A low noise charge sensitive preamplifier with switch control feedback resistance

In this paper, the design and analysis of a new low noise charge sensitive preamplifier for silicon strip, Si(Li), CdZnTe and CsI detectors etc. with switch control feedback resistance were described, the entire system to be built using the CMOS transistors. The circuit configuration of the CSP proposed in this paper can be adopted to develop CMOS-based Application Specific Integrated Circuit further for Front End Electronics of read-out system of nuclear physics, particle physics and astrophysics research, etc. This work is an implemented design that we succeed after a simulation to obtain a rise time less than 3ns, the output resistance less than 94 Omega and the linearity almost good.

Can the nuclear symmetry potential at supra-saturation densities be negative?

In the framework of an isospin-dependent Boltzmann-Uehling-Uhlenbeck (IBUU) transport model, for the central Au-197 + Au-197 reaction at an incident beam energy of 400 MeV/nucleon, the effect of nuclear symmetry potential at supra-saturation densities on the preequilibrium clusters emission is studied. It is found that for the positive symmetry potential at supra-saturation densities the neutron-to-proton ratio of lighter clusters with mass number A less than or similar to 3 [(n/p)(A less than or similar to 3)] is larger than that of the heavier clusters with mass number A > 3 [(n/p)(A>3)], whereas for the negative symmetry potential at supra-saturation densities the (n/p)(A less than or similar to 3) is smaller than the (n/p)(A>3). This may be considered as a probe of the negative symmetry potential at supra-saturation densities.

a requirement traceability refinement method based on relevance feedback

Knowledge Systems Institute Graduate School

Reducing H2S production by O-2 feedback control during large-scale sewage sludge composting

Hydrogen sulfide (H2S) production patterns and the influence of oxygen (O-2) concentration were studied based on a well operated composting plant. A real-time, online multi-gas detection system was applied to monitor the concentrations of H2S and O-2 in the pile during composting. The results indicate that H2S was mainly produced during the early stage of composting, especially during the first 40 h. Lack of available O-2 was the main reason for H2S production. Maintaining the O-2 concentration higher than 14% in the pile could reduce H2S production. This study suggests that shortening the interval between aeration or aerating continuously to maintain a high O-2 concentration in the pile was an effective strategy for restraining H2S production in sewage sludge composting. (C) 2010 Elsevier Ltd. All rights reserved.

Studies on alkaloids binding to GC-rich human survivin promoter DNA using positive and negative ion electrospray ionization mass spectrometry

Electrospray ionization mass spectrometry (ESI-MS) was used to investigate the binding of 13 alkaloids to two GC-rich DNA duplexes which are critical sequences in human survivin promoter. Negative ion ESI-MS was first applied to screen the binding of the alkaloids to the duplexes. Six alkaloids (including berberine, jatrorrhizine, palmatine, reserpine, berbamine, and tetrandrine) show complexation with the target DNA sequences. Relative binding affinities were estimated from the negative ion ESI data, and the alkaloids show a binding preference to the duplex with higher GC content. Positive ion ESI mass spectra of the complexes were also recorded and compared with those obtained in negative ion mode.

Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum

Negative differential resistance (NDR) and memory phenomenon have been realized in current-voltage (I-V) characteristics of indium tin oxide/tris(8-hydroxyquinoline) aluminum/aluminum devices. The I-V curves have been divided into three operational regions that are associated with different working regimes of the devices: (i) bistable region, (ii) NDR region, and (iii) monotonic region. The bistable region disappeared after a couple of voltage sweeps from zero to a positive voltage. The bistable nature can be reinstated by applying a suitable negative voltage.

Low-threshold conjugated polymer distributed feedback lasers on InP substrate

We demonstrate a low threshold polymer solid state thin-film distributed feedback (DFB) laser on an InP substrate with the DFB structure. The used gain medium is conjugated polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylenevinylene] (MEH-PPV) doped polystyrene (PS) and formed by drop-coating method. The second order Bragg scattering region on the InP substrate gave rise to strong feedback, thus a lasing emission at 638.9nm with a line width of 1.2nm is realized when pumped by a 532nm frequency-doubled Nd: YAG pulsed laser. The devices show a laser threshold as low as 7 nJ/pulse.

Realization of negative differential resistance and switching devices based on copper phthalocyanine by the control of evaporation rate

We have observed, respectively, a negative differential resistance (NDR) and switching conduction in current-voltage (I-V) characteristics of organic diodes based on copper phthalocyanine (CuPc) film sandwiched between indium-tin-oxide (ITO) and aluminum (Al) by controlling the evaporation rate. The NDR effect is repeatable which can be well, controlled by sweep rate and start voltage, and the switching exhibits write-once-read-many-times (WORM) memory characteristics. The traps in the organic layer and interfacial dipole have been used to explain the NDR effect and switching conduction. This opens up potential applications for CuPc organic semiconductor in low power memory and logic circuits.

