Magnetotransport of Dirac fermions on the surface of a topological insulator

We study the properties of Dirac fermions on the surface of a topological insulator in the presence of crossed electric and magnetic fields. We provide an exact solution to this problem and demonstrate that, in contrast to their counterparts in graphene, these Dirac fermions allow relative tuning of the orbital and Zeeman effects of an applied magnetic field by a crossed electric field along the surface. We also elaborate and extend our earlier results on normal-metal-magnetic film-normal metal (NMN) and normal-metal-barrier-magnetic film (NBM) junctions of topological insulators [S. Mondal, D. Sen, K. Sengupta, and R. Shankar, Phys. Rev. Lett. 104, 046403 (2010)]. For NMN junctions, we show that for Dirac fermions with Fermi velocity vF, the transport can be controlled using the exchange field J of a ferromagnetic film over a region of width d. The conductance of such a junction changes from oscillatory to a monotonically decreasing function of d beyond a critical J which leads to the possible realization of magnetic switches using these junctions. For NBM junctions with a potential barrier of width d and potential V-0, we find that beyond a critical J, the criteria of conductance maxima changes from chi=eV(0)d/h upsilon(F)=n pi to chi=(n+1/2)pi for integer n. Finally, we compute the subgap tunneling conductance of a normal-metal-magnetic film-superconductor junctions on the surface of a topological insulator and show that the position of the peaks of the zero-bias tunneling conductance can be tuned using the magnetization of the ferromagnetic film. We point out that these phenomena have no analogs in either conventional two-dimensional materials or Dirac electrons in graphene and suggest experiments to test our theory.

Corona Aging Studies on Silicone Rubber Nanocomposites

In EHV and UHV power transmission lines, corona could occur even on well designed transmission line hardware and insulators especially under wet conditions. Corona if allowed to occur continuously can significantly damage the polymeric insulators used in such lines in the long run. This paper presents the experimental results of corona aging studies conducted on unfilled silicone rubber as well as filled silicone rubber nanocomposites. Corona aging studies were conducted on silicone rubber samples with filler concentrations of 0, 1, 2 and 3 % by wt of nanosilica for 25 h and 50 h. Needle-plane electrode geometry has been used to create the corona on the samples. Different characterization techniques such as Scanning Electron Microscopy, Energy Dispersive X-ray analysis, Hydrophobicity, Fourier Transform Infrared Spectroscopy, and Optical Profilometry have been used to assess the relative performance of the samples with respect to corona aging. Results indicate that at 3 wt %, the performance of the nanocomposite is much better than the unfilled silicon rubber which can be attributed to the modifications in the material caused by the size factor of the filler.

Dominant role of the Cu---O charge-transfer energy, electronic polarizability and associated factors in the superconductivity of cuprates

Although it is believed that there is strong hybridization between the Cu(3d) and O(2p) orbitals in the layered cuprates and that the parent compounds such as La2CuO4 are charge-transfer gap insulators, very few models consider the Cu---O charge-transfer energy, Δ, or the hybridization strength, tpd, to be the important factors responsible for the superconductivity of these materials. Based on the crucial experimental observation that the relative intensity of the features in Cu(2p) photoemission of several families of cuprates varies systematically with the hole concentration, nh, we have been able to show that both these properties vary smoothly with Δ /tpd. More importantly, we show that the electronic polarizability of the CuO2 sheets, α , is sufficiently large to favour hole pairing and that the value α also depends on Δ/tpd. Both nh and α increase smoothly with decreasing Δ /tpd. Considering that the maximum Tc in the various cuprate families containing the same number of CuO2 sheets occurs around the same nh value (e.g., nh≈ 0.2 in cuprates with two CuO2 sheets). The present study demonstrates how Δ /tpd, α and such chemical bonding characteristics have an important bearing on the superconducting properties of the cuprates.

Radio interference measurements on a ceramic disc insulator string with field reduction electrode

This paper presents a laboratory study of the discharge radio noise generated by ceramic insulator strings under normal conditions. In the course of study, a comparison on the performance of two types of insulator strings under two different conditions was studied namely (a) normal disc insulators in a string and (b) disc insulators integrated with a newly developed field reduction electrode fixed to the disc insulator at the pin junction. The results obtained during the study are discussed and presented.

Structure and superconducting properties of a new family of thallium cuprates, TlSr3−xLnxCu2O7

Cuprates of the formula TlSr3−xLnxCu2O7 (Ln=Pr, NdorY) derived from the hypothetical TlSr3Cu2O7 show superconductivity with Tcs up to 95 K when 0.5less, approximatex≤0.75, the x=1.0 compositions being insulators. Rietveld analysis of X-ray diffraction profiles has been carried out for two superconducting members of this family. The unit cell a-parameter, and hence the in-plane Cu-O distance, increases with increase in x. The Tc value decreases with increase in x or the in-plane Cu-O distance in all the series of cuprates. Superconductivity in the Tl1−yPbySr3−xNdxCu2O7 systems is found with the highest Tc of 95 K when y=0.2 and x=0.5. The in-plane Cu-O distances in all the cuprates studied fall in the range found in the Sr-class of cuprate superconductors.

