The Region between State and Nation: British and Irish conceptions of Northern Ireland as a European Region

This article investigates the concept of regionalism in the EU and its relationship to changing conceptions of the nation-statehood in Ireland and Britain. More specifically, it examines how the notion of regionalism has developed in official discourse during states' adaptation to both internal challenges and the process of European integration. I explore this question through an analysis of the British and Irish state elites approaches to the Northern Ireland conflict and their perceptions of European regionalism in this context. In identifying the differences and, indeed, similarities between these states' approaches to European and regional dynamics, I develop new perspective on post-Agreement Northern Ireland and the concept of multilevel governance.

Transition region velocity oscillations observed by EUNIS-06

Spectroscopic measurements of NOAA AR 10871, obtained with the Extreme Ultraviolet Normal Incidence Spectrograph (EUNIS) sounding rocket instrument on 2006 April 12, reveal velocity oscillations in the He II 303.8 angstrom emission line formed at T approximate to 5; 10(4) K. The oscillations appear to arise in a bright active region loop arcade about 25 '' wide which crosses the EUNIS slit. The period of these transition region oscillations is 26 +/- 4 s, coupled with a velocity amplitude of +/- 10 km s(-1), detected over four complete cycles. Similar oscillations are observed in lines formed at temperatures up to T approximate to 4; 10(5) K, but we find no evidence for the coupling of these velocity oscillations with corresponding phenomena in the corona. We interpret the detected oscillations as originating from an almost purely adiabatic plasma, and infer that they are generated by the resonant transmission of MHD waves through the lower active region atmospheres. Through the use of seismological techniques, we establish that the observed velocity oscillations display wave properties most characteristic of fast body global sausage modes.

High-frequency oscillations in a solar active region observed with the RAPID DUAL IMAGER

High-cadence, synchronized, multiwavelength optical observations of a solar active region (NOAA 10794) are presented. The data were obtained with the Dunn Solar Telescope at the National Solar Observatory/Sacramento Peak using a newly developed camera system: the rapid dual imager. Wavelet analysis is undertaken to search for intensity related oscillatory signatures, and periodicities ranging from 20 to 370 s are found with significance levels exceeding 95%. Observations in the H-α blue wing show more penumbral oscillatory phenomena when compared to simultaneous G-band observations. The H-α oscillations are interpreted as the signatures of plasma motions with a mean velocity of 20 km s-1. The strong oscillatory power over H-α blue-wing and G-band penumbral bright grains is an indication of the Evershed flow with frequencies higher than previously reported.

Characterizing the marine Natura 2000 network for the Atlantic region

1. One of the goals for Natura 2000, a key European Community programme of nature conservation, is to produce a network of protected areas. An analysis of the Natura 2000 marine sites proposed in the most recently agreed list for the Atlantic region (northern Portugal to Denmark, n = 298) was used to characterize the network in terms of site areas and inter-site distances. Sites were considered as part of the network when they included any of the marine Natura 2000 Annex I habitat types found in the Atlantic region (excluding lagoons).

Regio- and stereo-selective dioxygenase-catalysed cis-dihydroxylation of fjord-region polycyclic arenes

Bacterial dioxygenase-catalysed cis-dihydroxylation of the tetracyclic arenes benzo[c]phenanthrene 2, and the isosteric compounds benzo[b]naphtho[1,2-d]furan 8, and benzo[b]naphtho[1,2-d]thiophene 9, has been found to occur exclusively at fjord-region bonds. The resulting cis-dihydrodiols 7, 10 and 11 were found to be enantiopure and of similar absolute configuration. cis-Dihydroxylation was also observed in the pseudo-fjord region of the 8,9,10,11-tetrahydro-precursors (12 and 13) of benzo[b]naphtho[1,2-d]furan 8, and benzo[b]naphtho[1,2-d]thiophene 9, to yield the corresponding enantiopure hexahydro cis-diols 14 and 15. A novel tandem cis-dihydroxylation and bis-desaturation of the tetrahydro-substrate, tetrahydrobenzo[b]naphtho[1,2-d]thiophene 13, catalysed by biphenyl dioxygenase, was found to yield the fjord-region cis-dihydrodiol 17 of benzo[b]naphtho[1,2-d]thiophene 9.

Improving f(MAX)/f(T) ratio in FinFETs using source/drain extension region engineering

A design methodology to optimise the ratio of maximum oscillation frequency to cutoff frequency, f(MAX)/f(T), in 60 nm FinFETs is presented. Results show that 25 to 60% improvement in f(MAX)/f(T) at drain currents of 20-300 mu A/mu m can be achieved in a non-overlap gate-source/drain architecture. The reported work provides new insights into the design and optimisation of nanoscale FinFETs for RF applications.

Source/drain extension region engineering in nanoscale double gate SOI MOSFETs: Novel design methodology for low-voltage analog applications

The present paper proposes for the first time, a novel design methodology based on the optimization of source/drain extension (SDE) regions to significantly improve the trade-off between intrinsic voltage gain (A(vo)) and cut-off frequency (f(T)) in nanoscale double gate (DG) devices. Our results show that an optimally designed 25 nm gate length SDE region engineered DG MOSFET operating at drain current of 10 mu A/mu m, exhibits up to 65% improvement in intrinsic voltage gain and 85% in cut-off frequency over devices designed with abrupt SIDE regions. The influence of spacer width, lateral source/drain doping gradient and symmetric as well as asymmetrically designed SDE regions on key analog figures of merit (FOM) such as transconductance (g(m)), transconductance-to-current ratio (g(m)/I-ds), Early voltage (V-EA), output conductance (g(ds)) and gate capacitances are examined in detail. The present work provides new opportunities for realizing future low-voltage/low-power analog circuits with nanoscale SDE engineered DG MOSFETs. (C) 2007 Elsevier B.V. All rights reserved.