A study of isomeric diglycosyl flavonoids by SORI CID of Fourier transform ion cyclotron mass Spectrometry in negative ion mode

High-resolution Sustained off resonance irradiation (SORI) CID was employed to distinguish four pairs of isomeric diglycosyl flavonoids in the negative mode using the electrospray ionization Fourier transform ion cyclotron resonance mass spectrometry (ESI FTICR MS). All of these isomers can be distinguished via MS/MS data. For these diglycosyl flavones and flavanones, the deprotonated alpha 1-->6 linkage diglycosyl flavonoids produce fewer fragments than the alpha 1-->2 linkage type compounds and the Retro-Diels-Alder (RDA) reaction in MS/MS only takes place when the aglycone is a flavanone and glycosylated with an alpha 1-->2 intersaccharide linkage disaccharide. The deprotonation sites after collisional activation are discussed according to the high mass accuracy and high-resolution data of tandem spectrometry. Some of these high-resolution SORI CID product ions from alpha 1-->2 linkage diglycosyl flavonoids involve multibond cleavages; the possible mechanism is discussed based on the computer modeling using Gaussian 03 program package at the B3LYP/6-31G level of theory. Unambiguous elementary composition data provides fragmentation information that has not been reported previously.

Negative differential resistance and memory effect in diodes based on 1,4-dibenzyl C60 and zinc phthalocyanine doped polystyrene hybrid material

Negative differential resistance (NDR) and memory effect were observed in diodes based on 1,4-dibenzyl C60 (DBC) and zinc phthalocyanine doped polystyrene hybrid material. Certain negative starting sweeping voltages led to a reproducible NDR, making the hybrid material a promising candidate in memory devices. It was found that the introduction of DBC enhanced the ON/OFF current ratio and significantly improved the memory stability. The ON/OFF current ratio was up to 2 orders of magnitude. The write-read-erase-reread cycles were more than 10(6), and the retention time reached 10 000 s without current degradation.

Crystal structure and electrochemical properties of rare earth non-stoichiometric AB(5)-type alloy as negative electrode material in Ni-MH battery

The La0.85MgxNi4.5Co0.35Al0.15 (0.05less than or equal toxless than or equal to0.35) system compounds have been prepared by are melting method under Ar atmosphere. X-ray diffraction (XRD) analysis reveals that the as-prepared alloys have different lattice parameters and cell volumes. The electrochemical properties of these alloys have been studied through the charge-discharge recycle testing at different temperatures and discharge currents. It is found that the La0.85Mg0.25Ni4.5Co0.35Al0.(15) alloy electrode is capable of performing high-rate discharge. Moreover, it has very excellent electrochemical properties as negative electrode materials in Ni-MH battery at low temperature, even at -40degreesC.

Negative differential resistance effect in organic devices based on an anthracene derivative

The authors observed a negative differential resistance (NDR) in organic devices consisting of 9,10-bis-(9,9-diphenyl-9H-fluoren-2-yl)-anthracene (DPFA) sandwiched between Ag and indium tin oxide electrodes. The large NDR shown in current-voltage characteristics is reproducible, resulting in that the organic devices can be electrically switched between a high conductance state (on state) and a low conductance state (off state). It can be found that the currents at both on to off states are space-charge limited and attributed to the electron traps at the Ag/DPFA interface. The large and reproducible NDR makes the devices of tremendous potential in low power memory and logic circuits.

Direct patterning of negative nanostructures on self-assembled monolayers of 16-mercaptohexadecanoic acid on Au(111) substrate via dip-pen nanolithography

Both bare and self-assembled monolayer (SAM) protected gold substrate could be etched by allyl bromide according to atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS) and inductively coupled plasma mass spectrometric (ICPMS) analysis results. With this allyl bromide ink material, negative nanopatterns could be fabricated directly by dip-pen nanolithography (DPN) on SAMs of 16-mercaptohexadecanoic acid (MHA) on Au(111) substrate. A tip-promoted etching mechanism was proposed where the gold-reactive ink could penetrate the MHA resist film through tip-induced defects resulting in local corrosive removal of the gold substrate. The fabrication mechanism was also confirmed by electrochemical characterization, energy dispersive spectroscopy (EDS) analysis and fabrication of positive nanopatterns via a used DPN tip.