Synthesis of Novel Oxide Pyrochlores, A2BB?O7 (A = La, Nd; BB? = Pb, Sn, Bi), by Alkali Melt Route

Oxide pyrochlores of the formula A2BB? O7 (A = La, Nd; BB? = Pb, Sn, Bi) have been synthesized by a low-temperature ambient-pressure route employing KOH melts. All the compositions, including La2Bi2O7 and its strontium-substituted derivatives, La2-xSrxBi2O7-?, are deeply colored insulators, confirming that a metallic ground state is not achieved for Pb(IV) and Bi(IV/V) oxides with the pyrochlore structure.

Mott insulator high T-c bipolaronic superconductor transition in cuprates - Discussion

All ‘undoped’ cuprates are antiferromagnetic Mott insulators. We argue that with doping they remain to be insulators including the ‘overdoped’ samples. Hence, there is no clear dividing line between non–metallic cuprates and high–temperature superconductors. Based on the generic Hamiltonian including the electron–phonon interaction and the direct Coulomb repulsion the ground state of doped cuprates is shown to be a charged 2e Bose liquid of small bipolarons. A theory of the normal state transport of copper oxides is developed. The temperature dependence of the resistivity and of the Hall effect agrees remarkably well with the experimental data in La2–xSrxCuO4 for the entire temperature regime including unusual ‘logarithmic’ low–temperature region. The violation of Kohler's rule in magnetoresistivity is explained. The resistive and thermodynamic superconducting transitions in a magnetic field are quantitatively described.

Tracking and erosion resistance of silicone rubber nanocomposites under positive and negative dc voltages

ASTM D2303 standard provides a method for evaluating the tracking and erosion resistance of polymeric insulators under ac voltages. In this paper, the above method has been extended for evaluating the performance of the insulators under dc stresses. Tests were conducted on polymeric silicone rubber (SR) insulators under positive and negative dc stresses. Micron sized Alumina trihydrate (uATH) and nano sized Alumina (nALU) were used as fillers in SR matrix to improve the resistance to tracking and erosion. Results suggest that SR composites perform better under negative dc than under positive dc voltages. Eroded mass and leakage current data support the above result. Samples with low concentration of nano alumina fillers performed on par with the samples with large loadings of uATH.

Tracking and Erosion of Silicone Rubber Nanocomposites under DC Voltages of both Polarities

In order to improve the tracking and erosion performance of outdoor polymeric silicone rubber (SR) insulators used in HV power transmission lines, micron sized inorganic fillers are usually added to the base SR matrix. In addition, insulators used in high voltage dc transmission lines are designed to have increased creepage distance to mitigate the tracking and erosion problems. ASTM D2303 standard gives a procedure for finding the tracking and erosion resistance of outdoor polymeric insulator weathershed material samples under laboratory conditions for ac voltages. In this paper, inclined plane (IP) tracking and erosion tests similar to ASTM D2303 were conducted under both positive and negative dc voltages for silicone rubber samples filled with micron and nano sized particles to understand the phenomena occurring during such tests. Micron sized Alumina Trihydrate (ATH) and nano sized alumina fillers were added to silicone rubber matrix to improve the resistance to tracking and erosion. The leakage current during the tests and the eroded mass at the end of the tests were monitored. Scanning Electron Microscopy (SEM) and Energy dispersive Xray (EDX) studies were conducted to understand the filler dispersion and the changes in surface morphology in both nanocomposite and microcomposite samples. The results suggest that nanocomposites performed better than microcomposites even for a small filler loading (4%) for both positive and negative dc stresses. It was also seen that the tracking and erosion performance of silicone rubber is better under negative dc as compared to positive dc voltage. EDX studies showed migration of different ions onto the surface of the sample during the IP test under positive dc which has led to an inferior performance as compared to the performance under negative dc.

Synchronous and asynchronous Mott transitions in topological insulator ribbons

We address how the nature of linearly dispersing edge states of two-dimensional (2D) topological insulators evolves with increasing electron-electron correlation engendered by a Hubbard-like on-site repulsion U in finite ribbons of two models of topological band insulators. Using an inhomogeneous cluster slave-rotor mean-field method developed here, we show that electronic correlations drive the topologically nontrivial phase into a Mott insulating phase via two different routes. In a synchronous transition, the entire ribbon attains a Mott insulating state at one critical U that depends weakly on the width of the ribbon. In the second, asynchronous route, Mott localization first occurs on the edge layers at a smaller critical value of electronic interaction, which then propagates into the bulk as U is further increased until all layers of the ribbon become Mott localized. We show that the kind of Mott transition that takes place is determined by certain properties of the linearly dispersing edge states which characterize the topological resilience to Mott localization.

