Low threshold voltage ZnO thin film transistor with a Zn0.7Mg0.3O gate dielectric for transparent electronics

A highly transparent all ZnO thin film transistor (ZnO-TFT) with a transmittance of above 80% in the visible part of the spectrum, was fabricated by direct current magnetron sputtering, with a bottom gate configuration. The ZnO-TFT with undoped ZnO channel layers deposited on 300 nm Zn0.7Mg0.3O gate dielectric layers attains an on/off ratio of 104 and mobility of 20 cm2/V s. The capacitance-voltage (C−V) characteristics of the ZnO-TFT exhibited a transition from depletion to accumulation with a small hysteresis indicating the presence of oxide traps. The trap density was also computed from the Levinson’s plot. The use of Zn0.7Mg0.3O as a dielectric layer adds additional dimension to its applications. The room temperature processing of the device depicts the possibility of the use of flexible substrates such as polymer substrates. The results provide the realization of transparent electronics for next-generation optoelectronics.

Studies on dielectric behavior of insulator‐conductor composites

This paper describes the dielectric behavior of an insulator‐conductor composite, namely, the wax‐graphite composite. The variation of specific capacitance of these composites with parameters such as volume fraction and grain size of the conducting particles and temperature has been studied. These observed variations have been explained using the same model [C. Rajagopal and M. Satyam, J. Appl. Phys. 49, 5536 (1978)] which explains electrical conduction in composites. The specific capacitance of these materials appears to be governed by the contact capacitance between the conducting particles and the number of contacts each particle has with its neighbors. The variation of specific capacitance with temperature is attributed to the change in contact area.

Ferroelectric interaction and polarization studies in BaTiO3/SrTiO3 superlattice

Ferroelectric superlattice structures consisting of alternating layers of BaTiO3 and SrTiO3 with variable interlayer thickness were grown on Pt (111)/TiO2/SiO2/Si (100) substrates by pulsed laser deposition. The presence of superlattice reflections in the x-ray diffraction pattern clearly showed the superlattice behavior of the fabricated structures over a range of 6.4–20 nm individual layer thicknesses. Depth profile conducted by secondary ion mass spectrometry analysis showed a periodic concentration of Ba and Sr throughout the film. Polarization hysteresis and the capacitance-voltage characteristics of these films show clear size dependent ferroelectric characteristics. The spontaneous (Ps) and remnant (Pr) polarizations increase gradually with decreasing periodicity, reach a maximum at a finite thickness and then decrease. The competition between the size effect and long-range ferroelectric interaction is suggested as a possible reason for this phenomenon. The temperature dependence of Ps and Pr shows a single ferroelectric phase transition, and the Curie temperature is estimated to be about 316 K. The curve shows that the ferroelectric superlattice tends to form an artificial material, responding as a single structure with an averaged behavior of both the parent systems.

Structural and electrical properties of low pressure metalorganic chemical vapor deposition grown Eu2O3 films on Si(100)

Structural and electrical properties of Eu2O3 films grown on Si(100) in 500–600 °C temperature range by low pressure metalorganic chemical vapor deposition are reported. As-grown films also possess the impurity Eu1−xO phase, which has been removed upon annealing in O2 ambient. Film’s morphology comprises uniform spherical mounds (40–60 nm). Electrical properties of the films, as examined by capacitance-voltage measurements, exhibit fixed oxide charges in the range of −1.5×1011 to −6.0×1010 cm−2 and dielectric constant in the range of 8–23. Annealing has resulted in drastic improvement of their electrical properties. Effect of oxygen nonstoichiometry on the film’s property is briefly discussed.

Design parameters for earth-wire power tapping

The paper deals with the calculation of the induced voltage on, and the equivalent capacitance of, an earth wire isolated for purposes of tapping small amounts of power from high-voltage lines. The influence of heights, diameters and spacings of conductors on these quantities have been studied and presented in the form of graphs.

