β-glucanas de isolados fúngicos do gênero Botryosphaeria: produção, caracterização química e atividade anticoagulante

Pós-graduação em Ciências Biológicas (Microbiologia Aplicada) - IBRC

Turfa: interações com espécies metálicas e estudo de parâmetros que influenciam na utilização em setores agrícolas

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Microgeração de energia eletrica (abaixo de 100kw) utilizando turbina tesla modificada

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Análise da resposta dielétrica e varistora de compostos cerâmicos multifásicos à base de Ca2CU2Ti4-xSnxO12 (0,0 < x< 4,0)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Face and eye detection on hard datasets

[EN] This paper analyzes the detection and localization performance of the participating face and eye algorithms compared with the Viola Jones detector and four leading commercial face detectors. Performance is characterized under the different conditions and parameterized by per-image brightness and contrast. In localization accuracy for eyes, the groups/companies focusing on long-range face detection outperform leading commercial applications.

An Investigation into the Recovery of Indium from Fume Residue

Several months were required to produce a single gram of indium. Consequently, the industrial history of the metal is extremely short. In view of the unique properties that indium has demonstrated in this short period, it is probable that indium is still in its early stage of development. However, the commer­cial applications of the metal are well established and indium is now produced on a commercial scale. It is obtainable as the metal or in solution for electroplat­ing.

Higher order parametric excitation modes for spaceborne quadrupole mass spectrometers

This paper describes a technique to significantly improve upon the mass peak shape and mass resolution of spaceborne quadrupolemass spectrometers (QMSs) through higher order auxiliary excitation of the quadrupole field. Using a novel multiresonant tank circuit, additional frequency components can be used to drive modulating voltages on the quadrupole rods in a practical manner, suitable for both improved commercial applications and spaceflight instruments. Auxiliary excitation at frequencies near twice that of the fundamental quadrupole RF frequency provides the advantages of previously studied parametric excitation techniques, but with the added benefit of increased sensed excitation amplitude dynamic range and the ability to operate voltage scan lines through the center of upper stability islands. Using a field programmable gate array, the amplitudes and frequencies of all QMS signals are digitally generated and managed, providing a robust and stable voltage control system. These techniques are experimentally verified through an interface with a commercial Pfeiffer QMG422 quadrupole rod system. When operating through the center of a stability island formed from higher order auxiliary excitation, approximately 50% and 400% improvements in 1% mass resolution and peak stability were measured, respectively, when compared with traditional QMS operation. Although tested with a circular rod system, the presented techniques have the potential to improve the performance of both circular and hyperbolic rod geometry QMS sensors.

Effects of Strand Geometry on Selected Properties of Long-Stand Structural Composite Lumber Made from Northeastern Hardwoods

Structural composite lumber (SCL) products often possess significantly higher design values than the top grades of solid lumber, making it a popular choice for both residential and commercial applications. The enhanced mechanical properties of SCL are mainly due to defect randomization and densification of the wood fiber, both largely functions of the size, shape and composition (species) of the wood element. Traditionally, SCL manufacturers have used thin, rectangular elements produced from either moderate density softwoods or low density hardwoods. Higher density hardwood species have been avoided, as they require higher pressures to adequately densify and consolidate the wood furnish. These higher pressures can lead to increased manufacturing costs, damage to the wood fiber and/or a product that is too dense, making it heavy and unreceptive to common mechanical fastening techniques. In the northeastern United States high density, diffuse-porous hardwoods (such as maple, beech and birch) are abundant. Use of these species as primary furnish for a SCL product may allow for a competitive advantage in terms of resource cost against products that rely on veneer grade logs. Proximity to this abundant and relatively inexpensive resource may facilitate entry of SCL production facilities in the northeastern United States, where currently none exist. However, modifications to current strand sizes, geometries or production techniques will likely be required to allow for use of these species. A new SCL product concept has been invented allowing for use of these high density hardwoods. The product, referred to as long-strand structural composite lumber (LSSCL), uses strands of significantly larger cross sectional areas and volumes than existing SCL products. In spite of the large strand size, satisfactory consolidation is achieved without excessive densification of the wood fiber through use of a symmetrical strand geometric cross-section. LSSCL density is similar to that of existing SCL products, but is due mainly to the inherent density of the species, rather than through densification. An experiment was designed and conducted producing LSSCL from both large (7/16”) and small (1/4”) strands, of both square and triangular geometric cross sections. Testing results indicate that the large, triangular strands produce LSSCL beams with projected design values of: Modulus of elasticity (MOEapp) – 1,750,000 psi; Allowable bending stress (Fb) – 2750 psi; Allowable shear stress (Fv) – 260 psi. Several modifications are recommended which may lead to improvement of these values, likely allowing for competition against existing SCL products.

