A novel technique for predicting ionizing radiation effects of commercial MOS devices

A nondestructive selection technique for predicting ionizing radiation effects of commercial metal-oxide-semiconductor (MOS) devices has been put forward. The basic principle and application details of this technique have been discussed. Practical application for the 54HC04 and 54HC08 circuits has shown that the predicted radiation-sensitive parameters such as threshold voltage, static power supply current and radiation failure total dose are consistent with the experimental results obtained only by measuring original electrical parameters. It is important and necessary to choose suitable information parameters. This novel technique can be used for initial radiation selection of some commercial MOS devices.

Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors

A single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors (MOSFETs) alternately, allows current quantization at 20 K due to single-electron transfer. Another MOSFET is placed at the drain side of the turnstile to form an electron storage island. Therefore, one-by-one electron entrance into the storage island from the turnstile can be detected as an abrupt change in the current of the electrometer, which is placed near the storage island and electrically coupled to it. The correspondence between the quantized current and the single-electron counting was confirmed.

Structure and visible luminescence of ZnO nanoparticles

ZnO nanoparticles were synthesized in ethanolic solution using a sol-gel method. The structural and optical properties were investigated by X-ray diffraction, transmission electron microscopy, UV absorption, and photoluminescence. After annealing at 200 degrees C, the particle size is increased and the peak of defect luminescence in the visible region is changed. A yellow emission was observed in the as-prepared sample and a green emission in the annealed sample. The change of the visible emission is related to oxygen defects. Annealing in the absence of oxygen would increase oxygen vacancies. (c) 2006 Elsevier Ltd. All rights reserved.

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

The optical properties and the band lineup in GaNAs/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL) technique were investigated. It was found that the low-temperature PL is dominated by the intrinsic localized exciton emission. By fitting the experimental datawith a simple calculation, band offset of the GaN0.015As0.985/GaAs heterostructure was estimated. Moreover, DeltaE(c), the discontinuity of the conduction band was found to be a nonlinear function of the nitrogen composition (chi) and the average variation of DeltaE(c) is about 0. 110eV per % N, such smaller than that reported on the literature to (0.156 similar to 0.175 eV/N %). In addition, Qc has little change whtn N composition increares, with an experimential relation of QC approximate tox(0.25). The band bowing coefficient (b) was also studied in this paper. The measured band bowing coefficient shows a strong function of chi, giving an experimental support to the theoretic calculation of Wei Su-Huai and Zunger Alex (1996).

Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate

We analyze low-temperature Raman and photoluminescence spectra of MBE-grown GaN layers on sapphire. Strong and sharp Raman peaks are observed in the low frequency region. These peaks, which are enhanced by excitation in resonance with yellow luminescence transitions, are attributed to electronic transitions related to shallow donor levels in hexagonal GaN. It is proposed that a low frequency Raman peak at 11.7 meV is caused by a pseudo-local vibration mode related to defects involved in yellow luminescence transitions. The dependence of the photoluminescence spectra on temperature gives additional information about the residual impurities in these GaN layers.

Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers

A theoretical study of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot (QD) lasers is presented. The expression of modal gain is derived, which includes an effective ratio that describes how many QDs contribute to the modal gain. The calculated results indicate that the modal gain with the effective ratio is much smaller than that without the effective ratio. The calculated maximum modal gain is is a good agreement with the experimental data. Furthermore, QDs with lower height or smaller aspect ratio are beneficial in achieving a larger maximum modal gain that leads to lower threshold current density and higher differential modal gain. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Structure and visible luminescence of ZnO nanoparticles

ZnO nanoparticles were synthesized in ethanolic solution using a sol-gel method. The structural and optical properties were investigated by X-ray diffraction, transmission electron microscopy, UV absorption, and photoluminescence. After annealing at 200 degrees C, the particle size is increased and the peak of defect luminescence in the visible region is changed. A yellow emission was observed in the as-prepared sample and a green emission in the annealed sample. The change of the visible emission is related to oxygen defects. Annealing in the absence of oxygen would increase oxygen vacancies. (c) 2006 Elsevier Ltd. All rights reserved.

