Campagne Chalci 78-01 (30/01/78 - 12/02/78): résultats des chalutages

The aim of this campaign was the trawl exploration of the Ivoirian continental shelf at the depth of 10 to 120 metres.

Campagnes Chalci, Chalci 84-01 (du 17 au 25-01-84) et Chalci 84-02 (du 03 au 11-07-84): resultats des chalutages

This publication gives the results of bottom trawlings made during the cruises CHALCI 84-01 and CHALCI 84-02 by the oceanographic research vessel "Andre NIZERY" sur le plateau continental ivoirien.

Campagnes Chalci, Chalci 83-01 (du 11 au 19-01-83) et Chalci 83-02 (du 10 au 18-03-83): resultats des chalutages

This publication gives the results of bottom trawlings made during the cruises Chalci 83.01 and Chalci 83.02 by the oceanographic research vessel "André Nizery", on the ivorian continental shelf. The publication content is: - an introduction explaining the form of results; the trawl recording cards with the characteristics of trawl and the detail of catches by species; the length frequency distributions of the measured samples.

Report of the MPA exposure visit to Malaysia, 29 March-02 April, 2015

The main objective of the visit was to share the success of Marine Protected Area (MPA) management in Malaysia with Bangladeshi counterparts, representatives of donor organizations, NGOs and researchers.

栖热菌属高温菌RH99-02菌株产类胡萝卜素的研究

从腾冲热海分离到最高生长温度达80℃的一株嗜热非芽孢菌RH99-02菌株，经鉴定属Thermus属，对其所产类胡萝卜素进行了吸收光谱扫描及薄层层析分析。发酵研究表明振荡培养时的菌体生物量和色素产量上均高于静置培养，培养至50h菌体生物量和色素产量达到最大值，菌体色素产量为762μg/g干重。

微囊藻毒素LR诱导L-02细胞发生凋亡

目的了解微囊藻毒素(MC)LR对L-02细胞的毒性机制。方法以L-02细胞为材料,用不同浓度的MCLR处理该细胞,观察了细胞增殖能力、细胞形态改变、乳酸脱氢酶(LDH)泄漏、细胞凋亡率及凋亡相关基因等一系列指标的变化。结果 MTT细胞增殖实验可知,MCLR在24 h内对L-02细胞有轻微的抑制作用,随后却促进细胞增殖。48 h处理对 LDH泄漏没有显著影响,延时处理导致LDH泄漏发生,且MCLR浓度越高,LDH泄漏越严重,此结果显示发生了细胞氧化损伤。光镜下50μg/ml的毒素浓度在60 h处理后可造成明

有机磷农药在水生态系中生物净化机理研究——2.CTP-02降解对硝基酚的特性和动力学

从鸭儿湖氧化塘中分离出具有分解对硝基酚能力的细菌Pseudomonas sp.,代号CTP-02。在实验室条件下,细菌培养物降解对硝基酚的速度与时间之间的动力学方程为dc/dt=-K_1t-K_2,细菌降解对硝基酚的最适温度为35℃,最适pH为7.5。CTP-02菌降解对硝基酚过程中首先发生脱硝基作用。

Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser

Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the electronic structures of the Gamma-conduction and L-conduction subbands of GeSn/GeSiSn strained quantum well structure with an arbitrary composition. Our theoretical model suggests that the band structure could be widely modified to be type I, negative-gap or indirect-gap type II quantum well by changing the mole fraction of alpha-Sn and Si in the well and barrier layers, respectively. The optical gain spectrum in the type I quantum well system is calculated, taking into account the electrons leakage from the Gamma-valley to L-valley of the conduction band. We found that by increasing the mole fraction of alpha-Sn in the barrier layer and not in the well layer, an increase in the tensile strain effect can significantly enhance the transition probability, and a decrease in Si composition in the barrier layer, which lowers the band edge of Gamma-conduction subbands, also comes to a larger optical gain.