ZnO and ZnO/polyglycine modified carbon paste electrode for electrochemical investigation of dopamine

Present work describes the characterization of commercially available ZnO and its electrochemical investigation of dopamine in the presence of ascorbic acid. ZnO was characterized by powder XRD, UV-visible absorption, fluorescence, infrared spectroscopy and scanning electron microscopy. The carbon paste electrode was modified with ZnO and ZnO/polyglycine for further electrochemical investigation of dopamine. The modified electrode shows good electrocatalytic activity towards the detection of dopamine with a reduction in overpotential. The ZnO/polyglycine modified carbon paste electrode (CPE/ZnO/Pgl) shows excellent electrochemical enhancement of peak currents for both dopamine (DA) and ascorbic acid (AA) and for simultaneous detection of DA in the presence of high concentrations of AA with 0.214 V oxidation peak potential differences between them at pH 7.4. From the scan rate variation and concentration, the oxidation of DA and AA was found to be adsorption-controlled. The use of CPE/ZnO/Pgl is demonstrated for the detection of DA in blood serum and injection samples. This journal is © The Royal Society of Chemistry 2012.

Substrate temperature influenced physical properties of silicon MOS devices with TiO2 gate dielectric

DC reactive magnetron sputtering technique was employed for deposition of titanium dioxide (TiO2) films. The films were formed on Corning glass and p-Si (100) substrates by sputtering of titanium target in an oxygen partial pressure of 6x10-2 Pa and at different substrate temperatures in the range 303 673 K. The films formed at 303 K were X-ray amorphous whereas those deposited at substrate temperatures?=?473 K were transformed into polycrystalline nature with anatase phase of TiO2. Fourier transform infrared spectroscopic studies confirmed the presence of characteristic bonding configuration of TiO2. The surface morphology of the films was significantly influenced by the substrate temperature. MOS capacitor with Al/TiO2/p-Si sandwich structure was fabricated and performed currentvoltage and capacitancevoltage characteristics. At an applied gate voltage of 1.5 V, the leakage current density of the device decreased from 1.8?x?10-6 to 5.4?x?10-8 A/cm2 with the increase of substrate temperature from 303 to 673 K. The electrical conduction in the MOS structure was more predominant with Schottky emission and Fowler-Nordheim conduction. The dielectric constant (at 1 MHz) of the films increased from 6 to 20 with increase of substrate temperature. The optical band gap of the films increased from 3.50 to 3.56 eV and refractive index from 2.20 to 2.37 with the increase of substrate temperature from 303 to 673 K. Copyright (c) 2012 John Wiley & Sons, Ltd.

Integrated magnetics based multi-port bidirectional DC-DC converter topology for discontinuous-mode operation

A new type of multi-port isolated bidirectional DC-DC converter is proposed in this study. In the proposed converter, transfer of power takes place through addition of magnetomotive forces generated by multiple windings on a common transformer core. This eliminates the need for a centralised storage capacitor to interface all the ports. Hence, the requirement of an additional power transfer stage from the centralised capacitor can also be eliminated. The converter can be used for a multi-input, multi-output (MIMO) system. A pulse width modulation (PWM) strategy for controlling simultaneous power flow in the MIMO converter is also proposed. The proposed PWM scheme works in the discontinuous conduction mode. The leakage inductance can be chosen to aid power transfer. By using the proposed converter topology and PWM scheme, the need to compute power flow equations to determine the magnitude and direction of power flow between ports is alleviated. Instead, a simple controller structure based on average current control can be used to control the power flow. This study discusses the operating phases of the proposed multi-port converter along with its PWM scheme, the design process for each of the ports and finally experimental waveforms that validate the multi-port scheme.

Sum rules and three point functions

Sum rules constraining the R-current spectral densities are derived holographically for the case of D3-branes, M2-branes and M5-branes all at finite chemical potentials. In each of the cases the sum rule relates a certain integral of the spectral density over the frequency to terms which depend both on long distance physics, hydrodynamics and short distance physics of the theory. The terms which which depend on the short distance physics result from the presence of certain chiral primaries in the OPE of two it-currents which are turned on at finite chemical potential. Since these sum rules contain information of the OPE they provide an alternate method to obtain the structure constants of the two R-currents and the chiral primary. As a consistency check we show that the 3 point function derived from the sum rule precisely matches with that obtained using Witten diagrams.