Caracterización química de efluentes de bodegas, Mendoza (Argentina)

La industria vitivinícola genera efluentes sólidos y líquidos en cantidad apreciable. Los sólidos son aprovechados en distintas aplicaciones e inclusive tienen valor comercial. En cambio, los líquidos pueden originar problemas cuando es necesario decidir cómo desecharlos o transformarlos en desechables. En Mendoza (Argentina), es común enviarlos después de su decantación a cauces y campos abiertos. En ambos casos aparece un serio riesgo de contaminación. Visto que generalmente se desconoce la composición de tales efluentes, este trabajo pretende caracterizarlos físico-químicamente en el período de elaboración de vinos, determinando: pH, conductividad eléctrica, DBO, DQO, cloruros, sulfatos, carbonatos y bicarbonatos, calcio, magnesio, sodio y potasio. La calidad de los efluentes varía notablemente con el agua empleada en los lavados, que aporta mayoritariamente aniones y cationes. Cuando el agua de lavado es abundante, los valores de pH, DBO y DQO de los efluentes permiten su eliminación junto con otros residuos cloacales o en campo abierto.

Contribution to active multi-beam reconfigurable antennas for L and S bands

La presente tesis doctoral con título "Contribution to Active Multi-Beam Reconfigurable Antennas for L and S Bands" ha sido desarrollada por el investigador ingeniero de telecomunicación estudiante de doctorado Javier García-Gasco Trujillo en el Grupo de Radiación del Departamento de Señales, Sistemas y Radiocomunicaciones de la ETSI de Telecomunicación de la Universidad Politécnica de Madrid bajo la dirección de los doctores Manuel Sierra Pérez y José Manuel Fernández González. Durante décadas, el desarrollo de antenas de apuntamiento electrónico ha estado limitado al área militar. Su alto coste y su gran complejidad eran los mayores obstáculos que frenaban la introducción de esta tecnología en aplicaciones comerciales de gran escala. La reciente aparición de componentes de estado sólido prácticos, fiables, y de bajo coste ha roto la barrera del coste y ha reducido la complejidad, haciendo que las antenas reconfigurables de apuntamiento electrónico sean una opción viable en un futuro cercano. De esta manera, las antenas phased array podrían llegar a ser la joya de la corona que permitan alcanzar los futuros retos presentes en los sistemas de comunicaciones tanto civiles como militares. Así pues, ahora es el momento de investigar en el desarrollo de antenas de apuntamiento electrónico de bajo coste, donde los nuevos componentes de estado sólido comerciales forman el núcleo duro de la arquitectura. De esta forma, el estudio e implementación de estos arrays de antenas activas de apuntamiento electrónico capaces de controlar la fase y amplitud de las distintas señales implicadas es uno de los grandes retos de nuestro tiempo. Esta tesis se enfrenta a este desafío, proponiendo novedosas redes de apuntamiento electrónico e innovadores módulos de transmisión/recepción (T/R) utilizando componentes de estado sólido de bajo coste, que podrán integrar asequibles antenas activas reconfigurables multihaz en bandas L y S. En la primera parte de la tesis se realiza una descripción del estado del arte de las antenas phased array, incluyendo su base teórica y sus ventajas competitivas. Debido a que las contribuciones obtenidas en la presente tesis han sido realizadas dentro de distintos proyectos de investigación, donde se han manejada antenas de simple/doble polarización circular y simple/doble banda de trabajo, se describen detenidamente los dos proyectos más relevantes de la investigación: el radar de basura espacial de la Agencia Espacial Europea (ESA), Space Situational Awareness (SSA); y la estación base de seguimiento y control de satélites de órbita baja, GEOdesic Dome Array (GEODA). Sin lugar a dudas, los dispositivos desfasadores son uno de los componentes clave en el diseño de antenas phased arrays. Recientemente se ha observado una gran variación en el precio final de estos dispositivos, llegando en ocasiones a límites inasequibles. Así pues, se han propuesto distintas técnicas de conformación de haz alternativas a la