Ballistic Single-Electron Quputer

We propose a new solid state implementation of a quantum computer (quputer) using ballistic single electrons as flying qubits in 1D nanowires. We use a single electron pump (SEP) to prepare the initial state and a single electron transistor (SET) to measure the final state. Single qubit gates are implemented using quantum dots as phase shifters and electron waveguide couplers as beam splitters. A Coulomb coupler acts as a 2-qubit gate, using a mutual phase modulation effect. Since the electron phase coherence length in GaAs/AlGaAs heterostructures is of the order of 30$\mu$m, several gates (tens) can be implemented before the system decoheres.

The effect of shear strength on the ballistic response of laminated composite plates

The ballistic performance of clamped circular carbon fibre reinforced polymer (CFRP) and Ultra High Molecular Weight Polyethylene (UHMWPE) fibre composite plates of equal areal mass and 0/90 lay-up were measured and compared with that of monolithic 304 stainless steel plates. The effect of matrix shear strength upon the dynamic response was explored by testing: (i) CFRP plates with both a cured and uncured matrix and (ii) UHMWPE laminates with identical fibres but with two matrices of different shear strength. The response of these plates when subjected to mid-span, normal impact by a steel ball was measured via a dynamic high speed shadow moiré technique. Travelling hinges emanate from the impact location and travel towards the supports. The anisotropic nature of the composite plate results in the hinges travelling fastest along the fibre directions and this results in square-shaped moiré fringes in the 0/90 plates. Projectile penetration of the UHMWPE and the uncured CFRP plates occurs in a progressive manner, such that the number of failed plies increases with increasing velocity. The cured CFRP plate, of high matrix shear strength, fails by cone-crack formation at low velocities, and at higher velocities by a combination of cone-crack formation and communition of plies beneath the projectile. On an equal areal mass basis, the low shear strength UHMWPE plate has the highest ballistic limit followed by the high matrix shear strength UHMWPE plate, the uncured CFRP, the steel plate and finally the cured CFRP plate. We demonstrate that the high shear strength UHMWPE plate exhibits Cunniff-type ballistic limit scaling. However, the observed Cunniff velocity is significantly lower than that estimated from the laminate properties. The data presented here reveals that the Cunniff velocity is limited in its ability to characterise the ballistic performance of fibre composite plates as this velocity is independent of the shear properties of the composites: the ballistic limit of fibre composite plates increases with decreasing matrix shear strength for both CFRP and UHMWPE plates. © 2013 Elsevier Masson SAS. All rights reserved.

Multi-hit ballistic damage characterisation of 304 stainless steel plates with finite elements

Multi-impact of projectiles on thin 304 stainless steel plates is investigated to assess the degradation of ballistic performance, and to characterise the inherent mechanisms. Assessment of ballistic degradation is by means of a double-impact of rigid spheres at the same site on a circular clamped plate. The limiting velocity of the second impact, will be altered by the velocity of the antecedent impact. Finite element analyses were used to elucidate experimental results and understand the underlying mechanisms that give rise to the performance degradation. The effect of strength and ductility on the single and multi-impact performance was also considered. The model captured the experimental results with excellent agreement. Moreover, the material parameters used within the model were exclusively obtained from published works with no fitting or calibration required. An attempt is made to quantify the elevation of the ballistic limit of thin plates by the dynamic mechanism of travelling hinges. Key conclusions: The multi-hit performance scales linearly with the single-hit performance; and strength is a significantly greater effector of increased ballistic limit than ductility, even at the expense of toughness. © 2014 Elsevier Ltd.

Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs

Using self-consistent calculations of million-atom Schrodinger-Poisson equations, we investigate the I-V characteristics of tunnelling and ballistic transport of nanometer metal oxide semiconductor field effect transistors (MOSFET) based on a full 3-D quantum mechanical simulation under nonequilibtium condition. Atomistic empirical pseudopotentials are used to describe the device Hamiltonian and the underlying bulk band structure. We find that the ballistic transport dominates the I-V characteristics, whereas the effects of tunnelling cannot be neglected with the maximal value up to 0.8mA/mu m when the channel length of MOSFET scales down to 25 nm. The effects of tunnelling transport lower the threshold voltage V-t. The ballistic current based on fully 3-D quantum mechanical simulation is relatively large and has small on-off ratio compared with results derived from the calculation methods of Luo et al.

Compact voltage-mode multi-valued literal gate using nanoscale ballistic MOSFETs

A CMOS voltage-mode multi-valued literal gate is presented. The ballistic electron transport characteristic of nanoscale MOSFETs is smartly used to compactly achieve universal radix-4 literal operations. The proposed literal gates have small numbers of transistors and low power dissipations, which makes them promising for future nanoscale multi-valued circuits. The gates are simulated by HSPICE.

Ballistic electron transport in hybrid ferromagnet/two-dimensional electron gas sandwich nanostructure: Spin polarization and magnetoresistance effect

We have theoretically investigated ballistic electron transport through a combination of magnetic-electric barrier based on a vertical ferromagnet/two-dimensional electron gas/ferromagnet sandwich structure, which can be experimentally realized by depositing asymmetric metallic magnetic stripes both on top and bottom of modulation-doped semiconductor heterostructures. Our numerical results have confirmed the existence of finite spin polarization even though only antisymmetric stray field B-z is considered. By switching the relative magnetization of ferromagnetic layers, the device in discussion shows evident magnetoconductance. In particular, both spin polarization and magnetoconductance can be efficiently enhanced by proper electrostatic barrier up to the optimal value relying on the specific magnetic-electric modulation. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3041477]