Effect of vacuum-induced coherence on lasing without inversion in an equispaced three-level ladder system

The effects of vacuum-induced coherence (VIC) on the properties of the absorption and gain of the probe field in an equispaced three-level ladder atomic system are investigated. It is found that lasing without inversion (LWI) is remarkably enhanced due to the effect of VIC in the case of the small incoherent pump rate.

基于偏振度检测的光纤电流传感方案

本文提出了一种将光学谐振腔中多次来回反射所产生的法拉第旋转积累效应转化为光学信号偏振度变化的光纤电流传感方案。这种方案的主要优点是可以克服环境等因素的扰动带来偏振态变化所产生的影响。文中对所提出方案的特性进行了简单的理论分析和模拟计算，并给出了相应的实验结果验证。

Analysis on the spin reorientation of GdFeCo/DyFeCo exchange-coupled double-layer films

In this paper, GdFeCo/DyFeCo exchange-coupled double-layer films used for center aperture type magnetically induced super resolution were investigated through experiments and theoretical calculation. The samples were prepared by magnetron sputtering method. The polar Kerr effect was measured to prove the spin reorientation of the readout layer. Theoretical study of magnetization profiles was performed on the basis of the mean-field theory and the continuum model. The theoretical results showed that the magnetization orientation of the readout layer changed gradually from in-plane to out-of-plane with the rise of the temperature. Theoretical analysis explained the experimental results successfully. (c) 2005 Elsevier B.V. All rights reserved.

Ultrafast non-linear optical properties of Ge20As25Se55 chalcogenide films

The non-resonant third-order non-linear optical properties of amorphous Ge20As25Se55 films were studied experimentally by the method of the femtosecond optical heterodyne detection of optical Kerr effect. The real and imaginary parts of complex third-order optical non-linearity could be effectively separated and their values and signs could be also determined, which were 6.6 x 10(-12) and -2.4 x 10(-12) esu, respectively. Amorphous Ge20As25Se55 films showed a very fast response in the range of 200 fs under ultrafast excitation. The ultrafast response and large third-order non-linearity are attributed to the ultrafast distortion of the electron orbitals surrounding the average positions of the nucleus of Ge, As and Se atoms. The high third-order susceptibility and a fast response time of amorphous Ge20As25Se55 films makes it a promising material for application in advanced techniques especially in optical switching. (c) 2005 Elsevier B.V. All rights reserved.

聚焦光斑磁光极克尔磁滞回线的热效应分析

实验设计并组建了一套磁光极克尔磁滞回线测量装置，该装置可以通过改变照射到样品上的激光功率来改变薄膜样品上被聚焦光斑照射的测试点的温度。同时通过计算模拟了激光照射在TbFeCo磁光薄膜上的温度分布情况，得到了薄膜的矫顽力随照射激光功率的变化关系，由此可以确定薄膜的居里温度和补偿温度。为研究磁光薄膜样品在各种温度条件下，磁光性能的变化以及多层磁光薄膜的磁耦合效应提供了有效的手段。

Non-resonant third-order non-linear optical properties of amorphous GeSe2 film

The real and imaginary parts of third-order susceptibility of amorphous GeSe2 film were measured by the method of the femtosecond optical heterodyne detection of optical Kerr effect at 805 nm with the 80 fs ultra fast pulses. The results indicated that the values of real and imaginary parts were 8.8 x 10(-12) esu and -3.0 x 10(-12) esu, respectively. An amorphous GeSe2 film also showed a very fast response within 200 fs. The ultra fast response and large third-order non-linearity are attributed to the ultra fast distortion of the electron orbits surrounding the average positions of the nucleus of Ge and Se atoms. (c) 2005 Elsevier B.V. All rights reserved.

Effect of bismuth oxide on the thermal stability and Judd-Ofelt parameters of Er 3(+)/Yb3(+) co-doped aluminophosphate glasses

The Er3+/Yb3+ co-doped glasses with compositions of xBi(2)O(3)-(65-x)P2O5-4Yb(2)O(3)-11Al(2)O(3)-5BaO-15Na(2)O (where x = 0, 2.5, 5, 7.5 and 10 mol%) were prepared using the normal melt quench technique. The optical absorption spectra of the glasses were recorded in the wavelength range 300-1700 nm. The effect of Bi2O3 content on the thermal stability and absorption spectra of glasses was investigated. In addition, the Judd-Ofelt parameters and oscillator strengths were calculated by employing Judd-Ofelt theory. It was observed that the positions of the fundamental absorption edge and cut-off wavelength shifted towards red as the content of Bi2O3 increased. However, there were no red shifts found both in the peak wavelength and in the center of mass wavelength of all absorption bands with Bi2O3 content increasing. The results of Judd-Ofelt theory analysis showed that Judd-Ofelt parameters Omega(t), (t = 2, 4, 6) changed sharply when Bi2O3 concentration exceeded 5 mol%. The variation trends of experimental oscillator strength were similar with those of Judd-Ofelt parameters as function of Bi2O3 concentrations. Moreover, differential scanning calorimetry experiments showed that the increases of Bi2O3 content weakened the network structure and then lowered the thermal stability of the glasses. The spontaneous emission probability A(rad), branching ratio beta and the radiative lifetime tau(rad) were also calculated and analyzed. The stimulated emission cross-section of Er3+ was calculated according to the McCumber theory. It was found that the stimulated emission cross-section of Er3+ was monotonically increases with Bi2O3 content increasing. (C) 2006 Elsevier B.V. All rights reserved.

