Single‐gate deep level transient spectroscopy technique

A new deep level transient spectroscopy technique is suggested which allows the deep level parameters to be obtained from a single temperature scan. Using large ratio t2/t1 of the measurement gate positions t1 and t2 and analyzing the steep high‐temperature side of the peak, it is demonstrated that the deep level activation energy can be determined with high accuracy.

Hermite expansions on R(N) for radial functions

It is proved that the Riesz means S(R)(delta)f, delta > 0, for the Hermite expansions on R(n), n greater-than-or-equal-to 2, satisfy the uniform estimates \\S(R)(delta)f\\p less-than-or-equal-to C \\f\\p for all radial functions if and only if p lies in the interval 2n/(n + 1 + 2delta) < p < 2n/(n - 1 - 2delta).

Analogues of the Wiener-Tauberian and Schwartz theorems for radial functions on symmetric spaces

We prove a Wiener Tauberian theorem for the L-1 spherical functions on a semisimple Lie group of arbitrary real rank. We also establish a Schwartz-type theorem for complex groups. As a corollary we obtain a Wiener Tauberian type result for compactly supported distributions.

Evidence of gate-tunable topological excitations in two-dimensional electron systems

We report experimental observations of a new mechanism of charge transport in two-dimensional electron systems (2DESs) in the presence of strong Coulomb interaction and disorder. We show that at low enough temperature the conductivity tends to zero at a nonzero carrier density, which represents the point of essential singularity in a Berezinskii-Kosterlitz-Thouless-like transition. Our experiments with many 2DESs in GaAs/AlGaAs heterostructures suggest that the charge transport at low carrier densities is due to the melting of an underlying ordered ground state through proliferation of topological defects. Independent measurement of low-frequency conductivity noise supports this scenario.

Quantum Threshold Voltage Modeling of Short Channel Quad Gate Silicon Nanowire Transistor

In this paper, a physically based analytical quantum linear threshold voltage model for short channel quad gate MOSFETs is developed. The proposed model, which is suitable for circuit simulation, is based on the analytical solution of 3-D Poisson and 2-D Schrodinger equation. Proposed model is fully validated against the professional numerical device simulator for a wide range of device geometries and also used to analyze the effect of geometry variation on the threshold voltage.

Consolidation behavior of clayey soils under radial drainage

For Barren's degree of consolidation, U-r, versus the time factor, T-r, relationship for soils undergoing consolidation with radial drainage for the equal vertical strain condition, a simple method has been developed to determine the value of the coefficient of consolidation with radial drainage c(r). Theoretical log(10)(d(e)(2)/t) versus U-r curves where d(e) is the diameter of influence and r is the real time for the different known value of c(r) have been generated. A method has been developed wherein both the theoretical and experimental behaviors of soils undergoing consolidation with radial drainage can be simultaneously compared and studied on the same plot. The experimental log(10)(d(e)(2)/t) versus U-r curves have been compared with the theoretical curves. Effects of initial compression, secondary compression, and duration of load increment are studied. Simple procedures are presented for calculating the values of c(r) using the experimental log(10)(d(e)(2)/t) versus U-r curves. A comparative study of the coefficient of consolidation and the coefficient of permeability between the cases of vertical and radial drainage has been done.

Implementation of conditional phase-shift gate for quantum information processing by NMR, using transition-selective pulses

Experimental realization of quantum information processing in the field of nuclear magnetic resonance (NMR) has been well established. Implementation of conditional phase-shift gate has been a significant step, which has lead to realization of important algorithms such as Grover's search algorithm and quantum Fourier transform. This gate has so far been implemented in NMR by using coupling evolution method. We demonstrate here the implementation of the conditional phase-shift gate using transition selective pulses. As an application of the gate, we demonstrate Grover's search algorithm and quantum Fourier transform by simulations and experiments using transition selective pulses. (C) 2002 Elsevier Science (USA). All rights reserved.

Voltage and Temperature Scalable Gate Delay and Slew Models Including Intra-Gate Variations

We investigate the feasibility of developing a comprehensive gate delay and slew models which incorporates output load, input edge slew, supply voltage, temperature, global process variations and local process variations all in the same model. We find that the standard polynomial models cannot handle such a large heterogeneous set of input variables. We instead use neural networks, which are well known for their ability to approximate any arbitrary continuous function. Our initial experiments with a small subset of standard cell gates of an industrial 65 nm library show promising results with error in mean less than 1%, error in standard deviation less than 3% and maximum error less than 11% as compared to SPICE for models covering 0.9- 1.1 V of supply, -40degC to 125degC of temperature, load, slew and global and local process parameters. Enhancing the conventional libraries to be voltage and temperature scalable with similar accuracy requires on an average 4x more SPICE characterization runs.

Voltage and Temperature Scalable Gate Delay and Slew Models Including Intra-Gate Variations

We investigate the feasibility of developing a comprehensive gate delay and slew models which incorporates output load, input edge slew, supply voltage, temperature, global process variations and local process variations all in the same model. We find that the standard polynomial models cannot handle such a large heterogeneous set of input variables. We instead use neural networks, which are well known for their ability to approximate any arbitrary continuous function. Our initial experiments with a small subset of standard cell gates of an industrial 65 nm library show promising results with error in mean less than 1%, error in standard deviation less than 3% and maximum error less than 11% as compared to SPICE for models covering 0.9- 1.1 V of supply, -40degC to 125degC of temperature, load, slew and global and local process parameters. Enhancing the conventional libraries to be voltage and temperature scalable with similar accuracy requires on an average 4x more SPICE characterization runs.

A Simulation Based Study and Analysis of Double Gate Tunnel FET Performance for Low Stand-By Power Applications

The conventional metal oxide semiconductor field effect transistor (MOSFET)may not be suitable for future low standby power (LSTP) applications due to its high off-state current as the sub-threshold swing is theoretically limited to 60mV/decade. Tunnel field effect transistor (TFET) based on gate controlled band to band tunneling has attracted attention for such applications due to its extremely small sub-threshold swing (much less than 60mV/decade). This paper takes a simulation approach to gain some insight into its electrostatics and the carrier transport mechanism. Using 2D device simulations, a thorough study and analysis of the electrical parameters of the planar double gate TFET is performed. Due to excellent sub-threshold characteristics and a reverse biased structure, it offers orders of magnitude less leakage current compared to the conventional MOSFET. In this work, it is shown that the device can be scaled down to channel lengths as small as 30 nm without affecting its performance. Also, it is observed that the bulk region of the device plays a major role in determining the sub-threshold characteristics of the device and considerable improvement in performance (in terms of ION/IOFF ratio) can be achieved if the thickness of the device is reduced. An ION/IOFF ratio of 2x1012 and a minimum point sub-threshold swing of 22mV/decade is obtained.

On the cut‐on frequencies of a large round duct with azimuthal as well as radial partitions

This letter deals with a three‐dimensional analysis of circular sectors and annular segments resulting from the partitioning of a round (cylindrical) duct for use in an active noise control system. The relevant frequency equations are derived for stationary medium and solved numerically to arrive at the cut‐on frequencies of the first few modes. The resultant table indicates among other things that azimuthal partitioning does not raise the cutoff frequency (the smallest cut‐on frequency) beyond a particular value, and that radial partitioning is counterproductive in that respect.