Study of noncollinear quasi-phase matching optical parametric amplification with group-velocity matching based on periodically poled crystals

The properties of noncollinear optical parametric amplification (NOPA) based on quasi-phase matching of periodically poled crystals are investigated, under the condition that the group velocity matching (GVM) of the signal and idler pulses is satisfied. Our study focuses on the dependence of the gain spectrum upon the noncollinear angle, crystal temperature, and crystal angle with periodically poled KTiOPO4 (PPKTP), periodically poled LiNbO3 (PPLN), and periodically poled LiTaO3 (PPLT), and the NOPA gain properties of the three crystals are compared. Broad gain bandwidth exists above 85 nm at a signal wavelength of 800 nm with a 532 nm pump pulse, with proper noncollinear angle and grating period at a fixed temperature for GVM. Deviation from the group-velocity-matched noncollinear angle can be compensated by accurately tuning the crystal angle or temperature with a fixed grating period for phase matching. Moreover, there is a large capability of crystal angle tuning.

Phase control of gain and dispersion in an open V-type system

The control role of the relative phase between the probe and driving fields on gain, dispersion and populations in an open V-type three-level system with spontaneously generated coherence is studied. The result shows that by adjusting the value of the relative phase, the transformation between lasing with inversion and lasing without inversion (LWI) can be realized and high dispersion (refractive index) without absorption can be obtained. The shape and value range of the dispersion curve are similar to those of the gain curve, and this similarity is closely related to the relative phase. The effects of the atomic exit and injection rates and the incoherent pump rate on the control role of the relative phase are also analysed. It is found easier to get LWI by adjusting the value of the relative phase using the open system rather than the closed system, and using an incoherent pump rather than without using the incoherent pump. Moreover the open system can give a larger LWI gain than the closed system.

Upconversion luminescence and optical power limiting effect based on two- and three-photon absorption processes of ZnO crystal

Near-infrared to UV and visible upconversion luminescence was observed in single-crystalline ZnO under an 800 nm infrared femtosecond laser irradiation. The optical properties of the crystal reveal that the UV and VIS emission band are due to the exciton transition (D0X) bound to neutral donors and the deep luminescent centers in ZnO, respectively. The relationship between the upconversion luminescence intensity and the pump power of the femtosecond laser reveals that the UV emission belongs to three-photon sequential band-to-band excitation and the VIS emission belongs to two-photon simultaneous defect-absorption induced luminescence. A saturation phenomenon and polarization-dependent effect are also observed in the upconversion process of ZnO. A very good optical power limiting performance at 800 nm has been demonstrated. The two- and three-photon absorption coefficients of ZnO crystal were measured to be 0.2018 cm GW(-1) and 7.102 x 10(-3) cm(3) GW(-2), respectively. The two- and three-photon cross sections were calculated to be 1.189 x 10(-51) cm(4) s and 1.040 x 10(-80) cm(6) s(2), respectively. (c) 2007 Elsevier B.V. All rights reserved.

Multiphoton-excited upconversion luminescence of Nd : YVO4

Fluorescence spectra of Nd: YVO4 under excitation of a continuous wave (CW) diode laser and a femtosecond laser at 800nm were investigated. It was found that Nd: YVO4 shows different upconversion and downconversion luminescencent behaviors when excited by the diode laser and the femtosecond laser. The dependence of the upconversion luminescence intensity on the pump power of the femtosecond laser was discussed. The populations of the upper energy levels for upconversion and downconversion luminescence were calculated based on the Bloch equations. The calculations agree well with the experimental results. (c) 2007 Optical Society of America.

A fundamental approach to phase noise reduction in hybrid Si/III-V lasers

Spontaneous emission into the lasing mode fundamentally limits laser linewidths. Reducing cavity losses provides two benefits to linewidth: (1) fewer excited carriers are needed to reach threshold, resulting in less phase-corrupting spontaneous emission into the laser mode, and (2) more photons are stored in the laser cavity, such that each individual spontaneous emission event disturbs the phase of the field less. Strong optical absorption in III-V materials causes high losses, preventing currently-available semiconductor lasers from achieving ultra-narrow linewidths. This absorption is a natural consequence of the compromise between efficient electrical and efficient optical performance in a semiconductor laser. Some of the III-V layers must be heavily doped in order to funnel excited carriers into the active region, which has the side effect of making the material strongly absorbing.