Supercapacitor studies on globular polypyrrole microstructures developed by a facile electrochemical route

Micrometre-scale polypyrrole (PPy) structures are synthesised for electrochemical supercapacitor applications by a facile electrochemical route. Globular polypyrrole microstructures of size < 5 μm are grown on stainless steel (SS-304) substrate by electro-polymerisation of pyrrole on oxygen microbubble templates electrochemically generated and stabilised in the presence of surfactant/supporting electrolyte/ dopant b-naphthalene sulfonic acid (b-NSA). Microstructures obtained with scan range of 0??1.6 V (against Ag/AgCl) are uniformly distributed over the surface with high coverage density of 5 x 105 to 8 x 10 cm-2. Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy revealed that the formed microstructures are of Β-NSA doped PPy. Scanning electron microscopy showed the uniform spread and good coverage of microstructures over the substrate. Supercapacitor properties of PPy films are investigated by cyclic voltammetry, electrochemical impedance spectroscopy and galvanostatic charge/discharge methods with 1.0 M KCl as electrolyte in a three-electrode electrochemical cell. Specific capacitance of 583 Fg-1 is obtained, which is greater than the values (350-400 Fg-1 highest) usually reported for this material. Electrochemical impedance spectroscopy proves the superc

Aids in the design of microstrip components I: Getsinger's chart

Charts relating the capacitance to the width, spacing, thickness and height above the ground plane of coupled microstrips have been obtained. These are used to design hairpin line and hybrid hairpin line filters as well as multiplexers using microstrip comb line filters. The experimental results agree reasonably well with the design specifications. Getsinger's original charts for parallel coupled bars between parallel plates have been formulated for the microstrip case. Corresponding charts relating the capacitances to the width, spacing, thickness and height above the ground plane of coupled microstrips have been obtained. Examples of the use of these charts are shown in the design of hairpin lines and hybrid hairpin line filters as well as multiplexers using comb line filters. The hairpin line/hybrid hairpin line filters were designed to operate at a central frequency of 9÷5 GHz with 11 per cent bandwidth and 0÷5 dB ripple. The three filters constituting the comb line filters have center frequencies of 2÷4, 3÷0 and 3÷6 GHz. The components so designed were fabricated and tested. The dielectric used for the microstrip was teflon. Experimental curves for the attenuation (insertion loss) and VSWR are given. The design specifications arc satisfied quite well.

Reversible Formation of a Planar Chiral Ferrocenylboroxine and Its Supramolecular Structure

The boronic acid (pS)-1,2-NpFcB(OH)(2) (1) was obtained by treatment of the lithiated species (pS)-1,2-NpFcLi with B(O(i)Pr)(3), followed by acidic workup; subsequent dehydration gave the enantiomerically pure boroxine [(pS)-1,2-NpFcBO](3) (2) in 49% isolated yield. Multinuclear and 2D NMR spectroscopies, single-crystal X-ray diffraction, and elemental analysis served to confirm the structure of 2. In the solid-state structure, all three of the naphthyl groups point in one direction and all of the ferrocenyl moieties are placed on the opposite face of the boroxine ring, which is also the preferred conformation in solution according to a (1)H, (1)H-NOESY experiment. Cyclic voltammetry revealed three separate reversible oxidation events, which suggests significant communication between the ferrocenyl moieties. These redox processes experience a cathodic shift upon addition of 4-dimethylaminopyridine (DMAP) as a Lewis base. The six-membered ring is opened upon treatment with hot CHCl(3)/MeOH to form the methoxy species (pS)-1,2-NpFcB(OH)(OMe) (3), which can be converted back to the cycle 2 by dissolution in wet CHCl(3), followed by column chromatography on silica gel.

