High data rate modulation of high power 1060-nm DBR tapered lasers with separate contacts

Direct optical modulation at 2.5 Gb/s with amplitude of more than 0.5 W has been demonstrated in single longitudinal mode distributed Bragg reflector tapered lasers emitting at 1060 nm with separated injection of the ridge waveguide and tapered sections. The modulating signal of ~110 mA peak to peak was applied to the ridge waveguide section, yielding a high modulation efficiency of ~5 W/A. The large-signal frequency response of the experimental set-up was limited by the bandwidth of the electrical amplifier rather than by the internal dynamics of the laser, indicating that higher bit rates could be achieved with improved driving electronics.

Building lean thinking in a telecom software development organization: strengths and challenges.

The potential shown by Lean in different domains has aroused interest in the software industry. However, it remains unclear how Lean can be effectively applied in a domain such as software development that is fundamentally different from manufacturing. This study explores how Lean principles are implemented in software development companies and the challenges that arise when applying Lean Software Development. For that, a case study was conducted at Ericsson R&D Finland, which successfully adopted Scrum in 2009 and subsequently started a comprehensible transition to Lean in 2010. Focus groups were conducted with company representatives to help devise a questionnaire supporting the creation of a Lean mindset in the company (Team Amplifier). Afterwards, the questionnaire was used in 16 teams based in Finland, Hungary and China to evaluate the status of the transformation. By using Lean thinking, Ericsson R&D Finland has made important improvements to the quality of its products, customer satisfaction and transparency within the organization. Moreover, build times have been reduced over ten times and the number of commits per day has increased roughly five times.The study makes two main contributions to research. First, the main factors that have enabled Ericsson R&D?s achievements are analysed. Elements such as ?network of product owners?, ?continuous integration?, ?work in progress limits? and ?communities of practice? have been identified as being of fundamental importance. Second, three categories of challenges in using Lean Software Development were identified: ?achieving flow?, ?transparency? and ?creating a learning culture?

Dynamical characterization of monolithic MOPAs emitting at 1.5 μ�m

Eye-safety requirements in important applications like LIDAR or Free Space Optical Communications make specifically interesting the generation of high power, short optical pulses at 1.5 um. Moreover, high repetition rates allow reducing the error and/or the measurement time in applications involving pulsed time-of-flight measurements, as range finders, 3D scanners or traffic velocity controls. The Master Oscillator Power Amplifier (MOPA) architecture is an interesting source for these applications since large changes in output power can be obtained at GHz rates with a relatively small modulation of the current in the Master Oscillator (MO). We have recently demonstrated short optical pulses (100 ps) with high peak power (2.7 W) by gain switching the MO of a monolithically integrated 1.5 um MOPA. Although in an integrated MOPA the laser and the amplifier are ideally independent devices, compound cavity effects due to the residual reflectance at the different interfaces are often observed, leading to modal instabilities such as self-pulsations.