This thesis presents a new technique, called modal engineering, to remove modal energy from the lossy region and store it in an adjacent low-loss material, thereby reducing overall optical absorption. A quantum mechanical analysis of modal engineering shows that modal gain and spontaneous emission rate into the laser mode are both proportional to the normalized intensity of that mode at the active region. If optical absorption near the active region dominates the total losses of the laser cavity, shifting modal energy from the lossy region to the low-loss region will reduce modal gain, total loss, and the spontaneous emission rate into the mode by the same factor, so that linewidth decreases while the threshold inversion remains constant. The total spontaneous emission rate into all other modes is unchanged.

Modal engineering is demonstrated using the Si/III-V platform, in which light is generated in the III-V material and stored in the low-loss silicon material. The silicon is patterned as a high-Q resonator to minimize all sources of loss. Fabricated lasers employing modal engineering to concentrate light in silicon demonstrate linewidths at least 5 times smaller than lasers without modal engineering at the same pump level above threshold, while maintaining the same thresholds.

Electromagnetically induced negative refractive index in a V-type four-level atomic system

We propose a scheme for realizing negative refractive index in a V-type four-level atomic system. It is shown that the negative refractive index can be achieved in a wide frequency band based on the effect of quantum coherence. It is also found that the frequency band of negative refractive index and the absorption property of left-handed material are manipulated by the pump and control fields. Furthermore, left-handed material with reduced absorption is possible by choosing appropriate parameters. (c) 2006 Elsevier B.V. All rights reserved.

Mechanisms of femtosecond laser-induced damage in magnesium fluoride

We studied the single-shot damage in magnesium fluoride irradiated by 800 nm femtosecond (fs) laser. The dependence of damage thresholds on the laser pulse durations from 60 to 750 fs was measured. The pump-probe measurements were carried out to investigate the time-resolved electronic excitation processes. A coupled dynamic model was applied to study the microprocesses in the interaction between fs laser and magnesium fluoride. The results indicate that both multiphoton ionization and avalanche ionization play important roles in the femtosecond laser-induced damage in MgF2. (C) 2006 Elsevier Ltd. All rights reserved.

周期性极化铌酸锂晶体中半非共线型宽带光学参变放大理论研究

基于周期性极化铌酸锂晶体(PPLN)的准相位匹配光参变放大过程,通过倾斜周期极化铌酸锂晶体中极化域(极化光栅)一定角度,实现了介于共线匹配方式和非共线匹配方式之间的一种半非共线型准相位匹配方式,并以该匹配方式下的各光矢量几何关系得出相位匹配曲线,找到在特定抽运光和信号光波长下能获得宽带增益放大的周期极化长度。并研究其极化倾斜角度与温度特性。模拟计算表明,在合适的角度与温度条件下,该方式可以532 nm抽运光抽运的信号光在800 nm和1064 nm处均获得宽带光参变放大。

Luminescence properties of electron-hole-droplets in pure and doped germanium

This work contains 4 topics dealing with the properties of the luminescence from Ge.

The temperature, pump-power and time dependences of the photoluminescence spectra of Li-, As-, Ga-, and Sb-doped Ge crystals were studied. For impurity concentrations less than about 10¹⁵cm^-3, emissions due to electron-hole droplets can clearly be identified. For impurity concentrations on the order of 10¹⁶cm^-3, the broad lines in the spectra, which have previously been attributed to the emission from the electron-hole-droplet, were found to possess pump-power and time dependent line shape. These properties show that these broad lines cannot be due to emission of electron-hole-droplets alone. We interpret these lines to be due to a combination of emissions from (1) electron-hole- droplets, (2) broadened multiexciton complexes, (3) broadened bound-exciton, and (4) plasma of electrons and holes. The properties of the electron-hole-droplet in As-doped Ge were shown to agree with theoretical predictions.

The time dependences of the luminescence intensities of the electron-hole-droplet in pure and doped Ge were investigated at 2 and 4.2°K. The decay of the electron-hole-droplet in pure Ge at 4.2°K was found to be pump-power dependent and too slow to be explained by the widely accepted model due to Pokrovskii and Hensel et al. Detailed study of the decay of the electron-hole-droplets in doped Ge were carried out for the first time, and we find no evidence of evaporation of excitons by electron-hole-droplets at 4.2°K. This doped Ge result is unexplained by the model of Pokrovskii and Hensel et al. It is shown that a model based on a cloud of electron-hole-droplets generated in the crystal and incorporating (1) exciton flow among electron-hole-droplets in the cloud and (2) exciton diffusion away from the cloud is capable of explaining the observed results.