Effect of F- ions on spectroscopic properties of Yb3+-doped zinc-tellurite glasses

this paper is retracted

Flux line lattice structure and behavior in antiphase boundary free vicinal YBa2Cu3O7-delta thin films

Field angle dependent critical current, magneto-optical microscopy and high resolution electron microscopy studies have been performed on YBa2Cu3O7-delta thin films grown on miscut substrates. High resolution electron microscopy images show that the films studied exhibited clean epitaxial growth with a low density of antiphase boundaries and stacking faults. Any antiphase boundaries (APBs) formed near the film substrate interface rapidly healed rather than extending through the thickness of the film. Unlike vicinal films grown on annealed substrates, which contain a high density of antiphase boundaries, magneto-optical imaging showed no filamentary flux penetration in the films studied. The flux penetration is, however, asymmetric. This is associated with intrinsic pinning of flux strings by the tilted a-b planes and the dependence of the pinning force on the angle between the local field and the a-b planes. Field angle dependent critical current measurements exhibited the striking vortex channeling effect previously reported in vicinal films. By combining the results of three complementary characterization techniques it is shown that extended APB free films exhibit markedly different critical current behavior compared to APB rich films. This is attributed to the role of APB sites as strong pinning centers for Josephson string vortices between the a-b planes. (C) 2003 American Institute of Physics.

Electric-field tuning s-d exchange interaction in quantum dots

We investigate theoretically the electron-hole pair states in CdTe quantum dot (QD) containing a single Mn2+ ion by the magneto-optical spectrum tuned by the electric field. It is shown that the electric field does not only tune the spin splitting via the sp-d exchange interaction but also affect significantly the anticrossing behavior in the photoluminescence spectrum. This anticrossing is caused by the s-d exchange interaction and/or the hole mixing effect, which depends sensitively on the shape of the QD. (C) 2008 American Institute of Physics.

Ultrafast dynamics of four-state magnetization reversal in (Ga,Mn)As

The ultrafast dynamics of in-plane four-state magnetization reversal from compressively strained (Ga,Mn)As film was investigated by magneto-optical Kerr rotation measurement. The magnetization reversal signal was dramatically suppressed upon pumping, and recovered slowly with time evolution. The low switching field H-c1 increased abruptly from 30 to 108 G on the first several picoseconds and recovered back to the value before optical pumping within about 500 ps, whereas the high switching field H-c2 did not change obviously upon pumping, implying a domain-wall nucleation/propagation at low fields and coherent magnetization rotation at high fields in the magnetization reversal process.

Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure

We report experimental results of the effect of Ka-band microwave on the spin dynamics of electrons in a two-dimensional electron system (2DES) in a GaAs/Al0.35Ga0.65As heterostructure via time-resolved Kerr rotation measurements. While the microwave reduces the transverse spin lifetime of electrons in the bulk GaAs, it significantly increases that in the 2DES, from 745 to 1213 ps, when its frequency is close to the Zeeman splitting of the electrons in the magnetic field. Such a microwave-enhanced spin lifetime is ascribed to the microwave-induced electron scattering which leads to a "motional narrowing" of spins via D'yakonov-Perel' mechanism.

Effect of misfit dislocation originated from strained layer on photoluminescence properties of InxGa1-xN/GaN multiple quantum wells

In-x Ga1-xN/GaN multiple quantum well (MQW) samples with strain-layer thickness lager/less than the critical one are investigated by temperature-dependent photoluminescence and transmission electron microscopy, and double crystal x-ray diffraction. For the sample with the strained-layer thickness greater than the critical thickness, we observe a high density of threading dislocations generated at the MQW layers and extended to the cap layer. These dislocations result from relaxation of the strain layer when its thickness is beyond the critical thickness. For the sample with the strained-layer thickness greater than the critical thickness, temperature-dependent photoluminescence measurements give evidence that dislocations generated from the MQW layers due to strain relaxation are main reason of the poor photoluminescence property, and the dominating status change of the main peak with increasing temperature is attributed to the change of the radiative recombination from the areas including dislocations to the ones excluding dislocations.

Magnetoexcitonic optical absorption in semiconductors under strong magnetic fields and intense terahertz radiation in the Voigt configuration

The magnetoexcitonic optical absorption of a GaAs bulk semiconductor driven by a terahertz (THz) field is investigated numerically. The method of the solution of the initial-value problem, in combination with the perfect matched layer technique, is used to calculate the optical susceptibility, with Coulomb interaction, Landau quantization, and THz fields involved nonperturbatively. It shows that there appear replicas and sidebands of magnetoexciton of different Landau levels, which greatly enrich the magneto-optical spectrum in the presence of a driving THz field. Copyright (C) EPLA, 2008.

Characterisation and spectroscopy of laser-cooled atoms with an optical nanofibre

In this thesis, a magneto-optical trap setup is used to laser cool and confine a cloud of 85Rb. The cloud typically contains 108 atoms in a 1 mm3 volume at a temperature in the region of the Doppler Limit (146 _K for 85Rb). To study the cold cloud, a subwavelength optical fibre - a nanofibre, or ONF - is positioned inside the cloud. The ONF can be used in two ways. Firstly, it is an efficient fluorescence collection tool for the cold atoms. Loading times, lifetimes and temperatures can be measured by coupling the atomic fluorescence to the evanescent region of the ONF. Secondly, the ONF is used as a probe beam delivery tool using the evanescent field properties of the device, allowing one to perform spectroscopy on few numbers of near-surface atoms. With improvements in optical density of the cloud, this system is an ideal candidate in which to generate electromagnetically induced transparency and slow light. A theoretical study of the van der Waals and Casimir-Polder interactions between an atom and a dielectric surface is also presented in this work in order to understand their effects in the spectroscopy of near-surface atoms.