Current dependence of the energy gap in superconductors : a direct measurement

From the tunneling characteristics of a tin-tin oxide-lead junction, a direct measurement has been made of the energy-gap variation for a superconductor carrying a current in a compensated geometry. Throughout the region investigated – several temperatures near T_c and down to a reduced temperature t = 0.8 –the observed current dependence agrees quite well with predictions based on the Ginzburg-Landau-Gor’kov theory. Near T_c the predicted temperature dependence is also well verified, though deviations are observed at lower temperatures; even for the latter, the data are internally consistent with the temperature dependence of the experimental critical current. At the lowest temperature investigated, t = 0.8, a small “Josephson” tunneling current allowed further a direct measurement of the electron drift velocity at low current densities. From this, a preliminary experimental value of the critical velocity, believed to be the first reported, can be inferred in the basis of Ginzburg-Landau theory. For tin at t = 0.8, we find v_c = 87 m/sec. This value does not appear fully consistent with those predicted by recent theories for superconductors with short electronic mean-free-paths.

Photoelectrochemistry of GaAs and Si liquid junctions

A quantitative study has been performed on the stability of GaAs surfaces in a 0.10 M K₂Se-0.01 M K₂Se₂ aqueous solution. In this electrolyte, n-type GaAs electrodes displayed significant photocorrosion in competition with faradaic charge transfer to Se^2-. Chemisorption of group VIIIB metal ions onto the GaAs surfaces yielded improved current-voltage behavior of the GaAs photoanodes, and also resulted in a significant reduction in photocorrosion. This behavior implies that the chemisorbed metal ions act to increase the rate of hole transfer to the Se^2- species. Related experiments on n-GaAs, pGaAs, and Sn-doped In₂O₃ electrodes in Te^2-/- aqueous solutions have also been performed.

The majority carrier (electrons) transfer rate constant at a highly doped n⁺-Si/Co(Cp)₂Cl-methanol junction has been measured directly using the chronoamperometry electrochemical technique. The reduction reaction rate of Co(Cp)₂+ was 0.03 cm-s^-1 at the Si electrode, and was more than 100 times slower than at a hanging mercury electrode. The slower rate was attributed to the smaller optical and static dielectric constants, and the lower density of electrons of the semiconductor. The experimental results were compared to the Marcus theory of charge transfer.

The unique properties of high purity Si/liquid junctions have been investigated under illumination conditions in which the photogenerated carrier concentration exceeds the dopant concentration. Under these high injection conditions, negligible electric fields exist at the semiconductor/liquid interface, and carrier motion is driven by diffusion. Studies of the current-voltage properties of the Si in methanol solutions containing various redox couples suggested that high efficiency photoelectrochemical cells could be established through selective collection of carriers at the semiconductor/liquid junction. The quasi-Fermi levels of electrons and holes were measured directly against the solution potential. Steady-state and transient photovoltage measurements, and theoretical modeliug of the carrier transport, generation, and recombination dynamics indicated that the quasi-Fermi levels were flat across the semiconductor sample. The recombination velocities at the Si/liquid junctions have also been measured, and were shown to vary with the solution potential following the Shockley-Read-Hall theory on recombination.

Heteroepitaxy of Group IV and Group III-V semiconductor alloys for photovoltaic applications

Photovoltaic energy conversion represents a economically viable technology for realizing collection of the largest energy resource known to the Earth -- the sun. Energy conversion efficiency is the most leveraging factor in the price of energy derived from this process. This thesis focuses on two routes for high efficiency, low cost devices: first, to use Group IV semiconductor alloy wire array bottom cells and epitaxially grown Group III-V compound semiconductor alloy top cells in a tandem configuration, and second, GaP growth on planar Si for heterojunction and tandem cell applications.

