Experimental analysis of a separation control device based on plasma technology

In this thesis effects of plasma actuators based on Dielectric Barrier Discharge (DBD) technology over a NACA 0015 bidimensional airfoil have been analyzed in an experimental way, at low Reynolds number. Work developed on thesis has been carried on in partnership with the Department of Electrical Engineering of Università di Bologna, inside Wind Tunnel of the Applied Aerodynamic Laboratory of Aerospace Engineering faculty. In order to verify the effectiveness of these active control devices, the analysis has shown how actuators succeed in prevent boundary layer separation only in certain conditions af angle of attack and Reynolds numbers. Moreover, in this thesis actuators’ chordwise position effect has been also analyzed, together with the influence of steady and unsteady operations.

Development and performance assessment of a Plasma Focus electron beam generator for Intra-Operative Radiation Therapy

The Plasma Focus is a device designed to generate a plasma sheet between two coaxial electrodes by means of a high voltage difference. The plasma is then driven to collapse into a “pinch”, where thermonuclear conditions prevail. During the “pinch phase” charged particles are emitted, with two main components: an ion beam peaked forward and an electron beam directed backward. The electron beam emitted backward by Plasma Focus devices is being investigated as a radiation source for medical applications, using it to produce x-rays by interaction with appropriate targets (through bremsstrahlung and characteristic emission). A dedicated Plasma Focus device, named PFMA-3 (Plasma Focus for Medical Applications number 3), has been designed, put in operation and tested by the research groups of the Universities of Bologna and Ferrara. The very high dose rate (several gray per discharge, in less than 1 µs) is a peculiarity of this device that has to be investigated, as it might modify the relative biological effectiveness (RBE). Aim of this Ph.D. project was to investigate the main physical properties of the low-energy x-ray beams produced by a Plasma Focus device and their potential medical applications to IORT treatments. It was necessary to develop the optimal geometrical configuration; to evaluate the x-rays produced and their dose deposited; to estimate the energy electron spectrum produced in the “pinch phase”; to study an optimal target for the conversion of the x-rays; to conduct simulations to study the physics involved; and in order to evaluate the radio-biological features of the beam, cell holders had to be developed for both irradiations and cell growth conditions.

Chemical exfoliation of graphene and its application in organic electronics and energy storage devices

Graphene, the thinnest two-dimensional material possible, is considered as a realistic candidate for the numerous applications in electronic, energy storage and conversion devices due to its unique properties, such as high optical transmittance, high conductivity, excellent chemical and thermal stability. However, the electronic and chemical properties of graphene are highly dependent on their preparation methods. Therefore, the development of novel chemical exfoliation process which aims at high yield synthesis of high quality graphene while maintaining good solution processability is of great concern. This thesis focuses on the solution production of high-quality graphene by wet-chemical exfoliation methods and addresses the applications of the chemically exfoliated graphene in organic electronics and energy storage devices.rnPlatinum is the most commonly used catalysts for fuel cells but they suffered from sluggish electron transfer kinetics. On the other hand, heteroatom doped graphene is known to enhance not only electrical conductivity but also long term operation stability. In this regard, a simple synthetic method is developed for the nitrogen doped graphene (NG) preparation. Moreover, iron (Fe) can be incorporated into the synthetic process. As-prepared NG with and without Fe shows excellent catalytic activity and stability compared to that of Pt based catalysts.rnHigh electrical conductivity is one of the most important requirements for the application of graphene in electronic devices. Therefore, for the fabrication of electrically conductive graphene films, a novel methane plasma assisted reduction of GO is developed. The high electrical conductivity of plasma reduced GO films revealed an excellent electrochemical performance in terms of high power and energy densities when used as an electrode in the micro-supercapacitors.rnAlthough, GO can be prepared in bulk scale, large amount of defect density and low electrical conductivity are major drawbacks. To overcome the intrinsic limitation of poor quality of GO and/or reduced GO, a novel protocol is extablished for mass production of high-quality graphene by means of electrochemical exfoliation of graphite. The prepared graphene shows high electrical conductivity, low defect density and good solution processability. Furthermore, when used as electrodes in organic field-effect transistors and/or in supercapacitors, the electrochemically exfoliated graphene shows excellent device performances. The low cost and environment friendly production of such high-quality graphene is of great importance for future generation electronics and energy storage devices. rn

