The influence of the microstructure evolution on the surface morphology in the annealing process of helium-implanted spinel

Single-crystalline spinel (MgAl2O4) specimens were implanted with helium ions of 100 keV at three successively increasing fluences of (0.5, 2.0 and 8.0) x 10(16) ions/cm(2) at room temperature. The specimens were subsequently annealed in vacuum at different temperatures ranging from 500 to 1100 degrees C. Different techniques, including Fourier transformed infrared spectroscopy (FTIR), thermal desorption spectrometry (TDS), atomic force microscopy (AFM) and scanning electron microscopy (SEM) were used to investigate the specimens, It was found that the absorbance peak in the FTIR due to the stretching vibration of the Al-O bond shifts to smaller wave numbers with increasing fluence, shifting back to larger wave numbers with an increase of annealing temperature. The absorbance peak shift has a linear relationship with the fluence increase in the as-implanted state, while it does not have a linear relationship with the fluence increase after the annealing process. Surface deformation occurred in the specimens implanted with fluences of 2.0 and 8.0 x 10(16) ions/cm(2) in the annealing process. The phenomena described above can be attributed to differences in defect formation in the specimens. (C) 2008 Elsevier B.V. All rights reserved.

Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator

In the present work, a Cz-Silicon wafer is implanted with helium ions to produce a buried porous layer, and then thermally annealed in a dry oxygen atmosphere to make oxygen transport into the cavities. The formation of the buried oxide layer in the case of internal oxidation (ITOX) of the buried porous layer of cavities in the silicon sample is studied by positron beam annihilation (PBA). The cavities are formed by 15 keV He implantation at a fluence of 2 x 10(16) cm(-2) and followed by thermal annealing at 673 K for 30 min in vacuum. The internal oxidation is carried out at temperatures ranging from 1073 to 1473 K for 2 h in a dry oxygen atmosphere. The layered structures evolved in the silicon are detected by using the PBA and the thicknesses of their layers and nature are also investigated. It is found that rather high temperatures must be chosen to establish a sufficient flux of oxygen into the cavity layer. On the other hand high temperatures lead to coarsening the cavities and removing the cavity layer finally.

Development of an intermediate energy heavy-ion micro-beam irradiation system

The micro-beam irradiation system, which focuses the beam down to micron order and precisely delivers a predefined number of ions to a predefined spot of micron order, is a powerful tool for radio-biology, radio-biomedicine and micromachining. The Institute of Modern Physics of Chinese Academy of Sciences is developing a heavy-ion microbeam irradiation system up to intermediate energy. Based on the intermediate and low energy beam provided by Heavy Ion Research Facility of Lanzhou, the micro-beam system takes the form of the magnetic focusing. The heavy-ion beam is conducted to the basement by a symmetrical achromatic system consisting of two vertical bending magnets and a quadrupole in between. Then a beam spot of micron order is formed by a magnetic triplet quadrupole of very high gradient. The sample can be irradiated either in vacuum or in the air. This system will be the first opening platform capable of providing heavy ion micro-beam, ranging from low (10MeV/u) to intermediate energy (100MeV/u), for irradiation experiment with positioning and counting accuracy. Target material may be biology cell, tissue or other non-biological materials. It will be a help for unveiling the essence of heavy-ion interaction with matter and also a new means for exploring the application of heavy-ion irradiation.

Modification of Fe/Cu multilayers under 400 keV Xe20+ irradiation

Two kinds of Fe/Cu multilayers with different modulation wavelength were deposited on cleaved Si(100) substrates and then irradiated at room temperature using 400 keV Xe20+ in a wide range of irradiation fluences. As a comparison, thermal annealing at 300-900 degrees C was also carried out in vacuum. Then the samples were analyzed by XRD and the evolution of crystallite structures induced by irradiation was investigated. The obtained XRD patterns showed that, with increase of the irradiation fluence, the peaks of Fe became weaker, the peaks related to Cu-based fcc solid solution and Fe-based bcc solid solution phase became visible and the former became strong gradually. This implied that the intermixing at the Fe/Cu interface induced by ion irradiation resulted in the formation of the new phases which could not be achieved by thermal annealing. The possible intermixing mechanism of Fe/Cu multilayers induced by energetic ion irradiation was briefly discussed.