Metal catalyzed vapor-liquid-solid grown microwire arrays are an intriguing alternative for wafer-free Si and SiGe materials which can be removed as flexible membranes. Selected area Cu-catalyzed vapor-liquid solid growth of SiGe microwires is achieved using chlorosilane and chlorogermane precursors. The composition can be tuned up to 12% Ge with a simultaneous decrease in the growth rate from 7 to 1 μm/min^-1. Significant changes to the morphology were observed, including tapering and faceting on the sidewalls and along the lengths of the wires. Characterization of axial and radial cross sections with transmission electron microscopy revealed no evidence of defects at facet corners and edges, and the tapering is shown to be due to in-situ removal of catalyst material during growth. X-ray diffraction and transmission electron microscopy reveal a Ge-rich crystal at the tip of the wires, strongly suggesting that the Ge incorporation is limited by the crystallization rate.

Tandem Ga_1-xIn_xP/Si microwire array solar cells are a route towards a high efficiency, low cost, flexible, wafer-free solar technology. Realizing tandem Group III-V compound semiconductor/Si wire array devices requires optimization of materials growth and device performance. GaP and Ga_1-xIn_xP layers were grown heteroepitaxially with metalorganic chemical vapor deposition on Si microwire array substrates. The layer morphology and crystalline quality have been studied with scanning electron microscopy and transmission electron microscopy, and they provide a baseline for the growth and characterization of a full device stack. Ultimately, the complexity of the substrates and the prevalence of defects resulted in material without detectable photoluminescence, unsuitable for optoelectronic applications.

Coupled full-field optical and device physics simulations of a Ga_0.51In_0.49P/Si wire array tandem are used to predict device performance. A 500 nm thick, highly doped "buffer" layer between the bottom cell and tunnel junction is assumed to harbor a high density of lattice mismatch and heteroepitaxial defects. Under simulated AM1.5G illumination, the device structure explored in this work has a simulated efficiency of 23.84% with realistic top cell SRH lifetimes and surface recombination velocities. The relative insensitivity to surface recombination is likely due to optical generation further away from the free surfaces and interfaces of the device structure.

Finally, GaP has been grown free of antiphase domains on Si (112) oriented substrates using metalorganic chemical vapor deposition. Low temperature pulsed nucleation is followed by high temperature continuous growth, yielding smooth, specular thin films. Atomic force microscopy topography mapping showed very smooth surfaces (4-6 Å RMS roughness) with small depressions in the surface. Thin films (~ 50 nm) were pseudomorphic, as confirmed by high resolution x-ray diffraction reciprocal space mapping, and 200 nm thick films showed full relaxation. Transmission electron microscopy showed no evidence of antiphase domain formation, but there is a population of microtwin and stacking fault defects.

Spontaneous and stimulated light emission due to radiative recombination in forward biased lead telluride P-N junctions

Since the discovery in 1962 of laser action in semiconductor diodes made from GaAs, the study of spontaneous and stimulated light emission from semiconductors has become an exciting new field of semiconductor physics and quantum electronics combined. Included in the limited number of direct-gap semiconductor materials suitable for laser action are the members of the lead salt family, i.e . PbS, PbSe and PbTe. The material used for the experiments described herein is PbTe . The semiconductor PbTe is a narrow band- gap material (E_g = 0.19 electron volt at a temperature of 4.2°K). Therefore, the radiative recombination of electron-hole pairs between the conduction and valence bands produces photons whose wavelength is in the infrared (λ ≈ 6.5 microns in air).

The p-n junction diode is a convenient device in which the spontaneous and stimulated emission of light can be achieved via current flow in the forward-bias direction. Consequently, the experimental devices consist of a group of PbTe p-n junction diodes made from p –type single crystal bulk material. The p - n junctions were formed by an n-type vapor- phase diffusion perpendicular to the (100) plane, with a junction depth of approximately 75 microns. Opposite ends of the diode structure were cleaved to give parallel reflectors, thereby forming the Fabry-Perot cavity needed for a laser oscillator. Since the emission of light originates from the recombination of injected current carriers, the nature of the radiation depends on the injection mechanism.