Electron transport in E x B devices

A Hall thruster, an E × B device used for in-space propulsion, utilizes an axial electric field to electrostatically accelerate plasma propellant from the spacecraft. The axial electric field is created by positively biasing the anode so that the positivelycharged ions may be accelerated (repelled) from the thruster, which produces thrust. However, plasma electrons are much smaller than ions and may be accelerated much more quickly toward the anode; if electrons were not impeded, a "short circuit" due to the electron flow would eliminate the thrust mechanism. Therefore, a magnetic field serves to "magnetize" plasma electrons internal to the thruster and confines them in gyro-orbits within the discharge channel. Without outside factors electrons would be confined indefinitely; however, electron-neutral collisions provide a mechanism to free electrons from their orbits allowing electrons to cross the magnetic field toward the anode, where this process is described by classical transport theory. To make matters worse, cross-field electron transport has been observed to be 100-1000 times that predicted by classical collisional theory, providing an efficiency loss mechanism and an obstacle for modeling and simulations in Hall thrusters. The main difficulty in studying electron transport in Hall thrusters is the coupling that exists between the plasma and the fields, where the plasma creates and yet is influenced by the electric field. A device has been constructed at MTU’s Isp Lab, the Hall Electron Mobility Gage, which was designed specifically to study electron transport in E × B devices, where the coupling between the plasma and electric field was virtually eliminated. In this device the two most cited contributors to electron transport in Hall thrusters, fluctuation-induced transport, and wall effects, were absent. Removing the dielectric walls and plasma fluctuations, while maintaining the field environment in vacuum, has allowed the study of electron dynamics in Hall thruster fields where the electrons behave as test particles in prescribed fields, greatly simplifying the environment. Therefore, it was possible to observe any effects on transport not linked to the cited mechanisms, and it was possible to observe trends of the enhanced mobility with control parameters of electric and magnetic fields and neutral density– parameters that are not independently variable in a Hall thruster. The result of the investigation was the observation of electron transport that was ~ 20-100 times the classical prediction. The cross-field electron transport in the Mobility Gage was generally lower than that found in a Hall thruster so these findings do not negate the possibility of fluctuations and/or wall collisions contributing to transport in a Hall thruster. However, this research led to the observation of enhanced cross-field transport that had not been previously isolated in Hall thruster fields, which is not reliant on momentum-transfer collisions, wall collisions or fluctuations.

Laser Thomson scattering measurements of electron temperature and density in a Hall-effect plasma

Hall-effect thrusters (HETs) are compact electric propulsion devices with high specific impulse used for a variety of space propulsion applications. HET technology is well developed but the electron properties in the discharge are not completely understood, mainly due to the difficulty involved in performing accurate measurements in the discharge. Measurements of electron temperature and density have been performed using electrostatic probes, but presence of the probes can significantly disrupt thruster operation, and thus alter the electron temperature and density. While fast-probe studies have expanded understanding of HET discharges, a non-invasive method of measuring the electron temperature and density in the plasma is highly desirable. An alternative to electrostatic probes is a non-perturbing laser diagnostic technique that measures Thomson scattering from the plasma. Thomson scattering is the process by which photons are elastically scattered from the free electrons in a plasma. Since the electrons have thermal energy their motion causes a Doppler shift in the scattered photons that is proportional to their velocity. Like electrostatic probes, laser Thomson scattering (LTS) can be used to determine the temperature and density of free electrons in the plasma. Since Thomson scattering measures the electron velocity distribution function directly no assumptions of the plasma conditions are required, allowing accurate measurements in anisotropic and non-Maxwellian plasmas. LTS requires a complicated measurement apparatus, but has the potential to provide accurate, non-perturbing measurements of electron temperature and density in HET discharges. In order to assess the feasibility of LTS diagnostics on HETs non-invasive measurements of electron temperature and density in the near-field plume of a Hall thruster were performed using a custom built laser Thomson scattering diagnostic. Laser measurements were processed using a maximum likelihood estimation method and results were compared to conventional electrostatic double probe measurements performed at the same thruster conditions. Electron temperature was found to range from approximately 1 – 40 eV and density ranged from approximately 1.0 x 1017 m-3 to 1.3 x 1018 m-3 over discharge voltages from 250 to 450 V and mass flow rates of 40 to 80 SCCM using xenon propellant.

