989 resultados para Oxygen partial pressure


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Purpose: To investigate the expression pattern of hypoxia-induced proteins identified as being involved in malignant progression of head-and-neck squamous cell carcinoma (HNSCC) and to determine their relationship to tumor pO 2 and prognosis. Methods and Materials: We performed immunohistochemical staining of hypoxia-induced proteins (carbonic anhydrase IX [CA IX], BNIP3L, connective tissue growth factor, osteopontin, ephrin A1, hypoxia inducible gene-2, dihydrofolate reductase, galectin-1, IκB kinase β, and lysyl oxidase) on tumor tissue arrays of 101 HNSCC patients with pretreatment pO 2 measurements. Analysis of variance and Fisher's exact tests were used to evaluate the relationship between marker expression, tumor pO 2, and CA IX staining. Cox proportional hazard model and log-rank tests were used to determine the relationship between markers and prognosis. Results: Osteopontin expression correlated with tumor pO 2 (Eppendorf measurements) (p = 0.04). However, there was a strong correlation between lysyl oxidase, ephrin A1, and galectin-1 and CA IX staining. These markers also predicted for cancer-specific survival and overall survival on univariate analysis. A hypoxia score of 0-5 was assigned to each patient, on the basis of the presence of strong staining for these markers, whereby a higher score signifies increased marker expression. On multivariate analysis, increasing hypoxia score was an independent prognostic factor for cancer-specific survival (p = 0.015) and was borderline significant for overall survival (p = 0.057) when adjusted for other independent predictors of outcomes (hemoglobin and age). Conclusions: We identified a panel of hypoxia-related tissue markers that correlates with treatment outcomes in HNSCC. Validation of these markers will be needed to determine their utility in identifying patients for hypoxia-targeted therapy. © 2007 Elsevier Inc. All rights reserved.

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The effect of a magnetic field on the flow and oxygenation of an incompressible Newtonian conducting fluid in channels with irregular boundaries has been investigated. The geometric parameter δ, which is a ratio of the mean half width of the channel d to the characteristic length λ along the channel over which the significant changes in the flow quantities occur, has been used for perturbing the governing equations. Closed form solutions of the various order equations are presented for the stream function. The equations for oxygen partial pressure remain nonlinear even after perturbation, therefore a numerical solution is presented. The expressions for shear stress at a wall and pressure distributions are derived. Here the separation in the flow occurs at a higher Reynolds number than the corresponding non-magnetic case. It is found that the magnetic field has an effect on local oxygen concentration but has a little effect on the saturation length.

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The standard Gibbs energy change accompanying the conversion of rare earth oxides to oxysulfides by reaction of rare earth oxides with diatomic sulfur gas has been measured in the temperature range 870 to 1300 K using the solid state cell: Pt/Cu+Cu2S/R2O2S+R2O3‖(CaO)ZrO2‖Ni+NiO, Pt where R=La, Nd, Sm, Gd, Tb, and Dy. The partial pressure of diatomic sulfur over a mixture of rare earth oxide (R2O3) and oxysulfide (R2O2S) is fixed by the dissociation of Cu2S to Cu in a closed system. The buffer mixture of Cu+Cu2S is physically separated from the rare earth oxide and oxysulfide to avoid complications arising from interaction between them. The corresponding equilibrium oxygen partial pressure is measured with an oxide solid electrolyte cell. Gibbs energy change for the conversion of oxide to the corresponding oxysulfide increases monotonically with atomic number of the rare earth element. Second law enthalpy of formation also shows a similar trend. Based on this empirical trend Gibbs energies of formation of oxysulfides of Pr, Eu, Ho, and Er are estimated as a function of temperature.

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Molybdenum trioxide (MoO3) has been deposited onto single-crystal p-type silicon by neutralized ion-beam sputter techniques. The results indicate that the diode behavior is a function of oxygen partial pressure during the reactive sputtering. Film thickness, deposition rate, index of refraction, resistivity, and integrated transmission have been measured under AM1 illumination. It appears that thin films of MoO3 could serve as an n-type transparent semiconductor for photovoltaic applications. Applied Physics Letters is copyrighted by The American Institute of Physics.