utilización de componentes desfasadores comerciales: el desfasador de líneas conmutadas, la red de haz conmutado, y una novedosa red desfasadora divisora/combinadora de potencia. Para mostrar un uso práctico de las mismas, se ha propuesto el uso de las tres alternativas para el caso práctico del subarray de cinco elementos de la celda GEODA-SARAS. Tras dicho estudio se obtiene que la novedosa red desfasadora divisora/combinadora de potencia propuesta es la que mejor relación comportamiento/coste presenta. Para verificar su correcto funcionamiento se construye y mide los dos bloques principales de los que está compuesta la red total, comprobando que en efecto la red responde según lo esperado. La estructura más simple que permite realizar un barrido plano es el array triangular de tres elementos. Se ha realizado el diseño de una nueva red multihaz que es capaz de proporcionar tres haces ortogonales en un ángulo de elevación _0 y un haz adicional en la dirección broadside utilizando el mencionado array triangular de tres elementos como antena. En primer lugar se realizar una breve introducción al estado del arte de las redes clásicas multihaz. Así mismo se comentan innovadores diseños de redes multihaz sin pérdidas. El estudio da paso a las redes disipativas, de tal forma que se analiza su base matemática y se muestran distintas aplicaciones en arrays triangulares de tres elementos. Finalmente, la novedosa red básica propuesta se presenta, mostrando simulaciones y medidas de la misma para el caso prácticoo de GEODA. También se ha diseñado, construido y medido una red compuesta por dos redes básicas complementarias capaz de proporcionar seis haces cuasi-ortogonales en una dirección _0 con dos haces superpuestos en broadside. La red propuesta queda totalmente validada con la fabricación y medida de estos con prototipos. Las cadenas de RF de los módulos T/R de la nueva antena GEODA-SARAS no son algo trivial. Con el fin de mostrar el desarrollo de una cadena compleja con una gran densidad de componentes de estado sólido, se presenta una descripción detallada de los distintos componentes que integran las cadenas de RF tanto en transmisión como en recepción de la nueva antena GEODA-SARAS. Tras presentar las especificaciones de la antena GEODA-SARA y su diagrama de bloques esquemático se describen los dos bloques principales de las cadenas de RF: la celda de cinco elementos, y el módulo de conversión de panel. De la misma manera también se presentará el módulo de calibración integrado dentro de los dos bloques principales. Para comprobar que el funcionamiento esperado de la placa es el adecuado, se realizará un análisis que tratará entre otros datos: la potencia máxima en la entrada del transmisor (comprobando la saturación de la cadena), señal de recepción mínima y máxima (verificando el rango de sensibilidad requerido), y el factor G/T (cumpliendo la especificación necesaria). Así mismo se mostrará un breve estudio del efecto de la cuantificación de la fase en el conformado de haz de RF. Los estudios muestran que la composición de las cadenas de RF permite el cumplimiento de las especificaciones necesarias. Finalmente la tesis muestra las conclusiones globales del trabajo realizado y las líneas futuras a seguir para continuar con esta línea de investigación. ABSTRACT This PhD thesis named "Contribution to Active Multi-Beam Reconfigurable Antennas for L and S Bands", has been written by the Electrical Engineer MSc. researcher Javier García-Gasco Trujillo in the Grupo de Radiación of the Departamento de Señales, Sistemas y Radiocomunicaciones from the ETSI de Telecomunicación of the Universidad Politécnica de Madrid. For decades, the implementation of electronically steerable phased array antennas was confined to the military area. Their high cost and complexity were the major obstacles to introduce this technology in large scale commercial applications. The recent emergence of new practical, low-cost, and highly reliable solid state devices; breaks the barrier of cost and reduces the complexity, making active phased arrays a viable future option. Thus, phased array antennas could be the crown jewel that allow