Sharp raman anomalies and broken adiabaticity at a pressure induced transition from band to topological insulator in Sb2Se3

The nontrivial electronic topology of a topological insulator is thus far known to display signatures in a robust metallic state at the surface. Here, we establish vibrational anomalies in Raman spectra of the bulk that signify changes in electronic topology: an E-g(2) phonon softens unusually and its linewidth exhibits an asymmetric peak at the pressure induced electronic topological transition (ETT) in Sb2Se3 crystal. Our first-principles calculations confirm the electronic transition from band to topological insulating state with reversal of parity of electronic bands passing through a metallic state at the ETT, but do not capture the phonon anomalies which involve breakdown of adiabatic approximation due to strongly coupled dynamics of phonons and electrons. Treating this within a four-band model of topological insulators, we elucidate how nonadiabatic renormalization of phonons constitutes readily measurable bulk signatures of an ETT, which will facilitate efforts to develop topological insulators by modifying a band insulator. DOI: 10.1103/PhysRevLett.110.107401

Simulation of potential and electric field across faulty ceramic disc insulator string

Ceramic/Porcelain insulators are widely used in power transmission lines to provide mechanical support for High voltage conductors in addition to withstand electrical stresses. As a result of lightning, switching or temporary over voltages that could initiate flashover under worst weather conditions, and to operate within interference limits. Given that the useful life in service of the individual insulator elements making up the insulator strings is hard to predict, they must be verified periodically to ensure that adequate line reliability is maintained at all times. Over the years utilities have adopted few methods to detect defective discs in a string, subsequently replacement of the faulty discs are being carried out for smooth operation. But, if the insulator is found to be defective in a string at some location that may not create any changes in the field configuration, there is no need to replace to avoid manpower and cost of replacement. Due to deficiency of electric field data for the existing string configuration, utilities are forced to replace the discs which may not be essentially required. Hence, effort is made in the present work to simulate the potential and electric field along the normal and with faults induced discs in a string up to 765 kV system voltages using Surface Charge Simulation Method (SCSM). A comparison is made between simulated results, experimental and field data and it was found that the computed results are quite acceptable and useful.

Performance analysis of 1200 kV ceramic disc insulator string under normal and faulted conditions

In the recent years there has been a considerable increase in demand for the electrical power requirement in our country. Presently the transmission system voltages has increased to 765 kV ac and 800kV dc, keeping in view of the future demand experimentation and simulation studies for 1200 kV ac and 1100kV dc transmission are under progress. In the present study an attempt is made to compute the surface potential, electric field across the string of ceramic disc insulators used for 1200kV ac systems. The studies are carried out under normal, polluted conditions and for the case of insulator string containing faulty discs. A computer code using surface charge simulation method (SCSM) is developed for the present analysis. Also a new technique which enhances the surface potential and electric field strength for the existing ceramic disc insulators is presented.

Tailoring of Electronic Structure and Thermoelectric Properties of a Topological Crystalline Insulator by Chemical Doping

Topological crystalline insulators (TCIs) are a new quantum state of matter in which linearly dispersed metallic surface states are protected by crystal mirror symmetry. Owing to its vanishingly small bulk band gap, a TCI like Pb0.6Sn0.4Te has poor thermoelectric properties. Breaking of crystal symmetry can widen the band gap of TCI. While breaking of mirror symmetry in a TCI has been mostly explored by various physical perturbation techniques, chemical doping, which may also alter the electronic structure of TCI by perturbing the local mirror symmetry, has not yet been explored. Herein, we demonstrate that Na doping in Pb0.6Sn0.4Te locally breaks the crystal symmetry and opens up a bulk electronic band gap, which is confirmed by direct electronic absorption spectroscopy and electronic structure calculations. Na doping in Pb0.6Sn0.4Te increases p-type carrier concentration and suppresses the bipolar conduction (by widening the band gap), which collectively gives rise to a promising zT of 1 at 856 K for Pb0.58Sn0.40Na0.02Te. Breaking of crystal symmetry by chemical doping widens the bulk band gap in TCI, which uncovers a route to improve TCI for thermoelectric applications.

Pressure-induced phase transition in Bi2Se3 at 3 GPa: electronic topological transition or not?

In recent years, a low pressure transition around P similar to 3 GPa exhibited by the A(2)B(3)-type 3D topological insulators is attributed to an electronic topological transition (ETT) for which there is no direct evidence either from theory or experiments. We address this phase transition and other transitions at higher pressure in bismuth selenide (Bi2Se3) using Raman spectroscopy at pressure up to 26.2 GPa. We see clear Raman signatures of an isostructural phase transition at P similar to 2.4 GPa followed by structural transitions at similar to 10 GPa and 16 GPa. First-principles calculations reveal anomalously sharp changes in the structural parameters like the internal angle of the rhombohedral unit cell with a minimum in the c/a ratio near P similar to 3 GPa. While our calculations reveal the associated anomalies in vibrational frequencies and electronic bandgap, the calculated Z(2) invariant and Dirac conical surface electronic structure remain unchanged, showing that there is no change in the electronic topology at the lowest pressure transition.