Tungsten Silicide Contacts to Polycrystalline Silicon and Silicon-Germanium Alloys

Novel CVD WSi2 technology with low series and contact resistance in SiGe HBTs was achieved. Specific contact resistance to Si1-xGex with 0

Current-induced transition in atomic-sized contacts of metallic alloys

We have measured conductance histograms of atomic point contacts made from the noble-transition-metal alloys CuNi, AgPd, and AuPt for a concentration ratio of 1:1. For all alloys these histograms at low-bias voltage (below 300 mV) resemble those of the noble metals, whereas at high bias (above 300 mV) they resemble those of the transition metals. We interpret this effect as a change in the composition of the point contact with bias voltage. We discuss possible explanations in terms of electromigration and differential diffusion induced by current heating.

Dielectronic recombination in He-like titanium ions

Dielectronic recombination (DR) has been studied in highly charged He-like Ti ions using an electron beam ion trap. X-rays emitted from radiative recombination (RR) and DR were observed as the electron beam energy was scanned through the resonances. Differential DR resonant strengths were determined by normalizing the DR x-ray intensity to the RR intensity using theoretical RR cross sections. KLn (2 less than or equal to n less than or equal to 5) resonant strengths were determined for He-like Ti ions. The differential resonant strengths were calibrated without reference to any theoretical DR calculations while the electron energy scale was derived with reference to the well-known energy for ionization of the He-like and H-like ions from the ground state. Calibration in this way facilitates a more exacting comparison between theory and experiment than has been reported previously. To facilitate this comparison, total and differential theoretical resonance strengths were calculated. These calculations were found to be in good agreement with the measured results.

Branching ratios of x-ray photons from dielectronic recombination processes in H-like titanium ions

In dielectronic recombination of hydrogenlike ions an intermediate doubly excited heliumlike ion is formed. Since the K shell is empty, both excited electrons can decay sequentially to the ground state. In this paper we analyze the x-ray radiation emitted from doubly and singly excited heliumlike titanium ions produced inside the Tokyo electron beam ion trap. Theoretical population densities of the singly excited states after the first transition and the transition probabilities of these states into the ground state were also calculated. This allowed theoretical branching ratios to be determined for each manifold. These branching ratios are compared to the experimentally obtained x-ray distribution by fitting across the relevant peak using a convolution of the theoretically obtained resonance strengths and energies. By taking into account 2E1 transitions which are not observed in the experiment, the measured and calculated ratios agree well. This method provides a valuable insight into the transition dynamics of excited highly charged ions.