Simulación, construcción y medida de un sistema de telealimentación eficiente

Los sistemas de telealimentación han tomado gran importancia en diferentes campos, incluido el de las telecomunicaciones, algunos ejemplos pueden ser: En la red conmutada telefónica junto con la señal de información y llamada existe una alimentación de 48v que se transmite a través de toda la línea de transmisión hasta los terminales. En algunos ferrocarriles eléctricos, se aprovecha la producción de energía eléctrica cuando un tren baja una cuesta y el motor funciona como generador, devolviendo la energía excedente a la propia catenaria por medio de superposición, y siendo esta recuperada en otro lugar y aprovechada por ejemplo por otro tren que requiere energía. Otro uso en ferrocarriles de la telealimentación es la llamada "tecnología del transpondedor magnético", en la que el tren transmite a las balizas una señal en 27MHz además de otras de información propias, que se convierte en energía útil para estas balizas. En este proyecto pretendemos implementar un pequeño ejemplo de sistema de telealimentación trabajando en 5 MHz (RF). Este sistema transforma una señal de CC en una señal de potencia de CA que podría ser, por ejemplo, transmitida a lo largo de una línea de transmisión o radiada por medio de una antena. Después, en el extremo receptor, esta señal RF se transforma finalmente en DC. El objetivo es lograr el mejor rendimiento de conversión de energía, DC a AC y AC a DC. El sistema se divide en dos partes: El inversor, que es la cadena de conversión DC-AC y el rectificador, que es la cadena de conversión AC-DC. Cada parte va a ser calculada, simulada, implementada físicamente y medida aparte. Finalmente el sistema de telealimentación completo se va a medir mediante la interconexión de cada parte por medio de un adaptador o una línea de transmisión. Por último, se mostrarán los resultados obtenidos. ABSTRACT. Remote powering systems have become very important in different fields, including telecommunications, some examples include: In the switched telephone network with the information signal and call there is a 48v supply that is transmitted across the transmission line to the terminals. In some electric railways, the production of electrical energy is used when a train is coming down a hill and the motor acts as a generator, returning the surplus energy to the catenary itself by overlapping, and this being recovered elsewhere and used by other train. Home TV amplifiers that are located in places (storage, remote locations ..) where there is no outlet, remote power allows to carry information and power signal by the same physical medium, for instance a coax. The AC power signal is transformed into DC at the end to feed the amplifier. In medicine, photovoltaic converters and fiber optics can be used as means for feeding devices implanted in patients. Another use of the remote powering systems on railways is the "magnetic transponder technology", in which the station transmits a beacon signal at 27MHz own as well as other information, which is converted into useful energy to these beacons. In this Project we are pretending to implement a little example of remote powering system working in 5 MHz (RF). This system transform DC into an AC-RF power signal which could be, for instance, transmitted throughout a transmission line or radiated by means of an aerial. At the receiving end, this RF signal is then transformed to DC. The objective is to achieve the best power conversion performance, DC to AC and AC to DC. The system is divided in two parts: The inverter, that is the DC-AC conversion chain and the rectifier that is the AC-DC conversion chain. Each part is going to be calculated, simulated, implemented physically and measured apart. Then the complete remote-powering system is to be measured by interconnecting each part by means of a interconnector or a transmission line. Finally, obtained results will be shown.

Technology and characterization of GaN-HEMTs devices: high temperature and trapping effects