to meet the future challenges in military and civilian communication systems. Now is time to deploy low-cost phased array antennas, where newly commercial components form the core of the architecture. Therefore, the study and implementation of these novel low-cost and highly efficient solid state phased array blocks capable of controlling signal phase/amplitude accurately is one of the great challenges of our time. This thesis faces this challenge, proposing innovative electronic beam steering networks and transmitter/ receiver (T/R) modules using affordable solid state components, which could integrate fair reconfigurable phased array antennas working in L and S bands. In the first part of the thesis, a description of the state of art of phased array antennas, including their fundamentals and their competitive advantages, is presented. Since thesis contributions have been carried out for different research projects, where antennas with single/double circular polarization and single/double working frequency bands have been examined, frameworks of the two more important projects are detailed: the Space Situational Awareness (SSA) programme from the European Space Agency (ESA), and the GEOdesic Dome Array (GEODA) project from ISDEFE-INSA and the ESA. Undoubtedly, phase shifter devices are one of the key components of phased array antennas. Recent years have witnessed wide fluctuations in commercial phase shifter prices, which sometimes led to unaffordable limit. Several RF steering technique alternatives to the commercial phase shifters are proposed, summarized, and compared: the switched line phase shifter, the switched-beam network, and the novel phase shifter power splitter/combiner network. In order to show a practical use of the three different techniques, the five element GEODA-SARAS subarray is proposed as a real case of study. Finally, a practical study of a newly phase shifter power splitter/combiner network for a subarray of five radiating elements with triangular distribution is shown. Measurements of the two different phase shifter power splitter/combiner prototypes integrating the whole network are also depicted, demonstrating their proper performance. A triangular cell of three radiating elements is the simplest way to obtain a planar scanner. A new multibeam network configuration that provides three orthogonal beams in a desired _0 elevation angle and an extra one in the broadside steering direction for a triangular array of three radiating elements is introduced. Firstly, a short introduction to the state of art of classical multi-beam networks is presented. Lossless network analysis, including original lossless network designs, are also commented. General dissipative network theory as well as applications for array antennas of three radiating elements are depicted. The proposed final basic multi-beam network are simulated, built and measured to the GEODA cell practical case. A combined network that provides six orthogonal beams in a desired _0 elevation angle and a double seventh one in the broadside direction by using two complementary proposed basic networks will be shown. Measurements of the whole system will be also depicted, verifying the expected behavior. GEODA-SARAS T/R module RF chains are not a trivial design. A thorough description of all the components compounding GEODA-SARAS T/R module RF chains is presented. After presenting the general specifications of the GEODA-SARAS antenna and its block diagrams; two main blocks of the RF chains, the five element cell and the panel conversion module, are depicted and analyzed. Calibration module integrated within the two main blocks are also depicted. Signal flow throw the system analyzing critical situations such as maximum transmitted power (testing the chain unsaturation), minimum and maximum receiving signal (verifying sensitivity range), maximum receiver interference signals (assuring a proper reception), and G/T factor (fulfilling the technical specification) are evaluated. Phase quantization error effects are also listed. Finally, the manuscript contains the conclusions drawn of the present research and the future work.