Supercapacitor studies on globular polypyrrole microstructures developed by a facile electrochemical route

Micrometre-scale polypyrrole (PPy) structures are synthesised for electrochemical supercapacitor applications by a facile electrochemical route. Globular polypyrrole microstructures of size <5 mu m are grown on stainless steel (SS-304) substrate by electro-polymerisation of pyrrole on oxygen microbubble templates electrochemically generated and stabilised in the presence of surfactant/supporting electrolyte/dopant beta-naphthalene sulfonic acid (beta-NSA). Microstructures obtained with scan range of 0-1.6 V (against Ag/AgCl) are uniformly distributed over the surface with high coverage density of 5 x 10(5) to 8 x 10 cm(-2). Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy revealed that the formed microstructures are of beta-NSA doped PPy. Scanning electron microscopy showed the uniform spread and good coverage of microstructures over the substrate. Supercapacitor properties of PPy films are investigated by cyclic voltammetry, electrochemical impedance spectroscopy and galvanostatic charge/discharge methods with 1.0 M KCl as electrolyte in a three-electrode electrochemical cell. Specific capacitance of 583 Fg(-1) is obtained, which is greater than the values (350-400 Fg(-1) highest) usually reported for this material. Electrochemical impedance spectroscopy proves the supercapacitance behaviour and explains the special inductive component of impedance observed in the high-frequency regime because of the globular structures of PPy deposited

Recent advances in auto exhaust catalysis

In last 30 years innovative research in the area of auto exhaust catalysis is being developed and CeO2 has been found to play a major role in this area due to its unique redox properties. In this review, auto exhaust emission and its impact on earth’s environment, global concern and recent advances in science and technology in automotive exhaust catalysis have been documented. A new preparative method of dispersing metal ions by solution combustion technique over CeO2 and TiO2 resulting mainly Ce1−xMxO2−δ, Ti1−xMxO2−δ and Ce1−x−yTixMyO2−δ (M = Pd, Rh and Pt) catalysts, structure of these materials, their catalytic properties towards auto exhaust catalysis, structure–property relation and mechanism of catalytic reactions are accounted here. In these materials, metal ions are incorporated into substrate matrix to a certain limit in the solid solution form and we have established a new direction in heterogeneous catalysis by turning to the concept of dispersed metal ions as catalytically active sites from the conventionally nurtured idea of metal particles as active centers for catalysis.

The Structure of the Thioredoxin-Triosephosphate Isomerase Complex Provides Insights into the Reversible Glutathione-Mediated Regulation of Triosephosphate Isomerase

Protein-protein interactions are crucial for many biological functions. The redox interactome encompasses numerous weak transient interactions in which thioredoxin plays a central role. Proteomic studies have shown that thioredoxin binds to numerous proteins belonging to various cellular processes, including energy metabolism. Thioredoxin has cross talk with other redox mechanisms involving glutathionylation and has functional overlap with glutaredoxin in deglutathionylation reactions. In this study, we have explored the structural and biochemical interactions of thioredoxin with the glycolytic enzyme, triosephosphate isomerase. Nuclear magnetic resonance chemical shift mapping methods and molecular dynamics-based docking have been applied in deriving a structural model of the thioredoxin-triosephosphate isomerase complex. The spatial proximity of active site cysteine residues of thioredoxin to reactive thiol groups on triosephosphate isomerase provides a direct link to the observed deglutathionylation of cysteine 217 in triosephosphate isomerase, thereby reversing the inhibitory effect of S-glutathionylation of triosephosphate isomerase.

The Structure of the Thioredoxin−Triosephosphate Isomerase Complex Provides Insights into the Reversible Glutathione-Mediate Regulation of Triosephosphate Isomerase

Protein−protein interactions are crucial for many biological functions. The redox interactome encompasses numerous weak transient interactions in which thioredoxin plays a central role. Proteomic studies have shown that thioredoxin binds to numerous proteins belonging to various cellular processes, including energy metabolism. Thioredoxin has cross talk with other redox mechanisms involving glutathionylation and has functional overlap with glutaredoxin in deglutathionylation reactions. In this study, we have explored the structural and biochemical interactions of thioredoxin with the glycolytic enzyme, triosephosphate isomerase. Nuclear magnetic resonance chemical shift mapping methods and molecular dynamics-based docking have been applied in deriving a structural model of the thioredoxin−triosephosphate isomerase complex. The spatial proximity of active site cysteine residues of thioredoxin to reactive thiol groups on triosephosphate isomerase provides a direct link to the observed deglutathionylation of cysteine 217 in triosephosphate isomerase, thereby reversing the inhibitory effect of S-glutathionylation of triosephosphate isomerase.