Alleviation of chronic venous leg ulcers with a hand-held dielectric barrier discharge plasma generator (PlasmaDerm(®) VU-2010): results of a monocentric, two-armed, open, prospective, randomized and controlled trial (NCT01415622).

BACKGROUND Cold atmospheric plasma (CAP, i.e. ionized air) is an innovating promising tool in reducing bacteria. OBJECTIVE We conducted the first clinical trial with the novel PlasmaDerm(®) VU-2010 device to assess safety and, as secondary endpoints, efficacy and applicability of 45 s/cm(2) cold atmospheric plasma as add-on therapy against chronic venous leg ulcers. METHODS From April 2011 to April 2012, 14 patients were randomized to receive standardized modern wound care (n = 7) or plasma in addition to standard care (n = 7) 3× per week for 8 weeks. The ulcer size was determined weekly (Visitrak(®) , photodocumentation). Bacterial load (bacterial swabs, contact agar plates) and pain during and between treatments (visual analogue scales) were assessed. Patients and doctors rated the applicability of plasma (questionnaires). RESULTS The plasma treatment was safe with 2 SAEs and 77 AEs approximately equally distributed among both groups (P = 0.77 and P = 1.0, Fisher's exact test). Two AEs probably related to plasma. Plasma treatment resulted in a significant reduction in lesional bacterial load (P = 0.04, Wilcoxon signed-rank test). A more than 50% ulcer size reduction was noted in 5/7 and 4/7 patients in the standard and plasma groups, respectively, and a greater size reduction occurred in the plasma group (plasma -5.3 cm(2) , standard: -3.4 cm(2) ) (non-significant, P = 0.42, log-rank test). The only ulcer that closed after 7 weeks received plasma. Patients in the plasma group quoted less pain compared to the control group. The plasma applicability was not rated inferior to standard wound care (P = 0.94, Wilcoxon-Mann-Whitney test). Physicians would recommend (P = 0.06, Wilcoxon-Mann-Whitney test) or repeat (P = 0.08, Wilcoxon-Mann-Whitney test) plasma treatment by trend. CONCLUSION Cold atmospheric plasma displays favourable antibacterial effects. We demonstrated that plasma treatment with the PlasmaDerm(®) VU-2010 device is safe and effective in patients with chronic venous leg ulcers. Thus, larger controlled trials and the development of devices with larger application surfaces are warranted.

Impact of N2 plasma power and duration on AlGaN/GaN HEMT

urface treatments have been recently shown to play an active role in electrical characteristics in AlGaN/GaN HEMTs, in particular during the passivation processing [1-4]. However, the responsible mechanisms are partially unknown and further studies are demanding. The effects of power and time N2 plasma pre-treatment prior to SiN deposition using PE-CVD (plasma enhanced chemical vapour deposition) on GaN and AlGaN/GaN HEMT have been investigated. The low power (60 W) plasma pre-treatment was found to improve the electronic characteristics in GaN based HEMT devices, independently of the time duration up to 20 min. In contrast, high power (150 and 210 W) plasma pretreatment showed detrimental effects in the electronic properties (Fig. 1), increasing the sheet resistance of the 2DEG, decreasing the 2DEG charge density in AlGaN/GaN HEMTs, transconductance reduction and decreasing the fT and fmax values up to 40% respect to the case using 60 W N2 plasma power. Although AFM (atomic force microscopy) results showed AlGaN and GaN surface roughness is not strongly affected by the N2-plasma, KFM (Kelvin force microscopy) surface analysis shows significant changes in the surface potential, trending to increase its values as the plasma power is higher. The whole results point at energetic ions inducing polarization-charge changes that affect dramatically to the 2-DEG charge density and the final characteristics of the HEMT devices. Therefore, we conclude that AlGaN surface is strongly sensitive to N2 plasma power conditions, which turn to be a key factor to achieve a good surface preparation prior to SiN passivation.

On a mathematical model arising in MHD perturbed equilibrium for Stellarator devices. A numerical approach.

Abstract?We consider a mathematical model related to the stationary regime of a plasma of fusion nuclear, magnetically confined in a Stellarator device. Using the geometric properties of the fusion device, a suitable system of coordinates and averaging methods, the mathematical problem may be reduced to a two dimensional free boundary problem of nonlocal type, where the corresponding differential equation is of the Grad?Shafranov type. The current balance within each flux magnetic gives us the possibility to define the third covariant magnetic field component with respect to the averaged poloidal flux function. We present here some numerical experiences and we give some numerical approach for the averaged poloidal flux and for the third covariant magnetic field component.