Los transistores de alta movilidad electrónica basados en GaN han sido objeto de una extensa investigación ya que tanto el GaN como sus aleaciones presentan unas excelentes propiedades eléctricas (alta movilidad, elevada concentración de portadores y campo eléctrico crítico alto). Aunque recientemente se han incluido en algunas aplicaciones comerciales, su expansión en el mercado está condicionada a la mejora de varios asuntos relacionados con su rendimiento y habilidad. Durante esta tesis se han abordado algunos de estos aspectos relevantes; por ejemplo, la fabricación de enhancement mode HEMTs, su funcionamiento a alta temperatura, el auto calentamiento y el atrapamiento de carga. Los HEMTs normalmente apagado o enhancement mode han atraído la atención de la comunidad científica dedicada al desarrollo de circuitos amplificadores y conmutadores de potencia, ya que su utilización disminuiría significativamente el consumo de potencia; además de requerir solamente una tensión de alimentación negativa, y reducir la complejidad del circuito y su coste. Durante esta tesis se han evaluado varias técnicas utilizadas para la fabricación de estos dispositivos: el ataque húmedo para conseguir el gate-recess en heterostructuras de InAl(Ga)N/GaN; y tratamientos basados en flúor (plasma CF4 e implantación de F) de la zona debajo de la puerta. Se han llevado a cabo ataques húmedos en heteroestructuras de InAl(Ga)N crecidas sobre sustratos de Si, SiC y zafiro. El ataque completo de la barrera se consiguió únicamente en las muestras con sustrato de Si. Por lo tanto, se puede deducir que la velocidad de ataque depende de la densidad de dislocaciones presentes en la estructura, ya que el Si presenta un peor ajuste del parámetro de red con el GaN. En relación a los tratamientos basados en flúor, se ha comprobado que es necesario realizar un recocido térmico después de la fabricación de la puerta para recuperar la heteroestructura de los daños causados durante dichos tratamientos. Además, el estudio de la evolución de la tensión umbral con el tiempo de recocido ha demostrado que en los HEMTs tratados con plasma ésta tiende a valores más negativos al aumentar el tiempo de recocido. Por el contrario, la tensión umbral de los HEMTs implantados se desplaza hacia valores más positivos, lo cual se atribuye a la introducción de iones de flúor a niveles más profundos de la heterostructura. Los transistores fabricados con plasma presentaron mejor funcionamiento en DC a temperatura ambiente que los implantados. Su estudio a alta temperatura ha revelado una reducción del funcionamiento de todos los dispositivos con la temperatura. Los valores iniciales de corriente de drenador y de transconductancia medidos a temperatura ambiente se recuperaron después del ciclo térmico, por lo que se deduce que dichos efectos térmicos son reversibles. Se han estudiado varios aspectos relacionados con el funcionamiento de los HEMTs a diferentes temperaturas. En primer lugar, se han evaluado las prestaciones de dispositivos de AlGaN/GaN sobre sustrato de Si con diferentes caps: GaN, in situ SiN e in situ SiN/GaN, desde 25 K hasta 550 K. Los transistores con in situ SiN presentaron los valores más altos de corriente drenador, transconductancia, y los valores más bajos de resistencia-ON, así como las mejores características en corte. Además, se ha confirmado que dichos dispositivos presentan gran robustez frente al estrés térmico. En segundo lugar, se ha estudiado el funcionamiento de transistores de InAlN/GaN con diferentes diseños y geometrías. Dichos dispositivos presentaron una reducción casi lineal de los parámetros en DC en el rango de temperaturas de 25°C hasta 225°C. Esto se debe principalmente a la dependencia térmica de la movilidad electrónica, y también a la reducción de la drift velocity con la temperatura. Además, los transistores con mayores longitudes de puerta mostraron una mayor reducción de su funcionamiento, lo cual se atribuye a que la drift velocity disminuye más considerablemente con la temperatura cuando el campo eléctrico es pequeño. De manera similar, al aumentar la distancia entre la puerta y el drenador, el funcionamiento del HEMT presentó una mayor reducción con la temperatura. Por lo tanto, se puede deducir que la degradación del funcionamiento de los HEMTs causada por el aumento de la temperatura depende tanto de la longitud de la puerta como de la distancia entre la puerta y el drenador. Por otra parte, la alta densidad de potencia generada en la región activa de estos transistores conlleva el auto calentamiento de los mismos por efecto Joule, lo cual puede degradar su funcionamiento y Habilidad. Durante esta tesis se ha desarrollado un simple método para la determinación de la temperatura del canal basado en medidas eléctricas. La aplicación de dicha técnica junto con la realización de simulaciones electrotérmicas han posibilitado el estudio de varios aspectos relacionados con el autocalentamiento. Por ejemplo, se han evaluado sus efectos en dispositivos sobre Si, SiC, y zafiro. Los transistores sobre SiC han mostrado menores efectos gracias a la mayor conductividad térmica del SiC, lo cual confirma el papel clave que desempeña el sustrato en el autocalentamiento. Se ha observado que la geometría del dispositivo tiene cierta influencia en dichos efectos, destacando que la distribución del calor generado en la zona del canal depende de la distancia entre la puerta y el drenador. Además, se ha demostrado que la temperatura ambiente tiene un considerable impacto en el autocalentamiento, lo que se atribuye principalmente a la dependencia térmica de la conductividad térmica de las capas y sustrato que forman la heterostructura. Por último, se han realizado numerosas medidas en pulsado para estudiar el atrapamiento de carga en HEMTs sobre sustratos de SiC con barreras de AlGaN y de InAlN. Los resultados obtenidos en los transistores con barrera de AlGaN han presentado una disminución de la corriente de drenador y de la transconductancia sin mostrar un cambio en la tensión umbral. Por lo tanto, se puede deducir que la posible localización de las trampas es la región de acceso entre la puerta y el drenador. Por el contrario, la reducción de la corriente de drenador observada en los dispositivos con barrera de InAlN llevaba asociado un cambio significativo en la tensión umbral, lo que implica la existencia de trampas situadas en la zona debajo de la puerta. Además, el significativo aumento del valor de la resistencia-ON y la degradación de la transconductancia revelan la presencia de trampas en la zona de acceso entre la puerta y el drenador. La evaluación de los efectos del atrapamiento de carga en dispositivos con diferentes geometrías ha demostrado que dichos efectos son menos notables en aquellos transistores con mayor longitud de puerta o mayor distancia entre puerta y drenador. Esta dependencia con la geometría se puede explicar considerando