Model for zinc oxide varistor

Zinc oxide varistors are very complex systems, and the dominant mechanism of voltage barrier formation in these systems has not been well established. Yet the MNDO quantum mechanical theoretical calculation was used in this work to determine the most probable defect type at the surface of a ZnO cluster. The proposed model represents well the semiconducting nature as well as the defects at the ZnO bulk and surface. The model also shows that the main adsorption species that provide stability at the ZnO surface are O-, O2 -, and O2.

Electrical properties of the SnO2-based varistor

The non-linear electrical properties of CoO-doped and Nb205-doped SnO2 ceramics were characterized. X-ray diffraction and scanning electron microscopy indicated that the system is single phase. The electrical conduction mechanism for low applied electrical field was associated with thermionic emission of the Schottky type. An atomic defect model based on the Schottky double-barrier formation was proposed to explain the origin of the potential barrier at the ceramic grain boundaries. These defects create depletion layers at grain boundaries, favouring electron tunnelling at high values of applied electrical field. © 1998 Chapman & Hall.

MnO2 influence on the electrical properties of SnO2-based ceramic systems

Tin dioxide is an n-type semiconductor that when doped with other metallic oxides exhibits non-linear electric behavior with high non-linear coefficient values typical of a varistor. In this work, electrical properties of the SnO2.CoO.Ta2O5 and SnO2.CoO.MnO2.Ta2O5 ceramics systems were studied with the objective of analyzing the influence of MnO2 on sintering behavior and electrical properties of these systems. The compacts were prepared by powder mixture process and sintered at 1300°C for 1 hour, in air, using a constant heating rate of 10°C/min. The morphological and structural properties were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The densities of the sintered ceramics were measured using the Archimedes method. The SnO2.CoO.Ta2O5 and SnO2.CoO.MnO2.Ta2O5 systems presented breakdown fields (Eb) about 3100 V.cm-1 and 3800 V.cm-1, respectively, and non-linear coefficient (α) about 10 and 20, respectively.

Degradación y recuperación de varistores de ZnO

In the present work it was studied the main aspect that influences on degradation and physical-chemical properties at grain-boundary region of metal oxide varistors and its consequences on microstructure and nonohmic electric properties. Based on the comprehension of the degradation aspects it was proposed some methodologies to recover the varistors nonohmic properties after being failed with long (2000 μs) and short current pulses (8/20 μs). Our analysis shown that one of the cause of degradation process is related to the lowering of oxygen species amount at grain-boundary region. Therefore, it is possible to re-promote oxygen enrichment of such regions by specific thermal treatments in rich oxygen atmospheres (the best condition found in the present work was temperatures around 900°C for 2 h at an oxygen flux of 15 1/h). The proposed nonohmic properties recovering procedure appear to be valid for all kind metal oxide varistors studied and is very important from technological point of view.

Influencia del TiO2 y Al2O3 sobre las propiedades eléctricas y microestructurales de cerámicas de SnO2 obtenidas por el método Pechini

Tin oxide has wakened up great scientific and technological interest for its potential use in varistors production and as gas sensor. In order to improve the microstructural and electrical properties in SnO varistor ceramics, the influence of differents dopants used, like TiO2 and Al2O3, is under research. The effect of TiO2 and Al2O3 on the properties of Sn-Co-Nb varistor Systems obtained by the Pechini method has been investigated in this work. Characterization of synthesized raw material was performed by X-Ray Diffraction (XRD) and Scanning Electronic Microscopy (SEM). The microstructural and electrical characterization of sintered samples show that the TiO2 favors the grain growth and the Al2O3, contributes to the decrease it, effect that is manifested in the Sn-Co-Nb varistor systems. Breakdown field increase up to 6300V/cm with increasing Al2O3 content and non-linear coefficients with α=22 were obtained.

Uma contribuição para o estudo da estrutura de bandas de energia em filmes finos de 'SNO IND.2'

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Influência do óxido de cromo nas propriedades varistoras do óxido de estanho

Pós-graduação em Química - IQ

Caracterização elétrica de cerâmicas à base de SnO2 dopadas com Mn, Nb e Cr

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Propriedades varistoras de sistemas a base de 'SN''OIND.2' dopados con 'ZN''O', 'W''OIND.3', 'NBIND.2''OIND.5', 'ALIND.2''OIND.3', 'CRIND.2''OIND.3', 'MN''OIND.2', 'CO''O', 'CU''O', 'V''CLIND.3'

Pós-graduação em Química - IQ

Caracterização elétrica e microestrutural de cerâmicas varistoras de baixa tensão à base de ('SN IND.1-x''TI IND.x')'O IND.2' e 'SN''O IND.2' dopados com 'CO''O' e 'NB IND.2''O IND.5'

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo de um sistema varistor à base de 'SN''O IND.2' dopado com terras-raras

Pós-graduação em Química - IQ

Síntese e caracterização elétrica de filmes varistores à base de 'SN''O IND.2' modificados superficialmente por difusão 'CR POT.3+' na região do contorno de grão

Pós-graduação em Química - IQ

Electrical Properties at Grain Boundaries Influenced by Cr3+ Diffusion in SnO2.ZnO.Nb2O5-Films Varistor Prepared by Electrophoresis Deposition

SnO2-based varistors are strong candidates to replace the ZnO-based varistors due to ordering fewer additives to improve its electrical behavior as well as by showing similar nonlinear characteristics of ZnO varistors. In this work, SnO2-nanoparticles based-varistors with addition of 1.0 %mol of ZnO and 0.05 %mol of Nb2O5 were synthesized by chemical route. SnO2.ZnO.Nb2O5-films with 5 μm of thickness were obtained by electrophoretic deposition (EPD) of the nanoparticles on Si/Pt substrate from alcoholic suspension of SnO2-based powder. The sintering step was carried out in a microwave oven at 1000 °C for 40 minutes. Then, Cr3+ ions were deposited on the films surface by EPD after the sintering step. Each sample was submitted to different thermal treatments to improve the varistor behavior by diffusion of ions in the samples. The films showed a nonlinear coefficient (α) greater than 9, breakdown voltage (VR) around 60 V, low leakage current (IF ≈ 10-6 A), height potential barrier above 0.5 eV and grain boundary resistivity upward of 107 Ω.cm.