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Because of its high electrical conductivity and good diffusion barrier properties ruthenium dioxide (RuO2) is a good electrode material for use with ferroelectric lead zirconate-titanate (PZT) solid solutions. Under certain conditions, RuO2 can react with PZT to form lead ruthenate (Pb2Ru2O6.5) during processing at elevated temperatures resulting in lead depletion from PZT. The standard Gibbs energies of formation of RuO2 and Pb2Ru2O6.5 and activities of components of the PZT solid solution have been determined recently. Using this data along with older thermodynamic information on PbZrO3 and PbTiO3, the stability domain of Pb2Ru2O6.5 is computed as a function of PZT composition, temperature and oxygen partial pressure in the gas phase. The results show PbZrO3-rich compositions are more prone to react with RuO2 at all temperatures. Increasing temperature and decreasing oxygen partial pressure suppress the reaction. Graphically displayed are the reaction zones as a function of oxygen partial pressure and PZT composition at temperatures 973, 1173 and 1373 K.

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Using solid oxide galvanic cells of the type: MnO + Gd2O3 + GdMnO3/O-2/Ni + NiO and Mn3O4 + GdMnO3 + GdMn2O5/O-2/air the equilibrium oxygen pressure for the following reactions :MnO + 1/2Gd(2)O(3) + 1/4O(2) = GdMnO3 1/3Mn(3)O(4) + GdMnO3 + 1/3O(2) = GdMn2O5 was determined in the temperature range from 1073 to 1450 K. From the determined equilibrium oxygen partial pressure the corresponding G i b b s free energy change for these reactions was derived: Delta G(f,GdMnO3)(0) (+/- 425J) 132721(+/ - 2240) +51.91(+/ - 0.81)T Delta G(f,GdMn2O5)(0)(+/- 670J) 121858(+/ - 6176) + 79.52(+/ - 4.83)T From these data, standard G i b b s energies, enthalpies and entropies of formation of GdMnO3 and GdMn2O5 from component oxides and from the elements are derived. Thermodynamic data tables for the two ternary phases are compiled from 298.15 to 1400 K.

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Three compounds have been found to be stable in the pseudobinary system Na2O---(α)Al2O3 between 825 and 1400 K; two nonstoichiometric phases, β-alumina and β″-alumina, and NaAlO2. The homogeneity of β-alumina ranges from 9.5 to 11 mol% Na2O, while that of β″-alumina from 13.3 to 15.9 mol% Na2O at 1173 K. The activity of Na2O in the two-phase fields has been determined by a solid-state potentiometric technique. Since both β- and β″-alumina are fast sodium ion conductors, biphasic solid electrolyte tubes were used in these electrochemical measurements. The open circuit emf of the following cells were measured from 790 to 980 K: [GRAPHICS] The partial molar Gibbs' energy of Na2O relative to gamma-Na2O in the two-phase regions can be represented as: DELTA-GBAR(Na2O)(alpha- + beta-alumina) = -270,900 + 24.03 T, DELTA-GBAR(Na2O)(beta- + beta"-alumina) = -232,700 + 56.19 T, and DELTA-GBAR(Na2O)(beta"-alumina + NaAlO2) = -13,100 - 4.51 T J mol-1. Similar galvanic cells using a Au-Na alloy and a mixture of Co + CoAl(2+2x)O4+3x + (alpha)Al2O3 as electrodes were used at 1400 K. Thermodynamic data obtained in these studies are used to evaluate phase relations and partial pressure of sodium in the Na2O-(alpha) Al2O3 system as a function of oxygen partial pressure, composition and temperature.

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The conductivity of MgAl2O4 has been measured at 1273, 1473 and 1673 K as a function of the partial pressure of oxygen ranging from 105 to 10−14 Pa. The MgAl2O4 pellet, sandwiched between two platinum electrodes, was equilibrated with a flowing stream of either Ar + O2, CO + CO2 or Ar + H2 + H2O mixture of known composition. The gas mixture established a known oxygen partial pressure. All measurements were made at a frequency of 1 kHz. These measurements indicate pressure independent ionic conductivity in the range 1 to 10−14 Pa at 1273 K, 10−1 to 10−12 Pa at 1473 K and 10−1 to 10−4 Pa at 1673 K. The activation energy for ionic conduction is 1·48 eV, close to that for self-diffusion of Mg2+ ion in MgAl2O4 calculated from the theoretical relation of Glyde. Using the model, the energy for cation vacancy formation and activation energy for migration are estimated.

