996 resultados para Hole Transport


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A generalized scattering matrix formalism is constructed to elucidate the interplay of electron resonance, coherence, dephasing, inelastic scattering, and heterogeneity, which play important roles in the physics of long-range electron transfer/transport. The theory consists of an extension of the standard Buttiker phase-breaking model and an analytical expression of the electron transmission coefficient for donor-bridge-acceptor systems with arbitrary length and sequence. The theory incorporates the following features: Dephasing-assisted off-resonance enhancement, inelasticity-induced turnover, resonance enhancement and its dephasing-induced suppression, dephasing-induced smooth superexchange-hopping transition, and heterogeneity effects. (C) 2002 American Institute of Physics.

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Electron transport through a double-quantum-dot structure with intradot and interdot Coulomb interactions is studied by a Green's function (GF) approach. The conductance is calculated by a Landauer-Buttiker formula for the interacting systems derived using the nonequilibrium Keldysh formalism and the GF's are solved by the equation-of-motion method. It is shown that the interdot-coupling dependence of the conductance peak splitting matches the recent experimental observations. Also, the breaking of the electron-hole symmetry is numerically demonstrated by the presence of the interdot repulsion. [S0163-1829(99)01640-9].

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We report highly efficient and stable organic light-emitting diodes (OLEDs) with MoO3-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA) as hole injection layer (HIL). A green OLED with structure of ITO/20 wt% MoO3: PTCDA/NPB/Alq(3)/LiF/Al shows a long lifetime of 1012 h at the initial luminance of 2000 cd/m(2), which is 1.3 times more stable than that of the device with MoO3 as HIL. The current efficiency of 4.7 cd/A and power efficiency of 3.7 lm/W at about 100 cd/m(2) have been obtained. The charge transfer complex between PTCDA and MoO3 plays a decisive role in improving the performance of OLEDs.

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An amorphous photoluminescent material based on a dithienylbenzothiadiazole structure has been used for the fabrication of organic red-light-emitting diodes. The synergistic effects of the electron-transport ability and exciton confinement of the emitting material allow for the fabrication of efficient pure-red-light-emitting devices without a hole blocker.

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Quantum-chemistry methods were explored to investigate the electronic structures, injection and transport properties, absorption and phosphorescence mechanism of a series of blue-emitting Ir(III) complexes {[(F-2-ppy)(2)Ir(pta -X/pyN4)], where F-2-ppy = (2,4-difluoro)phenylpyridine; pta = pyridine-1,2,4-triazole; X = phenyl(1); p-tolyl (2); 2,6-difluororophenyl (3); -CF3 (4), and pyN4 = pyridine-1,2,4-tetrazolate (5)}, which are used as emitters in organic light-emitting diodes (OLEDs). The mobility of hole and electron were studied computationally based on the Marcus theory. Calculations of Ionization potentials (IPs) and electron affinities (EAs) were used to evaluate the injection abilities of holes and electrons into these complexes.

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By introducing tungsten oxide (WO3) doped N,N-'-di(naphthalen-1-yl)-N,N-'-diphenyl-benzidine (NPB) hole injection layer, the great improvement in device efficiency and the organic film morphology stability at high temperature were realized for organic light-emitting diodes (OLEDs). The detailed investigations on the improvement mechanism by optical, electric, and film morphology properties were presented. The experimental results clearly demonstrated that using WO3 doped NPB as the hole injection layer in OLEDs not only reduced the hole injection barrier and enhanced the transport property, leading to low operational voltage and high efficiency, but also improved organic film morphology stability, which should be related to the device stability. It could be seen that due to the utilization of WO3 doped NPB hole injection layer in NPB/tris (8-quinolinolato) aluminum (Alq(3))-based device, the maximum efficiency reached 6.1 cd A(-1) and 4.8 lm W-1, which were much higher than 4.5 cd A(-1) and 1.1 lm W-1 of NPB/Alq(3) device without hole injection layer. The device with WO3 doped NPB hole injection layer yet gave high efficiency of 6.1 cd A(-1) (2.9 lm W-1) even though the device was fabricated at substrate temperature of 80 degrees C.