Reactivities of Modified and Unmodified Exfoliated Graphite Electrodes in Selected Redox Systems

The electrochemical profiles of exfoliated graphite electrodes (EG) and glassy carbon electrodes (GCE) were recorded using cyclic voltammetry and square wave voltammetry in the presence of various supporting electrolytes and Fe(CN)(6)](3-/4-), Ru(NH3)(6)](2+/3+), ferrocene redox probes. In the supporting electrolytes (KCl, H2SO4, NaOH, tetrabutylammoniumtetraflouroborate, phosphate buffers), the potential windows of EG were found in some cases to be about 200 mV larger than that of GCE. The electroactive surface area of EG was estimated to be 19.5 % larger than the GCE which resulted in higher peak currents on the EG electrode. Furthermore, EG was modified with various nanomaterials such as poly (propylene imine) dendrimer, gold nanoparticles, and dendrimer-gold nanoparticles composite. The morphologies of the modified electrodes were studied using scanning electron microscopy and their electrochemical reactivities in the three redox probes were investigated. The current and the reversibility of redox probes were enhanced with the presence of modifiers in different degrees with dendrimer and gold nanoparticles having a favorable edge.

Electrothermal Ageing of Epoxy Nanocomposites

Constant stress accelerated ageing experiments were conducted on unfilled epoxy and epoxy alumina nanocomposites with different filler loadings of 0.1, 1 and 5 wt%. Electrical (6 kV/mm), thermal (60 degrees C) and combined electrothermal (6 kV/mm and 60 degrees C) ageing experiments were performed for a duration of 250 h. The leakage current through the samples were continuously monitored and the variation in the tan delta values with ageing duration was also monitored. It was observed that the increase in the tan delta value with ageing duration was less for the epoxy alumina nanocomposites as compared to the unfilled epoxy. Dielectric spectroscopy measurements were performed on the samples before and after the ageing in the frequency range of 10(-2) to 10(6) Hz. The permittivity and tan delta values were found to increase in the low frequency range. The volume resistivity of unfilled epoxy and epoxy alumina nanocomposites were also measured before and after the ageing. The volume resistivity improved marginally for the thermally aged samples, but reduced for the electrically aged and the electrothermally aged samples. The decrease in the value of volume resistivity was more for the multistress aged unfilled epoxy samples as compared to the multistress aged epoxy alumina nanocomposites. It was also observed that the unfilled epoxy samples having a higher value of tan delta failed first. The time to failure of the samples showed an increasing trend with an increase in the nano filler loading of epoxy alumina nanocomposites.

Multilevel Dodecagonal Voltage Space Vector Generation using Flying Capacitor topology for Induction motor drives

In this paper, a multilevel flying capacitor inverter topology suitable for generating multilevel dodecagonal space vectors for an induction motor drive, is proposed. Because of the dodecagonal space vectors, it has increased modulation range with the absence of all 6n +/- 1, (n=odd) harmonics in the phase voltage and currents. The topology, realized by flying capacitor three level inverters feeding an open-end winding induction motor, does not suffer the neutral point voltage imbalance issues seen in NPC inverters and the capacitors have inherent charge-balancing capability with PWM control using switching state redundancies. Furthermore, the proposed technique uses lesser number of power supplies compared to cascaded H-bridge or NPC based dodecagonal schemes and has better ride-through capability. Finally, the voltage control is obtained through a simple carrier-based space vector PWM scheme implemented on a DSP.

A Multilevel Inverter Scheme With Dodecagonal Voltage Space Vectors Based on Flying Capacitor Topology for Induction Motor Drives

This paper presents a multilevel inverter topology suitable for the generation of dodecagonal space vectors instead of hexagonal space vectors as in the case of conventional schemes. This feature eliminates all the 6n +/- 1 (n = odd) harmonics from the phase voltages and currents in the entire modulation range with an increase in the linear modulation range. The topology is realized by flying capacitor-based three-level inverters feeding from two ends of an open-end winding induction motor with asymmetric dc links. The flying capacitor voltages are tightly controlled throughout the modulation range using redundant switching states for any load power factor. A simple and fast carrier-based space-vector pulsewidth modulation (PWM) scheme is also proposed for the topology which utilizes only the sampled amplitudes of the reference wave for the PWM timing computation.