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This paper deals with the reactive sputtering of titanium in an argon and oxygen mixture. The variation in cathode potential as a function of oxygen partial pressure has been explained in terms of cathode poisoning effects. The titania films deposited during this process have been studied for their structural and optical characteristics. The effect of substrate temperature (from 25 to 400 °C) and annealing (from 250 to 700 °C) on the packing density, refractive index, extinction coefficient, and crystallinity has been investigated. The refractive index varied from 2.24 to 2.46 and extinction coefficient from 2.6 × 10-3 to 10.4× 10-3 at 500 nm as the substrate temperature increased from 25 to 400 °C. The refractive index increased from 2.19 to 2.35 and extinction coefficient changed from 3.2× 10-3 to 11.6 × 10-3 at 500 nm as the annealing temperature was increased from 250 to 700 °C. Anatase and rutile phases have been observed in the films deposited at 400 °C substrate temperature and annealed at 300 °C. The changes in the optical constants at higher substrate temperature have been attributed to an increase in packing density, oxygen content, and crystallinity of the films.

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Epitaxial LaNiO3(LNO) thin films on LaAlO3(LAO), SrTiO3(STO), and YSZ are grown by pulsed laser deposition method at 350 mTorr oxygen partial pressure and 700 °C substrate temperature. As‐deposited LNO films are metallic down to 10 K. c‐axis oriented YBa2Cu3O7 (YBCO) films were grown on LNO/LAO as well as LNO/STO surfaces without affecting superconducting transition temperature of YBCO. Textured LNO thin films were grown on c‐axis oriented YBCO/STO and YBCO/YSZ . Transport measurements of these bilayer films showed that LNO is a good metallic contact material for YBCO.

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The phase relations in the system Cu-Gd-O have been determined at 1273 K by X-ray diffrac- tion, optical microscopy, and electron microprobe analysis of samples equilibrated in quartz ampules and in pure oxygen. Only one ternary compound, CuGd2O4, was found to be stable. The Gibbs free energy of formation of this compound has been measured using the solid-state cell Pt, Cu2O + CuGd2O4 + Gd2O3 // (Y2O3) ZrO2 // CuO + Cu2O, Pt in the temperature range of 900 to 1350 K. For the formation of CuGd2O4 from its binary component oxides, CuO (s) + Gd2O3 (s) → CuGd2O4 (s) ΔG° = 8230 - 11.2T (±50) J mol-1 Since the formation is endothermic, CuGd2O4 becomes thermodynamically unstable with respect to CuO and Gd2O3 below 735 K. When the oxygen partial pressure over CuGd2O4 is lowered, it decomposes according to the reaction 4CuGd2O4 (s) → 4Gd2O3 (s) + 2Cu2O (s) + O2 (g) for which the equilibrium oxygen potential is given by Δμo 2 = −227,970 + 143.2T (±500) J mol−1 An oxygen potential diagram for the system Cu-Gd-O at 1273 K is presented.

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The phase relations in the system Cu-Ho-O have been determined at 1300 K using X-ray diffraction, optical microscopy, and electron microprobe analysis of samples equilibrated in evacuated quartz ampules and in pure oxygen. Only one ternary compound, Cu2Ho2O5, was found to be stable. The Gibbs free energy of formation of this compound has been measured using the solid-state cell Pt,Cu2O + Cu2Ho2O5 + Ho2O3/(Y2O3)ZrO2/CuO + Cu2O,Pt in the temperature range of 973 to 1350 K. For the formation of Cu2Ho2O5 from its binary component oxides, 2CuO(s) + Ho2O3(S) --> Cu2Ho2O5(s) DELTAG-degrees = 11190 - 13.8T(+/- 120) J-mol-1 Since the formation is endothermic, CU2Ho2O5 becomes thermodynamically unstable with respect to CuO and Ho2O3 below 810 K. When the oxygen partial pressure over Cu2Ho2O5 is lowered, it decomposes according to the reaction 2Cu2Ho2O5(s) --> 2Ho2O3(s) + 2Cu2O(S) + O2(g) for which the equilibrium oxygen potential is given by DELTAmu(O2) = - 238510 + 160.2T(+/- 450) J.mol-1 The decomposition temperature at an oxygen partial pressure of 1.52 x 10(4) Pa was measured using a combined DTA-TGA apparatus. Based on these results, an oxygen potential diagram for the system Cu-Ho-O at 1300 K is presented.

