Wet-chemical synthesis of magnesium niobate nanoparticles powders

Nanosized and highly reactive magnesium mobate (MgNb2O6) powders were successfully synthesized by a new wet-chemical method by means of the dissolution of Nb2O5 center dot 5H(2)O and in a solution of oxalic acid followed by the addition of stoichiometric amounts of magnesium carbonate. The Nb-Mg-oxalic acid solution was evaporated resulting in a dry and amorphous powder that was calcined in the temperature range from 200 to 900 degrees C for 2 h. The crystallization process from the amorphous state to the crystalline MgNb2O6 was followed by thermal analysis. The calcined powders characterized by FT-Raman spectroscopy, X-ray diffraction (XRD) and their morphology examined by high resolution scanning electron microscopy (HR-SEM). Pure MgNb2O6, free from the second phases and obtained at 800 degrees C was confirmed by a combined analysis using XRD and FT-Raman. The average diameter of the particles was calculated from the HR-SEM image as 70 urn approximately. This technique allows a better mixing of the constituent elements and thus a better reactivity of the mixture to obtain pre-reaction products with high purity at lower temperatures and reducing cost. It can offer a great advantage in the PMN-PT formation with respect to the solid-state synthesis. (c) 2006 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

The influence of sintering process and atmosphere on the non-ohmic properties of SnO2 based varistor

The non-ohmic properties of the 98.95% SnO2 + 1.0 CoO + 0.05 Nb2O5 (all in mole%) system, as well as the influence of sintering temperature and atmosphere on these properties, were characterized in this study. The maximum non-linear coefficient (alpha = 32) was obtained for a sintering temperature of 1300 degrees C in an oxygen atmosphere and this maximum is associated with the presence of O in SnO2 grain boundaries, as interface defects. Experimental results also indicate thermionic-type conduction mechanisms, which are associated with the potential barrier of Schottky or Poole-Frenkel types.

Microstructure and electric properties of a SnO2 based varistor

High non-linear J x E electrical characteristic (alpha=41) were obtained in the Nb2O5 and Cr2O3 doped CoO highly densified SnO2 ceramics. X-ray diffraction analysis showed that these ceramics are apparently single phase. Electrical properties and microstructure are highly dependent on the Cr2O3 concentration and on the sintering temperature. Excess of Cr2O3 leads to porous ceramics destroying the material's electrical characteristics probably due to precipitation of second phase of CoCr2O4 Dopant segregation and/or solid solution formation at the grain boundaries can be responsible for the formation of the electrical barriers which originate the varistor behaviour. (C) 1998 Elsevier B.V. Limited and Techna S.r.l. All rights reserved.

Raman scattering, differential scanning calorimetry and Nd3+ spectroscopy in alkali niobium tellurite glasses

Alkali niobium tellurite glasses have been prepared and some of their properties measured by differential scanning calorimetry and Raman scattering. The vitreous domain was established in the pseudo ternary phases diagram for the system TeO2-Nb2O5-(0.5K(2)O-0.5Li(2)O). Raman scattering shows that for samples in the TeO2 rich part of the phase diagram the vitreous structure is composed essentially of (TeO4) units connected by the vertices, as in the alpha-TeO2 crystal. The addition of alkali and niobium oxides causes depolymerization to occur with structures composed essentially of (TeO3) and (NbO6) units. Samples with the composition (mol%) 80TeO(2)-10Nb(2)O(5)-5K(2)O-5Li(2)O, stable against crystallization, were prepared containing up to 10% mol Nd3+. The addition of this oxide increases the rigidity of the vitreous network shifting characteristic temperatures to higher temperatures. For the 10% Nd3+ sample amorphous phase separation is assumed to exist from the observation of two glass transition temperatures. Spectroscopic properties such as Judd-Ofelt Omega(lambda) intensity parameters, radiative emission probabilities, and induced emission cross sections were calculated. From these results and also from the emission quenching observed as a function of Nd3+ concentration, we suggest that these glasses could be utilized in optical amplifying devices. (C) 1999 Elsevier B.V. B.V. All rights reserved.

A new method to control particle size and particle size distribution of SnO2 nanoparticles for gas sensor applications

The controlled growth of SnO2 nanoparticles for gas sensor applications is reported by these authors. Nb2O5 additive is used to control nucleation and growth of the SnO2 (see Figure), which is synthesized by the polymeric precursor method. Preliminary gas sensing measurements are performed and it is demonstrated that the response time of the Nb2O5-doped SnO2 is faster than that of the undoped material.

Preparation of new glass systems by the polymeric precursor method for dental applications

Glass ionomer cements (GICs) are largely employed in Dentistry for several applications, such as luting cements for the attachment of crowns, bridges, and orthodontic brackets as well as restorative materials. The development of new glass systems is very important in Dentistry to improve of the mechanical properties and chemical stability. The aim of this study is the preparation of two glass systems containing niobium in their compositions for use as GICs. Glass systems based on the composition SiO2,Al2O3-Nb2O5-CaO were prepared by chemical route at 700degreesC. The XRD and DTA results confirmed that the prepared materials are glasses. The structures of the obtained glasses were compared to commercial material using FTIR, Al-27 and Si-29 MAS-NMR. The analysis of FTIR and MAS-NMR spectra indicated that the systems developed and commercial material are formed by SiO4 and AlO4 linked tetrahedra. These structures are essential to get the set time control and to have cements. These results encourage further applications of the experimental glasses in the formation of GICs. (C) 2004 Elsevier B.V. All rights reserved.

