Unusual voltage sag event detection in power systems

Three multivariate statistical tools (principal component analysis, factor analysis, analysis discriminant) have been tested to characterize and model the sags registered in distribution substations. Those models use several features to represent the magnitude, duration and unbalanced grade of sags. They have been obtained from voltage and current waveforms. The techniques are tested and compared using 69 registers of sags. The advantages and drawbacks of each technique are listed

Analytical calculation of resonant inductance for zero voltage switching in phase-shifted full-bridge converters

The phase shift full bridge (PSFB) converter allows high efficiency power conversion at high frequencies through zero voltage switching (ZVS); the parasitic drain-to-source capacitance of the MOSFET is discharged by a resonant inductance before the switch is gated resulting in near zero turn-on switching losses. Typically, an extra inductance is added to the leakage inductance of a transformer to form the resonant inductance necessary to charge and discharge the parasitic capacitances of the PSFB converter. However, many PSFB models do not consider the effects of the magnetizing inductance or dead-time in selecting the resonant inductance required to achieve ZVS. The choice of resonant inductance is crucial to the ZVS operation of the PSFB converter. Incorrectly sized resonant inductance will not achieve ZVS or will limit the load regulation ability of the converter. This paper presents a unique and accurate equation for calculating the resonant inductance required to achieve ZVS over a wide load range incorporating the effects of the magnetizing inductance and dead-time. The derived equations are validated against PSPICE simulations of a PSFB converter and extensive hardware experimentations.

A new error measure for forecasts of household-level, high resolution electrical energy consumption

As low carbon technologies become more pervasive, distribution network operators are looking to support the expected changes in the demands on the low voltage networks through the smarter control of storage devices. Accurate forecasts of demand at the single household-level, or of small aggregations of households, can improve the peak demand reduction brought about through such devices by helping to plan the appropriate charging and discharging cycles. However, before such methods can be developed, validation measures are required which can assess the accuracy and usefulness of forecasts of volatile and noisy household-level demand. In this paper we introduce a new forecast verification error measure that reduces the so called “double penalty” effect, incurred by forecasts whose features are displaced in space or time, compared to traditional point-wise metrics, such as Mean Absolute Error and p-norms in general. The measure that we propose is based on finding a restricted permutation of the original forecast that minimises the point wise error, according to a given metric. We illustrate the advantages of our error measure using half-hourly domestic household electrical energy usage data recorded by smart meters and discuss the effect of the permutation restriction.

Voltage-gated sodium (NaV) channel blockade by plant cannabinoids does not confer anticonvulsant effects per se

Cannabidiol (CBD) is a non-psychoactive, well-tolerated, anticonvulsant plant cannabinoid, although its mechanism(s) of seizure suppression remains unknown. Here, we investigate the effect of CBD and the structurally similar cannabinoid, cannabigerol (CBG), on voltage-gated Na+ (NaV) channels, a common anti-epileptic drug target. CBG’s anticonvulsant potential was also assessed in vivo. CBD effects on NaV channels were investigated using patch-clamp recordings from rat CA1 hippocampal neurons in brain slices, human SH-SY5Y (neuroblastoma) cells and mouse cortical neurons in culture. CBG effects were also assessed in SH-SY5Y cells and mouse cortical neurons. CBD and CBG effects on veratridine-stimulated human recombinant NaV1.1, 1.2 or 1.5 channels were assessed using a membrane potential-sensitive fluorescent dye high-throughput assay. The effect of CBG on pentyleneterazole-induced (PTZ) seizures was assessed in rat. CBD (10M) blocked NaV currents in SH-SY5Y cells, mouse cortical neurons and recombinant cell lines, and affected spike parameters in rat CA1 neurons; CBD also significantly decreased membrane resistance. CBG blocked NaV to a similar degree to CBD in both SH-SY5Y and mouse recordings, but had no effect (50-200mg/kg) on PTZ-induced seizures in rat. CBD and CBG are NaV channel blockers at micromolar concentrations in human and murine neurons and recombinant cells. In contrast to previous reports investigating CBD, CBG had no effect upon PTZ-induced seizures in rat, indicating that NaV blockade per se does not correlate with anticonvulsant effects.