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We report a new route for the design of soluble phenylene vinylene (PV) based electroluminescent polymers bearing electron-deficient oxadizole (OXD) and triazole (TZ) moieties in the main chains with the aryloxy linkage. Both series of the PV-based polymers were prepared by Wittig reaction. By properly adjusting the OXD and/or TZ content through copolymerization, we can achieve an enhanced balance of hole- and electron injections, such that the device efficiency is significantly improved. Light-emitting diodes fabricated from P1, P2, P3, P4, P5, P6, and P7 with the configuration of Indium-Tin Oxide (ITO)/Poly (styrene sulfonic acid) doped poly (ethylenedioxythiophene) (PEDOT)/polymer/Ca/Al, emit bright green light with the maximum peak around 500 nm. For the device using the optimal polymer (P4) as emitting layer, a maximum brightness of 1300 cd/m(2) at 20 V and a maximum luminance efficiency of 0.325 cd/A can be obtained.

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Two kinds of carbazole-based molecules connected with diphenylamine and carbazole are synthesized by modified Ullmann reaction. Comparative study on their thermal stability, redox behavior, hole injection and transport properties are present. The results demonstrate that the carbazole-based molecules are very promising hole-transporting materials for electroluminescent devices.

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We have investigated the current-voltage and electroluminescent (EL) characteristics of single-layer organic devices based on poly(9-vinylcarbazole) (PVK) and tris(8-hydroxyquinoline)aluminium (Alq(3)) blend with different PVK : Alq(3) concentrations. The experimental results from the observed thickness and temperature dependence clearly demonstrate that the current at low voltage is due to the holes injected at the anode and is space-charge limited, whereas the current at the high voltage that steeply increases is explained as the electron tunnelling injection at the cathode. The hole mobility is directly determined by space-charge-limited current at the low voltage region and decreases with increasing Alq(3) content in the blend. The EL efficiency shows concentration dependence, which is attributed to the change of the transport of electrons and holes in the blend film.

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This thesis is focused on the application of numerical atomic basis sets in studies of the structural, electronic and transport properties of silicon nanowire structures from first-principles within the framework of Density Functional Theory. First we critically examine the applied methodology and then offer predictions regarding the transport properties and realisation of silicon nanowire devices. The performance of numerical atomic orbitals is benchmarked against calculations performed with plane waves basis sets. After establishing the convergence of total energy and electronic structure calculations with increasing basis size we have shown that their quality greatly improves with the optimisation of the contraction for a fixed basis size. The double zeta polarised basis offers a reasonable approximation to study structural and electronic properties and transferability exists between various nanowire structures. This is most important to reduce the computational cost. The impact of basis sets on transport properties in silicon nanowires with oxygen and dopant impurities have also been studied. It is found that whilst transmission features quantitatively converge with increasing contraction there is a weaker dependence on basis set for the mean free path; the double zeta polarised basis offers a good compromise whereas the single zeta basis set yields qualitatively reasonable results. Studying the transport properties of nanowire-based transistor setups with p+-n-p+ and p+-i-p+ doping profiles it is shown that charge self-consistency affects the I-V characteristics more significantly than the basis set choice. It is predicted that such ultrascaled (3 nm length) transistors would show degraded performance due to relatively high source-drain tunnelling currents. Finally, it is shown the hole mobility of Si nanowires nominally doped with boron decreases monotonically with decreasing width at fixed doping density and increasing dopant concentration. Significant mobility variations are identified which can explain experimental observations.

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Ion-acceleration processes have been studied in ultraintense laser plasma interactions for normal incidence irradiation of solid deuterated targets via neutron spectroscopy. The experimental neutron spectra strongly suggest that the ions are preferentially accelerated radially, rather than into the bulk of the material from three-dimensional Monte Carlo fitting of the neutron spectra. Although the laser system has a 10(-7) contrast ratio, a two-dimensional magnetic hydrodynamics simulation shows that the laser pedestal generates a 10 mum scale length in the coronal plasma with a 3 mum scale-length plasma near the critical density. Two-dimensional particle-in-cell simulations, incorporating this realistic density profile, indicate that the acceleration of the ions is caused by a collisionless shock formation. This has implications for modeling energy transport in solid is caused by a collisionless shock formation. This has implications for modeling energy transport in solid density plasmas as well as cone-focused fast ignition using the next generation PW lasers currently under construction.