Effect of La2O3 addition and O-2 atmosphere on the electric properties of SnO2TiO2

The electric properties of (Sn, Ti)O-2 doped with 1.00 mol% CoO, 0.05 mol% Nb2O5 and xmol% La2O3 (0.25 less than or equal to x less than or equal to 1.00) have been studied. Sn0.25Ti0.75Co0.01Nb0.005 doped with 0.50 mol% La2O3 has a nonlinearity coefficient of 6. An increase in the concentration of La2O3 raised its resistivity, thereby altering the electric properties of the material. A thermal treatment in oxygen atmosphere increased the nonlinearity coefficient to a value of 9. (C) 2003 Elsevier B.V. All rights reserved.

Effect of atmosphere on the electrical properties of TiO2-SnO2 varistor systems

This work illustrates the advancement of research on TiO2-based electroceramics. In this work will be presented that the addition of different dopants, as well as thermal treatments at oxidizing and inert atmosphere, influences of the densification, the mean grain size and the electrical properties of the TiO2-based varistor ceramics. Dopants like Ta2O5, Nb2O5, and Cr2O3 have an especial role in the barrier formation at the grain boundary in the TiO2 varistors, increasing the nonlinear coefficient and decreasing the breakdown electric field. The influence of Cr'(Ti) is to increase the O' and O'(2) adsorption at the grain boundary interface and to promote a decrease in the conductivity by donating electrons to O-2 adsorbed at the grain boundary. In this paper, TiO2 and (Sn,Ti)O-2-based studies of polycrystalline ceramics, which show a non-linear I-V electrical response typical of low voltage varistor systems are also presented. All these systems are potentially promising for varistor applications. (C) 2004 Kluwer Academic Publishers.

Effect of seed addition on SnO2-based varistors for low voltage application

The effect of seed addition on the microstructure and non-ohmic properties of the SnO2 + 1%CoO + 0.05%Nb2O5 ceramic-based system was analyzed. Two classes of seeds were prepared: 99% SnO2 + 1%CuO and 99% SnO2 + 1%CoO (mol%); both classes were added to the ceramic-based system in the amount of 1%, 5%, and 10%. The two systems containing 1% of seeds resulted in a larger grain size and a lower breakdown voltage. The addition of 1% copper seeds produces a breakdown voltage (V b) of ∼ 37 V and a leakage current (fic) of 29 μA. On the other hand, the addition of 1% cobalt seeds produced a breakdown voltage of 57 V and a leakage current of 70 μA. Both systems are of great technological interest for low voltage varistor applications, by means of appropriate strategies to reduce the leakage current. Using larger amounts of seeds was not effective since the values of breakdown voltage in both cases are close to a system without seeds. To our knowledge, there are no reports in the literature regarding the use of seeds in the SnO2 system for low voltage applications. A potential barrier model which illustrates the formation of oxygen species (O′2(ads), O′ads, and O″ads) at the expense of clusters near the interface between grains is proposed. © 2012 The American Ceramic Society.

Interface formation of nanostructured heterojunction SnO 2:Eu/GaAs and electronic transport properties

Thin films of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with GaAs layers, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in optoelectronic devices, combining the emission from the rare-earth doped transparent oxide (Eu3+-doped SnO2 presents very efficient red emission) with a high mobility semiconductor. The advantage of this structure is the possibility of separation of the rare-earth emission centers from the electron scattering, leading to a strongly indicated combination for electroluminescence. Electrical characterization of the heterojunction SnO2:Eu/GaAs shows a significant conductivity increase when compared to the conductivity of the individual films, and the monochromatic light irradiation (266 nm) at low temperature of the heterojunction GaAs/SnO2:Eu leads to intense conductivity increase. Scanning electron microscopy (SEM) of the heterojunction cross section shows high adherence and good morphological quality of the interfaces substrate/SnO2 and SnO2/GaAs, even though the atomic force microscopy (AFM) image of the GaAs surface shows disordered particles, which increases with sample thickness. On the other hand, the good morphology of the SnO2:Eu surface, shown by AFM, assures the good electrical performance of the heterojunction. The observed improvement on the electrical transport properties is probably related to the formation of short conduction channels at the semiconductors interface, which may exhibit two-dimensional electron gas (2DEG) behavior. © 2012 Elsevier B.V. All rights reserved.

Photocatalytic activity of semiconductor sulfide heterostructures

This paper reports a theoretical and experimental study of the heterostructure photocatalytic activity in a CdS or ZnS and CdS@ZnS decorated system prepared by a microwave assisted solvothermal (MAS) method. A theoretical model of the decorated system was created in order to analyze the electronic transition mainly in their interface. The results show that CdS and ZnS interfaces produce an electron charge transfer from the CdS electron-populated clusters to the ZnS hole-populated clusters which helps to enhance the photocatalytic activity of the CdS@ZnS decorated system. © 2013 The Royal Society of Chemistry.

Síntese de templates para aplicação em piezocerâmicas livre de chumbo

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Síntese e caracterização de vidros teluritos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Caracterização elétrica e microestrutural de cerâmicas varistoras de baixa tensão à base de ('SN IND.1-x''TI IND.x')'O IND.2' e 'SN''O IND.2' dopados com 'CO''O' e 'NB IND.2''O IND.5'

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Propriedades elétricas e modelagem da barreira de potencial do sistema varistor à base de SnO2-TiO2

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)