The impact of location and type on the performance of Low-Voltage network connected Battery Energy Storage Systems

This paper assesses the impact of the location and configuration of Battery Energy Storage Systems (BESS) on Low-Voltage (LV) feeders. BESS are now being deployed on LV networks by Distribution Network Operators (DNOs) as an alternative to conventional reinforcement (e.g. upgrading cables and transformers) in response to increased electricity demand from new technologies such as electric vehicles. By storing energy during periods of low demand and then releasing that energy at times of high demand, the peak demand of a given LV substation on the grid can be reduced therefore mitigating or at least delaying the need for replacement and upgrade. However, existing research into this application of BESS tends to evaluate the aggregated impact of such systems at the substation level and does not systematically consider the impact of the location and configuration of BESS on the voltage profiles, losses and utilisation within a given feeder. In this paper, four configurations of BESS are considered: single-phase, unlinked three-phase, linked three-phase without storage for phase-balancing only, and linked three-phase with storage. These four configurations are then assessed based on models of two real LV networks. In each case, the impact of the BESS is systematically evaluated at every node in the LV network using Matlab linked with OpenDSS. The location and configuration of a BESS is shown to be critical when seeking the best overall network impact or when considering specific impacts on voltage, losses, or utilisation separately. Furthermore, the paper also demonstrates that phase-balancing without energy storage can provide much of the gains on unbalanced networks compared to systems with energy storage.

Substitutional Impurities in PPV Crystals: An Intrinsic Donor-Acceptor System for High V(oc) Photovoltaic Devices

Defects are usually present in organic polymer films and are commonly invoked to explain the low efficiency obtained in organic-based optoelectronic devices. We propose that controlled insertion of substitutional impurities may, on the contrary, tune the optoelectronic properties of the underivatized organic material and, in the case studied here, maximize the efficiency of a solar cell. We investigate a specific oxygen-impurity substitution, the keto-defect -(CH(2)-C=O)- in underivatized crystalline poly(p-phenylenevinylene) (PPV), and its impact on the electronic structure of the bulk film, through a combined classical (force-field) and quantum mechanical (DFT) approach. We find defect states which suggest a spontaneous electron hole separation typical of a donor acceptor interface, optimal for photovoltaic devices. Furthermore, the inclusion of oxygen impurities does not introduce defect states in the gap and thus, contrary to standard donor-acceptor systems, should preserve the intrinsic high open circuit voltage (V(oc)) that may be extracted from PPV-based devices.

Donor-п-acceptor conjugated copolymers for photovoltaic applications : tuning the open-circuit voltage by adjusting the donor/acceptor ratio

A class of new conjugated copolymers containing a donor (thiophene)−acceptor (2-pyran-4-ylidene-malononitrile) was synthesized via Stille coupling polymerization. The resulting copolymers were characterized by 1H NMR, elemental analysis, GPC, TGA, and DSC. UV−vis spectra indicated that the increase in the content of the thiophene units increased the interaction between the polymer main chains to cause a red-shift in the optical absorbance. Cyclic voltammetry was used to estimate the energy levels of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO) and the band gap (Eg) of the copolymers. The basic electronic structures of the copolymers were also studied by DFT calculations with the GGA/B3LYP function. Both the experimental and the calculated results indicated an increase in the HOMO energy level with increasing the content of thiophene units, whereas the corresponding change in the LUMO energy level was much smaller. Polymer photovoltaic cells of a bulk heterojunction were fabricated with the structure of ITO/PEDOT/PSS (30 nm)/copolymer−PCBM blend (70 nm)/Ca (8 nm)/Al (140 nm). It was found that the open-circuit voltage (Voc) increased (up to 0.93 V) with a decrease in the content of thiophene units. Although the observed power convention efficiency is still relatively low (up to 0.9%), the corresponding low fill factor (0.29) indicates considerable room for further improvement in the device performance. These results provided a novel concept for developing high Voc photovoltaic cells based on donor-π-acceptor conjugated copolymers by adjusting the donor/acceptor ratio.

Pi-shaped MEMS architecture for lowering actuation voltage of RF switching

A wide band low actuation capacitive coupling electrostatic RF MEMS switching device is presented in this paper. The device includes a pi-shaped matching architecture containing two switches connected by a high impedance short transmission line. The device can act as a switch for any desired frequency whilst requiring only 12volts for actuation. By optimizing the length and the characteristic impedance of the transmission line, the switch can be tailored for desired frequency bands. The switch is calculated and simulated for Ka to V frequency bands demonstrating excellent improvements of RF characteristics.