Progress of XHV technology at particle accelerators

Recent vacuum system development with an XHV condition for the particle accelerators is briefly described. The progress of selecting and treatment of the materials used in XHV systems is introduced, and the choice of the main pump for an XHV system and some new pumping method are presented. Some leak detection experiences both for the superconducting and warm vacuum systems are recommended and the status of XHV measurement and the gauge calibration are introduced.

Research for a clean and large throughput differential pumping system

The research is to design a differential pumping system not only to achieve the pressure transition with a large throughput, but also to achieve a clean system without back-oil. In the paper, the pressure in differential stages is calculated; the differential pumping system design and equipment choice are introduced; the tests of Molecular/Booster Pump (MBP), a new kind of molecular-drag pump with large throughout and clean vacuum are described and the system experimental result and analysis are presented.

Preliminary results of the updated LECR2 source-LECR2M

The Latest developed LECR2M (Lanzhou ECR No. 2 Modified) source is the updated one of LECR2 (Lanzhou ECR No. 2) source at IMP. It has been assembled on the low energy ion beam experimental platform to produce MCI beams for atomic physics and material physics experimental research. In our updating program, the structure of injection and extraction components has been modified to make the source structure more simple and effective. The hexapole magnet has also been replaced by a new hexapole magnet with higher radial field and larger inner diameter. With this updating, stronger magnetic field confinement of the ECR plasma is possible and better base vacuum condition is also achieved. LECR2M was designed to be operated at 14.5GHz. During the preliminary test, 1.3emA O6+ beam was extracted with the injected rf power of 1.1kW. The source has been used to deliver intense MCI beams for different experiments. After some discussion of the main features of this newly updated source, some of the typical commissioning test results of LECR2M will be presented.

Physical design of the new extraction system for SFC

The HIRFL (Heavy Ion Research Facility at Lanzhou) is a cyclotron complex. Its injector is a cector focusing cyclotron with K=69. Since the HIRFL started the operation in 1989, two bigger items of improvements have been finished, the species and intensity of the accelerated particles are increased obviously. But due to the lower extraction efficiency of the SFC, on one hand, a lot of beam lost, and on other hand, outgas from the surface of the electrostatic deflector is serious because of beam hitting. Even sometimes the vacuum press is destroyed. In the paper a new physical design is made to get an extraction system of the SFC with a higher efficiency.

The annealing behavior of Cu nanoparticles in Ar-ion implanted spinel

Magnesium aluminate spinel crystals (MgAl2O4 (1 1 0)) deposited with 30 nm Cu film on surface were implanted with 110 key Ar-ions to a fluence of 1.0 x 10(17) ions/cm(2) at 350 degrees C, and then annealed in vacuum condition at the temperature of 500, 600, 700, 800 and 900 degrees C for 1 h, respectively. Ultraviolet-visible spectrometry (UV-VIS), scanning electron microscopy (SEM), Rutherford backscattering (RBS) and transmission electron microscopy (TEM) were adopted to analyze the specimens. After implantation, the appearance of surface plasmon resonance (SPR) absorbance peak in the UV-VIS spectrum indicated the formation of Cu nanoparticles, and the TEM results for 500 degrees C also confirmed the formation of Cu nanoparticles at near-surface region. In annealing process, The SPR absorbance intensity increased at 500 and 700 degrees C, decreased with a blue shift of the peak position at 600 and 800 degrees C, and the peak disappeared at 900 degrees C. The SPR absorbance intensity evolution with temperature was discussed combined with other measurement results (RBS, SEM and TEM). (C) 2010 Elsevier B.V. All rights reserved.