The total intensity of the light emitted from the PbTe diodes was observed over a current range of three to four orders of magnitude. At the low current levels, the light intensity data were correlated with data obtained on the electrical characteristics of the diodes. In the low current region (region A), the light intensity, current-voltage and capacitance-voltage data are consistent with the model for photon-assisted tunneling. As the current is increased, the light intensity data indicate the occurrence of a change in the current injection mechanism from photon-assisted tunneling (region A) to thermionic emission (region B). With the further increase of the injection level, the photon-field due to light emission in the diode builds up to the point where stimulated emission (oscillation) occurs. The threshold current at which oscillation begins marks the beginning of a region (region C) where the total light intensity increases very rapidly with the increase in current. This rapid increase in intensity is accompanied by an increase in the number of narrow-band oscillating modes. As the photon density in the cavity continues to increase with the injection level, the intensity gradually enters a region of linear dependence on current (region D), i.e. a region of constant (differential) quantum efficiency.

Data obtained from measurements of the stimulated-mode light-intensity profile and the far-field diffraction pattern (both in the direction perpendicular to the junction-plane) indicate that the active region of high gain (i.e. the region where a population inversion exists) extends to approximately a diffusion length on both sides of the junction. The data also indicate that the confinement of the oscillating modes within the diode cavity is due to a variation in the real part of the dielectric constant, caused by the gain in the medium. A value of τ ≈ 10^-9 second for the minority- carrier recombination lifetime (at a diode temperature of 20.4°K) is obtained from the above measurements. This value for τ is consistent with other data obtained independently for PbTe crystals.

Data on the threshold current for stimulated emission (for a diode temperature of 20. 4°K) as a function of the reciprocal cavity length were obtained. These data yield a value of J’_th = (400 ± 80) amp/cm² for the threshold current in the limit of an infinitely long diode-cavity. A value of α = (30 ± 15) cm^-1 is obtained for the total (bulk) cavity loss constant, in general agreement with independent measurements of free- carrier absorption in PbTe. In addition, the data provide a value of n_s ≈ 10% for the internal spontaneous quantum efficiency. The above value for n_s yields values of t_b ≈ τ ≈ 10^-9 second and t_s ≈ 10^-8 second for the nonradiative and the spontaneous (radiative) lifetimes, respectively.

The external quantum efficiency (n_d) for stimulated emission from diode J-2 (at 20.4° K) was calculated by using the total light intensity vs. diode current data, plus accepted values for the material parameters of the mercury- doped germanium detector used for the measurements. The resulting value is n_d ≈ 10%-20% for emission from both ends of the cavity. The corresponding radiative power output (at λ = 6.5 micron) is 120-240 milliwatts for a diode current of 6 amps.

A ipseidade na ética argumentativa de Paul Ricoeur

A ipseidade na ética argumentativa de Paul Ricoeur é a referência básica da hermenêutica do si ao qual sempre retorna. Ela estabelece a constante mediação reflexiva em oposição à pretensa posição imediata do sujeito. A mesmidade do si tem como contrapartida o outro. Na comparação, a mesmidade é sinônimo de identidade-idem em oposição à ipseidade-ipse que inclui a alteridade. Esta inclusão questiona a capacidade do si construtivo da ética e, portanto, responsável jurídica e moralmente nas várias injunções do outro. O projeto ético de Ricoeur é compreensível a partir e dentro de sua peculiar metodologia que ele denomina de dialética entre a ética teleológica e a moral deontológica. Esta dialética se fundamenta na tríade do desejo, do dever e da sabedoria prática em recíproca atividade, privilegiando a dimensão teleológica do desejo da vida boa com o outro e para o outro em instituições justas. A ética argumentativa tem a função de dar conteúdo as duas dialéticas pela inclusão do outro no si mesmo sem o qual a reflexão sobre a ipseidade perderia o sentido. A sabedoria prática da ética e do julgamento moral em situação inclui a discussão porque o conflito é insuperável e determina o argumento para o consenso eventual. Nossa tese é a afirmação da capacidade do si mesmo atuar ações construtivas. Além da critica à ideologia e à utopia, Ricoeur fundamenta a dialética entre o princípio-esperança e o princípio de responsabilidade mediante a via utópica do futuro e a via realista da preocupação com o presente diante dos casos inéditos em que a vida e o ecossistema se associam. A imputação pessoal e coletiva desde o passado, no presente para o futuro é devida à responsabilidade. A ipseidade constrói o futuro no presente através de decisões éticas.

