Improving f(MAX)/f(T) ratio in FinFETs using source/drain extension region engineering
Data(s) |
2008
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Resumo |
A design methodology to optimise the ratio of maximum oscillation frequency to cutoff frequency, f(MAX)/f(T), in 60 nm FinFETs is presented. Results show that 25 to 60% improvement in f(MAX)/f(T) at drain currents of 20-300 mu A/mu m can be achieved in a non-overlap gate-source/drain architecture. The reported work provides new insights into the design and optimisation of nanoscale FinFETs for RF applications. |
Identificador | |
Idioma(s) |
eng |
Direitos |
info:eu-repo/semantics/restrictedAccess |
Fonte |
Kranti , A & Armstrong , A 2008 , ' Improving f(MAX)/f(T) ratio in FinFETs using source/drain extension region engineering ' Electronics Letters , vol 44 , pp. 825-U63 . DOI: 10.1049/e1:20080696 |
Tipo |
article |