Y2O3 stabilized ZrO2 thin films deposited by electron-beam evaporation: Optical properties, structure and residual stresses

This paper describes the preparation and the characterization Of Y2O3 stabilized ZrO2 thin films produced by electric-beam evaporation method. The optical properties, microstructure, surface morphology and the residual stress of the deposited films were investigated by optical spectroscopy, X-ray diffraction (XRD), scanning probe microscope and optical interferometer. It is shown that the optical transmission spectra of all the YSZ thin films are similar with those of ZrO2 thin film, possessing high transparency in the visible and near-infrared regions. The refractive index of the samples decreases with increasing of Y2O3 content. The crystalline structure of pure ZrO2 films is a mixture of tetragonal phase and monoclinic phase, however, Y2O3 stabilized ZrO2 thin films only exhibit the cubic phase independently of how much the added Y2O3 content is. The surface morphology spectrum indicates that all thin films present a crystalline columnar texture with columnar grains perpendicular to the substrate and with a predominantly open microporosity. The residual stress of films transforms tensile from compressive with the increasing Of Y2O3 molar content, which corresponds to the evolutions of the structure and packing densities. (C) 2008 Elsevier Ltd. All rights reserved.

沉积温度对氧化钇稳定氧化锆薄膜残余应力的影响

采用自制掺摩尔分数12%的Y2O3的ZrO2混合颗粒料为原料,在不同的沉积温度下用电子束蒸发方法沉积氧化钇稳定氧化锆(YSZ)薄膜样品。利用ZYGOMarkⅢ-GPI数字波面干涉仪对氧化钇稳定氧化锆薄膜的残余应力进行了研究,讨论了沉积温度对残余应力的影响。实验结果表明:随沉积温度升高,氧化钇稳定氧化锆薄膜中残余应力状态由张应力变为压应力,且压应力值随着沉积温度升高而增大;用X射线衍射仪表征了不同沉积温度下氧化钇稳定氧化锆薄膜的微观结构,探讨了薄膜微观结构与其应力的对应关系,并对比了纯ZrO2薄膜表现出的应力状态。

Efficiency improvement of organic light-emitting diodes using 8-hydroxy-quinolinato lithium as an electron injection layer

Organic light-emitting diodes (OLEDs) using tris-(8-hydroxy-quinolinato) aluminum (Alq(3)) as an emitter, 8-hydroxy-quinolinato lithium (Liq) as an electron injection layer, were prepared. Experimental results show that the efficiency of device with Liq is three times higher than that without Liq. The device using Liq as an injection layer is less sensitive in efficiency to the Liq thickness than that using LiF. In addition to the Alq3 based devices, Liq is also very effective as an electron injection layer for 4,4'-bis(2,2-diphenylvinyl)-1,1'-biphenyl based blue OLED and poly (2-methoxy,5-(2-ethyl-hexyloxy)-1,4-phenylenevinylene) based orange polymer OLED. (c) 2004 Elsevier B.V. All rights reserved.

Laser micromachining of chromium-rich die steels under controlled atmospheres

Diode-pumped, solid-state (DPSS) lasers with multiwavelength capability have become an industrial reality in recent years. Multiwavelength capability allows DPSS lasers to perform operations such as micromachining in a variety of engineering materials such as ceramics, metals and polymers. A series of experiments was performed to investigate how shielding gas environments and gas pressure affect the ability to cut and machine chromium-rich die steels. Results from this study reveal that traditional plasma-controlling gases have a detrimental e�ffect on the surface morphology of micromachined components.