Impact of N2 plasma power discharge on AlGaN/GaN HEMT performance

The effects of power and time conditions of in situ N2 plasma treatment, prior to silicon nitride (SiN) passivation, were investigated on an AlGaN/GaN high-electron mobility transistor (HEMT). These studies reveal that N2 plasma power is a critical parameter to control the SiN/AlGaN interface quality, which directly affects the 2-D electron gas density. Significant enhancement in the HEMT characteristics was observed by using a low power N2 plasma pretreatment. In contrast, a marked gradual reduction in the maximum drain-source current density (IDS max) and maximum transconductance (gm max), as well as in fT and fmax, was observed as the N2 plasma power increases (up to 40% decrease for 210 W). Different mechanisms were proposed to be dominant as a function of the discharge power range. A good correlation was observed between the device electrical characteristics and the surface assessment by atomic force microscopy and Kelvin force microscopy techniques.

Technology and characterization of GaN-HEMTs devices: high temperature and trapping effects

Los transistores de alta movilidad electrónica basados en GaN han sido objeto de una extensa investigación ya que tanto el GaN como sus aleaciones presentan unas excelentes propiedades eléctricas (alta movilidad, elevada concentración de portadores y campo eléctrico crítico alto). Aunque recientemente se han incluido en algunas aplicaciones comerciales, su expansión en el mercado está condicionada a la mejora de varios asuntos relacionados con su rendimiento y habilidad. Durante esta tesis se han abordado algunos de estos aspectos relevantes; por ejemplo, la fabricación de enhancement mode HEMTs, su funcionamiento a alta temperatura, el auto calentamiento y el atrapamiento de carga. Los HEMTs normalmente apagado o enhancement mode han atraído la atención de la comunidad científica dedicada al desarrollo de circuitos amplificadores y conmutadores de potencia, ya que su utilización disminuiría significativamente el consumo de potencia; además de requerir solamente una tensión de alimentación negativa, y reducir la complejidad del circuito y su coste. Durante esta tesis se han evaluado varias técnicas utilizadas para la fabricación de estos dispositivos: el ataque húmedo para conseguir el gate-recess en heterostructuras de InAl(Ga)N/GaN; y tratamientos basados en flúor (plasma CF4 e implantación de F) de la zona debajo de la puerta. Se han llevado a cabo ataques húmedos en heteroestructuras de InAl(Ga)N crecidas sobre sustratos de Si, SiC y zafiro. El ataque completo de la barrera se consiguió únicamente en las muestras con sustrato de Si. Por lo tanto, se puede deducir que la velocidad de ataque depende de la densidad de dislocaciones presentes en la estructura, ya que el Si presenta un peor ajuste del parámetro de red con el GaN. En relación a los tratamientos basados en flúor, se ha comprobado que es necesario realizar un recocido térmico después de la fabricación de la puerta para recuperar la heteroestructura de los daños causados durante dichos tratamientos. Además, el estudio de la evolución de la tensión umbral con el tiempo de recocido ha demostrado que en los HEMTs tratados con plasma ésta tiende a valores más negativos al aumentar el tiempo de recocido. Por el contrario, la tensión umbral de los HEMTs implantados se desplaza hacia valores más positivos, lo cual se atribuye a la introducción de iones de flúor a niveles más profundos de la heterostructura. Los transistores fabricados con plasma presentaron mejor funcionamiento en DC a temperatura ambiente que los implantados. Su estudio a alta temperatura ha revelado una reducción del funcionamiento de todos los dispositivos con la temperatura. Los valores iniciales de corriente de drenador y de transconductancia medidos a temperatura ambiente se recuperaron después del ciclo térmico, por lo que se deduce que dichos efectos térmicos son reversibles. Se han estudiado varios aspectos relacionados con el funcionamiento de los HEMTs a diferentes temperaturas. En primer lugar, se han evaluado las prestaciones de dispositivos de AlGaN/GaN sobre sustrato de Si con diferentes caps: GaN, in situ SiN e in situ SiN/GaN, desde 25 K hasta 550 K. Los transistores con in situ SiN presentaron los valores más altos de corriente drenador, transconductancia, y los valores más bajos de resistencia-ON, así como las mejores características en corte. Además, se ha confirmado que dichos dispositivos presentan gran robustez frente al estrés térmico. En segundo lugar, se ha estudiado el funcionamiento de transistores de InAlN/GaN con diferentes diseños y geometrías. Dichos dispositivos presentaron una reducción casi lineal de los parámetros en DC en el rango de temperaturas de 25°C hasta 225°C. Esto se debe principalmente a la dependencia térmica de la movilidad electrónica, y también a la reducción de la drift velocity con la temperatura. Además, los transistores con mayores