Fuel Cells: A Real Option for Unmanned Aerial Vehicles Propulsion

The possibility of implementing fuel cell technology in Unmanned Aerial Vehicle (UAV) propulsion systems is considered. Potential advantages of the Proton Exchange Membrane or Polymer Electrolyte Membrane (PEMFC) and Direct Methanol Fuel Cells (DMFC), their fuels (hydrogen and methanol), and their storage systems are revised from technical and environmental standpoints. Some operating commercial applications are described. Main constraints for these kinds of fuel cells are analyzed in order to elucidate the viability of future developments. Since the low power density is the main problem of fuel cells, hybridization with electric batteries, necessary in most cases, is also explored.

Technology and characterization of GaN-HEMTs devices: high temperature and trapping effects

Los transistores de alta movilidad electrónica basados en GaN han sido objeto de una extensa investigación ya que tanto el GaN como sus aleaciones presentan unas excelentes propiedades eléctricas (alta movilidad, elevada concentración de portadores y campo eléctrico crítico alto). Aunque recientemente se han incluido en algunas aplicaciones comerciales, su expansión en el mercado está condicionada a la mejora de varios asuntos relacionados con su rendimiento y habilidad. Durante esta tesis se han abordado algunos de estos aspectos relevantes; por ejemplo, la fabricación de enhancement mode HEMTs, su funcionamiento a alta temperatura, el auto calentamiento y el atrapamiento de carga. Los HEMTs normalmente apagado o enhancement mode han atraído la atención de la comunidad científica dedicada al desarrollo de circuitos amplificadores y conmutadores de potencia, ya que su utilización disminuiría significativamente el consumo de potencia; además de requerir solamente una tensión de alimentación negativa, y reducir la complejidad del circuito y su coste. Durante esta tesis se han evaluado varias técnicas utilizadas para la fabricación de estos dispositivos: el ataque húmedo para conseguir el gate-recess en heterostructuras de InAl(Ga)N/GaN; y tratamientos basados en flúor (plasma CF4 e implantación de F) de la zona debajo de la puerta. Se han llevado a cabo ataques húmedos en heteroestructuras de InAl(Ga)N crecidas sobre sustratos de Si, SiC y zafiro. El ataque completo de la barrera se consiguió únicamente en las muestras con sustrato de Si. Por lo tanto, se puede deducir que la velocidad de ataque depende de la densidad de dislocaciones presentes en la estructura, ya que el Si presenta un peor ajuste del parámetro de red con el GaN. En relación a los tratamientos basados en flúor, se ha comprobado que es necesario realizar un recocido térmico después de la fabricación de la puerta para recuperar la heteroestructura de los daños causados durante dichos tratamientos. Además, el estudio de la evolución de la tensión umbral con el tiempo de recocido ha demostrado que en los HEMTs tratados con plasma ésta tiende a valores más negativos al aumentar el tiempo de recocido. Por el contrario, la tensión umbral de los HEMTs implantados se desplaza hacia valores más positivos, lo cual se atribuye a la introducción de iones de flúor a niveles más profundos de la heterostructura. Los transistores fabricados con plasma presentaron mejor funcionamiento en DC a temperatura ambiente que los implantados. Su estudio a alta temperatura ha revelado una reducción del funcionamiento de todos los dispositivos con la temperatura. Los valores iniciales de corriente de drenador y de transconductancia medidos a temperatura ambiente se recuperaron después del ciclo térmico, por lo que se deduce que dichos efectos térmicos son reversibles. Se han estudiado varios aspectos relacionados con el funcionamiento de los HEMTs a diferentes temperaturas. En primer lugar, se han evaluado las prestaciones de dispositivos de AlGaN/GaN sobre sustrato de Si con diferentes caps: GaN, in situ SiN e in situ SiN/GaN, desde 25 K hasta 550 K. Los transistores con in situ SiN presentaron los valores más altos de corriente drenador, transconductancia, y los valores más bajos de resistencia-ON, así como las mejores características en corte. Además, se ha confirmado que dichos dispositivos presentan gran robustez frente al estrés térmico. En segundo lugar, se ha estudiado el funcionamiento de transistores de InAlN/GaN con diferentes diseños y geometrías. Dichos dispositivos presentaron una reducción casi lineal de los parámetros en DC en el rango de temperaturas de 25°C hasta 225°C. Esto se debe principalmente a la dependencia térmica de la movilidad electrónica, y también a la reducción de la drift velocity con la temperatura. Además, los transistores con mayores longitudes de puerta mostraron una mayor reducción de su funcionamiento, lo cual se atribuye a que la drift velocity disminuye más considerablemente con la temperatura cuando el campo