Structural and optical properties of 6H-SiC helium-implanted at 600 K

Single crystals of 6H-SiC were implanted at 600 K with 100 key He ions to three successively fluences and subsequently annealed at different temperatures ranging from 873 to 1473 K in vacuum. The recovery of lattice damage was investigated by different techniques including Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy and Fourier transform infrared spectroscopy. All three techniques showed that the damage induced by helium ion implantation in the lattice is closely related to the fluence. Rutherford backscattering spectrometry/channeling data on high temperature implantations suggest that for a fluence of 3 x 10(16) He+/cm(2), extended defects are created by thermal annealing to 1473 K. Apart from a well-known intensity decrease of scattering peaks in Raman spectroscopy it was found that the absorbance peak in Fourier transform infrared spectroscopy due to the stretching vibration of Si-C bond shifted to smaller wave numbers with increasing fluence, shifting back to larger wave numbers with increasing annealing temperature. These phenomena are attributed to different lattice damage behavior induced by the hot implantation process, in which simultaneous recovery was prevailing. (C) 2010 Elsevier B.V. All rights reserved.

Observation of charge-dependent azimuthal correlations and possible local strong parity violation in heavy-ion collisions

Parity (P)-odd domains, corresponding to nontrivial topological solutions of the QCD vacuum, might be created during relativistic heavy-ion collisions. These domains are predicted to lead to charge separation of quarks along the orbital momentum of the system created in noncentral collisions. To study this effect, we investigate a three-particle mixed-harmonics azimuthal correlator which is a P-even observable, but directly sensitive to the charge-separation effect. We report measurements of this observable using the STAR detector in Au + Au and Cu + Cu collisions at root s(NN) = 200 and 62 GeV. The results are presented as a function of collision centrality, particle separation in rapidity, and particle transverse momentum. A signal consistent with several of the theoretical expectations is detected in all four data sets. We compare our results to the predictions of existing event generators and discuss in detail possible contributions from other effects that are not related to P violation.

Enhanced photoluminescence of Ar+ implanted sapphire before and after annealing

In this paper, we studied the changes in the photoluminescence spectra of the Ar+ ion implanted monocrystalline sapphire annealed at different atmospheres and different temperatures. Single crystals of sapphire (Al2O3) with the (1 0 (1) over bar 0) (m-samples) orientation were implanted at 623 K with 110 keV Ar+ ions to a fluence of 9.5 x 10(16) ions/cm(2). Photoluminescence measurement of the as-implanted sample shows a new emission band at 506 nm, which is attributed to the production of interstitial Al atoms. The intensity of emission band at 506 nm first increased then decreased with increase in annealing temperature. For the same annealing temperature, the intensity of PL peak at 506 nm of the sample annealed in air was higher than the sample annealed in vacuum. The experimental results show that the intensity of the PL peak at 506 nm of Ar-implanted sapphire can be enhanced by subsequent annealing with an enhancement of nearly 20 times. The influence of thermal annealing of the Ar-implanted samples on the new 506 nm emission band was discussed. (C) 2009 Elsevier B.V. All rights reserved.

多级差分真空系统设计、计算和调试

兰州重离子加速器（HIRFL）后束运线TR2实验终端，是一个用于开展超重核研究的实验终端，实验系统工作时要求充入氦气，压强为100Pa左右，而后束运线上真空度要求为10E-6Pa，所以如何实现从实验终端充气压强为100Pa到后束运线上压强为10E-6Pa真空度的顺利过渡便成了一个重要课题。 本文从差分真空系统的原理着手，通过对差分系统材料、测量元件以及排气系统的选择，排气性能测试等，设计了TR2实验终端差分真空系统——四级差分真空系统。通过安装测试，将理论计算值与静态测试结果做了比较，引出了差分系统中充气气流效应的概念，并对该系统中充气气流效应进行定量和定性的分析，改进了差分真空系统的设计。 本文用真空系统中气体的流动与电子学电路中电子的流动相等效的思路，把四级差分真空系统等效成电子学电路，并用PSpice软件仿真计算四级差分真空系统中各级差分真空室的压力分布，并与实验结果作比较。 理论计算和静态测试结果均表明，TR2实验终端利用四级差分真空系统，可以实现从100Pa到后束运线上10E-6Pa真空度的顺利过渡

