996 resultados para BORON SILICATES


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Simple methods of preparing boron nitride nanotubes and nanowires have been investigated. The methods involve heating boric acid with activated carbon, multi-walled carbon nanotubes, catalytic iron particles or a mixture of activated carbon and iron particles, in the presence of NH3. While with activated carbon, boron nitride nanowires constitute the primary product, high yields of clean boron nitride nanotubes are obtained with multi-walled carbon nanotubes. Aligned boron nitride nanotubes are produced when aligned multi-walled carbon nanotubes are employed as the starting material suggesting the templating role of the nanotubes. Boron nitride nanotubes with different structures have been obtained by reacting boric acid with NH3 in the presence of a mixture of activated carbon and Fe particles. (C) 2002 Elsevier Science B.V. All rights reserved.

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In situ formations of Al2O3 + ZrO2 + SiCW ternary composite powders have been obtained by carbothermal reduction of a mixture of Sillimanite. Kaolin and Zircon using two different carbon sources. Products formed were mixtures of alumina and zirconia along with silicon carbide in the form of whiskers. The effects of composition of the reactants, the role of fineness of the starting precursors and the nature of the carbon Source on the final product powder obtained are presented. XRD and SEM analyses indicate complete reaction of the precursors to yield Al2O3 + ZrO2 + SiCW as product powders, with the SiC having whisker morphology. It is also seen that zirconia could be stabilised to some extent in the tetragonal form without any stabilising agent by tailoring the starting materials and their composition. (C) 2002 Published by Elsevier Science B.V.

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Hypoeutectic boron addition (0.1 wt.%) to Ti-6Al-4V is known to cause significant refinement of the cast microstructure. In the present investigation, it has been observed that trace boron addition to Ti-6Al-4V alloy also ensures excellent microstructural homogeneity throughout the ingot. A subdued thermal gradient, related to the basic grain refinement mechanism by constitutional undercooling, persists during solidification for the boron-containing alloy and maintains equivalent beta grain growth kinetics at different locations in the ingot. The Ti-6Al-4V alloy shows relatively strong texture with preferred components (e.g. ingot axis parallel to[0 0 0 1] or [1 0 (1) over bar 0]) over the entire ingot and gradual transition of texture components along the radius. For Ti-6Al-4V-0.1B alloy, significant weakening characterizes both the high-temperature beta and room-temperature a texture. In addition to solidification factors that are responsible for weak beta texture development, microstructural differences due to boron addition, e.g. the absence of grain boundary alpha phase and presence of TiB particles, strongly affects the mechanism of beta -> alpha phase transformation and consequently weakens the alpha phase texture. Based on the understanding developed for the boron-modified alloy, a novel mechanism has been proposed for the microstructure and texture formation during solidification and phase transformation. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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In the present study, the beta transus of boron-modified Ti-6Al-4V alloy was found to be almost equivalent to that of the normal alloy, although there is a difference in interstitial element content large enough to produce significant change. Compositional analysis confirms the scavenging ability of the boride particles that are present in the microstructure toward the interstitial elements. This factor can successfully retard the alpha -> beta phase transformation locally and increase the overall beta transus of boron-added material.

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Electrochemical oxidation of sodium borohydride (NaBH(4)) and ammonia borane (NH(3)BH(3)) (AB) have been studied on titanium carbide electrode. The oxidation is followed by using cyclic voltammetry, chronoamperometry and polarization measurements. A fuel cell with TiC as anode and 40 wt% Pt/C as cathode is constructed and the polarization behaviour is studied with NaBH(4) as anodic fuel and hydrogen peroxide as catholyte. A maximum power density of 65 mW cm(-2) at a load current density of 83 mA cm(-2) is obtained at 343 K in the case of borhydride-based fuel cell and a value of 85 mW cm(-2) at 105 mA cm(-2) is obtained in the case of AB-based fuel cell at 353 K. (C) 2011 Elsevier Ltd. All rights reserved.

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Addition of boron to cast Ti-6Al-4V alloy leads to significant refinement in grain size, which in turn improves processibilty as well as the mechanical properties of the as-cast alloy. Room temperature tensile and fatigue properties of Wrought Ti-6Al-4V-B alloys with B up to 0.09 wt.% are investigated. Thermo-mechanical processing at 950 degrees C caused kinking of alpha lamellae and alignment of TiB particles in the flow direction with a negligible change in prior beta grain and colony sizes, indicating the absence of dynamic recrystallisation during forging. Characterisation with the aid of X-ray and electron back scattered diffraction reveal a strong basal texture in B free alloy which gets randomised with the 0.09B addition in the forged condition. Marginal enhancement in tensile and fatigue properties upon forging is noted. B free wrought Ti-6Al-4V alloy exhibits better tensile strength as compared to B containing alloy, due to the operation of < c+a > slip on pyramidal planes with high value of CRSS as compared to < a > slip on basal and prismatic planes. Decrease in fatigue strength of Ti-6Al-4V-0.04B in as-cast and the wrought state is observed due to increase in the volume fraction of grain boundary a phase with B addition, which acts as a crack nucleation site. No significant effect of TiB particles on tensile and fatigue properties is observed. (C) 2012 Elsevier B.V. All rights reserved.