Análise e identificação de produtos do catabolismo de heme nas formas epimastigotas de Trypanosoma cruzi

O Trypanosoma cruzi, agente etiológico da doença de Chagas, possui um ciclo de vida complexo, deve lidar com diversas condições do ambiente e depende dos hospedeiros para suprir suas necessidades nutricionais. Uma delas é a necessidade de captar a molécula de heme (Fe-protoporfirina IX) que será utilizada como fator de crescimento. Os mecanismos envolvendo o metabolismo de heme são cruciais para a sobrevivência do T. cruzi pois o parasito não possui várias enzimas de biossíntese dessa porfirina e o heme livre pode apresentar citotoxicidade para célula. Na tentativa de perseguir o destino final do heme no parasito, nós estudamos essa via inexplorada no T. cruzi. Nessa tese, nós demonstramos que epimastigotas cultivados com heme, produziram os compostos, α-meso hidroxiheme, verdoheme e biliverdina (identificados por HPLC acoplado á espectrofotômetria). Além disso, nós observamos através de análise dos extratos de epimastigotas no espectrômetro de massas (LQT Orbitrap), espécies iônicas de m/z 583,4 e m/z 619,3. A fragmentação subsequente desses íons originaram espécies filhas típicas das moléculas de biliverdina e verdoheme, respectivamente. Nós observamos também, espécies iônicas de m/z 1397,4 e m/z 1135,4. A fragmentação dessas espécies produziram íons, sendo um deles com a mesma massa molecular de heme (m/z 616,3). Essa espécie iônica por sua vez, gerou fragmentos iônicos idênticos a uma molécula de heme, confirmando que esses intermediários são produtos da modificação da porfirina. Baseado nesses resultados, nós propomos um modelo onde o catabolismo de heme em T. cruzi, envolveria a conjugação da bis(glutationil)spermina, um derivado da tripanotiona presente em tripanossomatídeos, à porfirina (m/z 1137,4), seguido da remoção de dois resíduos de ácidos glutâmicos (m/z 1135,4). Embora o significado bioquímico e fisiológico da adição desse resíduo tiol na molécula de heme ainda é pouco compreendido, alguns trabalhos demonstram a abilidade desses compostos em ligar na porfirina, sem contar também, que esse heme conjugado poderia resultar em uma forma efetiva de prevenção de danos à membrana e a célula ocasionados pelo acúmulo de heme livre. Em conjunto, esses resultados fornecem novas abordagens do metabolismo de heme em T. cruzi, revelando possíveis alvos de intervenção quimioterápica futuros. Nossa proposta está direcionada para uma via ativa de catabolismo de heme que inclui a adição de grupos tiol (derivado da tripanotiona) à heme e a clivagem do anel porfirínico originando a molécula de biliverdina.

Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes

The promising theoretical properties of diamond, together with the recent advances in producing high-quality single crystal diamond substrates, have increased the interest in using diamond in power electronic devices. This paper presents numerical and experimental off-state results for a diamond Schottky barrier diode (SBD), one of most studied unipolar devices in diamond. Finding a suitable termination structure is an essential step towards designing a high voltage diamond device. The ramp oxide structure shows very encouraging electronic performance when used to terminate diamond SBDs. High-k dielectrics are also considered in order to further improve the reliability and electrical performance of the structure. © 2007 Elsevier B.V. All rights reserved.

Impact of high-k dielectrics on breakdown performances of SiC and diamond Schottky diodes

This paper presents a comparison between SiC and diamond Schottky barrier diodes using the oxide ramp termination. The influences of the dielectric thickness and relative permittivity on the diode's electrical performance are investigated. Typical commercial drift layer parameters are used for this study. The extension of the space charge area throughout the drift region and the current distribution at breakdown are shown. The efficiency of the termination is also evaluated for both SiC and diamond diodes. © (2009) Trans Tech Publications, Switzerland.

Single crystal diamond schottky diodes - Practical design considerations for enhanced device performance

Novel alternatives to the conventional single crystal diamond Schottky metal-intrinsic-p+ (m-i-p+) diode is presented in this work. The conduction mechanism of the device is analysed and structural modifications to enhance its performance are proposed. The periodic inclusion of highly p+ doped thin δ-layers and p+ spots in the intrinsic voltage blocking layer of the diode drastically improves the forward performance of these devices enhancing the forward current of the device by a factor of 10 - 17 with a maximum forward current density of ̃ 40 A/cm 2 for a 2 kV device.

High power short pulse generation at high repetition rate from InGaN violet laser diodes

The generation of 22 ps pulses with peak powers of 0.74 W by a gain-switched InGaN violet laser diode is reported. Significant pulse width dependence on repetition rate is observed. © 2011 OSA.