It is shown that impurities, introduced during device fabrication, can lead to the previously reported differences of the spectra of laser-excited high-purity Ge and electrically excited Ge double injection devices. By properly choosing the device geometry so as to minimize this Li contamination, it is shown that the Li concentration in double injection devices may be reduced to less than about 10¹⁵cm^-3 and electrically excited luminescence spectra similar to the photoluminescence spectra of pure Ge may be produced. This proves conclusively that electron-hole-droplets may be created in double injection devices by electrical excitation.

The ratio of the LA- to TO-phonon-assisted luminescence intensities of the electron-hole-droplet is demonstrated to be equal to the high temperature limit of the same ratio of the exciton for Ge. This result gives one confidence to determine similar ratios for the electron-hole-droplet from the corresponding exciton ratio in semiconductors in which the ratio for the electron-hole-droplet cannot be determined (e.g., Si and GaP). Knowing the value of this ratio for the electron-hole-droplet, one can obtain accurate values of many parameters of the electron-hole-droplet in these semiconductors spectroscopically.

Optical properties of excited silicon and germanium at low temperatures

Part I of this thesis deals with 3 topics concerning the luminescence from bound multi-exciton complexes in Si. Part II presents a model for the decay of electron-hole droplets in pure and doped Ge.

Part I.

We present high resolution photoluminescence data for Si doped With Al, Ga, and In. We observe emission lines due to recombination of electron-hole pairs in bound excitons and satellite lines which have been interpreted in terms of complexes of several excitons bound to an impurity. The bound exciton luminescence in Si:Ga and Si:Al consists of three emission lines due to transitions from the ground state and two low lying excited states. In Si:Ga, we observe a second triplet of emission lines which precisely mirror the triplet due to the bound exciton. This second triplet is interpreted as due to decay of a two exciton complex into the bound exciton. The observation of the second complete triplet in Si:Ga conclusively demonstrates that more than one exciton will bind to an impurity. Similar results are found for Si:Al. The energy of the lines show that the second exciton is less tightly bound than the first in Si:Ga. Other lines are observed at lower energies. The assumption of ground state to ground-state transitions for the lower energy lines is shown to produce a complicated dependence of binding energy of the last exciton on the number of excitons in a complex. No line attributable to the decay of a two exciton complex is observed in Si:In.

We present measurements of the bound exciton lifetimes for the four common acceptors in Si and for the first two bound multi-exciton complexes in Si:Ga and Si:Al. These results are shown to be in agreement with a calculation by Osbourn and Smith of Auger transition rates for acceptor bound excitons in Si. Kinetics determine the relative populations of complexes of various sizes and work functions, at temperatures which do not allow them to thermalize with respect to one another. It is shown that kinetic limitations may make it impossible to form two-exciton complexes in Si:In from a gas of free excitons.

We present direct thermodynamic measurements of the work functions of bound multi-exciton complexes in Al, B, P and Li doped Si. We find that in general the work functions are smaller than previously believed. These data remove one obstacle to the bound multi-exciton complex picture which has been the need to explain the very large apparent work functions for the larger complexes obtained by assuming that some of the observed lines are ground-state to ground-state transitions. None of the measured work functions exceed that of the electron-hole liquid.

Part II.

A new model for the decay of electron-hole-droplets in Ge is presented. The model is based on the existence of a cloud of droplets within the crystal and incorporates exciton flow among the drops in the cloud and the diffusion of excitons away from the cloud. It is able to fit the experimental luminescence decays for pure Ge at different temperatures and pump powers while retaining physically reasonable parameters for the drops. It predicts the shrinkage of the cloud at higher temperatures which has been verified by spatially and temporally resolved infrared absorption experiments. The model also accounts for the nearly exponential decay of electron-hole-droplets in lightly doped Ge at higher temperatures.

