Breakdown in p‐n junction diodes made on polycrystalline silicon of large grain size

This communication describes the voltage‐current characteristics in the breakdown region of p‐n junctions made on polycrystalline silicon of large grain size. The observed soft breakdown characteristics have been explained by taking into account the effect of curvature of the junction near the grain boundaries.

The high speed water tunnel facility at the Indian Institute of Science

The present article about the high speed water tunnel facility at the Indian Institute of Science, Bangalore, provides a general description of the tunnel circuit, and brief reports on the performance of the facility and some typical results from investigations carried out in it. A unique aspect of the facility is that it has a horizontal resorber in the form of a large cylindrical tank located in the lower leg of the circuit. The facility has been used, among other things, for flow visualization studies, and investigations on marine propeller hydrodynamics and “synthetic cavitation”. The last topic has been primarily developed at the Indian Institute of Science and shows considerable promise for basic work in cavitation inception and noise.

Experimental investigation of the dependence of barrier height on metal work function for metal---SiO2---p---Si (MIS) Schottky-barrier diodes in the presence of inversion

The dependence of barrier height on the metal work function of metal-SiO2-p-Si Schottky barrier diodes was investigated and nonlinearity was found. This is explained by the theoretical model proposed recently by Chattopadhyay and Daw. The values of interface trap density and fixed charge density of the insulating layer of the diodes were calculated using this model and found to be appreciably different from those estimated by the usual method.

Correlation of helicopter rotor aeroelastic response with HART-II wind tunnel test data

Purpose - This paper aims to validate a comprehensive aeroelastic analysis for a helicopter rotor with the higher harmonic control aeroacoustic rotor test (HART-II) wind tunnel test data. Design/methodology/approach - Aeroelastic analysis of helicopter rotor with elastic blades based on finite element method in space and time and capable of considering higher harmonic control inputs is carried out. Moderate deflection and coriolis nonlinearities are included in the analysis. The rotor aerodynamics are represented using free wake and unsteady aerodynamic models. Findings - Good correlation between analysis and HART-II wind tunnel test data is obtained for blade natural frequencies across a range of rotating speeds. The basic physics of the blade mode shapes are also well captured. In particular, the fundamental flap, lag and torsion modes compare very well. The blade response compares well with HART-II result and other high-fidelity aeroelastic code predictions for flap and torsion mode. For the lead-lag response, the present analysis prediction is somewhat better than other aeroelastic analyses. Research limitations/implications - Predicted blade response trend with higher harmonic pitch control agreed well with the wind tunnel test data, but usually contained a constant offset in the mean values of lead-lag and elastic torsion response. Improvements in the modeling of the aerodynamic environment around the rotor can help reduce this gap between the experimental and numerical results. Practical implications - Correlation of predicted aeroelastic response with wind tunnel test data is a vital step towards validating any helicopter aeroelastic analysis. Such efforts lend confidence in using the numerical analysis to understand the actual physical behavior of the helicopter system. Also, validated numerical analyses can take the place of time-consuming and expensive wind tunnel tests during the initial stage of the design process. Originality/value - While the basic physics appears to be well captured by the aeroelastic analysis, there is need for improvement in the aerodynamic modeling which appears to be the source of the gap between numerical predictions and HART-II wind tunnel experiments.

Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes

InN/GaN heterostructure based Schottky diodes were fabricated by plasma-assisted molecular beam epitaxy. The temperature dependent electrical transport properties were carried out for InN/GaN heterostructure. The barrier height and the ideality factor of the Schottky diodes were found to be temperature dependent. The temperature dependence of the barrier height indicates that the Schottky barrier height is inhomogeneous in nature at the heterostructure interface. The higher value of the ideality factor and its temperature dependence suggest that the current transport is primarily dominated by thermionic field emission (TFE) other than thermionic emission (TE). The room temperature barrier height obtained by using TE and TFE models were 1.08 and 1.43 eV, respectively. (C) 2011 American Institute of Physics. doi: 10.1063/1.3549685]

Review of hypersonic research investigations in IISc shock tunnel (HST1)

Real gas effects dominate the hypersonic flow fields encountered by modem day hypersonic space vehicles. Measurement of aerodynamic data for the design applications of such aerospace vehicles calls for special kinds of wind tunnels capable of faithfully simulating real gas effects. A shock tunnel is an established facility commonly used along with special instrumentation for acquiring the data for this purpose within a short time period. The hypersonic shock tunnel (HST1), established at the Indian Institute of Science (IISc) in the early 1970s, has been extensively used to measure the aerodynamic data of various bodies of interest at hypersonic Mach numbers in the range 4 to 13. Details of some important measurements made during the period 1975-1995 along with the performance capabilities of the HST1 are presented in this review. In view of the re-emergence of interest in hypersonics across the globe in recent times, the present review highlights the Suitability of the hypersonic shock tunnel at the IISc for future space application studies in India.

