908 resultados para Electrical and electronic engineering


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In this work Cu1.4Mn1.6O4 (CMO) spinel oxide is prepared and evaluated as a novel cobalt-free cathode for intermediate temperature solid oxide fuel cells (IT-SOFCs). Single phase CMO powder with cubic structure is identified using XRD. XPS results confirm that mixed Cu+/Cu2+ and Mn3+/Mn4+ couples exist in the CMO sample, and a maximum conductivity of 78 S cm−1 is achieved at 800 °C. Meanwhile, CMO oxide shows good thermal and chemical compatibility with a 10 mol% Sc2O3 stabilized ZrO2 (ScSZ) electrolyte material. Impedance spectroscopy measurements reveals that CMO exhibits a low polarization resistance of 0.143 Ω cm2 at 800 °C. Furthermore, a Ni-ScSZ/ScSZ/CMO single cell demonstrates a maximum power density of 1076 mW cm−2 at 800 °C under H2 (3% H2O) as the fuel and ambient air as the oxidant. These results indicate that Cu1.4Mn1.6O4 is a superior and promising cathode material for IT-SOFCs.

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Several high temperature superconductor (HTS) tapes have been developed since the late eighties. Due to the new techniques applied for their production, HTS tapes are becoming feasible and practical for many applications. In this work, we present the test results of five commercial HTS tapes from the BSCCO and YBCO families (short samples of 200 mm). We have measured and analyzed their intrinsic and extrinsic properties and compared their behaviors for fault current limiter (FCL) applications. Electrical measurements were performed to determine the critical current and the n value through the V-I relationship under DC and AC magnetic fields. The resistance per unit length was determined as a function of temperature. The magnetic characteristics were analyzed through susceptibility curves as a function of temperature. As transport current generates a magnetic field surrounding the HTS material, the magnetic measurements indicate the magnetic field supported by the tapes under a peak current 1.5 times higher than the critical current, I(c). By pulsed current tests the recovery time and the energy/volume during a current fault were also analyzed. These results are in agreement with the data found in the literature giving the most appropriate performance conductor for a FCL device (I(peak) = 4 kA) to be used in a 220 V-60 Hz grid.

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This paper describes the application of two relatively new diagnostic techniques for the determination of insulation condition in aged transformers. The techniques are (a) measurements of interfacial polarization spectra by a DC method and (b) measurements of molecular weight and its distribution by gel permeation chromatography. Several other electrical properties of the cellulose polymer were also investigated. Samples were obtained from a retired power transformer and they were analysed by the developed techniques. Six distribution transformers were also tested with the interfacial polarization spectra measurement technique, and the molecular weight of paper/pressboard samples from these transformers were also measured by the gel permeation chromatography. The variation of the results through different locations in a power transformer is discussed in this paper. The possible correlation between different measured properties was investigated and discussed in this paper.

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This paper describes the analysis of accelerated aged insulation samples to investigate the degradation processes observed in the insulation from aged transformers. Short term accelerated ageing experiments were performed on paper wrapped insulated conductors and on pressboard samples. The condition of aged insulation samples was investigated by two relatively new diagnostic techniques: (a) measurements of interfacial polarization spectra by a DC method (b) measurements of molecular weight and its distribution by gel permeation chromatography. Several other electrical properties of the paper/pressboard samples were also studied. Possible correlations have been investigated among the different measured properties. The GPC results have been used to predict how molecular weights change with temperature and time.

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ZnGa2O4 spinel is a promising new UV transparent electronic conductor. Enhancing the electrical conductivity of this potential oxide phosphor can make it a promising transparent conducting oxide. In this paper, we have investigated the effects of processing and doping on the conductivity of semiconducting ZnGa2O4, particularly thin films. Crystalline zinc gallate thin films have been deposited on fused quartz substrates employing the pulsed laser deposition (PLD) technique at room temperature for an oxygen partial pressure of 0.1 Pa (0.001mbar). The films were found to be UV transparent, the band gap of which shifted to 4.75eV on hydrogen annealing. The band gap of the oxygen stoichiometric bulk powder samples (4.55eV) determined from diffuse reflection spectrum (DRS) shifted to 4.81eV on reduction in a hydrogen atmosphere. The electrical conductivity improved when Sn was incorporated into the ZnGa2O4 spinel. The conductivity of ZnGa2O4:Sn thin films was further improved on reduction.

