989 resultados para Mn ions implantation


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Energy levels and oscillator strengths (transition probabilities) have been calculated for transitions among 46 fine-structure levels of the (1s(2)) 2s(2) 2p(2), 2s2p(3),2p(4), 2s(2)2p3s, 2s(2) 2p3p and 2s(2)2p3d configurations of C-like K XIV, Sc XVI, Ti XVII, V XVIII, Cr XIX and Mn XX using the GRASP code. Configuration interaction and relativistic effects have been included while generating the wavefunctions. Calculated values of energy levels agree within 3% with the experimentally compiled results, and the length and velocity forms of oscillator strengths agree within 20% for a majority of allowed transitions.

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The kinetics of reductive dissolution of NaBiO3, by Mn-II and Ce-III ions are studied as a function of [Mn-II] or [Ce-III], [Bi-III], [H+] and temperature. They fit a simple inverse-cubic rate law and can be readily interpreted using a mechanism in which the rate-determining step is the reaction between an adsorbed reducing species (i.e. a Mn-II or Ce-III ion) and its associated surface site; protonation of the surface site promotes the rate of reaction. The rate of dissolution decreases with increasing initial concentration of Bi-III ions owing to competitive inhibition by the latter species. A kinetic model, based on this mechanism, is applied and provides a quantitative description of the observed kinetics.

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Cette thèse est dédiée à l’étude des matériaux InMnP et GaMnP fabriqués par implantation ionique et recuit thermique. Plus précisément nous avons investigué la possibilité de former par implantation ionique des matériaux homogènes (alliages) de InMnP et GaMnP contenant de 1 à 5 % atomiques de Mn qui seraient en état ferromagnétique, pour des possibles applications dans la spintronique. Dans un premier chapitre introductif nous donnons les motivations de cette recherche et faisons une revue de la littérature sur ce sujet. Le deuxième chapitre décrit les principes de l’implantation ionique, qui est la technique utilisée pour la fabrication des échantillons. Les effets de l’énergie, fluence et direction du faisceau ionique sur le profil d’implantation et la formation des dommages seront mis en évidence. Aussi dans ce chapitre nous allons trouver des informations sur les substrats utilisés pour l’implantation. Les techniques expérimentales utilisées pour la caractérisation structurale, chimique et magnétique des échantillons, ainsi que leurs limitations sont présentées dans le troisième chapitre. Quelques principes théoriques du magnétisme nécessaires pour la compréhension des mesures magnétiques se retrouvent dans le chapitre 4. Le cinquième chapitre est dédié à l’étude de la morphologie et des propriétés magnétiques des substrats utilisés pour implantation et le sixième chapitre, à l’étude des échantillons implantés au Mn sans avoir subi un recuit thermique. Notamment nous allons voir dans ce chapitre que l’implantation de Mn à plus que 1016 ions/cm2 amorphise la partie implantée du matériau et le Mn implanté se dispose en profondeur sur un profil gaussien. De point de vue magnétique les atomes implantés se trouvent dans un état paramagnétique entre 5 et 300 K ayant le spin 5/2. Dans le chapitre 7 nous présentons les propriétés des échantillons recuits à basses températures. Nous allons voir que dans ces échantillons la couche implantée est polycristalline et les atomes de Mn sont toujours dans un état paramagnétique. Dans les chapitres 8 et 9, qui sont les plus volumineux, nous présentons les résultats des mesures sur les échantillons recuits à hautes températures : il s’agit d’InP et du GaP implantés au Mn, dans le chapitre 8 et d’InP co-implanté au Mn et au P, dans le chapitre 9. D’abord, dans le chapitre 8 nous allons voir que le recuit à hautes températures mène à une recristallisation épitaxiale du InMnP et du GaMnP; aussi la majorité des atomes de Mn se déplacent vers la surface à cause d’un effet de ségrégation. Dans les régions de la surface, concentrés en Mn, les mesures XRD et TEM identifient la formation de MnP et d’In cristallin. Les mesures magnétiques identifient aussi la présence de MnP ferromagnétique. De plus dans ces mesures on trouve qu’environ 60 % du Mn implanté est en état paramagnétique avec la valeur du spin réduite par rapport à celle trouvée dans les échantillons non-recuits. Dans les échantillons InP co-implantés au Mn et au P la recristallisation est seulement partielle mais l’effet de ségrégation du Mn à la surface est beaucoup réduit. Dans ce cas plus que 50 % du Mn forme des particules MnP et le restant est en état paramagnétique au spin 5/2, dilué dans la matrice de l’InP. Finalement dans le dernier chapitre, 10, nous présentons les conclusions principales auxquels nous sommes arrivés et discutons les résultats et leurs implications.