que la longitud y densidad de trampas de la puerta virtual son independientes de las dimensiones del dispositivo. Finalmente se puede deducir que para conseguir el diseño óptimo durante la fase de diseño no sólo hay que tener en cuenta la aplicación final sino también la influencia que tiene la geometría en los diferentes aspectos estudiados (funcionamiento a alta temperatura, autocalentamiento, y atrapamiento de carga). ABSTRACT GaN-based high electron mobility transistors have been under extensive research due to the excellent electrical properties of GaN and its related alloys (high carrier concentration, high mobility, and high critical electric field). Although these devices have been recently included in commercial applications, some performance and reliability issues need to be addressed for their expansion in the market. Some of these relevant aspects have been studied during this thesis; for instance, the fabrication of enhancement mode HEMTs, the device performance at high temperature, the self-heating and the charge trapping. Enhancement mode HEMTs have become more attractive mainly because their use leads to a significant reduction of the power consumption during the stand-by state. Moreover, they enable the fabrication of simpler power amplifier circuits and high-power switches because they allow the elimination of negativepolarity voltage supply, reducing significantly the circuit complexity and system cost. In this thesis, different techniques for the fabrication of these devices have been assessed: wet-etching for achieving the gate-recess in InAl(Ga)N/GaN devices and two different fluorine-based treatments (CF4 plasma and F implantation). Regarding the wet-etching, experiments have been carried out in InAl(Ga)N/GaN grown on different substrates: Si, sapphire, and SiC. The total recess of the barrier was achieved after 3 min of etching in devices grown on Si substrate. This suggests that the etch rate can critically depend on the dislocations present in the structure, since the Si exhibits the highest mismatch to GaN. Concerning the fluorine-based treatments, a post-gate thermal annealing was required to recover the damages caused to the structure during the fluorine-treatments. The study of the threshold voltage as a function of this annealing time has revealed that in the case of the plasma-treated devices it become more negative with the time increase. On the contrary, the threshold voltage of implanted HEMTs showed a positive shift when the annealing time was increased, which is attributed to the deep F implantation profile. Plasma-treated HEMTs have exhibited better DC performance at room temperature than the implanted devices. Their study at high temperature has revealed that their performance decreases with temperature. The initial performance measured at room temperature was recovered after the thermal cycle regardless of the fluorine treatment; therefore, the thermal effects were reversible. Thermal issues related to the device performance at different temperature have been addressed. Firstly, AlGaN/GaN HEMTs grown on Si substrate with different cap layers: GaN, in situ SiN, or in situ SiN/GaN, have been assessed from 25 K to 550 K. In situ SiN cap layer has been demonstrated to improve the device performance since HEMTs with this cap layer have exhibited the highest drain current and transconductance values, the lowest on-resistance, as well as the best off-state characteristics. Moreover, the evaluation of thermal stress impact on the device performance has confirmed the robustness of devices with in situ cap. Secondly, the high temperature performance of InAlN/GaN HEMTs with different layouts and geometries have been assessed. The devices under study have exhibited an almost linear reduction of the main DC parameters operating in a temperature range from room temperature to 225°C. This was mainly due to the thermal dependence of the electron mobility, and secondly to the drift velocity decrease with temperature. Moreover, HEMTs with large gate length values have exhibited a great reduction of the device performance. This was attributed to the greater decrease of the drift velocity for low electric fields. Similarly, the increase of the gate-to-drain distance led to a greater reduction of drain current and transconductance values. Therefore, this thermal performance degradation has been found to be dependent on both the gate length and the gate-to-drain distance. It was observed that the very high power density in the active region of these transistors leads to Joule self-heating, resulting in an increase of the device temperature, which can degrade the device performance and reliability. A simple electrical method have been developed during this work to determine the channel temperature. Furthermore, the application of this technique together with the performance of electro-thermal simulations have enabled the evaluation of different aspects related to the self-heating. For instance, the influence of the substrate have been confirmed by the study of devices grown on Si, SiC, and Sapphire. HEMTs grown on SiC substrate have been confirmed to exhibit the lowest self-heating effects thanks to its highest thermal conductivity. In addition to this, the distribution of the generated heat in the channel has been demonstrated to be dependent on the gate-to-drain distance. Besides the substrate and the geometry of the device, the ambient temperature has also been found to be relevant for the self-heating effects, mainly due to the temperature-dependent thermal conductivity of the layers and the substrate. Trapping effects have been evaluated by means of pulsed measurements in AlGaN and InAIN barrier devices. AlGaN barrier HEMTs have exhibited a de crease in drain current and transconductance without measurable threshold voltage change, suggesting the location of the traps in the gate-to-drain access region. On the contrary, InAIN barrier devices have showed a drain current associated with a positive shift of threshold voltage, which indicated that the traps were possibly located under the gate region. Moreover, a significant increase of the ON-resistance as well as a transconductance reduction were observed, revealing the presence of traps on the gate-drain access region. On the other hand, the assessment of devices with different geometries have demonstrated that the trapping effects are more noticeable in devices with either short gate length or the gate-to-drain distance. This can be attributed to the fact that the length and the trap density of the virtual gate are independent on the device geometry. Finally, it can be deduced that besides the final application requirements, the influence of the device geometry on the performance at high temperature, on the self-heating, as well as on the trapping effects need to be taken into account during the device design stage to achieve the optimal layout.