longitudes de puerta mostraron una mayor reducción de su funcionamiento, lo cual se atribuye a que la drift velocity disminuye más considerablemente con la temperatura cuando el campo eléctrico es pequeño. De manera similar, al aumentar la distancia entre la puerta y el drenador, el funcionamiento del HEMT presentó una mayor reducción con la temperatura. Por lo tanto, se puede deducir que la degradación del funcionamiento de los HEMTs causada por el aumento de la temperatura depende tanto de la longitud de la puerta como de la distancia entre la puerta y el drenador. Por otra parte, la alta densidad de potencia generada en la región activa de estos transistores conlleva el auto calentamiento de los mismos por efecto Joule, lo cual puede degradar su funcionamiento y Habilidad. Durante esta tesis se ha desarrollado un simple método para la determinación de la temperatura del canal basado en medidas eléctricas. La aplicación de dicha técnica junto con la realización de simulaciones electrotérmicas han posibilitado el estudio de varios aspectos relacionados con el autocalentamiento. Por ejemplo, se han evaluado sus efectos en dispositivos sobre Si, SiC, y zafiro. Los transistores sobre SiC han mostrado menores efectos gracias a la mayor conductividad térmica del SiC, lo cual confirma el papel clave que desempeña el sustrato en el autocalentamiento. Se ha observado que la geometría del dispositivo tiene cierta influencia en dichos efectos, destacando que la distribución del calor generado en la zona del canal depende de la distancia entre la puerta y el drenador. Además, se ha demostrado que la temperatura ambiente tiene un considerable impacto en el autocalentamiento, lo que se atribuye principalmente a la dependencia térmica de la conductividad térmica de las capas y sustrato que forman la heterostructura. Por último, se han realizado numerosas medidas en pulsado para estudiar el atrapamiento de carga en HEMTs sobre sustratos de SiC con barreras de AlGaN y de InAlN. Los resultados obtenidos en los transistores con barrera de AlGaN han presentado una disminución de la corriente de drenador y de la transconductancia sin mostrar un cambio en la tensión umbral. Por lo tanto, se puede deducir que la posible localización de las trampas es la región de acceso entre la puerta y el drenador. Por el contrario, la reducción de la corriente de drenador observada en los dispositivos con barrera de InAlN llevaba asociado un cambio significativo en la tensión umbral, lo que implica la existencia de trampas situadas en la zona debajo de la puerta. Además, el significativo aumento del valor de la resistencia-ON y la degradación de la transconductancia revelan la presencia de trampas en la zona de acceso entre la puerta y el drenador. La evaluación de los efectos del atrapamiento de carga en dispositivos con diferentes geometrías ha demostrado que dichos efectos son menos notables en aquellos transistores con mayor longitud de puerta o mayor distancia entre puerta y drenador. Esta dependencia con la geometría se puede explicar considerando que la longitud y densidad de trampas de la puerta virtual son independientes de las dimensiones del dispositivo. Finalmente se puede deducir que para conseguir el diseño óptimo durante la fase de diseño no sólo hay que tener en cuenta la aplicación final sino también la influencia que tiene la geometría en los diferentes aspectos estudiados (funcionamiento a alta temperatura, autocalentamiento, y atrapamiento de carga). ABSTRACT GaN-based high electron mobility transistors have been under extensive research due to the excellent electrical properties of GaN and its related alloys (high carrier concentration, high mobility, and high critical electric field). Although these devices have been recently included in commercial applications, some performance and reliability issues need to be addressed for their expansion in the market. Some of these relevant aspects have been studied during this thesis; for instance, the fabrication of enhancement mode HEMTs, the device performance at high temperature, the self-heating and the charge trapping. Enhancement mode HEMTs have become more attractive mainly because their use leads to a significant reduction of the power consumption during the stand-by state. Moreover, they enable the fabrication of simpler power amplifier circuits and high-power switches because they allow the elimination of negativepolarity voltage supply, reducing significantly the circuit complexity and system cost. In this thesis, different techniques for the fabrication of these devices have been assessed: wet-etching for achieving the gate-recess in InAl(Ga)N/GaN devices and two different fluorine-based treatments (CF4 plasma and F implantation). Regarding the wet-etching, experiments have been carried out in InAl(Ga)N/GaN grown on different substrates: Si, sapphire, and SiC. The total recess of the barrier was achieved after 3 min of etching in devices grown on Si substrate. This suggests that