Photocatalytic decomposition of methylene blue via Fenton mechanisms by silicon wafer doped with Au and Cu: a theoretical and experimental study

In this work, we studied the photocatalytic and the structural aspects of silicon wafers doped with Au and Cu submitted to thermal treatment. The materials were obtained by deposition of metals on Si using the sputtering method followed by fast heating method. The photocatalyst materials were characterized by synchrotron-grazing incidence X-ray fluorescence, ultraviolet-visible spectroscopy, X-ray diffraction, and assays of H(2)O(2) degradation. The doping process decreases the optical band gap of materials and the doping with Au causes structural changes. The best photocatalytic activity was found for thermally treated material doped with Au. Theoretical calculations at density functional theory level are in agreement with the experimental data.

Aerosol Deposition of Ba0.8Sr0.2TiO3 Thin Films

In this work we optimized conditions for aerosol deposition of homogeneous, nano-grained, smooth Ba0.8Sr0.2TiO3 thin films. Investigation involved optimization of deposition parameters, namely deposition time and temperature for different substrates. Solutions were prepared from titanium isopropoxide, strontium acetate and barium acetate. Films were deposited on Si (1 0 0) or Si covered by platinum (Pt (1 1 1) /Ti/SiO2/Si). Investigation showed that the best films were obtained at substrate temperature of 85 degrees C. After deposition films were slowly heated up to 650 degrees C, annealed for 30 min, and slowly cooled. Grain size of BST films deposited on Si substrate were in the range 40-70 nm, depending on deposition conditions, while the same films deposited on Pt substrates showed mean grain size in the range 35-50 nm. Films deposited under optimal conditions were very homogeneous, crack-free, and smooth with rms roughness lower than 4 nm for both substrates.

Resolving power of 2D pion interferometry

A χ2 analysis is performed to test the resolving power of two-dimensional pion interferometry using for illustration the preliminary E802 data on Si+Au at 14.6 A GeV/c. We find that the resolving power to distinguish two decoupling geometries of different dynamical models is enhanced by studying the variation of the mean χ2 per degrees of freedom with respect to the range of the analysis in the qT, qL plane. The preliminary data seem to rule out dynamical models with significant ω, η resonance formation yields.

LiNbO3 thin films prepared from a polymeric precursor method

LiNbO3 thin films were prepared from polymeric precursor method by dip coating. The precursor films, deposited on Si(111) substrates, were heat-treated from 400°C to 900°C in order to study the heat treatment influence on the crystallinity and microstructure of the final film. The X-ray diffraction patterns showed, in particular, that these films crystallize at low temperature (450°C) and present no preferential orientation. The scanning electron microscopy studies showed that the film microstructure is strongly influenced by the annealing temperature. © 1997 Trans Tech Publications.

Preparação e caracterização de filmes finos do tipo 'Pb IND. 1-x-yCa IND. xSr IND.yTiO IND. 3'

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Avaliação de extratores químicos na determinação de silício disponível em solos cultivados com cana-de-açúcar

Pós-graduação em Agronomia (Energia na Agricultura) - FCA

Estudo da estabilização da fase perovskita PMN em filmes ultrafinos

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Preparação e caracterização de filmes finos Sr1-xMexTiO3(Me=Fe, Ni)

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Caracterização do diamante CVD depositado sob atmosfera com adição de baixa concentração de N2

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Síntese e caracterização de filmes de 'CACU' IND.3' 'TI' IND. 4' 'O' IND. 12'em substrato de silicio/niquelato de lantânio e o estudo da cristalização por efeito da pressão

Pós-graduação em Química - IQ

Filmes de SiOx crescidos em substrato de zircônia tetragonal policristalina estabilizada por ítria: influência na durabilidade da adesão a cimentos resinosos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Síntese e caracterização elétrica de filmes varistores à base de 'SN''O IND.2' modificados superficialmente por difusão 'CR POT.3+' na região do contorno de grão

Pós-graduação em Química - IQ

Obtenção e caracterização de filmes finos de Bi3NbO7 pelo método dos precursores poliméricos

Pós-graduação em Engenharia Mecânica - FEG

Electrical Properties at Grain Boundaries Influenced by Cr3+ Diffusion in SnO2.ZnO.Nb2O5-Films Varistor Prepared by Electrophoresis Deposition

SnO2-based varistors are strong candidates to replace the ZnO-based varistors due to ordering fewer additives to improve its electrical behavior as well as by showing similar nonlinear characteristics of ZnO varistors. In this work, SnO2-nanoparticles based-varistors with addition of 1.0 %mol of ZnO and 0.05 %mol of Nb2O5 were synthesized by chemical route. SnO2.ZnO.Nb2O5-films with 5 μm of thickness were obtained by electrophoretic deposition (EPD) of the nanoparticles on Si/Pt substrate from alcoholic suspension of SnO2-based powder. The sintering step was carried out in a microwave oven at 1000 °C for 40 minutes. Then, Cr3+ ions were deposited on the films surface by EPD after the sintering step. Each sample was submitted to different thermal treatments to improve the varistor behavior by diffusion of ions in the samples. The films showed a nonlinear coefficient (α) greater than 9, breakdown voltage (VR) around 60 V, low leakage current (IF ≈ 10-6 A), height potential barrier above 0.5 eV and grain boundary resistivity upward of 107 Ω.cm.

Foliar or soil applications of silicon alleviate water-deficit stress of potato plants

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)