High-brightness all semiconductor laser at 1.57 µm for space-borne lidar measurements of atmospheric carbon dioxide: device design and analysis of requirements

The availability of suitable laser sources is one of the main challenges in future space missions for accurate measurement of atmospheric CO2. The main objective of the European project BRITESPACE is to demonstrate the feasibility of an all-semiconductor laser source to be used as a space-borne laser transmitter in an Integrated Path Differential Absorption (IPDA) lidar system. We present here the proposed transmitter and system architectures, the initial device design and the results of the simulations performed in order to estimate the source requirements in terms of power, beam quality, and spectral properties to achieve the required measurement accuracy. The laser transmitter is based on two InGaAsP/InP monolithic Master Oscillator Power Amplifiers (MOPAs), providing the ON and OFF wavelengths close to the selected absorption line around 1.57 µm. Each MOPA consists of a frequency stabilized Distributed Feedback (DFB) master oscillator, a modulator section, and a tapered semiconductor amplifier optimized to maximize the optical output power. The design of the space-compliant laser module includes the beam forming optics and the thermoelectric coolers.The proposed system replaces the conventional pulsed source with a modulated continuous wave source using the Random Modulation-Continuous Wave (RM-CW) approach, allowing the designed semiconductor MOPA to be applicable in such applications. The system requirements for obtaining a CO2 retrieval accuracy of 1 ppmv and a spatial resolution of less than 10 meters have been defined. Envelope estimated of the returns indicate that the average power needed is of a few watts and that the main noise source is the ambient noise.

