粒子物理实验中，我们常常需要对探测到的弱小信号进行线性处理，以满足测量与分析的要求。为此，我们以弱小信号处理为题，开展了一些研究工作，我们先后开展的研究工作包括以下几个方面：1．弱电流测试仪的研制2．电荷前放的研制3．主放的研制这三种仪器我们将在沦文的第二、第三、第四章分别进行阐述。弱电流测试仪是一种便携式仪器（直接由22OV供电），它可以测量0．1 nA至100tlA范围的弱小电流（测量范围分六档可调）。它可以接受正或负极性直流输入电流。输出采用两种方式：表头直读和电压输出。电压输出最大为＋5V。电荷前置放大器具有电路结构简单、体积小（38m×45mm×80mfll）、输出信号上升时间快、噪声低、稳定性好等特点。主放成形时间常数分为四档：0．5 us、1 us、2 us、3 us：放大倍数分为两档：×10、×100；峰保持时间为6us左右（确保后续ADC所需的时间）；具有价格低、性能好、体积小的特点。在论文的第五部分论述的是根据在调试过程中出现的实际问题提出的解决办法，其中最主要的是对各种噪燕的解决办法。上述仪器研制完成后，在实际使用中，获得了满意的结果，受到好评。

信号采集与数据处理电路的研究

随着原子核科学技术的发展，无论是对原子核内部特征和规律的研究，或者是对原子核科学技术的应用，都需要对核辐射和原子核所携带的信息进行测量和分析研究。在核电子学测量系统中，核辐射探测器输出信号在经过各种信号处理电路后，通常都要变换成数字信号，再经过数据收集和处理，给出实验的最终结果，因此实验工作的任何进展都要求有相应的数据获取和处理系统的支持。根据实验的实际需求，我们以采集、处理探测器输出的信号为题，开展了一些研究工作，我们先后开展的研究工作包括以下儿个方面：1．激光功率计的变换与显示电路的研制2．基于PCI总线、嵌入8051单片机的计数卡的研制3．数据处理分析软件的设计这三部分的设计工作我们将在论文的第二、第三、第四章分别进行阐述。激光功率计的变换与显示电路把由激光功率计输出的模拟电压量变为数字脉冲输出，并且把该输出脉冲的频率实时定性显示出来。本电路测量精度高，线性好，工作稳定。我们研制开发的计数卡是一种很实用的计数卡，它是一种基于PCI总线，嵌入单片机的高速计数器，最大计数范围为109-1，最高的计数频率为20MHz。该计数卡计数范围宽，计数频率高，具有定时计数、重复计数等功能，可以取代常规的定标器，具有广泛的应用前景。数据处理分析软件包括下位机软件、上位机软件及通讯协议三部分，实现数据的采集与记录，并将读取的数据以Excel电子表格的形式存储，以备查询。下位机的软件采用KeilC编写，上位机软件采用Delphi编写。目前激光功率计的变换与显示电路和计数卡及相应的数据处理软件都设计、调试完成，已经投入使用，获得满意结果，受到好评。