the etch rate can critically depend on the dislocations present in the structure, since the Si exhibits the highest mismatch to GaN. Concerning the fluorine-based treatments, a post-gate thermal annealing was required to recover the damages caused to the structure during the fluorine-treatments. The study of the threshold voltage as a function of this annealing time has revealed that in the case of the plasma-treated devices it become more negative with the time increase. On the contrary, the threshold voltage of implanted HEMTs showed a positive shift when the annealing time was increased, which is attributed to the deep F implantation profile. Plasma-treated HEMTs have exhibited better DC performance at room temperature than the implanted devices. Their study at high temperature has revealed that their performance decreases with temperature. The initial performance measured at room temperature was recovered after the thermal cycle regardless of the fluorine treatment; therefore, the thermal effects were reversible. Thermal issues related to the device performance at different temperature have been addressed. Firstly, AlGaN/GaN HEMTs grown on Si substrate with different cap layers: GaN, in situ SiN, or in situ SiN/GaN, have been assessed from 25 K to 550 K. In situ SiN cap layer has been demonstrated to improve the device performance since HEMTs with this cap layer have exhibited the highest drain current and transconductance values, the lowest on-resistance, as well as the best off-state characteristics. Moreover, the evaluation of thermal stress impact on the device performance has confirmed the robustness of devices with in situ cap. Secondly, the high temperature performance of InAlN/GaN HEMTs with different layouts and geometries have been assessed. The devices under study have exhibited an almost linear reduction of the main DC parameters operating in a temperature range from room temperature to 225°C. This was mainly due to the thermal dependence of the electron mobility, and secondly to the drift velocity decrease with temperature. Moreover, HEMTs with large gate length values have exhibited a great reduction of the device performance. This was attributed to the greater decrease of the drift velocity for low electric fields. Similarly, the increase of the gate-to-drain distance led to a greater reduction of drain current and transconductance values. Therefore, this thermal performance degradation has been found to be dependent on both the gate length and the gate-to-drain distance. It was observed that the very high power density in the active region of these transistors leads to Joule self-heating, resulting in an increase of the device temperature, which can degrade the device performance and reliability. A simple electrical method have been developed during this work to determine the channel temperature. Furthermore, the application of this technique together with the performance of electro-thermal simulations have enabled the evaluation of different aspects related to the self-heating. For instance, the influence of the substrate have been confirmed by the study of devices grown on Si, SiC, and Sapphire. HEMTs grown on SiC substrate have been confirmed to exhibit the lowest self-heating effects thanks to its highest thermal conductivity. In addition to this, the distribution of the generated heat in the channel has been demonstrated to be dependent on the gate-to-drain distance. Besides the substrate and the geometry of the device, the ambient temperature has also been found to be relevant for the self-heating effects, mainly due to the temperature-dependent thermal conductivity of the layers and the substrate. Trapping effects have been evaluated by means of pulsed measurements in AlGaN and InAIN barrier devices. AlGaN barrier HEMTs have exhibited a de crease in drain current and transconductance without measurable threshold voltage change, suggesting the location of the traps in the gate-to-drain access region. On the contrary, InAIN barrier devices have showed a drain current associated with a positive shift of threshold voltage, which indicated that the traps were possibly located under the gate region. Moreover, a significant increase of the ON-resistance as well as a transconductance reduction were observed, revealing the presence of traps on the gate-drain access region. On the other hand, the assessment of devices with different geometries have demonstrated that the trapping effects are more noticeable in devices with either short gate length or the gate-to-drain distance. This can be attributed to the fact that the length and the trap density of the virtual gate are independent on the device geometry. Finally, it can be deduced that besides the final application requirements, the influence of the device geometry on the performance at high temperature, on the self-heating, as well as on the trapping effects need to be taken into account during the device design stage to achieve the optimal layout.