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A detailed knowledge of the physical phenomena underlying the generation and the transport of fast electrons generated in high-intensity laser-matter interactions is of fundamental importance for the fast ignition scheme for inertial confinement fusion.

Here we report on an experiment carried out with the VULCAN Petawatt beam and aimed at investigating the role of collisional return currents in the dynamics of the fast electron beam. To that scope, in the experiment counter-propagating electron beams were generated by double-sided irradiation of layered target foils containing a Ti layer. The experimental results were obtained for different time delays between the two laser beams as well as for single-sided irradiation of the target foils. The main diagnostics consisted of two bent mica crystal spectrometers placed at either side of the target foil. High-resolution X-ray spectra of the Ti emission lines in the range from the Ly alpha to the K alpha line were recorded. In addition, 2D X-ray images with spectral resolution were obtained by means of a novel diagnostic technique, the energy-encoded pin-hole camera, based on the use of a pin-hole array equipped with a CCD detector working in single-photon regime. The spectroscopic measurements suggest a higher target temperature for well-aligned laser beams and a precise timing between the two beams. The experimental results are presented and compared to simulation results.

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Marine palynology and benthic and planktonic foraminiferal geochemistry are combined to reveal long- and short-term (Milankovitch-scale) paleoceanographic changes across the upper half of the Olduvai Subchron (ca. 1.86--1.77 Ma, lower Pleistocene) in DSDP Hole 603C from the lower New Jersey continental rise. Planktonic foraminiferal Mg/Ca ratios reveal annual sea-surface temperatures between 14.5° and 25°C, whereas modern values vary between 16° and 20°e. Despite evidence of downslope transport in much of the studied interval, dinoflagellate cyst and acritarch assemblages appear to reflect fluctuating temperate to subtropical water masses. These assemblages comprise both neritic and oceanic species, and are marked by a transition upsection from warm conditions, dominated by Lingulodinium machaerophorum, Polysphaeridium zoharyi and Cymatiosphaera? invaginata, to cooler conditions dominated by Filisphaera filifera. Combining dinoflagellate cyst proxies with planktonic foraminiferal geochemistry allows downslope transport events to be recognized during glacial episodes, and events dominated by intensified bottom-water circulation during interglacial episodes. Sixtytwo in-situ dinoflagellate cyst and acritarch taxa were recorded including several not previously described.

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The high variability of the intensity of suprathermal electron flux in the solar wind is usually ascribed to the high variability of sources on the Sun. Here we demonstrate that a substantial amount of the variability arises from peaks in stream interaction regions, where fast wind runs into slow wind and creates a pressure ridge at the interface. Superposed epoch analysis centered on stream interfaces in 26 interaction regions previously identified in Wind data reveal a twofold increase in 250 eV flux (integrated over pitch angle). Whether the peaks result from the compression there or are solar signatures of the coronal hole boundary, to which interfaces may map, is an open question. Suggestive of the latter, some cases show a displacement between the electron and magnetic field peaks at the interface. Since solar information is transmitted to 1 AU much more quickly by suprathermal electrons compared to convected plasma signatures, the displacement may imply a shift in the coronal hole boundary through transport of open magnetic flux via interchange reconnection. If so, however, the fact that displacements occur in both directions and that the electron and field peaks in the superposed epoch analysis are nearly coincident indicate that any systematic transport expected from differential solar rotation is overwhelmed by a random pattern, possibly owing to transport across a ragged coronal hole boundary.

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We investigate from first principles the electronic and transport properties of hybrid organic/silicon interfaces of relevance to molecular electronics. We focus on conjugated molecules bonded to hydrogenated Si through hydroxyl or thiol groups. The electronic structure of the systems is addressed within density functional theory, and the electron transport across the interface is directly evaluated within the Landauer approach. The microscopic effects of molecule-substrate bonding on the transport efficiency are explicitly analyzed, and the oxygen-bonded interface is identified as a candidate system when preferential hole transfer is needed.