Design and simulation of a low voltage wide band RF MEMS switch

This paper presents design of an electrostatic wide band shunt capacitive coupling RF MEMS switch with low actuation voltage. The key factors of the RF MEMS switch design are the proper scattering parameters, low actuation voltage, and the cost of the fabrication process. An overview of the recent low actuation voltage RFMEMS switches has been presented. These designs still suffer from the complexity of process, lack of reliability, limitation of frequency band, and process cost. RF characteristics of a shunt RF MEMS switches are specified mostly by coupling capacitor in upstate position of the membrane Cu. This capacitor is in trade-off with actuation voltage. In this work, the capacitor is eliminated by using two short high impedance transmission lines, at the input and output of the switch. The simulation results demonstrate an improvement in the RF characteristic of the switch.

Design of a high sensitive double-gate field-effect transistor biosensor for DNA detection

The study of interactions between organic biomolecules and semiconducting surfaces is an important consideration for the design and fabrication of field-effect-transistor (FET) biosensor. This paper demonstrates DNA detection by employing a double-gate field effect transistor (DGFET). In addition, an investigation of sensitivity and signal to noise ratio (SNR) is carried out for different values of analyte concentration, buffer ion concentration, pH, reaction constant, etc. Sensitivity, which is indicated by the change of drain current, increases non-linearly after a specific value (∼1nM) of analyte concentration and decreases non-linearly with buffer ion concentration. However, sensitivity is linearly related to the fluidic gate voltage. The drain current has a significant effect on the positive surface group (-NH2) compared to the negative counterpart (-OH). Furthermore, the sensor has the same response at a particular value of pH (5.76) irrespective of the density of surface group, although it decreases with pH value. The signal to noise ratio is improved with higher analyte concentrations and receptor densities.

Review of low actuation voltage RF MEMS electrostatic switches based on metallic and carbon alloys

Radio frequency micro electro mechanical systems (RF MEMS) have enabled a new generation of devices that bring many advantages due to their very high performances. There are many incentives for the integration of the RF MEMS switches and electronic devices on the same chip. However, the high actuation voltage of RF MEMS switches compared to electronic devices poses a major problem. By reducing the actuation voltage of the RF MEMS switch, it is possible to integrate it into current electronic devices. Lowering the actuation voltage will have an impact on RF parameters of the RF MEMS switches. This investigation focuses on recent progress in reducing the actuation voltage with an emphasis on a modular approach that gives acceptable design parameters. A number of rules that should be considered in design and fabrication of low actuation RF MEMS switches are suggested.

Highly linear low voltage low power CMOS LNA

A highly linear, low voltage, low power, low noise amplifier (LNA) using a novel nonlinearity cancellation technique is presented in this paper. Parallel Inductor (PI) matching is used to increase LNA gain by 3dB at the desired frequency. The linear LNA was designed and simulated in a TSMC 0.18μm CMOS process at 5GHz frequency. By employing the proposed technique, the IIP3 is improved by 12dB in contrast to the conventional folded cascode LNA, reaching −1dBm without having any significant effect on the other LNA parameters such as gain, NF and also power consumption. The proposed LNA also delivers a voltage gain (S21) of 12.25dB with a noise figure of 3.5dB, while consuming only 1.28mW of DC power with a low supply voltage of 0.6V.

RF techniques for lowering the actuation voltage of RF MEMS shunt capacitor switch for C-K band

Increasing the capacitance ratio in RF MEMS shunt capacitive switch will increase its RF performance but also raise its actuation voltage. To improve the RF performance of the switch without increasing its capacitance ratio, this paper explores two methods: reducing the LC resonance from the mm-wave into the X-band by using an inductive bridge, and using two short high impedance transmission lines at both ends of the CPW line. Accordingly, this paper presents the design and simulation of an electro-static low actuation voltage and a very high isolation multipurpose switch with a very large bandwidth. The simulation results are presented and discussed.

A high performance position sensorless surface permanent magnet synchronous motor drive based on flux angle

A position sensorless Surface Permanent Magnet Synchronous Motor (SPMSM) drive based on flux angle is presented in this paper. The motor equations are written in rotor fixed d-q reference frame. A PID controller is used to process the speed error to generate the reference torque current keeping the magnetizing current fixed. The estimated stator flux using Recurrent Neural Network (RNN) is used to find out the rotor position. The flux angle and the reference current phasor angle are used in vector rotator to generate the reference phase currents. Hysteresis current controller block controls the switching of the 3-phase inverter to apply voltage to the motor stator. Simulation studies on different operating conditions indicate the acceptability of the drive system. The drive system only requires a speed transducer and is free from position sensor requirement. The proposed control scheme is robust under load torque disturbances and motor parameter variations. It is also simple and low cost to implement in a practical environment.