Investigation of an optically reconfigurable plasma for silicon based microwave applications

This paper investigates the use of photoconductive plasmas for controlling microwave circuits and antennas on semiconductor substrates. Initial experiments show that significant changes in the reflection coefficient characteristics can be obtained by varying the length of a photo-illuminated plasma region from 0 to 2mm. The resulting structure forms the basis for further experiments involving tuneable microwave devices. © 2013 European Microwave Association.

Influência da superfície do titânio nitretado a plasma em diferentes atmosferas na ativação de plaquetas sanguíneas

This study aimed to analyze the biological response of titanium surfaces modified by plasma Ar + N2 + H2. Titanium disks grade II received different surface treatments Ar + N2 + H2 plasma, constituting seven groups including only polished samples used as standard. Before and after treatment the samples were evaluated in terms of topography, crystal structure and wettability, using atomic force microscopy, X-ray diffraction, Raman spectroscopy and testing of the sessile drop, respectively. Rich plasma (PRP) was applied to the surfaces modified in culture plates. Images obtained by scanning electron microscopy of the adhered platelets were analyzed to verify the behavior of platelets in the different experimental conditions. We verified that the adition of H2 on plasma atmosphere resulted in more rough surfaces, with round tops. These surfaces, in contrast to that surfaces treated with high concentration of N2, are less propense to platelet aggregation and, consequently, to the formation of thrombus when applied in biomedical devices.

Microwave Plasma Assisted ALD Development for the Deposition of Gate Oxides & ALD of High-k Dielectrics

The semiconductor industry's urge towards faster, smaller and cheaper integrated circuits has lead the industry to smaller node devices. The integrated circuits that are now under volume production belong to 22 nm and 14 nm technology nodes. In 2007 the 45 nm technology came with the revolutionary high- /metal gate structure. 22 nm technology utilizes fully depleted tri-gate transistor structure. The 14 nm technology is a continuation of the 22 nm technology. Intel is using second generation tri-gate technology in 14 nm devices. After 14 nm, the semiconductor industry is expected to continue the scaling with 10 nm devices followed by 7 nm. Recently, IBM has announced successful production of 7 nm node test chips. This is the fashion how nanoelectronics industry is proceeding with its scaling trend. For the present node of technologies selective deposition and selective removal of the materials are required. Atomic layer deposition and the atomic layer etching are the respective techniques used for selective deposition and selective removal. Atomic layer deposition still remains as a futuristic manufacturing approach that deposits materials and lms in exact places. In addition to the nano/microelectronics industry, ALD is also widening its application areas and acceptance. The usage of ALD equipments in industry exhibits a diversi cation trend. With this trend, large area, batch processing, particle ALD and plasma enhanced like ALD equipments are becoming prominent in industrial applications. In this work, the development of an atomic layer deposition tool with microwave plasma capability is described, which is a ordable even for lightly funded research labs.