UWB Monocycle Generator based on the non-linear effects of an SOA-integrated structure

In this letter, we propose and experimentally demonstrate a novel and single structure to generate ultra-wideband (UWB) pulses by means of the cross-phase modulation present in a semiconductor optical amplifier unified structure. The key components of this system is an integrated Mach-Zehnder interferometer with two semiconductor optical amplifiers and an optical processing unit. The fusion of these two components permits the generation and customization of UWB monocycle pulses. The polarity of the output pulses is easily modified through the single selection of a specific input port. Moreover, the capacity of transmitting several data sequences is demonstrated and the potentiality to adapt the system to different modulation formats is analyzed.

Simulation and geometrical design of multi-section tapered semiconductor optical amplifiers at 1.57 µm

Fully integrated semiconductor master-oscillator power-amplifiers (MOPA) with a tapered power amplifier are attractive sources for applications requiring high brightness. The geometrical design of the tapered amplifier is crucial to achieve the required power and beam quality. In this work we investigate by numerical simulation the role of the geometrical design in the beam quality and in the maximum achievable power. The simulations were performed with a Quasi-3D model which solves the complete steady-state semiconductor and thermal equations combined with a beam propagation method. The results indicate that large devices with wide taper angles produce higher power with better beam quality than smaller area designs, but at expenses of a higher injection current and lower conversion efficiency.

Characterization of emission regimes in a 1.5 um high brightness MOPA

We present and analyze experimental results on the emission characteristics of a 1.5 ?m distributed feedback tapered master-oscillator power-amplifier in a wide range of steady-state injection conditions, showing different emission regimes under cw operation: stable single frequency emission, multi-frequency Fabry-Perot-like emission, and self-pulsation operation.

Aplicación práctica transceptor BGT24MTR11 : radar Doppler

En los últimos tiempos, los radares han dejado de ser instrumentos utilizados únicamente en aviación, defensa y detección de velocidad. El avance de la tecnología de radiofrecuencia ha permitido la reducción de coste, tamaño y consumo de los componentes radar. Esto ha permitido que cada sea más frecuente el uso del radar en elementos de nuestra vida cotidiana tales como la automoción, la seguridad, la medida de líquidos… Este proyecto se basa en uno de estos nuevos componentes de bajo coste y pequeño tamaño, el transceptor BGT24MTR11. El BGTR24MTR11 integra transmisor, VCO y receptor, los elementos principales para la creación de un radar Doppler en la banda de frecuencia ISM 24-24,25 GHz. A partir de la placa de evaluación de ese transceptor, se aborda el diseño de un prototipo/demostrador de radar Doppler CW en la banda de 24 GHz. Para la generación de frecuencia se utiliza la placa de evaluación del PLL HMC702 y se ha diseñado un PCB a medida cuyas funciones son las de alimentación, programación y amplificación de las señales recibidas por el prototipo. Por último, se comprueba el correcto funcionamiento del prototipo y se verifica su funcionamiento mediante la simulación de dos escenarios de prueba. ABSTRACT. In the recent times, radar systems have changed of being tools used only in aviation, defence and speed detection. Radiofrequency technology improvements have allowed a cost, size and power consumption of the radar components. This is the reason because each time is more frequent the use of radar in elements of our daily life such as automotive, security, liquid measurements… This Project is base don one of this low power and size components, the MMIC transceptor BGT24MTR11. This transceptor integrates the main components needed to make a Doppler radar in the ISM Band (24-24 GHz), the transmitter, the receiver with the low noise amplifier and the VCO. Using the evaluation board of this transceptor, this Project approach the design of a CW Doppler radar prototype/demonstrator in the frequency band of 24 GHz. The frequency generation is based on the use of the HMC702 PLL evaluation board. Moreover, it has been designed a custom PCB whose funcionts are the power supply, programation and amplification of the signals received by the prototype. At the end, the correct operation of the prototype is verified and it is tested simulating two different test scenarios.