eléctrico es pequeño. De manera similar, al aumentar la distancia entre la puerta y el drenador, el funcionamiento del HEMT presentó una mayor reducción con la temperatura. Por lo tanto, se puede deducir que la degradación del funcionamiento de los HEMTs causada por el aumento de la temperatura depende tanto de la longitud de la puerta como de la distancia entre la puerta y el drenador. Por otra parte, la alta densidad de potencia generada en la región activa de estos transistores conlleva el auto calentamiento de los mismos por efecto Joule, lo cual puede degradar su funcionamiento y Habilidad. Durante esta tesis se ha desarrollado un simple método para la determinación de la temperatura del canal basado en medidas eléctricas. La aplicación de dicha técnica junto con la realización de simulaciones electrotérmicas han posibilitado el estudio de varios aspectos relacionados con el autocalentamiento. Por ejemplo, se han evaluado sus efectos en dispositivos sobre Si, SiC, y zafiro. Los transistores sobre SiC han mostrado menores efectos gracias a la mayor conductividad térmica del SiC, lo cual confirma el papel clave que desempeña el sustrato en el autocalentamiento. Se ha observado que la geometría del dispositivo tiene cierta influencia en dichos efectos, destacando que la distribución del calor generado en la zona del canal depende de la distancia entre la puerta y el drenador. Además, se ha demostrado que la temperatura ambiente tiene un considerable impacto en el autocalentamiento, lo que se atribuye principalmente a la dependencia térmica de la conductividad térmica de las capas y sustrato que forman la heterostructura. Por último, se han realizado numerosas medidas en pulsado para estudiar el atrapamiento de carga en HEMTs sobre sustratos de SiC con barreras de AlGaN y de InAlN. Los resultados obtenidos en los transistores con barrera de AlGaN han presentado una disminución de la corriente de drenador y de la transconductancia sin mostrar un cambio en la tensión umbral. Por lo tanto, se puede deducir que la posible localización de las trampas es la región de acceso entre la puerta y el drenador. Por el contrario, la reducción de la corriente de drenador observada en los dispositivos con barrera de InAlN llevaba asociado un cambio significativo en la tensión umbral, lo que implica la existencia de trampas situadas en la zona debajo de la puerta. Además, el significativo aumento del valor de la resistencia-ON y la degradación de la transconductancia revelan la presencia de trampas en la zona de acceso entre la puerta y el drenador. La evaluación de los efectos del atrapamiento de carga en dispositivos con diferentes geometrías ha demostrado que dichos efectos son menos notables en aquellos transistores con mayor longitud de puerta o mayor distancia entre puerta y drenador. Esta dependencia con la geometría se puede explicar considerando que la longitud y densidad de trampas de la puerta virtual son independientes de las dimensiones del dispositivo. Finalmente se puede deducir que para conseguir el diseño óptimo durante la fase de diseño no sólo hay que tener en cuenta la aplicación final sino también la influencia que tiene la geometría en los diferentes aspectos estudiados (funcionamiento a alta temperatura, autocalentamiento, y atrapamiento de carga). ABSTRACT GaN-based high electron mobility transistors have been under extensive research due to the excellent electrical properties of GaN and its related alloys (high carrier concentration, high mobility, and high critical electric field). Although these devices have been recently included in commercial applications, some performance and reliability issues need to be addressed for their expansion in the market. Some of these relevant aspects have been studied during this thesis; for instance, the fabrication of enhancement mode HEMTs, the device performance at high temperature, the self-heating and the charge trapping. Enhancement mode HEMTs have become more attractive mainly because their use leads to a significant reduction of the power consumption during the stand-by state. Moreover, they enable the fabrication of simpler power amplifier circuits and high-power switches because they allow the elimination of negativepolarity voltage supply, reducing significantly the circuit complexity and system cost. In this thesis, different techniques for the fabrication of these devices have been assessed: wet-etching for achieving the gate-recess in InAl(Ga)N/GaN devices and two different fluorine-based treatments (CF4 plasma and F implantation). Regarding the wet-etching, experiments have been carried out in InAl(Ga)N/GaN grown on different substrates: Si, sapphire, and SiC. The total recess of the barrier was achieved after 3 min of etching in devices grown on Si substrate. This suggests that the etch rate can critically depend on the dislocations present in the structure, since the Si