Optical, electrical and structural characterization of ZnO:Al thin films prepared by a low cost sol-gel method

ZnO:Al thin films were prepared on glass and silicon substrates by the sol-gel spin coating method. The x-ray diffraction (XRD) results showed that a polycrystalline phase with a hexagonal structure appeared after annealing at 400 degrees C for 1 h. The transmittance increased from 91 to about 93% from pure ZnO films to ZnO film doped with 1 wt% Al and then decreased for 2 wt% Al. The optical band gap energy increased as the doping concentration was increased from 0.5 wt% to 1 wt% Al. The metal oxide semiconductor (MOS) capacitors were fabricated using ZnO films deposited on silicon (100) substrates and electrical properties such as current versus voltage (I-V) and capacitance versus voltage (C-V) characteristics were studied. The electrical resistivity decreased and the leakage current increased with an increase of annealing temperature. The dielectric constant was found to be 3.12 measured at 1 MHz. The dissipation value for the film annealed at 300 degrees C was found to be 3.1 at 5 V. (C) 2011 Elsevier Ltd. All rights reserved.

Ferrocene-Conjugated Oxidovanadium(IV) Complexes as Potent Near-IR Light Photocytotoxic Agents

Ferrocene-conjugated oxidovanadium(IV) complexes [VO(Fc-tpy)(B)](ClO4)(2) (1-4) and [VO(Ph-tpy)(dppz)](ClO4)(2) (5) as a control [Fc = (eta(5)-C5H4)Fe-II(eta(5)-C5H5), Fc-tpy = 4'-ferrocenyl-2,2':6',2 `'-terpyridine, Ph-tpy = 4'-phenyl-2,2':6',2 `'-terpyridine, B = heterocyclic base: 2,2'-bipyridine (bpy in 1), 1,10-phenanthroline (phen in 2), dipyridoquinoxaline (dpq in 3), dipyridophenazine (dppz in 4)] were prepared and their DNA binding, DNA photocleavage activity and photocytotoxicity studied. The crystal structure of [VO(Fc-tpy)(bpy)](PF6)(2)center dot 3Me(2)CO shows a vanadyl group in six-coordinate (VON5)-O-IV coordination geometry, in which Fc-tpy and bpy display tridentate meridional and bidentate N-donor axial-equatorial binding modes, respectively. The one-electron paramagnetic complexes exhibit a charge-transfer band near 590 nm in DMF. The V-IV/V-III redox couple in 1-4 appears near -0.7 V, whereas the Fc moiety shows a response near 0.6 V vs. SCE in DMF/0.1 M TBAP. The complexes are good binders to calf thymus DNA with K-b values of 10(4)-10(6) M-1. DNA melting and viscometric data suggest groove and/or partial intercalative DNA binding of the complexes. Complexes 3-5 display DNA photocleavage activity in nearIR light of 785 nm. Complex 4 shows significant photocytotoxicity in visible light (400-700 nm) in HeLa cells with low dark toxicity.

High-Performance Metal-Insulator-Metal Capacitors Using Europium Oxide as Dielectric

We report the first demonstration of metal-insulator-metal (MIM) capacitors with Eu2O3 dielectric for analog and DRAM applications. The influence of different anneal conditions on the electrical characteristics of the fabricated MIM capacitors is studied. FG anneal results in high capacitance density (7 fF/mu m(2)), whereas oxygen anneal results in low quadratic voltage coefficient of capacitance (VCC) (194 ppm/V-2 at 100 kHz), and argon anneal results in low leakage current density (3.2 x 10(-8) A/cm(2) at -1 V). We correlate these electrical results with the surface chemical states of the films through X-ray photoelectron spectroscopy measurements. In particular, FG anneal and argon anneal result in sub-oxides, which modulate the electrical properties.