在真空室内表面形成非蒸发吸气剂膜（TiZrV）抽气层的特性研究

TiZrV合金吸气剂材料能够对气体分子进行化学吸附，并且最低激活温度Ta只有180℃，可以广泛地应用在各种设备中，例如粒子加速器，惰性气体净化装置，H2等离子体净化装置，托克马克中的H2回收装置。本论文通过计算设计，建立了二极直流磁控溅射系统，在国内首次对加速器细长真空管道进行了TiZrV膜层溅射沉积，使其成为管道泵。测试结果表明真空单元在TiZrVNEG处理后极限压力降低，同时压力分布梯度过大的问题得以解决；在镀膜系统的结构设计中创造性地加入了可压缩波纹管，解决了细长管道镀膜中阴极下垂引起短路及溅射距离不等的难题，使阴极始终处于管道中心，保证了镀膜的均匀性。论文对沉积膜层从基体材料、基体的表面粗糙度、基体温度、膜层成分对激活温度和真空性能的影响等方面进行了研究。对于理想状态下的磁控溅射，不同的基体材料会导致不同的膜层形态，但是具有相同的晶体结构和激活温度。通过沉积在粗糙的铜基材来增大表面粗糙度，不能加速激活过程，但明显增大了抽速和表面吸附容量。将溅射沉积过程中的基体温度（Ts）升高到250℃可以在不改变晶体结构的同时增大膜层的表面粗糙度。对于获得理想的粘附系数和表面吸气容量来说，基体温度Ts=250℃。使用粗糙的基体材料并在镀膜时将基体温度Ts保持在250℃可以获得最大的表面吸气容量。最大的抽速获得通过加热膜层到250℃。温度进一步升高，抽速开始下降

CSR真空控制系统的研究

本论文主要解决CSR真空系统的控制实现与连锁保护问题。 HIRFL-CSR（Heavy Ion Research Facility at LanZhou-Cooling Storage Ring兰州重离子冷却储存环）是国家重大科学工程。为了保证CSR正常运行，超高真空系统的平均真空度必须达到6×10-9Pa，超高的真空度来之不易，CSR上任何一处真空设备发生故障，就会破坏真空度，所以CSR必须具有响应速度快、安全可靠，稳定性好的真空控制与连锁保护系统。 HIRFL-CSR真空设备有离子泵电源、分子泵、钛升华泵、阀门、真空计等。分子泵只在粗抽时使用，钛升华泵为间歇升华，因此不需要监控。需要显示和控制的设备为离子泵电源、真空计和真空阀门。通过对CSR上每个真空计的真空度数据的监测和真空阀门状态的采集，一旦真空度降低到一定阈值，立即关闭相应位置阀门（保护真空）,并给出故障报警，从而实现真空系统的连锁保护。 真空控制系统以嵌入式处理器ARM、复杂可编程逻辑器件CPLD和微控制器MSP430为核心，实现了远程数据采集、数据显示和自动控制等功能。本系统可以进行现场监控与调试，也可以通过集成的100Mbps以太网接口电路进行远程监测与控制，CSR上各处真空度和真空阀门状态自动传送到中央控制中心，中控中心也可以发送命令查询当前真空设备状态和各种读数。 本文主要介绍了基于ARM、CPLD和MSP430的嵌入式真空控制系统的设计与实现。内容主要包括(1)系统各部分硬件电路设计与真空控制功能实现 ，硬件系统调试 。(2)嵌入式uClinux操作系统构建和在其上进行的应用程序，设备驱动程序，串行通信程序的开发。（3）CPLD的VHDL程序和MSP430的C430程序设计。 本文目的是解决CSR真空控制系统问题，但对于许多远程数据采集与控制等问题的解决有重要参考价值