Pulsed laser deposited ZnO/ZnO:Li multilayer for blue light emitting diodes

Thin films of ZnO, Li doped ZnO (ZLO) and multilayer of ZnO and ZLO (ZnO/ZLO) were grown on silicon and corning glass substrates by pulsed laser deposition technique. Single phase formation and the crystalline qualities of the films were analyzed by X-ray diffraction and Li composition in the film was investigated to be 15 wt% by X-ray photoelectron spectroscopy. Raman spectrum reveals the hexagonal wurtzite structure of ZnO, ZLO and ZnO/ZLO multilayer and confirms the single phase formation. Films grown on corning glass shows more than 80% transmittance in the visible region and the optical band gaps were calculated to be 3.245, 3.26 and 3.22 eV for ZnO, ZLO and ZnO/ZLO, respectively. An efficient blue emission was observed in all films which were grown on silicon (1 0 0) substrate by photoluminescence (PL). PL measurements at different temperatures reveal that the PL emission intensity of ZnO/ZLO multilayer was weakly dependent on temperature as compared to the single layers of ZnO and ZLO and the wavelength of emission was independent of temperature. Our results indicate that ZnO/ZLO multilayer can be used for the fabrication of blue light emitting diodes. (C) 2011 Elsevier B.V. All rights reserved.

Shock tunnel study of spiked aerodynamic bodies flying at hypersonic Mach numbers

A three-component accelerometer balance system is used to study the drag reduction effect of an aerodisc on large angle blunt cones flying at hypersonic Mach numbers. Measurements in a hypersonic shock tunnel at a freestream Mach number of 5.75 indicate more than 50% reduction in the drag coefficient for a 120degrees apex angle blunt cone with a forward facing aerospike having a flat faced aerodisc at moderate angles of attack. Enhancement of drag has been observed for higher angles of attack due to the impingement of the flow separation shock on the windward side of the cone. The flowfields around the large angle blunt cone with aerospike assembly flying at hypersonic Mach numbers are also simulated numerically using a commercial CFD code. The pressure and density levels on the model surface, which is under the aerodynamic shadow of the flat disc tipped spike, are found very low and a drag reduction of 64.34% has been deduced numerically.

Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures

The current�voltage characteristics of Au/n-GaAs Schottky diodes grown by metal-organic vapor-phase epitaxy on Ge substrates were determined in the temperature range 80�300 K. The zero-bias barrier height for current transport decreases and the ideality factor increases at low temperatures. The ideality factor was found to show the T0 effect and a higher characteristic energy. The excellent matching between the homogeneous barrier height and the effective barrier height was observed and infer good quality of the GaAs film. No generation�recombination current due to deep levels arising during the GaAs/Ge heteroepitaxy was observed in this study. The value of the Richardson constant was found to be 7.04 A K?2 cm?2, which is close to the value used for the determination of the zero-bias barrier height.

Photocatalytic properties of KBiO(3) and LiBiO(3) with tunnel structures

In the present study, KBiO(3) is synthesized by a standard oxidation technique while LiBiO(3) is prepared by hydrothermal method. The synthesized catalysts are characterized by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), BET surface area analysis and Diffuse Reflectance Spectroscopy (DRS). The XRD patterns suggest that KBiO(3) crystallizes in the cubic structure while LiBiO(3) crystallizes in orthorhombic structure and both of these adopt the tunnel structure. The SEM images reveal micron size polyhedral shaped KBiO(3) particles and rod-like or prismatic shape particles for LiBiO(3). The band gap is calculated from the diffuse reflectance spectrum and is found to be 2.1 eV and 1.8 eV for KBiO(3) and LiBiO(3), respectively. The band gap and the crystal structure data suggest that these materials can be used as photocatalysts. The photocatalytic activity of KBiO(3) and LiBiO(3) are evaluated for the degradation of anionic and cationic dyes, respectively, under UV and solar radiations.