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Boron addition to conventional titanium alloys below the eutectic limit refines the cast microstructure and improves mechanical properties. The present work explores the influence of hypoeutectic boron addition on the microstructure and texture evolution in Ti-6Al-4V alloy under beta extrusion. The beta extruded microstructure of Ti-6Al-4V is characterized by shear bands parallel to the extrusion direction. In contrast, the extruded Ti-6Al-4V-0.1B alloy shows a regular beta worked microstructure consisting of fine prior beta grains and acicular alpha-lamellae with no signs of the microstructural instability. Crystallographic texture after extrusion was almost identical for the two alloys indicating the similarity in their transformation behavior, which is attributed to complete dynamic recrystallization during beta processing. Microstructural features as well as crystallographic texture indicate dominant grain boundary related deformation processes for the boron modified alloy that leads to homogeneous deformation without instability formation. The absence of shear bands has significant technological importance as far as the secondary processing of boron added alloys in (alpha + beta)-phase field are concerned. (C) 2012 Elsevier B.V. All rights reserved.

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The effect of gas molecule adsorption is investigated on the density of states of (9,0) zigzag boron nitride nanotube within a random tight-binding Hamiltonian model. The Green function approach and coherent potential approximation have been implemented. The results show that the adsorption of carbon dioxide gas molecules by boron atoms only leads to a donor type semiconductor while the adsorption by nitrogen atoms only leads to an acceptor. Since the gas molecules are adsorbed by both boron and nitrogen atoms, a reduction of the band gap is found. In all cases, increasing the gas concentration causes an increase in the height of the peaks in the band gap. This is due to an increasing charge carrier concentration induced by adsorbed gas molecules.

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Procedures were developed for purification and processing of electrodeposited enriched boron powder for control rod application in India's first commercial Proto Type Fast Breeder Reactor (PFBR). Methodology for removal of anionic (F-, Cl-, BF4-) and cationic (Fe2+, Fe3+, Ni2+) impurities was developed. Parameters for grinding boron flakes obtained after electrodeposition were optimized to obtain the boron powder having particle size less than 100 gm. The rate of removal of impurities was studied with respect to time and concentration of the reagents used for purification. Process parameters for grinding and removal of impurities were optimized. A flowsheet was proposed which helps in minimizing the purification time and concentration of the reagent used for the effective removal of impurities. The purification methodology developed in this work could produce boron that meets the technical specifications for control rod application in a fast reactor.

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We investigate the gate-controlled direct band-to-band tunneling (BTBT) current in a graphene-boron nitride (G-BN) heterobilayer channel-based tunnel field effect transistor. We first study the imaginary band structure of hexagonal and Bernal-stacked heterobilayers by density functional theory, which is then used to evaluate the gate-controlled current under the Wentzel-Kramers-Brillouin approximation. It is shown that the direct BTBT is probable for a certain interlayer spacing of the G-BN which depends on the stacking orders.

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Three isomeric meso-SiMe3C6H4 substituted BODIPYs have been synthesized and their optical properties studied. The constitutional isomers show similar absorption properties but vastly different emissive properties as a result of their different conformational flexibility. Fluorine-19 NMR study is used to unravel the conformational state of the BODIPY isomers at a molecular level. (C) 2013 Elsevier B. V. All rights reserved.

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We study the performance of a hybrid Graphene-Boron Nitride armchair nanoribbon (a-GNR-BN) n-MOSFET at its ballistic transport limit. We consider three geometric configurations 3p, 3p + 1, and 3p + 2 of a-GNR-BN with BN atoms embedded on either side (2, 4, and 6 BN) on the GNR. Material properties like band gap, effective mass, and density of states of these H-passivated structures are evaluated using the Density Functional Theory. Using these material parameters, self-consistent Poisson-Schrodinger simulations are carried out under the Non Equilibrium Green's Function formalism to calculate the ballistic n-MOSFET device characteristics. For a hybrid nanoribbon of width similar to 5 nm, the simulated ON current is found to be in the range of 265 mu A-280 mu A with an ON/OFF ratio 7.1 x 10(6)-7.4 x 10(6) for a V-DD = 0.68 V corresponding to 10 nm technology node. We further study the impact of randomly distributed Stone Wales (SW) defects in these hybrid structures and only 2.5% degradation of ON current is observed for SW defect density of 3.18%. (C) 2014 AIP Publishing LLC.