Instabilities in a grating feedback external cavity semiconductor laser

Output power fluctuations in a grating external cavity diode laser with Littman configuration are described, showing peculiar chaotic behaviors of self-pulsation at the L-I curve kink points. Different spectral characteristics with multiple peaks are observed at upper and lower state of the self-pulsation. It is found also that P-N junction voltage jumps in a same pace with the pulsation. The observed phenomena reflect competition between different longitudinal modes, and transient variation of transverse modes in addition. These experimental results may contain information about the mechanisms of the chaotic instability in strong filtered feedback semiconductor lasers. (C) 2008 Optical Society of America

Experimental studies of weak superconductivity

Experimental investigations were made of the nature of weak superconductivity in a structure having well-defined, controllable characteristics and geometry. Controlled experiments were made possible by using a thin-film structure which was entirely metallic and consisted of a superconducting film with a localized section that was weak in the sense that its transition temperature was depressed relative to the rest of the film. The depression of transition temperature was brought about by underlaying the superconductor with a normal metal.

The DC and AC electrical characteristics of this structure were studied. It was found that this structure exhibited a non-zero, time-average supercurrent at finite voltage to at least .2 mV, and generated an oscillating electric potential at a frequency given by the Josephson relation. The DC V-I characteristic and the amplitude of the AC oscillation were found to be consistent with a two- fluid (normal current-supercurrent) model of weak super-conductivity based on e thermodynamically irreversible process of repetitive phase-slip, and featuring a periodic time dependence in the amplitude of the superconducting order parameter.

The observed linewidth of the AC oscillation could be accounted for by incorporating Johnson noise in the two-fluid model.

Experimentally it was found that the behavior of a short (length on the order of the coherence distance) weak superconductor could be characterized by its critical current and normal-state resistance, and an empirical expression was obtained for the time dependence of the super-current and voltage.

It was found that the results could not be explained on the basis of the theory of the Josephson junction.

Estimating the underwater shape of tuna longlines with micro-bathythermographs

An estimation method for the three-dimensional underwater shape of tuna longlines is developed, using measurements of depth obtained from micro-bathythermographs (BTs) attached to the main line at equally spaced intervals. The shape of the main line is approximated by a model which consists of a chain of unit length lines (folding-rule model), where the junction points are placed at the observed depths. Among the infinite number of possible shapes, the most likely shape is considered to be the smoothest one that can be obtained with a numerical optimization algorithm. To validate the method, a series of experimental longline operations were conducted in the equatorial region of the eastern Pacific Ocean, using 13 or 14 micro-BTs per basket of main line. Concurrent observations of oceanographic conditions (currents and temperature structure) were obtained. The shape of the main line can be calculated at arbitrary times during operations. Shapes were consistent with the current structure. On the equator, the line was elevated significantly by the Equatorial Undercurrent. It is shown that the shape of main line depends primarily upon the vertical shear and direction of the current relative to the gear. Time sequences of calculated shapes reveals that observed periodic (1-2 hours) oscillations in depth of the gear was caused by swinging movements of the main line. The shortening rate of the main line is an important parameter for formulating the shape of the longline, and its precise measurement is desirable.

