Non-resonant perturbation formula for interaction impedance measurement for a folded-waveguide SWS

The non-resonant perturbation formula for the measurement of interaction impedance of a folded-waveguide slow-wave structure was derived for the relevant electromagnetic field configuration at the axis of the beam-hole of the structure. Efficacy of the theory was benchmarked through virtual measurement using 3D electromagnetic modeling in CST-studio.

Bubble size measurement in a gas-liquid ejector for a sodium chloride-air system

A high speed photographic technique has been employed to measure the Sauter mean diameter of bubbles experimentally in a gas liquid ejector using a sodium chloride-air system. The measured values are compared with the theoretically predicted maximum bubble size diameter using Sprow's correlation. Bubble size as a function of the liquid flow rate and also of its distance from the throat of the ejector has been reported in this paper. The results obtained for this non-reactive system are also compared with those obtained earlier for the air-water system.

Measurement of 1/f noise and its application in materials science

This is a review of the measurement of I If noise in certain classes of materials which have a wide range of potential applications. This includes metal films, semi-conductors, metallic oxides and inhomogeneous systems such as composites. The review contains a basic introduction to this field, the theories and models and follows it up with a discussion on measurement methods. There are discussions on specific examples of the application of noise spectroscopy in the field of materials science. (C) 2002 Elsevier Science Ltd. All rights reserved.

Measurement of axial dispersion coefficient in a packed bed using X-ray

Dispersion of the liquid in a porous media is of great importance in many areas of engineering and has been studied by several researchers so far. A new experimental method has been developed to measure the dispersion coefficient. X-ray absorption technique provides a better understanding of dispersion that characterizes the mixing phenomenon in the packed beds. This is because the method is non-invasive and also it gives tracer concentration data at every point within the bed. The axial dispersion in a cylindrical bed of non-porous and non-wetting spherical particles has been measured for the flow of water. Aqueous barium chloride solution has been used a as tracer. X-ray images, recorded on a videocassette, have been analyzed using an image processing software to extract the local interstitial velocity and concentration data in the bed. Local dispersion coefficient has been determined with the help of aforementioned data. By using these data, the overall dispersion coefficient in a packed bed can also be estimated.

Methods for making prisms with submultiple or half angles: applications to the measurement of the angles of Pechan and Pellin-Broca prisms

A simple technique is devised for making prisms with submultiple or half angles. As an application of these prisms, methods are suggested to measure the angles of the Pechan and Pellin-Broca prisms without using expensive spectrometers, autocollimators, and angle gauges. (C) 2002 Society of Photo-Optical Instrumentation Engineers.

Precise measurement of hyperfine intervals using avoided crossing of dressed states

We demonstrate a technique for precisely measuring hyperfine intervals in alkali atoms. The atoms form a three-level system in the presence of a strong control laser and a weak probe laser. The dressed states created by the control laser show significant linewidth reduction. We have developed a technique for Doppler-free spectroscopy that enables the separation between the dressed states to be measured with high accuracy even in room temperature atoms. The states go through an avoided crossing as the detuning of the control laser is changed from positive to negative. By studying the separation as a function of detuning, the center of the level-crossing diagram is determined with high precision, which yields the hyperfine interval. Using room temperature Rb vapor, we obtain a precision of 44 kHz. This is a significant improvement over the current precision of similar to1 MHz.

Study of thickness dependence on electrical properties of (Pb,La)TiO3 thin films for memory applications

Lead-lanthanum-titanate (Pb0.72La0.28)TiO3 (PLT) is one of the interesting materials for DRAM applications due to its room temperature paraelectric nature and its higher dielectric permittivity. PLT thin films of different thickness ranging from 0.54- 0.9 mum were deposited on Pt coated Si substrates by excimer laser ablation technique. We have measured the voltage (field) dependence, the thickness dependence, temperature dependence of dc leakage currents and analysis is done on these PLT thin films. Current- voltage characteristics were measured at different temperatures for different thick films and the thickness dependence of leakage current has been explained by considering space charge limited conduction mechanism. The charge transport phenomena were studied in detail for films of different thicknesses for dynamic random access memory applications.

The thickness dependence of the electrical and dielectric properties in the laser ablated SrBi2Nb2O9 thin films

he thickness dependence of the electrical properties in the thin films of uniaxial SrBi2Nb2O9 has been studied in this report. According to many published literatures, it could be an effective way to identify the basic conduction process. The laser ablation was chosen as the deposition technique to ensure an oriented growth and a proper stoichiometric deposition. The structural, dielectric and conduction properties were studied as a function of thickness. The films showed good ferroelectric properties, an ordered growth, and a space-charge controlled conduction process, which was double checked by reversing the polarity of the applied voltage, and also by examining the high field current response of the sample varying in thickness.

Direct measurement of phase of foreward-scattered light using polarization heterodyne interferometer

We describe direct measurement of phase of ballistic photons transmitted through objects hidden in a turbid medium using a polarization interferometer employing a rotating analyzer. The unwrapped phase difference measurements from interferometry was possible for medium levels of turbidity and accurate phase measurement from the sinusoidal intensity was not detectable when l/l* is increased beyond 4.3. The measured phase on reconstruction using standard tomographic algorithms resulted in the recovery of the refractive index profile of the object hidden in the turbid medium.