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Ferromagnetic clusters were incorporated into GaAs samples by Mn implantation and subsequent annealing. The composition and structural properties of the Mn-based nanoclusters formed at the surface and buried into the GaAs sample were analyzed by x-ray and microscopic techniques. Our measurements indicate the presence of buried MnAs nanoclusters with a structural phase transition around 40 °C, in accord with the first-order magneto-structural phase transition of bulk MnAs. We discuss the structural behavior of these nanoclusters during their formation and phase transition, which is an important point for technological applications. © 2005 American Institute of Physics.

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Synthetic calcium phosphates, despite their bioactivity, are brittle. Calcium phosphate-mullite composites have been suggested as potential dental and bone replacement materials which exhibit increased toughness. Aluminium, present in mullite, has however been linked to bone demineralisation and neurotoxicity: it is therefore important to characterise the materials fully in order to understand their in vivo behaviour. The present work reports the compositional mapping of the interfacial region of a calcium phosphate-20 wt% mullite biocomposite/soft tissue interface, obtained from the samples implanted into the long bones of healthy rabbits according to standard protocols (ISO-10993) for up to 12 weeks. X-ray micro-fluorescence was used to map simultaneously the distribution of Al, P, Si and Ca across the ceramic-soft tissue interface. A well defined and sharp interface region was present between the ceramic and the surrounding soft tissue for each time period examined. The concentration of Al in the surrounding tissue was found to fall by two orders of magnitude, to the background level, within similar to 35 mu m of the implanted ceramic.

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Unlike the case with other divalent transition metal M\[TCNQ](2)(H(2)O)(2) (M = Fe, Co, Ni) analogues, the electrochemically induced solid-solid phase interconversion of TCNQ microcrystals (TCNQ = 7,7,8,8-tetracyanoquinodimethane) to Mn\[TCNQ](2)(H(2)O)(2) occurs via two voltammetrically distinct, time dependent processes that generate the coordination polymer in nanofiber or rod-like morphologies. Careful manipulation of the voltammetric scan rate, electrolysis time, Mn(2+)((aq)) concentration, and the method of electrode modification with solid TCNQ allows selective generation of either morphology. Detailed ex situ spectroscopic (IR, Raman), scanning electron microscopy (SEM), and X-ray powder diffraction (XRD) characterization clearly establish that differences in the electrochemically synthesized Mn-TCNQ material are confined to morphology. Generation of the nanofiber form is proposed to take place rapidly via formation and reduction of a Mn-stabilized anionic dimer intermediate, \[(Mn(2+))(TCNQ-TCNQ)(2)(*-)], formed as a result of radical-substrate coupling between TCNQ(*-) and neutral TCNQ, accompanied by ingress of Mn(2+) ions from the aqueous solution at the triple phase TCNQ/electrode/electrolyte boundary. In contrast, formation of the nanorod form is much slower and is postulated to arise from disproportionation of the \[(Mn(2+))(TCNQ-TCNQ)(*-)(2)] intermediate. Thus, identification of the time dependent pathways via the solid-solid state electrochemical approach allows the crystal size of the Mn\[TCNQ](2)(H(2)O)(2) material to be tuned and provides new mechanistic insights into the formation of different morphologies.

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High valent metal(IV)-oxo species, \[M(=O)(Melm)(n)(OAc)](+) (M = Mn-Ni, MeIm = 1-methylimidazole, n = 1-2), which are relevant to biology and oxidative catalysis, were produced and isolated in gas-phase reactions of the metal(II) precursor ions \[M(MeIm)(n)(OAc)](+) (M = Mn-Zn, n = 1-3) with ozone. The precursor ions \[M(MeIm)(OAc)](+) and \[M(MeIm)(2)(OAc)](+) were generated via collision-induced dissociation of the corresponding \[M(MeIm)(3)(OAc)](+) ion. The dependence of ozone reactivity on metal and coordination number is discussed. Copyright (C) 2010 John Wiley & Sons, Ltd.

