970 resultados para SOL-GEL SYNTHESIS


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Hybrid ZnO/ormosils Elms are prepared by the sol-gel method. A FT-IR spectrometer, 900 UV/VIS/NIR spectrophotometer, atomic force microscope, and ellipsometer are employed to investigate microstructure and optical properties of the films fired at different temperatures. The results show that the films with high transmittance and low surface roughness could be obtained at the heat-treatment temperature of 150 degrees C, the refractive index and thickness of the film are 1.413, 2.11 mu m, respectively. Higher temperatures (350 degrees C, 550 degrees C) change the Elm microstructure severely, and then decrease the transmittance of the films.

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abstract = {TiO2/ormosil planar waveguide was prepared by sol-gel method at low thermal treatment temperature ( less than or equal 200°C). Scanning electron microscope, FT-IR spectrometer, spectrophotometer, atomic force microscopy, thermal analyzer, and dark m-line spectroscopy were used with the method of scattering-detection to investigate optical and structural properties. High optical quality waveguide film was obtained. The propagation loss of film was 0.569 dB/cm at a wavelength of 632.8 nm.

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Transparent and homogeneous aluminophosphate gels and glasses have been widely synthesized through an aqueous sol-gel route, extending significantly the glass-forming range compared to that accessible via the melt-cooling route. Different phosphorus precursors, sodium polyphosphate (NaPO3) and orthophosphate species (NaH2PO4 and/or H3PO4) were compared with regard to the macroscopic properties and the microscopic structure of the resultant gels and glasses as characterized by extensive high-resolution liquid- and solid-state NMR. Sodium polyphosphate solution results in a substantially wider composition range of homogenous gel formation than orthophosphate solutions, and the two routes produce significant structural differences in the sol and xerogel states. Nevertheless, the structures of the glasses obtained upon gel annealing above 400 degrees C are independent of the P-precursors used. (c) 2007 Elsevier B.V. All rights reserved.

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A series of binary borosilicate glasses prepared by the sol-gel method are shown to be bioactive. Tetraethyl orthosilicate (TEOS) and trimethylborate (TMB) in acidic medium are used to prepare xB(2)O(3)center dot(1-x)SiO2 glass systems for x = 0.045-0.167. The formation of a layer of apatite-like mineral on the glass surface becomes apparent after soaking in simulated body fluid for 48 h. We have measured the B-11-B-11 homonuclear second moments of the borosilicate glasses and inferred that no macroscopic phase separation occurred in our glasses. The B-11 chemical shift data also show that the formation of clustered boroxol rings is negligible in our glass system. Although the bioactivity of our borosilicate glasses is less than that of CaO-SiO2 sol-gel glasses, these simple binary systems could be taken as reference glass systems for the search of new bioactive borosilicate glasses. (C) 2008 Elsevier Ltd. All rights reserved.

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用溶胶-凝胶(Sol-gel)技术以及柠檬酸自燃方法制备了NiMn2.0-xFexO4(x=0、0.1、0.15、0.2、0.3)纳米氧化物粉体,并将得到的超细粉体进行压片、烧结、封装等工艺制得热敏电阻。用XRD、SEM、电阻测量等手段表征了烧结体材料的晶相、微观形貌以及电阻性能。电阻测量结果表明:随着铁离子的增加,所得热敏电阻的阻值增大。在所有获得的材料中,其灵敏度B值大于4300K,可认为是一种具有实际应用价值的负系数热敏电阻。

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由溶胶一凝胶/燃烧合成结合法合成了Nd:YAG(掺钕钇铝石榴石,neodymium—doped yttrium aluminium garnet)粉体,用真空烧结法制备了Nd:YAG透明陶瓷。研究了显微结构随烧结温度和保温时间的变化,并对透明陶瓷的晶界结构和成分分布进行了表征。随着烧结温度的提高和保温时间的延长,Nd:YAG陶瓷的密度增大,晶形发育完整,透过率提高。晶粒内部和晶界的化学组成基本相同。所制备的Nd:YAG透明陶瓷在激光工作波长1064nm的透过率达到75%。

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采用溶胶-凝胶法制备了不同组分(x=0.1—0.3)的MgxZn1-xO前驱体,并对它进行不同温度的热处理(550℃-1000℃)。X射线衍射(XRD)结果表明,Mg0.1Zn0.9O具有和ZnO一样的衍射谱,为六方纤锌矿结构,而且随着热处理温度的升高,ZnO衍射峰的强度逐渐增强,半高宽不断减小;Mg元素掺杂浓度增大后,出现了MgO的峰位。扫描电子显微镜(SEM)显示Mg0.1Zn0.9O晶粒粒径分布较均匀;热处理温度升高,晶粒的尺寸不断变大。用室温荧光光谱(PL)分析了经过550—1000℃热处理获得的

