Low temperature electrical transport properties of carbon matrix containing iron nanoparticles

We present a comparative study of the low temperature electrical transport properties of the carbon matrix containing iron nanoparticles and the films. The conductivity of the nanoparticles located just below the metal-insulator transition exhibits metallic behavior with a logarithmic temperature dependence over a large temperature interval. The zero-field conductivity and the negative magnetoresistance, showing a characteristic upturn at liquid helium temperature, are consistently explained by incorporating the Kondo relation and the two dimensional electron-electron interaction. The films, in contrast, exhibit a crossover of the conductivity from power-law dependence at high temperatures to an activated hopping law dependence in the low temperature region. The transition is attributed to changes in the energy dependence of the density of states near the Fermi level. The observed magnetoresistance is discussed in terms of quantum interference effect on a three-dimensional variable range hopping mechanism.

Electrical and optical properties of amorphous semiconducting GeSe and GeSbSe films

The electrical activation energy and optical band-gap of GeSe and GeSbSe thin films prepared by flash evaporation on to glass substrates have been determined. The conductivities of the films were found to be given by Image , the activation energy Ea being 0.53 eV and 0.40 eV for GeSe and GeSbSe respectively. The optical absorption constant α near the absorption edge could be described by Image from which the optical band-gaps E0 were found to be 1.01 eV for GeSe and 0.67 eV for GeSbSe at 300°K. At 110°K the corresponding values of E0 were 1.07 eV and 0.735 eV respectively. The significance of these values is discussed in relation to those of other amorphous semiconductors.

Influence of magnetic clusters on electrical and magnetic properties of In1-xMnxSb/GaAs dilute magnetic semiconductor grown by liquid phase epitaxy

In1-xMnxSb films have been grown with different Mn doping concentrations (x = 0.0085, 0.018, 0.029 and 0.04) beyond the equilibrium 14 solubility limit by liquid phase epitaxy. We have studied temperature dependent resistivity, the Hall effect, magnetoresistance and magnetization for all compositions. Saturation in magnetization observed even at room temperature suggests the existence of ferromagnetic clusters in the film which has been verified by scanning electron microscopy studies. The anomalous Hall coefficient is found to be negative. Remnant field present on the surface of the clusters seems to affect the anomalous Hall effect at very low fields (below 350 Gauss). In the zero field resistivity, a variable-range hopping conduction mechanism dominates below 3.5 K for all samples above which activated behavior is predominant. The temperature dependence of the magnetization measurement shows a magnetic ordering below 10 K which is consistent with electrical measurements. (c) 2007 Elsevier Ltd. All rights reserved.

Electrical and structural properties of zirconia thin films prepared by reactive magnetron sputtering

Thin films of ZrO2 were prepared by reactive magnetron sputtering. Annealing of the films exhibited a drastic change in the properties due to improved crystallinity and packing density. The root mean square roughness of the sample observed from atomic force microscope is about 5.75 nm which is comparable to the average grain size of the thin film which is about 6 nm obtained from X-ray diffraction. The film annealed at 873 K exhibits an optical band gap of around 4.83 eV and shows +4 oxidation state of zirconium indicating fully oxidized zirconium, whereas higher annealing temperatures lead to oxygen deficiency in the films and this is reflected in their properties. A discontinuity in the imaginary part of the AC conductivity was observed in the frequency range of tens of thousands of Hz, where as, the real part does not show such behavior.

Electrical transport properties of 0.5Li(2)O-0.5M(2)O-2B(2)O(3) (M = Li, Na and K) glasses

Transparent glasses in the system 0.5Li(2)O-0.5M(2)O-2B(2)O(3) (M = Li, Na and K) were fabricated via the conventional melt quenching technique. The amorphous and glassy nature of the samples was confirmed via the X-ray powder diffraction and the differential scanning calorimetry, respectively. The frequency and temperature dependent characteristics of the dielectric relaxation and the electrical conductivity were investigated in the 100 Hz-10 MHz frequency range. The imaginary part of the electric modulus spectra was modeled using an approximate solution of Kohrausch-Williams-Watts relation. The stretching exponent, (3, was found to be temperature independent for 0.5Li(2)O-0.5Na(2)O-2B(2)O(3) (LNBO) glasses. The activation energy associated with DC conduction was found to be higher (1.25 eV) for 0.5Li(2)O-0.5K(2)O-2B(2)O(3) (LKBO) glasses than that of the other glass systems under study. This is attributed to the mixed cation effect. (C) 2011 Elsevier By. All rights reserved.

Structural and electrical transport properties of Al-Cu-Cr quasicrystals

Transport properties of quasicrystals in rapidly solidified as well as heat-treated Al65CU20Cr15 alloys were studied over a wide temperature range as a function of structure and microstructure. The characterization was done using x-ray diffraction, transmission electron microscopy and differential scanning calorimetry. Particular attention was paid to primitive to face-centered quasicrystalline transformation which occurs on annealing and the effect of microstructures on the transport behavior. The temperature dependence of resistivity is found to depend crucially on the microstructure of the alloy. Further, ordering enhances the negative temperature coefficient of resistivity. The low-temperature (T less than or equal to 25 K) resistivity of Al65Cu20Cr15 has been compared with that of Al63.5Cu24.5Fe12 alloy. In this region p(T) can be well described by a root T contribution arising from electron-electron interaction. We discuss our results in view of current theories.

Electrical and magnetic properties of pure and Li intercalated Bi1.7-xPbxV8O16 phases

Hollandite oxides of the type Bi1.7-xPbxV8O16 have been synthesized. The electrical resistivity studies show that the conductivity improves upon Pb substitution. The feasibility of Li intercalation in the system has been established. Magnetic susceptibility studies on the pure and Li intercalated phases show that except for pure Bi1.7V8O16, all phases exhibit Pauli paramagnetism. No superconductivity is encountered down to 12 K in any of the phases. (C) 1998 Elsevier Science B.V. All rights reserved.