exhibits the highest mismatch to GaN. Concerning the fluorine-based treatments, a post-gate thermal annealing was required to recover the damages caused to the structure during the fluorine-treatments. The study of the threshold voltage as a function of this annealing time has revealed that in the case of the plasma-treated devices it become more negative with the time increase. On the contrary, the threshold voltage of implanted HEMTs showed a positive shift when the annealing time was increased, which is attributed to the deep F implantation profile. Plasma-treated HEMTs have exhibited better DC performance at room temperature than the implanted devices. Their study at high temperature has revealed that their performance decreases with temperature. The initial performance measured at room temperature was recovered after the thermal cycle regardless of the fluorine treatment; therefore, the thermal effects were reversible. Thermal issues related to the device performance at different temperature have been addressed. Firstly, AlGaN/GaN HEMTs grown on Si substrate with different cap layers: GaN, in situ SiN, or in situ SiN/GaN, have been assessed from 25 K to 550 K. In situ SiN cap layer has been demonstrated to improve the device performance since HEMTs with this cap layer have exhibited the highest drain current and transconductance values, the lowest on-resistance, as well as the best off-state characteristics. Moreover, the evaluation of thermal stress impact on the device performance has confirmed the robustness of devices with in situ cap. Secondly, the high temperature performance of InAlN/GaN HEMTs with different layouts and geometries have been assessed. The devices under study have exhibited an almost linear reduction of the main DC parameters operating in a temperature range from room temperature to 225°C. This was mainly due to the thermal dependence of the electron mobility, and secondly to the drift velocity decrease with temperature. Moreover, HEMTs with large gate length values have exhibited a great reduction of the device performance. This was attributed to the greater decrease of the drift velocity for low electric fields. Similarly, the increase of the gate-to-drain distance led to a greater reduction of drain current and transconductance values. Therefore, this thermal performance degradation has been found to be dependent on both the gate length and the gate-to-drain distance. It was observed that the very high power density in the active region of these transistors leads to Joule self-heating, resulting in an increase of the device temperature, which can degrade the device performance and reliability. A simple electrical method have been developed during this work to determine the channel temperature. Furthermore, the application of this technique together with the performance of electro-thermal simulations have enabled the evaluation of different aspects related to the self-heating. For instance, the influence of the substrate have been confirmed by the study of devices grown on Si, SiC, and Sapphire. HEMTs grown on SiC substrate have been confirmed to exhibit the lowest self-heating effects thanks to its highest thermal conductivity. In addition to this, the distribution of the generated heat in the channel has been demonstrated to be dependent on the gate-to-drain distance. Besides the substrate and the geometry of the device, the ambient temperature has also been found to be relevant for the self-heating effects, mainly due to the temperature-dependent thermal conductivity of the layers and the substrate. Trapping effects have been evaluated by means of pulsed measurements in AlGaN and InAIN barrier devices. AlGaN barrier HEMTs have exhibited a de crease in drain current and transconductance without measurable threshold voltage change, suggesting the location of the traps in the gate-to-drain access region. On the contrary, InAIN barrier devices have showed a drain current associated with a positive shift of threshold voltage, which indicated that the traps were possibly located under the gate region. Moreover, a significant increase of the ON-resistance as well as a transconductance reduction were observed, revealing the presence of traps on the gate-drain access region. On the other hand, the assessment of devices with different geometries have demonstrated that the trapping effects are more noticeable in devices with either short gate length or the gate-to-drain distance. This can be attributed to the fact that the length and the trap density of the virtual gate are independent on the device geometry. Finally, it can be deduced that besides the final application requirements, the influence of the device geometry on the performance at high temperature, on the self-heating, as well as on the trapping effects need to be taken into account during the device design stage to achieve the optimal layout.

