Combining anisotropic diffusion, transport equation and texture synthesis for inpainting textured images

In this work we propose a new image inpainting technique that combines texture synthesis, anisotropic diffusion, transport equation and a new sampling mechanism designed to alleviate the computational burden of the inpainting process. Given an image to be inpainted, anisotropic diffusion is initially applied to generate a cartoon image. A block-based inpainting approach is then applied so that to combine the cartoon image and a measure based on transport equation that dictates the priority on which pixels are filled. A sampling region is then defined dynamically so as to hold the propagation of the edges towards image structures while avoiding unnecessary searches during the completion process. Finally, a cartoon-based metric is computed to measure likeness between target and candidate blocks. Experimental results and comparisons against existing techniques attest the good performance and flexibility of our technique when dealing with real and synthetic images. © 2013 Elsevier B.V. All rights reserved.

Resistência de espécies silvestres de amendoim (Arachis spp.) ao ataque de Enneothrips flavens Moulton, 1941 (Thysanoptera: Thripidae) e Stegasta bosquella (Chambers, 1875) (Lepidoptera: Gelechiidae)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

ICT adoption and diffusion patterns in Latin American agriculture

Includes bibliography

Avaliação da alteração de cor, difusão de peróxido de hidrogênio e citotoxicidade trans-amelodentinária causadas por diferentes técnicas de clareamento dental

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Resistência de germoplasma silvestre de amendoim (arachis spp.) a Enneothrips flavens Moulton, 1941 (Thysanoptera: Thripidae) e Stegasta bosquella (Chambers, 1875) (Lepidoptera: Gelechiidae)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Mathematical modeling and analysis of the flocculation process in chambers in series

In this study, the flocculation process in continuous systems with chambers in series was analyzed using the classical kinetic model of aggregation and break-up proposed by Argaman and Kaufman, which incorporates two main parameters: K (a) and K (b). Typical values for these parameters were used, i. e., K (a) = 3.68 x 10(-5)-1.83 x 10(-4) and K (b) = 1.83 x 10(-7)-2.30 x 10(-7) s(-1). The analysis consisted of performing simulations of system behavior under different operating conditions, including variations in the number of chambers used and the utilization of fixed or scaled velocity gradients in the units. The response variable analyzed in all simulations was the total retention time necessary to achieve a given flocculation efficiency, which was determined by means of conventional solution methods of nonlinear algebraic equations, corresponding to the material balances on the system. Values for the number of chambers ranging from 1 to 5, velocity gradients of 20-60 s(-1) and flocculation efficiencies of 50-90 % were adopted.

Low toxic effects of a whitening strip to cultured pulp cells

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Influence of Concentration and Activation on Hydrogen Peroxide Diffusion through Dental Tissues In Vitro

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Diffusion of Lambda(c) in hot hadronic medium and its impact on Lambda(c)/D ratio

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Degradation of dipyrone by electrogenerated H2O2 combined with Fe2+ using a modified gas diffusion electrode

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

An Informatics Technical Note on Interaction of DNA - Graphene Chemical Sensor System as Reaction-Diffusion Wave-Based Computing System in Ionised Gaseous environments and their Applications Using Theoretical Studies and Scientific Computation Overview

The physics of plasmas encompasses basic problems from the universe and has assured us of promises in diverse applications to be implemented in a wider range of scientific and engineering domains, linked to most of the evolved and evolving fundamental problems. Substantial part of this domain could be described by R–D mechanisms involving two or more species (reaction–diffusion mechanisms). These could further account for the simultaneous non-linear effects of heating, diffusion and other related losses. We mention here that in laboratory scale experiments, a suitable combination of these processes is of vital importance and very much decisive to investigate and compute the net behaviour of plasmas under consideration. Plasmas are being used in the revolution of information processing, so we considered in this technical note a simple framework to discuss and pave the way for better formalisms and Informatics, dealing with diverse domains of science and technologies. The challenging and fascinating aspects of plasma physics is that it requires a great deal of insight in formulating the relevant design problems, which in turn require ingenuity and flexibility in choosing a particular set of mathematical (and/or experimental) tools to implement them.

Electrical Properties at Grain Boundaries Influenced by Cr3+ Diffusion in SnO2.ZnO.Nb2O5-Films Varistor Prepared by Electrophoresis Deposition

SnO2-based varistors are strong candidates to replace the ZnO-based varistors due to ordering fewer additives to improve its electrical behavior as well as by showing similar nonlinear characteristics of ZnO varistors. In this work, SnO2-nanoparticles based-varistors with addition of 1.0 %mol of ZnO and 0.05 %mol of Nb2O5 were synthesized by chemical route. SnO2.ZnO.Nb2O5-films with 5 μm of thickness were obtained by electrophoretic deposition (EPD) of the nanoparticles on Si/Pt substrate from alcoholic suspension of SnO2-based powder. The sintering step was carried out in a microwave oven at 1000 °C for 40 minutes. Then, Cr3+ ions were deposited on the films surface by EPD after the sintering step. Each sample was submitted to different thermal treatments to improve the varistor behavior by diffusion of ions in the samples. The films showed a nonlinear coefficient (α) greater than 9, breakdown voltage (VR) around 60 V, low leakage current (IF ≈ 10-6 A), height potential barrier above 0.5 eV and grain boundary resistivity upward of 107 Ω.cm.