Model for zinc oxide varistor


Autoria(s): Santos, J. D.; Longo, Elson; Leite, E. R.; Varela, José Arana
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

27/05/2014

27/05/2014

01/05/1998

Resumo

Zinc oxide varistors are very complex systems, and the dominant mechanism of voltage barrier formation in these systems has not been well established. Yet the MNDO quantum mechanical theoretical calculation was used in this work to determine the most probable defect type at the surface of a ZnO cluster. The proposed model represents well the semiconducting nature as well as the defects at the ZnO bulk and surface. The model also shows that the main adsorption species that provide stability at the ZnO surface are O-, O2 -, and O2.

Formato

1152-1157

Identificador

http://dx.doi.org/10.1557/JMR.1998.0164

Journal of Materials Research, v. 13, n. 5, p. 1152-1157, 1998.

0884-2914

http://hdl.handle.net/11449/65439

10.1557/JMR.1998.0164

WOS:000073272500015

2-s2.0-0000026039

2-s2.0-0000026039.pdf

Idioma(s)

eng

Relação

Journal of Materials Research

Direitos

closedAccess

Tipo

info:eu-repo/semantics/article