Electrical and Optical Properties of Diketopyrrolopyrrole-Based Copolymer Interfaces in Thin Film Devices

Two donor acceptor diketopyrrolopyrrole (DPP)-based copolymers (PDPP-BBT and TDPP-BBT) have been synthesized for their application in organic devices such as metal-insulator semiconductor (MIS) diodes and field-effect transistors (FETs). The semiconductor-dielectric interface was characterized by capacitance-voltage and conductance-voltage methods. These measurements yield an interface trap density of 4.2 x 10(12) eV(-1) cm(-2) in TDPP-BBT and 3.5 x 10(12) eV(-1) cm(-2) in PDPP-BBT at the flat-band voltage. The FETs based on these spincoated DPP copolymers display p-channel behavior with hole mobilities of the order 10(-3) cm(2)/(V s). Light scattering studies from PDPP-BBT FETs show almost no change in the Raman spectrum after the devices are allowed to operate at a gate voltage, indicating that the FETs suffer minimal damage due to the metal-polymer contact or the application of an electric field. As a comparison Raman intensity profile from the channel-Au contact layer in pentacene FETs are presented, which show a distinct change before and after biasing.

Electrical transport and magnetic properties of La0.5Ca0.5MnO3-y with varying oxygen content

We report the tuning of oxygen content of La0.5Ca0.5MnO3-y and its effect on electrical transport and magnetic properties. A small reduction of oxygen content leads to a decrease in sample resistivity, which is more dramatic at low temperatures. No significant change is seen to occur in the magnetic properties for this case. Further reduction in the oxygen content increases the resistivity remarkably, as compared to the as-prepared sample. The amplitude of the ferromagnetic (FM) transition at 225 K decreases, and the antiferromagnetic (AFM) transition at 130 K disappears. For samples with y=0.17, insulator-metal transition and paramagnetic-ferromagnetic transition occur around 167 K. The results are explained in terms of the effect of oxygen vacancies on the coexistence of the metallic FM phase and the insulating charge ordered AFM phase.

General theories for the electrical transport properties of carbon nanotubes

We have shown that the general theories of metals and semiconductors can be employed to understand the diameter and voltage dependency of current through metallic and semiconducting carbon nanotubes, respectively. The current through a semiconducting multiwalled carbon nanotube (MWCNT) is associated with the energy gap that is different for different shells. The contribution of the outermost shell is larger as compared to the inner shells. The general theories can also explain the diameter dependency of maximum current through nanotubes. We have also compared the current carrying ability of a MWCNT and an array of the same diameter of single wall carbon nanotubes (SWCNTs) and found that MWCNTs are better suited and deserve further investigation for possible applications as interconnects.

Optical, electrical and dielectric properties of TiO(2)-SiO(2) films prepared by a cost effective sol-gel process

Titanium dioxide (TiO(2)) and silicon dioxide (SiO(2)) thin films and their mixed films were synthesized by the sol-gel spin coating method using titanium tetra isopropoxide (TTIP) and tetra ethyl ortho silicate (TEOS) as the precursor materials for TiO(2) and SiO(2) respectively. The pure and composite films of TiO(2) and SiO(2) were deposited on glass and silicon substrates. The optical properties were studied for different compositions of TiO(2) and SiO(2) sols and the refractive index and optical band gap energies were estimated. MOS capacitors were fabricated using TiO(2) films on p-silicon (1 0 0) substrates. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were studied and the electrical resistivity and dielectric constant were estimated for the films annealed at 200 degrees C for their possible use in optoelectronic applications. (C) 2011 Elsevier B.V. All rights reserved.

Structural, electrical, and optical properties of as-grown and heat treated ultra-thin SnS films

The composition, structural, electrical, and optical properties of as-grown and heat treated tin-mono-sulfide (SnS) ultra-thin films have been studied. The ultra-thin SnS films were prepared on glass substrates by thermal resistive evaporation technique. All the SnS films contained nanocrystallites and exhibited p-type conductivity with a low Hall-mobility, <50 cm(2)/Vs. All these films are highly tin rich in nature and exhibited orthorhombic crystal structure. As compared to other films, the SnS films annealed at 300 degrees C showed a low electrical resistivity of similar to 36 Omega cm with an optical band gap of similar to 1.98 eV. The observed electrical and optical properties of all the films are discussed based on their composition and structural parameters. These nanocrystalline ultra-thin SnS films could be expected as a buffer layer for the development of tandem solar cell devices due to their low-resistivity and high absorbability with an optimum band gap. (C) 2011 Elsevier B.V. All rights reserved.

Electrical Switching and Other Properties of Chalcogenide Glasses

Abstract | Electrical switching which has applications in areas such as information storage, power control, etc is a scientifically interesting and technologically important phenomenon exhibited by glassy chalcogenide semiconductors. The phase change memories based on electrical switching appear to be the most promising next generation non-volatile memories, due to many attributes which include high endurance in write/read operations, shorter write/read time, high scalability, multi-bit capability, lower cost and a compatibility with complementary metal oxide semiconductor technology.Studies on the electrical switching behavior of chalcogenide glasses help us in identifying newer glasses which could be used for phase change memory applications. In particular, studies on the composition dependence of electrical switching parameters and investigations on the correlation between switching behavior with other material properties are necessary for the selection of proper compositions which make good memory materials.In this review, an attempt has been made to summarize the dependence of the electrical switching behavior of chalcogenide glasses with other material properties such as network topological effects, glass transition & crystallization temperature, activation energy for crystallization, thermal diffusivity, electrical resistivity and others.