Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes


Autoria(s): Roul, Basanta; Rajpalke, Mohana K; Bhat, Thirumaleshwara N; Kumar, Mahesh; Sinha, Neeraj; Kalghatgi, AT; Krupanidhi, SB
Data(s)

15/02/2011

Resumo

InN/GaN heterostructure based Schottky diodes were fabricated by plasma-assisted molecular beam epitaxy. The temperature dependent electrical transport properties were carried out for InN/GaN heterostructure. The barrier height and the ideality factor of the Schottky diodes were found to be temperature dependent. The temperature dependence of the barrier height indicates that the Schottky barrier height is inhomogeneous in nature at the heterostructure interface. The higher value of the ideality factor and its temperature dependence suggest that the current transport is primarily dominated by thermionic field emission (TFE) other than thermionic emission (TE). The room temperature barrier height obtained by using TE and TFE models were 1.08 and 1.43 eV, respectively. (C) 2011 American Institute of Physics. doi: 10.1063/1.3549685]

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/36195/1/Temperature.pdf

Roul, Basanta and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kumar, Mahesh and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes. In: Journal of Applied Physics, 109 (4).

Publicador

American Institute of Physics

Relação

http://jap.aip.org/resource/1/japiau/v109/i4/p044502_s1

http://eprints.iisc.ernet.in/36195/

Palavras-Chave #Materials Research Centre
Tipo

Journal Article

PeerReviewed