High contrast imaging and thickness determination of graphene with in-column secondary electron microscopy

We report a new method for quantitative estimation of graphene layer thicknesses using high contrast imaging of graphene films on insulating substrates with a scanning electron microscope. By detecting the attenuation of secondary electrons emitted from the substrate with an in-column low-energy electron detector, we have achieved very high thickness-dependent contrast that allows quantitative estimation of thickness up to several graphene layers. The nanometer scale spatial resolution of the electron micrographs also allows a simple structural characterization scheme for graphene, which has been applied to identify faults, wrinkles, voids, and patches of multilayer growth in large-area chemical vapor deposited graphene. We have discussed the factors, such as differential surface charging and electron beam induced current, that affect the contrast of graphene images in detail. (C) 2011 American Institute of Physics. doi:10.1063/1.3608062]

Mapping of local electronic properties in nanostructured CMR thin films by Scanning Tunneling Microscopy (STM) and Local Conductance Map (LCMAP)

We have investigated the local electronic properties and the spatially resolved magnetoresistance of a nanostructured film of a colossal magnetoresistive (CMR) material by local conductance mapping (LCMAP) using a variable temperature Scanning Tunneling Microscope (STM) operating in a magnetic field. The nanostructured thin films (thickness ≈500nm) of the CMR material La0.67Sr0.33MnO3 (LSMO) on quartz substrates were prepared using chemical solution deposition (CSD) process. The CSD grown films were imaged by both STM and atomic force microscopy (AFM). Due to the presence of a large number of grain boundaries (GB's), these films show low field magnetoresistance (LFMR) which increases at lower temperatures. The measurement of spatially resolved electronic properties reveal the extent of variation of the density of states (DOS) at and close to the Fermi level (EF) across the grain boundaries and its role in the electrical resistance of the GB. Measurement of the local conductance maps (LCMAP) as a function of magnetic field as well as temperature reveals that the LFMR occurs at the GB. While it was known that LFMR in CMR films originates from the GB, this is the first investigation that maps the local electronic properties at a GB in a magnetic field and traces the origin of LFMR at the GB.

MFIS and MFS structures using SrBi2Ta2O9 thin films for the FRAM applications

Recently there is an increasing demand and extensive research on high density memories, in particular to the ferroelectric random access memory composed of 1T/1C (1 transistor/1 capacitor) or 2T/2C. FRAM's exhibit fast random acess in read/write mode, non - volatility and low power for good performance. An integration of the ferroelectric on Si is the key importance and in this regard, there had been various models proposed like MFS, MFIS, MFMIS structure etc., Choosing the proper insulator is very essential for the better performance of the device and to exhibit excellent electrical characteristics. ZrTiO4 is a potential candidate because of its excellent thermal stability and lattice match on the Si substrate. SrBi2Ta2O9 and ZrTiO4 thin films were prepared on p - type Si substrate by pulsed excimer laser ablation technique. Optimization of both ZT and SBT thin films in MFS and MFIS structure had been done based on the annealing, oxygen partial pressures and substrate temperatures to have proper texture of the thin films. The dc leakage current, P - E hysteresis, capacitance - voltage and conductance - voltage measurement were carried out. The effect of the frequency dependence on MFIS structure was observed in the C – V curve. It displays a transition of C - V curve from high frequency to low frequency curve on subjection to varied frequencies. Density of interface states has been calculated using Terman and high - low frequency C - V curve. The effect of memory window in the C - V hysteresis were analysed in terms of film thickness and annealing temperatures. DC conduction mechanism were analysed in terms of poole - frenkel, Schottky and space charge limited conduction separately on MFS, MIS structure.

MFIS and MFS structures using SrBi2Ta2O9 thin films for the FRAM applications

Recently there is an increasing demand and extensive research on high density memories, in particular to the ferroelectric random access memory composed of 1T/1C (1 transistor/1 capacitor) or 2T/2C. FRAM's exhibit fast random acess in read/write mode, non - volatility and low power for good performance. An integration of the ferroelectric on Si is the key importance and in this regard, there had been various models proposed like MFS, MFIS, MFMIS structure etc., Choosing the proper insulator is very essential for the better performance of the device and to exhibit excellent electrical characteristics. ZrTiO4 is a potential candidate because of its excellent thermal stability and lattice match on the Si substrate. SrBi2Ta2O9 and ZrTiO4 thin films were prepared on p - type Si substrate by pulsed excimer laser ablation technique. Optimization of both ZT and SBT thin films in MFS and MFIS structure had been done based on the annealing, oxygen partial pressures and substrate temperatures to have proper texture of the thin films. The dc leakage current, P - E hysteresis, capacitance - voltage and conductance - voltage measurement were carried out. The effect of the frequency dependence on MFIS structure was observed in the C – V curve. It displays a transition of C - V curve from high frequency to low frequency curve on subjection to varied frequencies. Density of interface states has been calculated using Terman and high - low frequency C - V curve. The effect of memory window in the C - V hysteresis were analysed in terms of film thickness and annealing temperatures. DC conduction mechanism were analysed in terms of poole - frenkel, Schottky and space charge limited conduction separately on MFS, MIS structure.

Measurement of Heat Transfer Rate on Backward-Facing Steps at Hypersonic Mach Number

Two backward-facing models with step heights of 2 and 3 mm are used to measure the convective surface heat transfer rates by using platinum thin-film gauges, deposited on Macor inserts. Heat transfer rates have been theoretically calculated along the flat plate portion of a model using the Eckert reference temperature method. The experimentally determined surface heat transfer rate distributions are compared with theoretical and numerical estimations. Experimental heat flux distribution over a flat plate model showed good agreement with the reference temperature method at stagnation enthalpy range of 0.8-2 MJ/kg. Theoretical analysis has been used for downstream of a backward-facing step using Gai's nondimensional analysis. It has been found from the present study that approximately 10 and 8 step heights are required for the flow to reattach for 2 and 3 mm step height backward-facing step models, respectively, at a nominal Mach number of 7.6.