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Among organic materials, spirobifluorene derivatives represent a very attractive class of materials for electronic devices. These compounds have high melting points, glass transitions temperatures and morphological stability, which makes these materials suitable for organic electronic applications. In addition, some of spirobifluorenes can form porous supramolecular associations with significant volumes available for the inclusion of guests. These molecular associations based on the spirobifluorenes are noteworthy because they are purely molecular analogues of zeolites and other microporous solids, with potential applications in separation, catalysis, sensing and other areas.

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Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) quantum dot flash memories are fully CMOS compatible technology based on discrete isolated charge storage nodules which have the potential of pushing further the scalability of conventional NVMs. Quantum dot memories offer lower operating voltages as compared to conventional floating-gate (FG) Flash memories due to thinner tunnel dielectrics which allow higher tunneling probabilities. The isolated charge nodules suppress charge loss through lateral paths, thereby achieving a superior charge retention time. Despite the considerable amount of efforts devoted to the study of nanocrystal Flash memories, the charge storage mechanism remains obscure. Interfacial defects of the nanocrystals seem to play a role in charge storage in recent studies, although storage in the nanocrystal conduction band by quantum confinement has been reported earlier. In this work, a single transistor memory structure with threshold voltage shift, Vth, exceeding ~1.5 V corresponding to interface charge trapping in nc-Ge, operating at 0.96 MV/cm, is presented. The trapping effect is eliminated when nc-Ge is synthesized in forming gas thus excluding the possibility of quantum confinement and Coulomb blockade effects. Through discharging kinetics, the model of deep level trap charge storage is confirmed. The trap energy level is dependent on the matrix which confines the nc-Ge.

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We describe the optical and electrical characterization of a poly(p-phenylenevinylene) derivative: poly(2-dodecanoylsulfanyl-p-phenylenevinylene) (12COS-PPV). The electrical characterization was carried out on devices with the FTO\PEDOT:PSS\12COS-PPV/Al structure. Positive charge carrier mobility mu(h) of similar to 1.0 x 10(-6) cm(2) V(-1) s(-1) and barrier height phi of similar to 0.1 eV for positive charge carrier injection at the PEDOT:PSS/12COS-PPV interface were obtained using a thermionic injection model. FTO\PEDOT:P55\12COS-PPV/Ca devices exhibited green-yellow electroluminescence with maximum emission at lambda = 540 nm.

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This document will demonstrate the methodology used to create an energy and conductance based model for power electronic converters. The work is intended to be a replacement for voltage and current based models which have limited applicability to the network nodal equations. Using conductance-based modeling allows direct application of load differential equations to the bus admittance matrix (Y-bus) with a unified approach. When applied directly to the Y-bus, the system becomes much easier to simulate since the state variables do not need to be transformed. The proposed transformation applies to loads, sources, and energy storage systems and is useful for DC microgrids. Transformed state models of a complete microgrid are compared to experimental results and show the models accurately reflect the system dynamic behavior.

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Nos. [1]-240, 1882-91, form v. 1-13; nos. 241-310, 1892-Oct. 1897, have no volume numbers; nos. 311-336, Nov. 1897-1899, form v. 16, nos. 11-12, v. 17-18, no. 11.

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The complex design and development of a planar multilayer phased array antenna in microstrip technology can be simplified using two commercially available design tools 1) Ansoft Ensemble and 2) HP-EEsof Touchstone. In the approach presented here, Touchstone is used to design RF switches and phase shifters whose scattering parameters are incorporated in Ensemble simulations using its black box tool. Using this approach, Ensemble is able to fully analyze the performance of radiating and beamforming layers of a phased array prior to its manufacturing. This strategy is demonstrated in a design example of a 12-element linearly-polarized circular phased array operating at L band. A comparison between theoretical and experimental results of the array is demonstrated.

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The design and development of two X-band amplifying reflectarrays is presented. The arrays use dual-polarized aperture coupled patch antennas with FET transistors and phasing circuits to amplify a microwave signal and to radiate it in a chosen direction. Two cases are considered, one when a reflectarray converts a spherical wave due to a feed horn into a plane wave radiated into a boresight direction, and two, when the reflectarray converts a spherical wave due to a dual-polarized four-element feed array into a co-focal spherical wave. This amplified signal is received in an orthogonal port of the feed array so that the entire structure acts as a spatial power combiner. The two amplifying arrays are tested in the near-field zone for phase distribution over their apertures to achieve the required beam formation. Alternatively, their radiation patterns or gains are investigated.