Comparing in vitro, in situ, and in vivo experimental data in a three-dimensional model of mammalian cochlear mechanics

Normal mammalian hearing is refined by amplification of the motion of the cochlear partition. This partition, comprising the organ of Corti sandwiched between the basilar and tectorial membranes, contains the outer hair cells that are thought to drive this amplification process. Force generation by outer hair cells has been studied extensively in vitro and in situ, but, to understand cochlear amplification fully, it is necessary to characterize the role played by each of the components of the cochlear partition in vivo. Observations of cochlear partition motion in vivo are severely restricted by its inaccessibility and sensitivity to surgical trauma, so, for the present study, a computer model has been used to simulate the operation of the cochlea under different experimental conditions. In this model, which uniquely retains much of the three-dimensional complexity of the real cochlea, the motions of the basilar and tectorial membranes are fundamentally different during in situ- and in vivo-like conditions. Furthermore, enhanced outer hair cell force generation in vitro leads paradoxically to a decrease in the gain of the cochlear amplifier during sound stimulation to the model in vivo. These results suggest that it is not possible to extrapolate directly from experimental observations made in vitro and in situ to the normal operation of the intact organ in vivo.

Active hair-bundle movements can amplify a hair cell’s response to oscillatory mechanical stimuli

To enhance their mechanical sensitivity and frequency selectivity, hair cells amplify the mechanical stimuli to which they respond. Although cell-body contractions of outer hair cells are thought to mediate the active process in the mammalian cochlea, vertebrates without outer hair cells display highly sensitive, sharply tuned hearing and spontaneous otoacoustic emissions. In these animals the amplifier must reside elsewhere. We report physiological evidence that amplification can stem from active movement of the hair bundle, the hair cell’s mechanosensitive organelle. We performed experiments on hair cells from the sacculus of the bullfrog. Using a two-compartment recording chamber that permits exposure of the hair cell’s apical and basolateral surfaces to different solutions, we examined active hair-bundle motion in circumstances similar to those in vivo. When the apical surface was bathed in artificial endolymph, many hair bundles exhibited spontaneous oscillations of amplitudes as great as 50 nm and frequencies in the range 5 to 40 Hz. We stimulated hair bundles with a flexible glass probe and recorded their mechanical responses with a photometric system. When the stimulus frequency lay within a band enclosing a hair cell’s frequency of spontaneous oscillation, mechanical stimuli as small as ±5 nm entrained the hair-bundle oscillations. For small stimuli, the bundle movement was larger than the stimulus. Because the energy dissipated by viscous drag exceeded the work provided by the stimulus probe, the hair bundles powered their motion and therefore amplified it.

Cochlear mechanisms from a phylogenetic viewpoint

The hearing organ of the inner ear was the last of the paired sense organs of amniotes to undergo formative evolution. As a mechanical sensory organ, the inner-ear hearing organ's function depends highly on its physical structure. Comparative studies suggest that the hearing organ of the earliest amniote vertebrates was small and simple, but possessed hair cells with a cochlear amplifier mechanism, electrical frequency tuning, and incipient micromechanical tuning. The separation of the different groups of amniotes from the stem reptiles occurred relatively early, with the ancestors of the mammals branching off first, approximately 320 million years ago. The evolution of the hearing organ in the three major lines of the descendents of the stem reptiles (e.g., mammals, birds-crocodiles, and lizards-snakes) thus occurred independently over long periods of time. Dramatic and parallel improvements in the middle ear initiated papillar elongation in all lineages, accompanied by increased numbers of sensory cells with enhanced micromechanical tuning and group-specific hair-cell specializations that resulted in unique morphological configurations. This review aims not only to compare structure and function across classification boundaries (the comparative approach), but also to assess how and to what extent fundamental mechanisms were influenced by selection pressures in times past (the phylogenetic viewpoint).

