Electronic structure and electron g factors of HgTe quantum dots

The electronic structure and electron g factors of HgTe quantum dots are investigated, in the framework of the eight-band effective-mass approximation. It is found that the electron states of quantum spheres have aspheric properties due to the interaction between the conduction band and valence band. The highest hole states are S (l = 0) states, when the radius is smaller than 9.4 nm. the same as the lowest electron states. Thus strong luminescence from H-Te quantum dots with radius smaller than 9.4 nm has been observed (Rogach et al 2001 Phys. Statits Solidi b 224 153). The bandgap of H-Te quantum spheres is calculated and compared with earlier experimental results (Harrison et al 2000 Pure Appl. Chem. 72 295). Due to the quantum confinement effect, the bandgap of the small HgTe quantum spheres is positive. The electron g factors of HgTe quantum spheres decrease with increasing radius and are nearly 2 when the radius is very small. The electron g factors of HgTe quantum ellipsoids are also investigated. We found that as some of the three dimensions increase, the electron g factors decrease. The more the dimensions increase, the more the g factors decrease. The dimensions perpendicular to the direction of the magnetic field affect the g factors more than the other dimension.

Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer

Molecular beam epitaxy was employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal current was effectively reduced and electron resonant tunneling through quantum dots under both forward and reverse biased conditions was observed at relatively high temperature of 77 K. The ground states of quantum dots were found to be at similar to 0.19 eV below the conduction band of GaAs matrix. The theoretical computations were in conformity with experimental data. (c) 2006 The Electrochemical Society.

Quantum dots in glass spherical microcavity

Glass spherical microcavities containing CdSexS1-x semiconductor quantum dots (QDs) are fabricated. The coupling between the optical emission of embedded CdSexS1-x QDs and spherical cavity modes is realized. When the luminescence of QDs is excited by a laser beam, the strong whispering gallery mode resonance with high Q factors is achieved in the photoluminescence spectra. (C) 2001 American Institute of Physics.

Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100)

The effect of Si overgrowth on the structural and luminescence properties of strained Ge layer grown on Si(1 0 0) is studied. Capping Si leads to the dissolution of Ge island apex and reduced island height. The structural changes in island shape, especially in chemical composition during Si overgrowth have a large effect on the PL properties. The integrated PL intensity of Ge layer increases and there are large blue shifts in peak energies after capping Si. The PL spectra from buried Ge layer are consistent with type-II band alignment in SiGe/Si. We show that the PL properties from buried Ge layer may be tailored by modifying the cap layer growth conditions as well as post-growth annealing. (C) 1999 Elsevier Science B.V. All rights reserved.

Cubic InGaN grown by MOCVD

We report on the growth of high-quality cubic phase InGaN on GaAs by MOCVD. The cubic InGaN layers are grown on cubic GaN buffer layers on GaAs (001) substrates. The surface morphology of the films are mirror-like. The cubic nature of the InGaN films is obtained by Xray diffraction (XRD) measurements. The InGaN layers show strong photoluminescence (PL) at room temperature. Neither emission peak from wurtzite GaN nor yellow luminescence is observed in our films. The highest In content as determined by XRD is about 17% with an PL emission wavelength of 450 nm. The FWHM of the cubic InGaN PL peak are 153 meV and 216 meV for 427 nm and 450 nm emissions, respectively. It is found that the In compositions determined from XRD are not in agreement with those estimated from PL measurements. The reasons for this disagreement are discussed.

SOI-based thermo-optic waveguide switch matrix with spot size converters

A SOI-based thermo-optic waveguide switch matrix worked at 1.55 mu m, integrated with spot size converters is designed and fabricated for the first time. The insertion loss and polarization dependent loss are less than 13dB and 2dB, respectively. The extinction ratio is larger than 19dB. The response time is less than 5 mu s and the power consumption of the switch cell is about 200mW.

多层企业应用的关键:J2EE应用服务器

Application server provides a platform that helps users to create,deploy,execute,integrate and maintainmulti-tier enterprise applications. This paper analyzes a variety of implementation strategies of application servers,th eh gives evaluating features for J2EE application server and compares the 4 representative products.

比例方程组与MPI同步通信静态死锁检测

介绍了一种MPI程序死锁检测的静态方法以及该方法所处理的程序模型.为实现该方法,提出了比例方程组(一种特殊线性方程组)的概念并设计了求解方程组最简解的线性时空复杂度的高效算法.算法由一个四遍扫描过程与一个主控程序构成.主控程序用来处理并行计算节点计算机构成的划分.四遍扫描过程采用深度优先搜索方法确定方程组中各变元之间的比例关系.通过该算法所获得的最简解,任意多个变元之间的比例关系能在常数时间内获得.证明了该算法的正确性,并采用Java语言实现了该算法的标准程序库.该程序库目前已运行于MPI同步通信静态死锁检测的软件框架中.

适用于卫星网络的安全认证协议设计与仿真

随着卫星组网技术的发展，卫星网络安全防护技术日益受到人们的关注，安全认证是其中一项关键技术。本文在建立卫星网络安全认证模型的基础上，设计了入网认证协议和端到端认证协议，并构建了安全认证仿真系统，以语音和视频业务为例对协议进行了仿真验证。本文取得的成果主要包括： （1）建立了卫星网络安全认证模型。分析了典型卫星网络的组成、特点及对安全协议设计的影响，构建了包括节点安全系统、安全通信过程和安全认证过程在内的卫星网络安全认证模型。 （2）设计了卫星网络入网认证协议。该协议主要基于散列函数和异或运算，具有计算量小的优点，能够抵抗冒充、篡改、重放等常见攻击。 （3）设计了卫星网络端到端认证协议。该协议基于ECC密码系统，能够实现节点之间的双向认证，同时还会协商出具有完全前向私密性的共享会话密钥。该协议具有较好的计算性能，适于计算资源受限的环境，能够抵抗冒充、篡改、重放、未知密钥共享等常见攻击。 （4）设计了安全认证仿真系统。对入网认证协议和端到端认证协议进行了仿真实现，建立了星间链路、上下行链路的传输信道模型、及语音和视频业务模型，实现了业务过程仿真。 （5）以语音和视频业务为例，对卫星网络安全认证协议进行了仿真验证。结果表明，部署安全认证和加密服务后，业务启动存在秒级延迟，但服务质量基本不会受到影响。