Inpedantzia altuko babes diferentziala.

[EU]Inpedantzia altuko babes sistema teknika sinplea da non korronte transformadoreak behar dituen babes eskema osatzeko. Korronte transformadore hauek ukondoko tentsio altua, magnetizazio ezaugarri antzekoak eta transformazio erlazio berdina izan behar dute. KT guztiak babestutako objektuaren amaieran jarri behar dira. Fase bakoitzari dagozkion KT guztiak paraleloan konektatu behar dira eta KT guztien juntura puntuan neurri adarra jarri behar da.

Photonic nanowires directly drawn from bulk glasses

High-uniform nanowires with diameters down to 50 nm are directly taper-drawn from bulk glasses. Typical loss of these wires goes down to 0.1 dB/mm for single-mode operation. Favorable photonic properties such as high index for tight optical confinement in tellurite glass nanowires and photoluminescence for active devices in doped fluoride and phosphate glass nanowires are observed. Supporting high-index tellurite nanowires with solid substrates (such as silica glass and MgF2 crystal) and assembling low-loss microcoupler with these wires are also demonstrated. Photonic nanowires demonstrated in this work may open up vast opportunities for making versatile building blocks for future micro- and nanoscale photonic circuits and components. (c) 2006 Optical Society of America.

Um problema de interferências quânticas: segregação de impurezas em sistemas metálicos nanoestruturados

Neste trabalho estudamos o problema da segregação de impurezas substitucionais em sistemas nanoestruturados metálicos formados pela justaposição de camadas (multicamadas). Utilizamos o modelo de ligações fortes (tight-binding) com um orbital por sítio para calcular a estrutura eletrônica desses sistemas, considerando a rede cristalina cubica simples em duas direções de crescimento: (001) e (011). Devido à perda de simetria do sistema, escrevemos o hamiltoniano em termos de um vetor de onda k, paralelo ao plano, e um ındice l que denota um plano arbitrario do sistema. Primeiramente, calculamos a estrutura eletrônica do sistema considerando-o formado por átomos do tipo A e, posteriormente, investigamos as modificações nessa estrutura eletrônica ao introduzirmos uma impureza do tipo B em um plano arbitrário do sistema. Calculamos o potencial introduzido por esta impureza levando-se em conta a neutralidade de carga através da regra de soma de Friedel. Calculamos a variação da energia eletrônica total ΔEl como função da posição da impureza. Como substrato, consideramos sistemas com ocupações iguais a 0.94 e 0.54 elétrons por banda, o que dentro do modelo nos permite chamá-los de Nie Cr. As impurezas sao tambem metais de transição - Mn, Fee Co. Em todos os casos investigados, foi verificado que a variação de energia eletrônica total apresenta um comportamento oscilatorio em função da posição da impureza no sistema, desde o plano superficial, até vários planos interiores do sistema. Como resultado, verificamos a ocorrencia de planos mais favoráveis à localização da impureza. Ao considerarmos um número relativamente grande de planos, um caso em particular foi destacado pelo aparecimento de um batimentono comportamento oscilatório de ΔEl. Estudamos também o comportamento da variação da energia total, quando camadas (filmes) são crescidas sobre o substrato e uma impureza do mesmo tipo das camadas é colocada no substrato. Levamos em conta a diferença de tamanho entre os átomos do substrato e os átomos dos filmes. Analisamos ainda a influência da temperatura sobre o comportamento oscilatório da energia total, considerando a expansão de Sommerfeld.