较高阶非线性抽运-探测过程中的空间效应

在飞秒抽运一探测光谱技术中，空间分辨的探测光信号反映了在不同空间位置的材料的非线性效应。当抽运光强度增大时，探测光信号中会出现明显的高阶特别是五阶非线性效应。利用劈裂算子方法直接解决了一维非线性传播方程的问题。在数值模拟中，研究了在不同抽运强度和位置下的抽运一探测过程中的五阶非线性效应。在足够高的抽运场下，探测信号出现清晰的振荡，显示了三阶和五阶非线性效应之间的干涉。当空间位置离抽运场中心足够远时，五阶比三阶非线性效应的衰减快得多，对其物理机制和趋势进行了定性的讨论。

体布拉格光栅外腔半导体激光器光谱特性研究

用体布拉格光栅(VBG)作为反馈元件与瓦级半导体激光器(LD)以及快轴准直柱透镜构成一个可以将半导体激光器的工作波长稳定在体布拉格光栅布拉格波长处的外腔激光器。测量了体布拉格光栅外腔激光器的波长稳定性与其工作电流、热汇温度、激光束准直装置等因素的关系。分析了波长稳定效果与半导体激光器增益谱特性、外腔结构参量等因素的关系。研究表明,在相同的工作电流、热汇温度下,当准直柱透镜直径为0.4 mm时的波长稳定效果较好;在此情况下,当热汇温度控制在30 ℃,工作电流从0.5 A增加到1.5 A的测量范围内,以及当工

Quantum squeezing of motion in a mechanical resonator

Quantum mechanics places limits on the minimum energy of a harmonic oscillator via the ever-present "zero-point" fluctuations of the quantum ground state. Through squeezing, however, it is possible to decrease the noise of a single motional quadrature below the zero-point level as long as noise is added to the orthogonal quadrature. While squeezing below the quantum noise level was achieved decades ago with light, quantum squeezing of the motion of a mechanical resonator is a more difficult prospect due to the large thermal occupations of megahertz-frequency mechanical devices even at typical dilution refrigerator temperatures of ~ 10 mK.

Kronwald, Marquardt, and Clerk (2013) propose a method of squeezing a single quadrature of mechanical motion below the level of its zero-point fluctuations, even when the mechanics starts out with a large thermal occupation. The scheme operates under the framework of cavity optomechanics, where an optical or microwave cavity is coupled to the mechanics in order to control and read out the mechanical state. In the proposal, two pump tones are applied to the cavity, each detuned from the cavity resonance by the mechanical frequency. The pump tones establish and couple the mechanics to a squeezed reservoir, producing arbitrarily-large, steady-state squeezing of the mechanical motion. In this dissertation, I describe two experiments related to the implementation of this proposal in an electromechanical system. I also expand on the theory presented in Kronwald et. al. to include the effects of squeezing in the presence of classical microwave noise, and without assumptions of perfect alignment of the pump frequencies.

In the first experiment, we produce a squeezed thermal state using the method of Kronwald et. al.. We perform back-action evading measurements of the mechanical squeezed state in order to probe the noise in both quadratures of the mechanics. Using this method, we detect single-quadrature fluctuations at the level of 1.09 +/- 0.06 times the quantum zero-point motion.

In the second experiment, we measure the spectral noise of the microwave cavity in the presence of the squeezing tones and fit a full model to the spectrum in order to deduce a quadrature variance of 0.80 +/- 0.03 times the zero-point level. These measurements provide the first evidence of quantum squeezing of motion in a mechanical resonator.

Optimization of the multiwavelength erbium-doped fiber laser in a unidirectional cavity without an isolator

A highly uniform multiwavelength erbium-doped fiber ring laser with an intracavity sine phase modulator is demonstrated. The flat output spectrum is achieved by optimizing the cavity structure, modulation amplitude, and frequency of the sine phase modulator. Fifteen lasing lines with wavelength spacing of 0.9 nm appear simultaneously and stably with power differences less than 2 dB and side-mode suppression ratio higher than 32 dB. In addition, the proposed cavity can support unidirectional operation without optical isolators. An output power difference of about 20 dB is realized between the counterclockwise and clockwise directions, which is almost independent of the pump power and lasing wavelengths. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Multibeam coupling in photorefractive SBN:Ce

Theoretical and experimental results are presented for simultaneous multibeam coupling in photorefractive SBN:Ce. Within a single crystal, multiple signals are amplified through a coupling process that employs a single pump. The coupling gain of each signal results from coupling both between the pump and the signal and between different signals. The amount of gain that each signal receives is dependent on the intensity of the incident signal; thus a competition for the gain exists among the various signals.