Characterization and electrochemical properties of conducting nanocomposites synthesized from p-anisidine and aniline with titanium carbide by chemical oxidative method

A novel polymer/TiC nanocomposites “PPA/TiC, poly(PA-co-ANI)/TiC and PANI/TiC” was successfully synthesized by chemical oxidation polymerization at room temperature using p-anisidine and/or aniline monomers and titanium carbide (TiC) in the presence of hydrochloric acid as a dopant with ammonium persulfate as oxidant. These nanocomposites obtained were characterized by Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), and thermogravimetric analysis (TGA). XRD indicated the presence of interactions between polymers and TiC nanoparticle and the TGA revealed that the TiC nanoparticles improve the thermal stability of the polymers. The electrical conductivity of nanocomposites is in the range of 0.079–0.91 S cm−1. The electrochemical behavior of the polymers extracted from the nanocomposites has been analyzed by cyclic voltammetry. Good electrochemical response has been observed for polymer films; the observed redox processes indicate that the polymerisation on TiC nanoparticles produces electroactive polymers. These nanocomposite microspheres can potentially used in commercial applications as fillers for antistatic and anticorrosion coatings.

Character recognition systems using Fourier transformation in incoherent light

Many attempts have been made to overcome problems involved in character recognition which have resulted in the manufacture of character reading machines. An investigation into a new approach to character recognition is described. Features for recognition are Fourier coefficients. These are generated optically by convolving characters with periodic gratings. The development of hardware to enable automatic measurement of contrast and position of periodic shadows produced by the convolution is described. Fourier coefficients of character sets were measured, many of which are tabulated. Their analysis revealed that a few low frequency sampling points could be selected to recognise sets of numerals. Limited treatment is given to show the effect of type face variations on the values of coefficients which culminated in the location of six sampling frequencies used as features to recognise numerals in two type fonts. Finally, the construction of two character recognition machines is compared and contrasted. The first is a pilot plant based on a test bed optical Fourier analyser, while the second is a more streamlined machine d(3signed for high speed reading. Reasons to indicate that the latter machine would be the most suitable to adapt for industrial and commercial applications are discussed.

Resonant cavity Fibre Bragg grating sensor interrogation

This thesis presents a novel high-performance approach to time-division-multiplexing (TDM) fibre Bragg grating (FBG) optical sensors, known as the resonant cavity architecture. A background theory of FBG optical sensing includes several techniques for multiplexing sensors. The limitations of current wavelength-division-multiplexing (WDM) schemes are contrasted against the technological and commercial advantage of TDM. The author’s hypothesis that ‘it should be possible to achieve TDM FBG sensor interrogation using an electrically switched semiconductor optical amplifier (SOA)’ is then explained. Research and development of a commercially viable optical sensor interrogator based on the resonant cavity architecture forms the remainder of this thesis. A fully programmable SOA drive system allows interrogation of sensor arrays 10km long with a spatial resolution of 8cm and a variable gain system provides dynamic compensation for fluctuating system losses. Ratiometric filter- and diffractive-element spectrometer-based wavelength measurement systems are developed and analysed for different commercial applications. The ratiometric design provides a low-cost solution that has picometre resolution and low noise using 4% reflective sensors, but is less tolerant to variation in system loss. The spectrometer design is more expensive, but delivers exceptional performance with picometre resolution, low noise and tolerance to 13dB system loss variation. Finally, this thesis details the interrogator’s peripheral components, its compliance for operation in harsh industrial environments and several examples of commercial applications where it has been deployed. Applications include laboratory instruments, temperature monitoring systems for oil production, dynamic control for wind-energy and battery powered, self-contained sub-sea strain monitoring.