Genotypes, Recombinant Forms, and Variants of Norovirus GII.4 in Gipuzkoa (Basque Country, Spain), 2009-2012

Background: Noroviruses (NoVs) are genetically diverse, with genogroup II-and within it-genotype 4 (GII.4) being the most prevalent cause of acute gastroenteritis worldwide. The aim of this study was to characterize genogroup II NoV causing acute gastroenteritis in the Basque Country (northern Spain) from 2009-2012. Methods: The presence of NoV RNA was investigated by reverse transcriptase-polymerase chain reaction (RT-PCR) in stool specimens from children younger than 15 years old with community-acquired acute gastroenteritis, and from hospitalized adults or elderly residents of nursing homes with acute gastroenteritis. For genotyping, the open reading frames ORF1 (encoding the polymerase) and ORF2 (encoding the major capsid protein) were partially amplified and sequenced. Recombinant strains were confirmed by PCR of the ORF1/ORF2 junction region. Results: NoV was detected in 16.0% (453/2826) of acute gastroenteritis episodes in children younger than 2 years, 9.9% (139/1407) in children from 2 to 14 years, and 35.8% (122/341) in adults. Of 317 NoVs characterized, 313 were genogroup II and four were genogroup I. The GII.4 variants Den Haag-2006b and New Orleans-2009 predominated in 2009 and 2010-2011, respectively. In 2012, the New Orleans-2009 variant was partially replaced by the Sydney-2012 variant (GII.Pe/GII.4) and New Orleans-2009/Sydney-2012 recombinant strains. The predominant capsid genotype in all age groups was GII.4, which was the only genotype detected in outbreaks. The second most frequent genotype was GII.3 (including the recently described recombination GII.P16/GII.3), which was detected almost exclusively in children. Conclusion: Nine different genotypes of NoV genogroup II were detected; among these, intergenotype recombinant strains represented an important part, highlighting the role of recombination in the evolution of NoVs. Detection of new NoV strains, not only GII.4 strains, shortly after their first detection in other parts of the world shows that many NoV strains can spread rapidly.

Foto-assemblage

FOTO-ASSEMBLAGE consiste em nomenclatura sugestionada para definir os trabalhos que tenho produzido a partir da junção de fotografias digitais. As elaborações e fundamentações desses trabalhos representam também o cerne das pesquisas que resultaram na presente dissertação. Em princípio, o termo foto-assemblage haveria de referir-se a questões técnicas ou formais dessa prática. Contudo, ao desenvolver as pesquisas alguns procedimentos acabaram por determinar certas nuances que revelaram aspectos comuns também em seus e conteúdos. Como resultado de construções artísticas juntando fotografias desde 2009, cheguei às composições sintéticas aqui apresentadas, construídas a partir de duas fotografias. Aventei o nome foto-assemblage por observar nas imagens resultantes ressalvas que as distinguiriam de certas convenções atribuídas à ideia de fotografia. Ao mesmo tempo, as referidas imagens proporiam um possível desdobramento ao entendimento de assemblage enquanto técnica artística. Ainda que não seja uma regra, fotografias revelam imagens de momentos. Em sua relação com a compreensão humana de tempo ou espaço, fotografias quase sempre contêm instâncias mínimas. Fotografias, contudo, podem ser também compreendidas como uma contração de um percurso de tempo. Toda imagem fotográfica pode ser assimilada como resultante de determinados acontecimentos anteriores e mesmo tida como elemento gerador de conseqüências futuras. Seguindo esse entendimento, o que proponho com a foto-assemblage é que essa lide com segmentos de tempo ou de espaço contidos numa mesma imagem. Essas fotografias originárias ganhariam uma nova atribuição, sendo retiradas de seu contexto original, serviriam de balizas do percurso de tempo ou espaço suprimido e subjetivado entre elas. Poeticamente, eventos ocorridos entre as fotografias originárias estariam contidos nas imagens produzidas. O termo assemblage foi incorporado às artes a partir de 1953, por Jean Dubuffet, para descrever trabalhos que seriam algo mais do que simples colagem. A ideia de assemblage se baseia no princípio de que todo e qualquer material ou objeto colhido de nosso mundo cotidiano pode ser incorporado a uma obra de arte, criando um novo conjunto, sem que perca seu sentido original. Esse objeto é arrancado de seu uso habitual e inserido num novo contexto, tecendo laços de relação com os demais elementos, construindo narrativas num novo ambiente, o da obra. Na ideia da foto-assemblage, entretanto, é sugerido uso das imagens fotográficas originárias não como objetos que estariam em um mundo cotidiano, mas sim como imagem na concepção do que seria uma entidade mental. Adoto como que uma visão mágica onde as imagens originárias e básicas estariam numa outra dimensão, num plano bidimensional, não manipulável por nós habitantes da tridimensionalidade. Nesse ambiente imaginário ou não, as fotografias são assentadas consolidando a foto-assemblage. Quando a foto-assemblage se concretiza, se corporifica numa mídia, sendo impressa para uma contemplação, ai então, passaria a integrar nosso mundo tridimensional. O resultado poderia ser admitido como um híbrido, uma terceira coisa, a partir de duas que já não se dissociam mais no ensejo de uma compreensão estética. Ao final da dissertação, apresento experiências práticas que resultaram em quatro séries de imagens em foto-assemblage. Cada série enfatiza aspectos peculiares do que denomino paisagem expandida, representando percursos de tempo, espaço ou trajetos entre o mundo concreto e mundos do inconsciente.