Adaptive power optimization of on-chip SNUCA cache on tiled chip multicore architecture using remap policy

Advances in technology have increased the number of cores and size of caches present on chip multicore platforms(CMPs). As a result, leakage power consumption of on-chip caches has already become a major power consuming component of the memory subsystem. We propose to reduce leakage power consumption in static nonuniform cache architecture(SNUCA) on a tiled CMP by dynamically varying the number of cache slices used and switching off unused cache slices. A cache slice in a tile includes all cache banks present in that tile. Switched-off cache slices are remapped considering the communication costs to reduce cache usage with minimal impact on execution time. This saves leakage power consumption in switched-off L2 cache slices. On an average, there map policy achieves 41% and 49% higher EDP savings compared to static and dynamic NUCA (DNUCA) cache policies on a scalable tiled CMP, respectively.

Basic features of current induced/shared by cables mounted on down conductors/towers during stroke interception

The telecommunication, broadcasting and other instrumented towers carry power and/or signal cables from their ground end to their upper regions. During a direct hit to the tower, significant induction can occur to these mounted cables. In order to provide adequate protection to the equipments connected to them, protection schemes have been evolved in the literature. Development of more effective protection schemes requires a quantitative knowledge on various parameters. However, such quantitative knowledge is difficult to find at present. Amongst several of these aspects, the present work aims to investigate on the two important aspects: (i) what would be the nature of the induced currents and (ii) what will be the current sharing if as per the practice, the sheath of the cable is connected to the down conductor/tower. These aspects will be useful in design of protection schemes and also in analyzing the field structure around instrumented towers.

Correlation between corona current and radio interference due to high voltage insulator string

The Radio Interference (RI) from electric power transmission line hardware, if not controlled, poses serious electromagnetic interference to system in the vicinity. The present work mainly concerns with the RI from the insulator string along with the associated line hardware. The laboratory testing for the RI levels are carried out through the measurement of the conducted radio interference levels. However such measurements do not really locate the coronating point, as well as, the mode of corona. At the same time experience shows that it is rather difficult to locate the coronating points by mere inspection. After a thorough look into the intricacies of the problem, it is ascertained that the measurement of associated ground end currents could give a better picture of the prevailing corona modes and their intensities. A study on the same is attempted in the present work. Various intricacies of the problem,features of ground end current pulses and its correlation with RI are dealt with. Owing to the complexity of such experimental investigations, the study made is not fully complete nevertheless it seems to be first of its kind.

Support vector machine based high speed protection relay for EHV/UHV transmission line

This paper presents a fast and accurate relaying technique for a long 765kv UHV transmission line based on support vector machine. For a long EHV/UHV transmission line with large distributed capacitance, a traditional distance relay which uses a lumped parameter model of the transmission line can cause malfunction of the relay. With a frequency of 1kHz, 1/4th cycle of instantaneous values of currents and voltages of all phases at the relying end are fed to Support Vector Machine(SVM). The SVM detects fault type accurately using 3 milliseconds of post-fault data and reduces the fault clearing time which improves the system stability and power transfer capability. The performance of relaying scheme has been checked with a typical 765kV Indian transmission System which is simulated using the Electromagnetic Transients Program(EMTP) developed by authors in which the distributed parameter line model is used. More than 15,000 different short circuit fault cases are simulated by varying fault location, fault impedance, fault incidence angle and fault type to train the SVM for high speed accurate relaying. Simulation studies have shown that the proposed relay provides fast and accurate protection irrespective of fault location, fault impedance, incidence time of fault and fault type. And also the proposed scheme can be used as augmentation for the existing relaying, particularly for Zone-2, Zone-3 protection.