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本文采用两步湿化学法在玻璃衬底上制备了ZnO纳米线.首先,利用Sol-gel方法在载玻片上制备含有ZnO纳米颗粒的薄膜作为“种子”衬底.然后,利用水热法在“种子”衬底上生长了高度取向的ZnO纳米线.并对“种子”衬底和随后生长的ZnO纳米线进行了X射线衍射(XRD)、扫描电子形貌图(SEM)和原子力显微镜(AFM)等分析.结果表明“种子”衬底为大范围内纳米颗粒均匀一致的ZnO 薄膜.通过水热法制备的ZnO纳米线的直径在50~80nm,平均直径为60nm,长度大约为2μm.该ZnO纳米线除了具有很强的紫外发光

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采用溶胶凝胶法在LiAlO2(302)衬底上制备了ZnO薄膜。用X射线衍射(XRD)和扫描电镜(SEM)对样品的结构和形貌进行了表征。XRD结果表明,随着热处理温度的升高(350℃、450℃、550℃、600℃、800℃),所得到的薄膜分别为单相ZnAl2O4(350℃),ZnAl2O4和ZnO的混合相(450℃)以及单相的ZnO(550℃、600℃、800℃),并且ZnO薄膜C轴择优取向的生长趋势随温度升高相应明显。SEM图像显示,随着热处理温度的升高,ZnO薄膜的粒径相应变大。

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ZrO2 thin films were deposited bill using an electron beam evaporation technique on three kinds of lithium triborate (LiB3O5 or LBO) substrates with the surfaces at specified crystalline orientations. The influences of the LBO structure on the structural and optical properties of ZrO2 thin films are studied by spectrophotometer and x-ray diffraction. The results indicate that the substrate structure has obvious effects on the structural end optical properties of the film: namely. the ZrO2 thin film deposited on the X-LBO, Y-LBO and Z-LBO orients to m(-212), m(021) and o(130) directions. It is also found that the ZrO2 thin film with m(021) has the highest refractive index and the least lattice misfit.

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Sóis liofilizados precursores de Al2O3/TiO2, foram preparados via tecnologia sol-gel, com diferentes porcentagens de óxido de titânio (5%, 10%, 15% e 20%, em massa). Os sóis liofilizados foram caracterizados por meio de diversas análises, com o intuito de obter informações sobre o comportamento térmico, fases presentes, tamanho de partícula, composição e uniformidade das amostras. Os resultados obtidos indicam que os sóis apresentam as fases boemita e anatase, com partículas de tamanho nanométrico, tem composições muito similares quando analisadas em pontos distintos, átomos bem dispersos e distribuídos. Após esta etapa, amostras de aço AISI 1020 foram recobertas com estes sóis através do método dip-coating, o comportamento corrosivo foi estudado por meio de ensaios eletroquímicos e a morfologia das camadas, analisadas por meio de microscopias. Observou-se que as camadas eram uniformes e recobriam por completo toda a superfície das amostras, os ensaios de polarização indicaram melhorias no potencial eletroquímico para amostras recobertas, em comparação com amostras de aço sem recobrimento. O monitoramento de circuito aberto apresentou bons ajustes, indicando bom comportamento da camada. Notou-se pelas microscopias a presença de pontos de corrosão em algumas amostras antes dos ensaios, suspeitando-se que os resultados obtidos teriam sido melhores, caso houvesse um maior controle do processo de recobrimento.

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The noble gas sensor using multiple ZnO nanorods was fabricated with CMOS compatible process and sol-gel growth method on selective area and gas response characteristics to NO2 gas of the sensor device were investigated. We confirmed the sensors had high sensitive response denoted by the sensitivity of several tens for NO2 gas sensing and also showed pretty low power consumption close to 20 mW even though the recovery of resistance come up to almost the initial value.

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Coherent coupling between a large number of qubits is the goal for scalable approaches to solid state quantum information processing. Prototype systems can be characterized by spectroscopic techniques. Here, we use pulsed-continuous wave microwave spectroscopy to study the behavior of electrons trapped at defects within the gate dielectric of a sol-gel-based high-k silicon MOSFET. Disorder leads to a wide distribution in trap properties, allowing more than 1000 traps to be individually addressed in a single transistor within the accessible frequency domain. Their dynamical behavior is explored by pulsing the microwave excitation over a range of times comparable to the phase coherence time and the lifetime of the electron in the trap. Trap occupancy is limited to a single electron, which can be manipulated by resonant microwave excitation and the resulting change in trap occupancy is detected by the change in the channel current of the transistor. The trap behavior is described by a classical damped driven simple harmonic oscillator model, with the phase coherence, lifetime and coupling strength parameters derived from a continuous wave (CW) measurement only. For pulse times shorter than the phase coherence time, the energy exchange between traps, due to the coupling, strongly modulates the observed drain current change. This effect could be exploited for 2-qubit gate operation. The very large number of resonances observed in this system would allow a complex multi-qubit quantum mechanical circuit to be realized by this mechanism using only a single transistor.