Efeitos do tratamento periodontal não cirúrgico sobre a densidade e altura óssea alveolar

O objetivo deste trabalho foi avaliar o efeito do tratamento periodontal não cirúrgico (TPNC), na densidade e na altura óssea alveolar, em pacientes com periodontite, utilizando radiografias digitais diretas. Cento e um sítios, em dezenove pacientes (idade média 36 7.3 anos) foram acompanhados no dia 0, e 90 e 180 dias após TPNC. Os índices clínicos de profundidade de bolsa a sondagem (PBS), nível de inserção clínica, sangramento à sondagem e índice de placa foram registrados e radiografias digitais foram feitas. A densidade foi analisada através de regiões ósseas de interesse colocadas sobre a crista óssea alveolar (ROI I) e sobre o osso medular (ROI II). A altura óssea alveolar foi medida através da distância da crista óssea alveolar até a junção cemento esmalte. Os sítios profundos (PBS ≥ 5mm) apresentaram uma melhora clínica significante (p <0.01), acompanhada de um aumento na densidade da ROI I (p <0.01). A ROI II mostrou um aumento na densidade dos sítios com PBS ≤ 3mm em pacientes com periodontite agressiva (p <0.05). No entanto, houve diminuição nos sítios com PBS ≥ 5mm nesses mesmos pacientes (p <0.03). A altura óssea alveolar não sofreu alteração após TPNC. Após o tratamento periodontal não cirúrgico, observou-se que as radiografias obtidas através da técnica digital direta parecem mostrar um aumento na densidade da crista óssea, nos sítios profundos dos pacientes com periodontite. No entanto, a redução da profundidade de bolsa e do ganho no nível de inserção clínica não foi acompanhada por alterações significantes na altura óssea alveolar nestes sítios.

Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates

The nonpolar m-plane (1 (1) over bar 00) thin film GaN and InGaN/GaN light-emitting diodes (LEDs) grown by metal-organic chemical vapor deposition on LiAlO2 (100) substrates are reported. The LEDs emit green light with output power of 80 mu W under a direct current of 20 mA for a 400x400 mu m(2) device. The current versus voltage (I-V) characteristic of the diode shows soft rectifying properties caused by defects and impurities in the p-n junction. The electroluminescence peak wavelength dependence on injection current, for currents in excess of 20 mA, saturates at 515-516 nm. This proves the absence of polarization fields in the active region present in c-plane structures. The light output intensity versus current (L-I) characteristic of the diode exhibits a superlinear relation at low injection current caused by nonradiative centers providing a shunt path and a linear light emission zone at high current level when these centers are saturated. (c) 2007 American Institute of Physics.