Performance limits of transition metal dichalcogenide (MX2) nanotube surround gate ballistic field effect transistors

We theoretically analyze the performance of transition metal dichalcogenide (MX2) single wall nanotube (SWNT) surround gate MOSFET, in the 10 nm technology node. We consider semiconducting armchair (n, n) SWNT of MoS2, MoSe2, WS2, and WSe2 for our study. The material properties of the nanotubes are evaluated from the density functional theory, and the ballistic device characteristics are obtained by self-consistently solving the Poisson-Schrodinger equation under the non-equilibrium Green's function formalism. Simulated ON currents are in the range of 61-76 mu A for 4.5 nm diameter MX2 tubes, with peak transconductance similar to 175-218 mu S and ON/OFF ratio similar to 0.6 x 10(5)-0.8 x 10(5). The subthreshold slope is similar to 62.22 mV/decade and a nominal drain induced barrier lowering of similar to 12-15 mV/V is observed for the devices. The tungsten dichalcogenide nanotubes offer superior device output characteristics compared to the molybdenum dichalcogenide nanotubes, with WSe2 showing the best performance. Studying SWNT diameters of 2.5-5 nm, it is found that increase in diameter provides smaller carrier effective mass and 4%-6% higher ON currents. Using mean free path calculation to project the quasi-ballistic currents, 62%-75% reduction from ballistic values in drain current in long channel lengths of 100, 200 nm is observed.

Performance and reliability of Gd2O3 and stacked Gd2O3-Eu2O3 metal-insulator-metal capacitors

Gd2O3-based metal-insulator-metal capacitors have been characterized with single layer (Gd2O3) and bilayer (Gd2O3/Eu2O3 and Eu2O3/Gd2O3) stacks for analog and DRAM applications. Although single layer Gd2O3 capacitors provide highest capacitance density (15 fF/mu m(2)), they suffer from high leakage current density, poor capacitance density-voltage linearity, and reliability. The stacked dielectrics help to reduce leakage current density (1.2x10(-5) A/cm(2) and 2.7 x 10(-5) A/cm(2) for Gd2O3/Eu2O3 and Eu2O3/Gd2O3, respectively, at -1 V), improve quadratic voltage coefficient of capacitance (331 ppm/V-2 and 374 ppm/V-2 for Gd2O3/Eu2O3 and Eu2O3/Gd2O3, respectively, at 1 MHz), and improve reliability, with a marginal reduction in capacitance density. This is attributed to lower trap heights as determined from Poole-Frenkel conduction mechanism, and lower defect density as determined from electrode polarization model.

Structural, electrical and dielectric properties of sputtered TiO2 films for Al/TiO2/Si capacitors

Metal-oxide semiconductor capacitors based on titanium dioxide (TiO2) gate dielectrics were prepared by RF magnetron sputtering technique. The deposited films were post-annealed at temperatures in the range 773-1173 K in air for 1 hour. The effect of annealing temperature on the structural properties of TiO2 films was investigated by X-ray diffraction and Raman spectroscopy, the surface morphology was studied by atomic force microscopy (AFM) and the electrical properties of Al/TiO2/p-Si structure were measured recording capacitance-voltage and current-voltage characteristics. The as-deposited films and the films annealed at temperatures lower than 773 K formed in the anatase phase, while those annealed at temperatures higher than 973 K were made of mixtures of the rutile and anatase phases. FTIR analysis revealed that, in the case of films annealed at 1173 K, an interfacial layer had formed, thereby reducing the dielectric constant. The dielectric constant of the as-deposited films was 14 and increased from 25 to 50 with increases in the annealing temperature from 773 to 973 K. The leakage current density of as-deposited films was 1.7 x 10(-5) and decreased from 4.7 X 10(-6) to 3.5 x 10(-9) A/cm(2) with increases in the annealing temperature from 773 to 1173 K. The electrical conduction in the Al/TiO2/p-Si structures was studied on the basis of the plots of Schottky emission, Poole-Frenkel emission and Fowler-Nordheim tunnelling. The effect of structural changes on the current-voltage and capacitance-voltage characteristics of Al/TiO2/p-Si capacitors was also discussed.