Instrumentação para a caracterização dielétrica de filmes biodegradáveis

A caracterização dielétrica de um material pode ser usada como uma técnica não destrutiva para avaliar e monitorar sua qualidade, bem como no entendimento da relação estrutura-propriedade de um material, através de suas propriedades dielétricas em função da frequência, temperatura, composição química do material, dentre outros. Na literatura há escassez de trabalhos e dados de caracterização dielétrica de filmes a base de biopolímeros. Diante desse contexto, o objetivo deste trabalho foi o desenvolvimento e a construção de uma instrumentação alternativa a equipamentos disponíveis no mercado, como analisadores de rede e de impedância, que pudesse ser utilizada para a caracterização dielétrica de filmes biodegradáveis a base de gelatina. Foi utilizado o método de placas paralelas na determinação da parte real da permissividade conhecida como permissividade relativa ou constante dielétrica (ε\'). O circuito utilizado para a instrumentação foi um oscilador astável com funcionamento baseado no amplificador operacional (741) chaveado pela carga de um capacitor de placas paralelas cujo dielétrico foi uma amostra de filme biodegradável. A partir dos valores da frequência de oscilação e geometria do capacitor, foi possível calcular a capacitância de cada amostra e, consequentemente obter os valores da permissividade relativa do filme, usando relações básicas bem estabelecidas. Os filmes de gelatina foram produzidos pela técnica de casting sendo utilizados como plastificantes o glicerol (G), o sorbitol (S) e suas misturas, na proporção (G:S) de 30:70, 50:50 e 70:30. Os filmes foram caracterizados quanto à umidade e cristalinidade. A permissividade relativa (ε\') dos filmes, determinada a temperatura ambiente, foi avaliada em função da frequência (5 a 50 kHz), tempo de armazenamento, do teor de umidade e tipo de plastificante. A instrumentação projetada e construída foi capaz de medir com precisão a permissividade relativa das amostras, sendo que essa propriedade diminuiu com o aumento da frequência para todos os filmes. Mantendo-se a frequência constante, não houve variação de ε\' para os filmes de gelatina, independente do plastificante, ao longo de um mês de armazenamento a 24 ± 3 °C. O efeito da umidade foi observado em frequências menores que 25 kHz, sendo que quanto maior o teor de umidade maior a permissividade relativa. O efeito do tipo de plastificante na permissividade relativa dos filmes foi observado a baixas frequências (5 kHz) e filmes plastificados com sorbitol apresentaram maiores valores de ε\'. Os filmes plastificados com maior teor de umidade apresentaram menor cristalinidade, portanto maior mobilidade molecular e consequentemente maior a permissividade relativa.

Field and laboratory performance evaluation of a field-blended rubber asphalt.

ALICE is one of four major experiments of particle accelerator LHC installed in the European laboratory CERN. The management committee of the LHC accelerator has just approved a program update for this experiment. Among the upgrades planned for the coming years of the ALICE experiment is to improve the resolution and tracking efficiency maintaining the excellent particles identification ability, and to increase the read-out event rate to 100 KHz. In order to achieve this, it is necessary to update the Time Projection Chamber detector (TPC) and Muon tracking (MCH) detector modifying the read-out electronics, which is not suitable for this migration. To overcome this limitation the design, fabrication and experimental test of new ASIC named SAMPA has been proposed . This ASIC will support both positive and negative polarities, with 32 channels per chip and continuous data readout with smaller power consumption than the previous versions. This work aims to design, fabrication and experimental test of a readout front-end in 130nm CMOS technology with configurable polarity (positive/negative), peaking time and sensitivity. The new SAMPA ASIC can be used in both chambers (TPC and MCH). The proposed front-end is composed of a Charge Sensitive Amplifier (CSA) and a Semi-Gaussian shaper. In order to obtain an ASIC integrating 32 channels per chip, the design of the proposed front-end requires small area and low power consumption, but at the same time requires low noise. In this sense, a new Noise and PSRR (Power Supply Rejection Ratio) improvement technique for the CSA design without power and area impact is proposed in this work. The analysis and equations of the proposed circuit are presented which were verified by electrical simulations and experimental test of a produced chip with 5 channels of the designed front-end. The measured equivalent noise charge was <550e for 30mV/fC of sensitivity at a input capacitance of 18.5pF. The total core area of the front-end was 2300?m × 150?m, and the measured total power consumption was 9.1mW per channel.