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The phase-interconversions between the spinel-, brownmillerite-, defect rocksalt and perovskite-type structures have been investigated by way of (i) introducing deficiency in A-sites in CaxMn2-xO3 (0.05 <= x <= 1) i.e., by varying Ca/Mn ratio from 0.025 to 1 and (ii) nonstoichiometric CaMnO3-delta (CMO) with 0.02 <= delta <= 1. The temperature dependence of resistivity (rho-T) have been investigated on nonstoichiometric CaMnO3-delta (undoped) as well as the CMO substituted with donor impurities such as La3+, Y3+, Bi3+ or acceptor such as Na1+ ion at the Ca-site. The rho-T characteristics of nonstoichiometric CaMnO3-delta is strongly influenced by oxygen deficiency, which controls the concentration of Mn3+ ions and, in turn, affects the resistivity, rho. The results indicated that the substitution of aliovalent impurities at Ca-site in CaMnO3 has similar effects as of CaMnO3-delta ( undoped) annealed in atmospheres of varying partial pressures whereby electron or hole concentration can be altered, yet the doped samples can be processed in air or atmospheres of higher P-O2. The charge transport mechanisms of nonstoichiometric CaMnO3-delta as against the donor or acceptor doped CaMnO3 (sintered in air, P-O2 similar to 0.2 atm) have been predicted. The rho (T) curves of both donor doped CaMnO3 as well as non-stoichiometric CaMnO3-delta, is predictable by the small polaron hopping (SPH) model, which changes to the variable range hopping (VRH) at low temperatures whereas the acceptor doped CaMnO3 exhibited an activated semiconducting hopping ( ASH) throughout the measured range of temperature (10-500 K).

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The effect of Surface lipopolysaccharides (LPS) on the electrophoretic softness and fixed charge density in the ion-penetrable layer of Acidithiobacillus ferrooxidans cells grown in presence of copper or arsenic ions have been discussed, The electrophoretic mobility data were analyzed using the soft-particle electrophoresis theory. Cell surface potentials of all the strains based on soft-particle theory were lower than those estimated using the conventional Smoluchowski theory, Exposure to metal ions increased the Surface electrophoretic softness with decrease in the fixed charge density. Effect of cell surface lipopolysaccharides on the model parameters are investigated and discussed.

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Formation of nanocrystalline TiN at low temperatures was demonstrated by combining Pulsed Laser Deposition (PLD) and ion implantation techniques. The Ti films of nominal thickness similar to 250 nm were deposited at a substrate temperature of 200 degrees C by ablating a high pure titanium target in UHV conditions using a nanosecond pulsed Nd:YAG laser operating at 1064 nm. These films were implanted with 100 keV N+ ions with fluence ranging from 1.0 x 10(16) ions/cm(2) to 1.0 x 10(17) ions/cm(2). The structural, compositional and morphological evolutions were tracked using Transmission Electron Microscopy (TEM), Secondary Ion Mass Spectrometry (SIMS) and Atomic Force Microscopy (AFM), respectively. TEM analysis revealed that the as-deposited titanium film is an fcc phase. With increasing ion fluence, its structure becomes amorphous phase before precipitation of nanocrystalline fcc TiN phase. Compositional depth profiles obtained from SIMS have shown the extent of nitrogen concentration gradient in the implantation zone. Both as-deposited and ion implanted films showed much higher hardness as compared to the bulk titanium. AFM studies revealed a gradual increase in surface roughness leading to surface patterning with increase in ion fluence.

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A novel manganese phosphite-oxalate, [C2N2H10][Mn-2(II)(OH2)(2)(HPO3)(2)(C2O4)] has been hydothermally synthesized and its structure determined by single-crystal X-ray diffraction. The structure consists of neutral manganese phosphite layers, [Mn(HPO3)](infinity), formed by MnO6 octahedra and HPO3 units, cross-linked by the oxalate moieties. The organic cations occupy the middle of the 8-membered one dimensional channels. Magnetic studies indicate weak antiferromagnetic interactions between the Mn2+ ions. (C) 2009 Elsevier Inc. All rights reserved.

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The main method of modifying properties of semiconductors is to introduce small amount of impurities inside the material. This is used to control magnetic and optical properties of materials and to realize p- and n-type semiconductors out of intrinsic material in order to manufacture fundamental components such as diodes. As diffusion can be described as random mixing of material due to thermal movement of atoms, it is essential to know the diffusion behavior of the impurities in order to manufacture working components. In modified radiotracer technique diffusion is studied using radioactive isotopes of elements as tracers. The technique is called modified as atoms are deployed inside the material by ion beam implantation. With ion implantation, a distinct distribution of impurities can be deployed inside the sample surface with good con- trol over the amount of implanted atoms. As electromagnetic radiation and other nuclear decay products emitted by radioactive materials can be easily detected, only very low amount of impurities can be used. This makes it possible to study diffusion in pure materials without essentially modifying the initial properties by doping. In this thesis a modified radiotracer technique is used to study the diffusion of beryllium in GaN, ZnO, SiGe and glassy carbon. GaN, ZnO and SiGe are of great interest to the semiconductor industry and beryllium as a small and possibly rapid dopant hasn t been studied previously using the technique. Glassy carbon has been added to demonstrate the feasibility of the technique. In addition, the diffusion of magnetic impurities, Mn and Co, has been studied in GaAs and ZnO (respectively) with spintronic applications in mind.