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Abstract: Activities in the spinel solid solution FexMg1-xAl2O4 saturated with alpha-Al2O3 have been measured for the compositional range 0 < X < 1 between 1100 and 1350 K using a bielectrolyte solid-state galvanic cell, which may be represented as Pt, Fe + FexMg1-xAl2O4 + alpha-Al2O3//(Y2O3)ThO2/ (CaO)ZrO2//Fe + FeAl2O4 + alpha-Al2O3, Pt Activities of ferrous and magnesium aluminates exhibit small negative deviations from Raoult's law. The excess free energy of mixing of the solid solution is a symmetric function of composition and is independent of temperature: Delta G(E) = -1990 X(1 - X J/mol. Theoretical analysis of cation distribution in spinel solid solution also suggests mild negative deviations from ideality. The lattice parameter varies linearly with composition in samples quenched from 1300 K. Phase relations in the FeO-MgO-Al2O3 system at 1300 K are deduced from the results of this study and auxiliary thermodynamic data from the literature. The calculation demonstrates the influence of intracrystalline ion exchange equilibrium between nonequivalent crystallographic sites in the spinel structure on intercrystalline ion exchange equilibrium between the monoxide and spinel solid solutions (tie-lines). The composition dependence of oxygen partial pressure at 1300 K is evaluated for three-phase equilibria involving the solid solutions Fe + FexMg1-xAl2O4 + alpha-Al2O3 and Fe + FeyMg1-yO + FexMg1-xAl2O4. Dependence of X, denoting the composition of the spinel solid solution, on parameter Y, characterizing the composition of the monoxide solid solution with rock salt structure, in phase fields involving the two solid solutions is elucidated. The tie-lines are slightly skewed toward the MgAl2O4 corner.

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The Gibbs free energies of formation of strontium and barium zirconates have been determined in the temperature range 960 to 1210 K using electrochemical cells incorporating the respective alkaline-earth fluoride single crystals as solid electrolytes. Pure strontium and barium monoxides were used in the reference electrodes. During measurements on barium zirconate, the oxygen partial pressure in the gas phase over the electrodes was maintained at a low value of 18.7 Pa to minimize the solubility of barium peroxide in the monoxide phase. Strontium zirconate was found to undergo a phase transition from orthorhombic perovskite to) with space group Cmcm; D-2h(17) to tetragonal perovskite (t) having the space group 14/mcm; D-4h(18) at 1123 (+/- 10) K. Barium zirconate does not appear to undergo a phase transition in the temperature range of measurement. It has the cubic perovskite (c) structure. The standard free energies of formation of the zirconates from their component binary oxides AO (A = Sr, Ba) with rock salt (rs) and ZrO2 with monoclinic (m) structures can be expressed by the following relations:SrO (rs) + ZrO2 (m) --> SrZrO3 (o) Delta G degrees = -74,880 - 14.2T (+/-200) J mol(-1) SrO (rs) + ZrO2 (m) --> SrZrO3 (t) Delta G degrees = -73,645 - 15.3T (+/-200) J mol(-1) BaO (rs) + ZrO2 (m) --> BaZrO4 (c) Delta G degrees = -127,760 - 1.79T (+/-250) J mol(-1) The results of this study are in reasonable agreement with calorimetric measurements reported in the literature. Systematic trends in the stability of alkaline-earth zirconates having the stoichiometry AZrO(3) are discussed.

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A simple method for the preparation of monophasic beta-SiAlON using nitridation of Si and AIN with an oxygen partial pressure of 10(-4) atm is described. The effect of the AlN/Si ratio in the initial mixture on the formation of beta-SiAlON is discussed. The likely mechanism of the formation of beta-SiAlON is outlined.