Análisis teórico del contacto plasma-superficie y sus aplicaciones industriales

Actualmente, la física de plasmas constituye una parte importante de la investigación en física que está siendo desarrollada. Su campo de aplicación varía desde el estudio de plasmas interestelares y cósmicos, como las estrellas, las nebulosas, el medio intergaláctico, etc.; hasta aplicaciones más terrenales como la producción de microchips o los dispositivos de iluminación. Resulta particularmente interesante el estudio del contacto de una superficie metálica con un plasma. Siendo la razón que, la dinámica de la interfase formada entre un plasma imperturbado y una superficie metálica, resulta de gran importancia cuando se trata de estudiar problemas como: la implantación iónica en una oblea de silicio, el grabado por medio de plasmas, la carga de una aeronave cuando atraviesa la ionosfera y la diagnosis de plasmas mediante sondas de Langmuir. El uso de las sondas de Langmuir está extendido a través de multitud de aplicaciones tecnológicas e industriales como método de diagnosis de plasmas. Algunas de estas aplicaciones han sido mencionadas justo en el párrafo anterior. Es más, su uso también es muy popular en la investigación en física de plasmas, por ser una de las pocas técnicas de diagnosis que proporciona información local sobre el plasma. El equipamiento donde es habitualmente implementado varía desde plasmas de laboratorio de baja temperatura hasta plasmas de fusión en dispositivos como tokamaks o stellerators. La geometría más popular de este tipo de sondas es cilíndrica, y la principal magnitud que se usa para diagnosticar el plasma es la corriente recogida por la sonda cuando se encuentra polarizada a un cierto potencial. Existe un interes especial en diagnosticar por medio de la medida de la corriente iónica recogida por la sonda, puesto que produce una perturbación muy pequeña del plasma en comparación con el uso de la corriente electrónica. Dada esta popularidad, no es de extrañar que grandes esfuerzos se hayan realizado en la consecución de un modelo teórico que explique el comportamiento de una sonda de Langmuir inmersa en un plasma. Hay que remontarse a la primera mitad del siglo XX para encontrar las primeras teorías que permiten diagnosticar parámetros del plasma mediante la medida de la corriente iónica recogida por la sonda de Langmuir. Desde entonces, las mejoras en estos modelos y el desarrollo de otros nuevos ha sido una constante en la investigación en física de plasmas. No obstante, todavía no está claro como los iones se aproximan a la superficie de la sonda. Las dos principales, a la par que opuestas, aproximaciones al problema que están ampliamente aceptadas son: la radial y la orbital; siendo el problema que ambas predicen diferentes valores para la corriente iónica. Los experimentos han arrojado resultados de acuerdo con ambas teorías, la radial y la orbital; y lo que es más importante, una transición entre ambos ha sido recientemente observada. La mayoría de los logros conseguidos a la hora de comprender como los iones caen desde el plasma hacia la superficie de la sonda, han sido llevados a cabo en el campo de la dinámica de fluidos o la teoría cinética. Por otra parte, este problema puede ser abordado mediante el uso de simulaciones de partículas. La principal ventaja de las simulaciones de partículas sobre los modelos de fluidos o cinéticos es que proporcionan mucha más información sobre los detalles microscópicos del movimiento de las partículas, además es relativamente fácil introducir interacciones complejas entre las partículas. No obstante, estas ventajas no se obtienen gratuitamente, ya que las simulaciones de partículas requieren grandísimos recursos. Por esta razón, es prácticamente obligatorio el uso de técnicas de procesamiento paralelo en este tipo de simulaciones. El vacío en el conocimiento de las sondas de Langmuir, es el que motiva nuestro trabajo. Nuestra aproximación, y el principal objetivo de este trabajo, ha sido desarrollar una simulación de partículas que nos permita estudiar el problema de una sonda de Langmuir inmersa en un plasma y que está negativamente polarizada con respecto a éste. Dicha simulación nos permitiría estudiar el comportamiento de los iones en los alrededores de una sonda cilíndrica de Langmuir, así como arrojar luz sobre la transición entre las teorías radiales y orbitales que ha sido observada experimentalmente. Justo después de esta sección introductoria, el resto de la tesis está dividido en tres partes tal y como sigue: La primera parte está dedicada a establecer los fundamentos teóricos de las sondas de Langmuir. En primer lugar, se realiza una introducción general al problema y al uso de sondas de Langmuir como método de diagnosis de plasmas. A continuación, se incluye una extensiva revisión bibliográfica sobre las diferentes teorías que proporcionan la corriente iónica recogida por una sonda. La segunda parte está dedicada a explicar los detalles de las simulaciones de partículas que han sido desarrolladas a lo largo de nuestra investigación, así como los resultados obtenidos con las mismas. Esta parte incluye una introducción sobre la teoría que subyace el tipo de simulaciones de partículas y las técnicas de paralelización que han sido usadas en nuestros códigos. El resto de esta parte está dividido en dos capítulos, cada uno de los cuales se ocupa de una de las geometrías consideradas en nuestras simulaciones (plana y cilíndrica). En esta parte discutimos también los descubrimientos realizados relativos a la transición entre el comportamiento radial y orbital de los iones en los alrededores de una sonda cilíndrica de Langmuir. Finalmente, en la tercera parte de la tesis se presenta un resumen del trabajo realizado. En este resumen, se enumeran brevemente los resultados de nuestra investigación y se han incluido algunas conclusiones. Después de esto, se enumeran una serie de perspectivas futuras y extensiones para los códigos desarrollados.