基于BDD的增量启发式方法及其应用

增量启发式搜索是一种利用先前的搜索信息和启发信息提高本次搜索效率的方法，通常可用来解决动态环境下的重规划问题。在人工智能领域，一些实时系统常常需要根据外界环境的变化不断修正自身，这样就会产生一系列变化较小的相似问题，此时应用增量启发式搜索将会非常有效。 另一方面，基于BDD的强大的搜索技术利用BDD有效操作性以及化简后唯一性的优点，在一定程度上缓解了模型检测的状态爆炸问题，使得被检测状态的个数大大增加。 1、本文结合基于BDD的启发式搜索和基于BDD的增量搜索这两种方法给出了基于BDD的增量启发式搜索方法，基于BDD的增量启发式搜索综合了基于BDD的搜索、增量搜索以及启发式搜索这三种方法的优点。它既用BDD作为数据结构以提高搜索的空间效率，又结合了增量搜索的思想来提高重搜索的效率，同时，又引入了启发函数来进一步压缩搜索空间。 2、本文介绍了基于BDD的增量启发式搜索算法BDDRPA*并用大量的实验结果证明BDDRPA*的高效性。给定一个搜索问题，BDDRPA*算法先用基于BDD的启发式搜索方法搜出一条从初始节点到目标节点的最短路径；接着，问题的状态格局发生改变，BDDRPA*再用基于BDD的增量搜索方法根据旧格局的迁移关系BDD_T构造出新格局的迁移关系BDD_{T'}，然后再用启发式方法搜索路径，如此反复下去。 3、本文介绍了基于BDD的动态增量启发式搜索算法BDDD*并用大量的实验结果证明BDDD*的高效性。BDDD*算法在机器人边走边扫描的过程中，不断根据机器人新获得的信息更新已知地图并重新规划路线。每次规划时，BDDD*都假设未知的领域没有任何障碍物，也就是每个位置都是可通的，它按照这个假设去计算从当前位置到目标位置的最短路径。如果在行走的过程中扫描到了障碍物，它就把这条信息添加到它的地图中，然后重复上面的过程，直到到达目标位置或者发现每条路径都被堵死为止。 BDDRPA*算法和BDDD*算法可以应用到机器人线路规划、智能交通及计算机网络的线路规划问题中。另外，在机器学习和控制领域，也可以考虑使用BDDRPA*算法和BDDD*算法。

a constraint solver and its application to path feasibility analysis

Many testing methods are based on program paths. A well-known problem with them is that some paths are infeasible. To decide the feasibility of paths, we may solve a set of constraints. In this paper, we describe constraint-based tools that can be used for this purpose. They accept constraints expressed in a natural form, which may involve variables of different types such as integers, Booleans, reals and fixed-size arrays. The constraint solver is an extension of a Boolean satisfiability checker and it makes use of a linear programming package. The solving algorithm is described, and examples are given to illustrate the use of the tools. For many paths in the testing literature, their feasibility can be decided in a reasonable amount of time.

一个面向电子政务的信息交换与共享平台的设计与实现

基于J2EE、XML等技术,设计并实现了一个面向电子政务的信息交换与共享平台.对平台的总体结构、元数据定义与管理、数据交换模式等关键问题进行了论述,最后给出了平台的模块实现.该平台已经应用于北京市信息资源管理中心,实现了遥感信息、区县图层、企业基础信息等资源的交换与共享.

手持移动设备中多通道交互的通用开发框架

提出的多通道交互通用开发框架可以快速地开发出支持多通道交互的应用,也可以将已经存在的应用快速更改为多通道交互应用;基于此理论,设计和实现了一种支持手写笔和语音输入的多通道家电开关控制系统。具体地阐明了实际开发中应该重点注意的环节,希望能够对当前手持移动设备的多通道交互化有所借鉴。